P-Channel Power MOSFET
Reviewed by: Jon Lowy, consulting engineer
Description
A P-Channel Power MOSFET is a type of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) that uses holes as the primary charge carriers. Unlike its N-Channel counterpart, the P-Channel MOSFET requires a more negative gate voltage to turn on. This type of MOSFET is often used in applications where the source is connected to a higher voltage than the drain, making it suitable for high-side switching.
Working Principle
The operation of a P-Channel Power MOSFET involves the application of a negative voltage to the gate relative to the source. When this negative voltage exceeds the threshold voltage, it creates an electric field that allows holes to flow from the source to the drain, thereby turning the MOSFET on. When the gate voltage is removed, the channel closes, and the MOSFET turns off, resulting in high drain-source resistance. This mechanism is essentially the mirror image of the N-Channel MOSFET, where a positive gate voltage is required to turn the device on.
Applications
P-Channel Power MOSFETs are commonly used in various applications, including motor control, switching power supplies, and automotive systems. In motor control, they are often configured in half-bridge or full H-bridge configurations to manage the direction and speed of the motor. In switching power supplies, they are used for high-speed switching operations, ranging from tens of kHz to MHz. Their ruggedness and ability to withstand harsh conditions make them particularly suitable for automotive applications that demand high reliability and durability.
Advantages over other Power MOSFETs
One of the key advantages of P-Channel Power MOSFETs is their low conduction loss, which results in reduced power dissipation and improved efficiency. For instance, some P-Channel MOSFETs have a maximum on-state resistance as low as 4.2 O, which minimizes heat generation. Additionally, they offer excellent switching performance with low gate charge, allowing for fast and efficient operation. Their ability to withstand dynamic dv/dt and avalanche conditions further enhances their reliability in demanding environments.
Limitations
Despite their advantages, P-Channel Power MOSFETs have some limitations. They generally exhibit higher on-state resistance compared to N-Channel MOSFETs, which can result in higher power losses. Additionally, the requirement for a more negative gate voltage can complicate the design of the gate drive circuitry, especially in systems where only positive voltages are readily available.
Considerations
When selecting a P-Channel Power MOSFET for a specific application, several factors need to be considered. These include the maximum drain-source voltage, on-state resistance, gate charge, and thermal performance. It is also essential to consider the operating environment, as some applications may require MOSFETs with enhanced ruggedness and reliability. Proper thermal management is crucial to ensure that the device operates within its safe temperature range, thereby prolonging its lifespan and maintaining performance.
from Infineon Technologies AG
100V Quad P-Channel MOSFET in a MO-036AB package - A JANTX2N7335 with Hermetic Packaging. Benefits. Hermetically packaged power MOSFET. Packaged on a MIL-PRF-19500 manufacturing line. Similar Parts. IRFG9110. A IRFG9110 with Hermetic Packaging. JANTX2N7335. A JANTX2N7335 with Hermetic Packaging. [See More]
- Polarity: P-Channel; P
- Packing Method: Tray; TRAY
- Package Type: C-DIP-14
from Rochester Electronics
Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA [See More]
- Polarity: P-Channel
- Package Type: TO-204AA
- rDS(on): 0.3000
- Packing Method: Tray
from Texas Instruments
P-Channel NexFET? Power MOSFET 9-DSBGA -55 to 150 [See More]
- Polarity: P-Channel
- rDS(on): 0.0122
- V(BR)DSS: -8
- IDSS: -48000
from Win Source Electronics
Win Source Part Number: 1088923-RQ6G050ATTCR. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: P-Channel. Drain to Source Voltage (Vdss): 40 V. [See More]
- Polarity: P-Channel
- PD: 950
- QG: 22
- TJ: 150
from Infineon Technologies AG
Rad hard, -60V, -22A, single, P-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, COTS. Features. Single event effect (SEE) hardened. 5V CMOS and TTL Compatible. Fast switching. Low total gate charge. Simple drive requirements. Hermetically sealed. Ceramic package. Light weight. [See More]
- Polarity: P-Channel; P
- QG: 36
- V(BR)DSS: -60
- Package Type: C-CCN-3
from Rochester Electronics
Power Field-Effect Transistor, 16A, 60V, P-Channel, MOSFET [See More]
- Polarity: P-Channel
- Package Type: TO-220; TO-220-3
from Texas Instruments
CSD23202W10 12 V P-Channel NexFET(TM) Power MOSFET 4-DSBGA [See More]
- Polarity: P-Channel
- rDS(on): 0.0530
- V(BR)DSS: -12
- IDSS: -25000
from Win Source Electronics
Win Source Part Number: 1088944-RRS050P03HZGTB. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 2,500. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: P-Channel. Drain to... [See More]
- Polarity: P-Channel
- PD: 2000
- QG: 9.2
- TJ: 150
from Infineon Technologies AG
Rad hard, -60V, -22A, single, P-channel MOSFET, R7 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached. Features. Single event effect (SEE) hardened. 5V CMOS and TTL Compatible. Fast switching. Low total gate charge. Simple drive requirements. Hermetically sealed. Ceramic package. [See More]
- Polarity: P-Channel; P
- QG: 36
- V(BR)DSS: -60
- Package Type: C-CCN-3
from Rochester Electronics
Power Field-Effect Transistor, P-Channel MOSFET [See More]
- Polarity: P-Channel
- Package Type: DPAK-3
from Texas Instruments
CSD23203W 8 V P-Channel NexFET? Power MOSFET 6-DSBGA [See More]
- Polarity: P-Channel
- rDS(on): 0.0194
- V(BR)DSS: -8
- IDSS: -54000
from Win Source Electronics
Win Source Part Number: 1088946-RRS100P03HZGTB. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 2,500. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: P-Channel. Drain to... [See More]
- Polarity: P-Channel
- PD: 2000
- QG: 39
- TJ: 150
from Infineon Technologies AG
Rad hard, -60V, -0.53A, single, P-channel MOSFET, R7 in a UB package - UB, 300 krad(Si) TID, COTS. Features. Single event effect (SEE) hardened. 5V CMOS and TTL compatible. Fast switching. Low total gate charge. Simple drive requirements. Hermetically sealed. Surface mount. Light weight. [See More]
- Polarity: P-Channel; P
- QG: 3.6
- V(BR)DSS: -60
- Package Type: C-LCC-4
from Rochester Electronics
30V, P-Channel Ld Lineup Power MOSFET [See More]
- Polarity: P-Channel
from Texas Instruments
P-Channel NexFET Power MOSFET 3-PICOSTAR 0 to 0 [See More]
- Polarity: P-Channel
- rDS(on): 0.0760
- V(BR)DSS: -12
- IDSS: -22000
from Win Source Electronics
Win Source Part Number: 1091845-SCH1331-TL-W. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Bulk. Standard Package: 1. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: P-Channel. Drain to Source Voltage (Vdss): 12 V. Current - Continuous... [See More]
- Polarity: P-Channel
- PD: 1000
- QG: 5.6
- TJ: 150
from Infineon Technologies AG
Rad hard, -100V, -22A, single, P-channel MOSFET, R4 in a SMD-1 package - SMD-1, 100 krad(Si) TID, COTS. Features. Single event effect (SEE) hardened. Low RDS(on). Low total gate charge. Proton tolerant. Simple drive requirements. Hermetically sealed. Ceramic package. Surface mount. Light weight. ESD... [See More]
- Polarity: P-Channel; P
- QG: 200
- V(BR)DSS: -100
- Package Type: C-CCN-3
from Rochester Electronics
Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA [See More]
- Polarity: P-Channel
- Package Type: TO-262
- rDS(on): 0.0200
- Packing Method: Tube; Tube
from Texas Instruments
CSD25202W15 20-V P-Channel NexFET? Power MOSFET 9-DSBGA [See More]
- Polarity: P-Channel
- rDS(on): 0.0260
- V(BR)DSS: -20
- IDSS: -4000
from Win Source Electronics
Win Source Part Number: 983105-RRS090P03HZGTB. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 2,500. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: P-Channel. Drain to... [See More]
- Polarity: P-Channel
- PD: 2000
- QG: 30
- TJ: 150
from Infineon Technologies AG
Rad hard, -60V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 300 krad(Si) TID, COTS. Features. Single event effect (SEE) hardened. Low RDS(on). Low total gate charge. Simple drive requirements. Ease of paralleling. Hermetically sealed. Electrically isolated. Ceramic Package. Light... [See More]
- Polarity: P-Channel; P
- QG: 200
- V(BR)DSS: -60
- Package Type: C-CCN-3
from Rochester Electronics
Power Field-Effect Transistor, 5.9A I(D), 100V, 0.031ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET [See More]
- Polarity: P-Channel
- Package Type: MG-WDSON-5
- rDS(on): 0.0310
- Packing Method: Tape Reel; Tape & Reel
from Texas Instruments
P-Channel NexFET? Power MOSFET 6-DSBGA -55 to 150 [See More]
- Polarity: P-Channel
- rDS(on): 0.0330
- V(BR)DSS: -20
- IDSS: -9500
from Win Source Electronics
Win Source Part Number: 985467-RSS070P05HZGTB. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 2,500. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: P-Channel. Drain to... [See More]
- Polarity: P-Channel
- PD: 2000
- QG: 47.6
- TJ: 150
from Infineon Technologies AG
Rad hard, -60V, -56A, single, P-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, COTS, On DBC carrier. Features. Single event effect (SEE) hardened. Low RDS(on). Low total gate charge. Simple drive requirements. Ease of paralleling. Hermetically sealed. Electrically isolated. Ceramic... [See More]
- Polarity: P-Channel; P
- QG: 200
- V(BR)DSS: -60
- Package Type: C-CCN-3
from Rochester Electronics
20V-250V P-Channel Power MOSFET [See More]
- Polarity: P-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: PG-TDSON-8
from Texas Instruments
P-Channel NexFET? Power MOSFET 4-DSBGA -55 to 150 [See More]
- Polarity: P-Channel
- rDS(on): 0.0470
- V(BR)DSS: -20
- IDSS: -16000
from Win Source Electronics
Win Source Part Number: 992355-FQI17P10TU. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: QFET ™. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: P-Channel. Drain to Source Voltage (Vdss): 100 V. Current - Continuous... [See More]
- Polarity: P-Channel
- PD: 3750 to 100000
- QG: 39
- TJ: -55 to 175
from Infineon Technologies AG
Rad hard, -100V, -3.1A, single, P-channel MOSFET, R5 in a SMD-0.2 package. Slash sheet. Similar Parts. IRHNMC597110. SMD-0.2, 100 krad(Si) TID, COTS. IRHNM597110. SMD-0.2, 100 krad(Si) TID, COTS. JANSR2N7506U8C. SMD-0.2, 100 krad(Si) TID, QPL. JANSR2N7506U8. SMD-0.2, 100 krad(Si) TID, QPL. [See More]
- Polarity: P-Channel; P
- QG: 11
- V(BR)DSS: -100
- Package Type: C-CCN-3
from Rochester Electronics
20V-250V P-Channel Power MOSFET [See More]
- Polarity: P-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SO-8; PG-DSO-8
from Texas Instruments
CSD25304W1015 20-V P-Channel NexFET? Power MOSFET 6-DSBGA [See More]
- Polarity: P-Channel
- rDS(on): 0.0325
- V(BR)DSS: -20
- QG: 3.3
from Win Source Electronics
Win Source Part Number: 1350535-RS1L151ATTB1. Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs. Package: Tape & Reel. Standard Package: 2,500. Technology: MOSFET (Metal Oxide). FET Type: P-Channel. Drain to Source Voltage (Vdss): 60 V. Power... [See More]
- Polarity: P-Channel
- PD: 3000
- QG: 130
- TJ: 150
from Infineon Technologies AG
Infineon ’s highly innovative OptiMOS ™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. Summary of... [See More]
- Polarity: P-Channel; P
- rDS(on): 0.0030
- Transistor Technology / Material: Si/SiC
- TJ: -55 to 150
from Rochester Electronics
BSP92 - Power Field-Effect Transistor, 0.26A, 250V, 12ohm, P-Channel, MOSFET [See More]
- Polarity: P-Channel
- Package Type: SOT223; SOT-223
- rDS(on): 12
from Texas Instruments
20-V P-Channel NexFET Power MOSFET, CSD25310Q2 6-WSON -40 to 85 [See More]
- Polarity: P-Channel
- rDS(on): 0.0239
- V(BR)DSS: -20
- IDSS: -48000
from Win Source Electronics
Win Source Part Number: 1351857-TJ90S04M3L,LQ. Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs. Series: U-MOSVI. Package: Tape & Reel. Standard Package: 2,000. Technology: MOSFET (Metal Oxide). FET Type: P-Channel. Drain to Source Voltage (Vdss): 40... [See More]
- Polarity: P-Channel
- PD: 180000
- QG: 172
- TJ: 175
from Infineon Technologies AG
Infineon ’s highly innovative OptiMOS ™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. Summary of... [See More]
- Polarity: P-Channel; P
- rDS(on): 0.0080
- Transistor Technology / Material: Si/SiC
- TJ: -55 to 150
from Rochester Electronics
CPH3351 - Single P-Channel Power MOSFET, -60V, -1.8A, 250m [See More]
- Polarity: P-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: CPH3
from Texas Instruments
P-Channel NexFET Power MOSFET 8-VSONP -55 to 125 [See More]
- Polarity: P-Channel
- rDS(on): 0.0089
- V(BR)DSS: -20
- IDSS: -82000
from Win Source Electronics
Win Source Part Number: 1382327-IRF9240. Category: Discrete Semiconductor Products >Transistors >FETs, MOSFETs >Single FETs, MOSFETs. Series: HEXFET ®. Package: Bulk. Technology: MOSFET (Metal Oxide). FET Type: P-Channel. Drain to Source Voltage (Vdss): 200 V. Current - Continuous... [See More]
- Polarity: P-Channel
- PD: 125000
- QG: 60
- TJ: -55 to 150
from Infineon Technologies AG
Infineon ’s highly innovative OptiMOS ™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. Summary of... [See More]
- Polarity: P-Channel; P
- rDS(on): 0.0086
- Transistor Technology / Material: Si/SiC
- TJ: -55 to 150
from Rochester Electronics
P-Channel Power MOSFET, 30V [See More]
- Polarity: P-Channel
- Package Type: SOT23; SOT-23-3
from Texas Instruments
Dual P-Channel NexFET? Power MOSFET 9-DSBGA -55 to 150 [See More]
- Polarity: P-Channel
- IDSS: -24000
- rDS(on): 0.0270
- QG: 2.9
from Win Source Electronics
Alternative Parts (Cross-Reference): Cross. Manufacturer: Rohm Semiconductor. Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs. Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel ®. Product Status: Active. FET Type: P-Channel. Technology: MOSFET (Metal... [See More]
- Polarity: P-Channel
- Package Type: SOT3
- QG: 15.2
from Infineon Technologies AG
OptiMOS ™ P-Channel MOSFET 100V in D ²PAK. OptiMOS ™ P-Channel MOSFETs 100V in D ²PAK package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-Channel device is the reduction of... [See More]
- Polarity: P-Channel; P
- rDS(on): 0.1850
- Transistor Technology / Material: Si/SiC
- QG: -36
from Rochester Electronics
Power Field-Effect Transistor, -104A I(D), 20V, 0.0121ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET [See More]
- Polarity: P-Channel
- Package Type: VSON-CLIP (DQG)
- rDS(on): 0.0121
- Packing Method: Tape Reel; Tape & Reel
from Texas Instruments
CSD75208W1015, Dual Common Source 20-V P-Channel NexFET? Power MOSFETs 6-DSBGA -40 to 85 [See More]
- Polarity: P-Channel
- rDS(on): 0.1080
- V(BR)DSS: -20
- IDSS: -22000
from Win Source Electronics
Alternative Parts (Cross-Reference): Cross. Manufacturer: Rohm Semiconductor. Category: Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs. Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel ®. Product Status: Active. FET Type: P-Channel. Technology: MOSFET (Metal... [See More]
- Polarity: P-Channel
- Package Type: SOT3
from Infineon Technologies AG
P-channel enhancement mode Field-Effect Transistor (FET), -30 V, D-PAK. Infineon ’s highly innovative OptiMOS ™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as... [See More]
- Polarity: P-Channel; P
- rDS(on): 0.0042
- Transistor Technology / Material: Si/SiC
- TJ: -55 to 175
from Rochester Electronics
Power Field-Effect Transistor, -104A I(D), 20V, 0.0121ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET [See More]
- Polarity: P-Channel
- Package Type: PowerTDFN8
- rDS(on): 0.0121
- Packing Method: Tape Reel; Tape & Reel
from Win Source Electronics
Manufacturer: Rohm Semiconductor. Category: Discrete Semiconductor Products- Transistors -FETs, MOSFETs- Single FETs, MOSFETs. Package: Tape & Reel (TR) Cut Tape (CT). Product Status: Active. FET Type: P-Channel. Technology: MOSFET (Metal Oxide). Rds On (Max) @ Id, Vgs: 12.7mOhm @ 70A, 10V. [See More]
- Polarity: P-Channel
- Package Type: SOT3
- PD: 101000
from Infineon Technologies AG
-55V Single P-Channel Power MOSFET in a TO-220 package. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered... [See More]
- Polarity: P-Channel; P
- rDS(on): 0.0200
- Transistor Technology / Material: Si/SiC
- TJ: 175
from Rochester Electronics
P-Channel PowerTrench MOSFET 30V [See More]
- Polarity: P-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SOT23; TSOT-23-6
from Win Source Electronics
Manufacturer: Rohm Semiconductor. Category: Discrete Semiconductor Products- Transistors -FETs, MOSFETs-Single FETs, MOSFETs. Package: Tape & Reel (TR) Cut Tape (CT). Product Status: Active. FET Type: P-Channel. Technology: MOSFET (Metal Oxide). Drain to Source Voltage (Vdss): 60 V. Rds On (Max)... [See More]
- Polarity: P-Channel
- Package Type: SOT3
- QG: 48
from Infineon Technologies AG
-55V Single P-Channel Power MOSFET in a TO-262 package. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered... [See More]
- Polarity: P-Channel; P
- rDS(on): 0.0200
- Transistor Technology / Material: Si/SiC
- TJ: 150
from Rochester Electronics
Power Field-Effect Transistor, 7.8A I(D), 20V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET [See More]
- Polarity: P-Channel
- Package Type: UQFN
- rDS(on): 0.0240
- Packing Method: Tape Reel; Tape & Reel
from Win Source Electronics
Manufacturer: Infineon Technologies. Win Source Part Number: 1187426-IRF9310PBF. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: P-Channel. Family Name: IRF9310. Categories: Discrete Semiconductor Products. Supplier Device Package: 8-SO. Drive Voltage (Max Rds On, Min... [See More]
- Polarity: P-Channel; P-Channel
- QG: 165
- V(BR)DSS: 30
- PD: 2500
from Infineon Technologies AG
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package. Benefits. Planar cell structure for wide SOA. Optimized for broadest availability from distribution partners. Product qualification according to JEDEC standard. Silicon optimized for applications switching below <100kHz. Industry... [See More]
- Polarity: P-Channel; P
- rDS(on): 0.0200
- Transistor Technology / Material: Si/SiC
- TJ: 150
from Rochester Electronics
Power Field-Effect Transistor, 75A I(D), 20V, 0.0049ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA [See More]
- Polarity: P-Channel
- Packing Method: Tape Reel; Tape & Reel
- rDS(on): 0.0049
from Win Source Electronics
Manufacturer: Vishay Siliconix. Win Source Part Number: 1187442-IRF9530STRLPBF. Packaging: Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]
- Polarity: P-Channel; P-Channel
- QG: 38
- V(BR)DSS: 100
- PD: 3700 to 88000
from Infineon Technologies AG
IR MOSFET -40 V in a SO-8 package. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications. Benefits. [See More]
- Polarity: P-Channel; P
- rDS(on): 0.0150
- Transistor Technology / Material: Si/SiC
- TJ: 150
from Rochester Electronics
FDS6679 - P-Channel PowerTrench MOSFET [See More]
- Polarity: P-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SOIC8
from Win Source Electronics
Manufacturer: Vishay Siliconix. Win Source Part Number: 1187479-IRF9Z34. Packaging: Tube. Mounting Style: Through Hole. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: TO-220AB. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]
- Polarity: P-Channel; P-Channel
- QG: 34
- V(BR)DSS: 60
- PD: 88000
from Infineon Technologies AG
-30V Single P-Channel StrongIRFET ™ Power MOSFET in a PQFN 5x6 package. The StrongIRFET ™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio... [See More]
- Polarity: P-Channel; P
- rDS(on): 0.0046
- Transistor Technology / Material: Si/SiC
- TJ: 150
from Rochester Electronics
High Speed Switching P-Channel Power MosFET, 100V, 50A [See More]
- Polarity: P-Channel
- Packing Method: Tray
- Package Type: TO-3; TO-3P-3
from Win Source Electronics
Manufacturer: Vishay Siliconix. Win Source Part Number: 1187483-IRF9Z34STRL. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]
- Polarity: P-Channel; P-Channel
- QG: 34
- V(BR)DSS: 60
- PD: 3700 to 88000
from Infineon Technologies AG
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package. Benefits. RoHS Compliant. Low RDS(on). Industry-leading quality. Dynamic dv/dt Rating. Fast Switching. Fully Avalanche Rated. 175 °C Operating Temperature. P-Channel MOSFET. Applications. Consumer electronics. Smart buildings. [See More]
- Polarity: P-Channel; P
- rDS(on): 0.0650
- Transistor Technology / Material: Si/SiC
- TJ: 175
from Rochester Electronics
Power Field-Effect Transistor, 15A, 60V, P-Channel MOSFET [See More]
- Polarity: P-Channel
- Package Type: TO-220; TO-220FM
from Win Source Electronics
Manufacturer: Vishay Siliconix. Win Source Part Number: 1187956-IRFR9020TR. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D-Pak. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]
- Polarity: P-Channel; P-Channel
- QG: 14
- V(BR)DSS: 50
- PD: 42000
from Infineon Technologies AG
-55V Single P-Channel Power MOSFET in a I-Pak package. The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered... [See More]
- Polarity: P-Channel; P
- rDS(on): 0.0650
- Transistor Technology / Material: Si/SiC
- TJ: 175
from Rochester Electronics
High Speed Power P-Channel MOSFET [See More]
- Polarity: P-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: TSSOP8
from Win Source Electronics
Manufacturer: Vishay Siliconix. Win Source Part Number: 1187957-IRFR9020TRL. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D-Pak. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]
- Polarity: P-Channel; P-Channel
- QG: 14
- V(BR)DSS: 50
- PD: 42000
from Infineon Technologies AG
-20V P-Channel StrongIRFET ™ Power MOSFET in a PQFN 2x2 package. The StrongIRFET ™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio... [See More]
- Polarity: P-Channel; P
- TJ: 150
- Transistor Technology / Material: Si/SiC
- Package Type: PG-TSDSON-6
from Rochester Electronics
Power Field-Effect Transistor, 4.4A, 20V, P-Channel MOSFET [See More]
- Polarity: P-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SOT
from Win Source Electronics
Manufacturer: Vishay Siliconix. Win Source Part Number: 1187966-IRFR9110. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D-Pak. Drive Voltage (Max Rds On, Min Rds On): 10V. Status:... [See More]
- Polarity: P-Channel; P-Channel
- QG: 8.7
- V(BR)DSS: 100
- PD: 2500 to 25000
from Infineon Technologies AG
-20V Single P-Channel StrongIRFET ™ Power MOSFET in a SOT-23 package. The StrongIRFET ™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio... [See More]
- Polarity: P-Channel; P
- TJ: 150
- Transistor Technology / Material: Si/SiC
- Package Type: SOT23; SOT23
from Rochester Electronics
Power Field-Effect Transistor, 45A, 30V, P-Channel MOSFET [See More]
- Polarity: P-Channel
- Package Type: LFPAK5
from Win Source Electronics
Manufacturer: Vishay Siliconix. Win Source Part Number: 1187971-IRFR9120TRL. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D-Pak. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]
- Polarity: P-Channel; P-Channel
- QG: 18
- V(BR)DSS: 100
- PD: 2500 to 42000
from Infineon Technologies AG
-20V Single P-Channel StrongIRFET ™ MOSFET in a TSOP-6 (Micro 6) package. The StrongIRFET ™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio... [See More]
- Polarity: P-Channel; P
- TJ: 150
- Transistor Technology / Material: Si/SiC
- Package Type: TSOP6L
from Rochester Electronics
Power Field-Effect Transistor, 180A I(D), 40V, 0.0028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 [See More]
- Polarity: P-Channel
- Package Type: PG-TO263-7
- rDS(on): 0.0028
- Packing Method: Tape Reel; Tape & Reel
from Win Source Electronics
Manufacturer: Vishay Siliconix. Win Source Part Number: 1187973-IRFR9210TR. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D-Pak. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]
- Polarity: P-Channel; P-Channel
- QG: 8.9
- V(BR)DSS: 200
- PD: 2500 to 25000
from Infineon Technologies AG
OptiMOS ™ P-Channel MOSFET 150V in SOT-223. OptiMOS ™ P-Channel MOSFETs 150V in SOT-223 package represents the new technology targeted for battery management, load switch and reverse polarity protection applications. The main advantage of a P-Channel device is the reduction of design... [See More]
- Polarity: P-Channel; P
- rDS(on): 1.38
- Transistor Technology / Material: Si/SiC
- QG: -11.6
from Rochester Electronics
3.5A, 100V, 0.8ohm, P-Channel, POWER MOSFET [See More]
- Polarity: P-Channel
- Package Type: CAN3/4
- rDS(on): 0.8000
from Win Source Electronics
Manufacturer: Vishay Siliconix. Win Source Part Number: 1187975-IRFR9214TR. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D-Pak. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]
- Polarity: P-Channel; P-Channel
- QG: 14
- V(BR)DSS: 250
- PD: 50000
from Infineon Technologies AG
P-channel enhancement mode Field-Effect Transistor (FET), -60V, D2PAK. Infineon ’s highly innovative OptiMOS ™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as... [See More]
- Polarity: P-Channel; P
- rDS(on): 0.0230
- Transistor Technology / Material: Si/SiC
- TJ: -55 to 175
from Rochester Electronics
Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA [See More]
- Polarity: P-Channel
- Package Type: IPAK
- rDS(on): 0.0650
- Packing Method: Tube; Tube
from Win Source Electronics
Manufacturer: Vishay Siliconix. Win Source Part Number: 1187977-IRFR9220. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D-Pak. Drive Voltage (Max Rds On, Min Rds On): 10V. Status:... [See More]
- Polarity: P-Channel; P-Channel
- QG: 20
- V(BR)DSS: 200
- PD: 2500 to 42000
from Utmel Electronic Limited
Dual P-Channel ChipFET ™ Power MOSFET -20V -4.1A 80m Ω, ChipFET, 3000-REEL [See More]
- Polarity: P-Channel
from ROHM Semiconductor USA, LLC
The Power MOSFET QS8J13 is suitable for switching power supply. [See More]
- Polarity: P-Channel
- IDSS: -5500
- V(BR)DSS: -12
- QG: 60
from ROHM Semiconductor GmbH
The Power MOSFET QS8J13 is suitable for switching power supply. [See More]
- Polarity: P-Channel
- IDSS: -5500
- V(BR)DSS: -12
- QG: 60
from Utmel Electronic Limited
MOSFET Dual P-Channel Nex FET Power MOSFET [See More]
- Polarity: P-Channel
- Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: 20
from ROHM Semiconductor USA, LLC
TT8J3 is complex type MOSFET(Pch+Pch) for switching application. [See More]
- Polarity: P-Channel
- IDSS: -2500
- V(BR)DSS: -30
- QG: 4.8
from ROHM Semiconductor GmbH
The UT6J3 is a Small Surface Mount Package MOSFET for switching application. [See More]
- Polarity: P-Channel
- IDSS: -3000
- V(BR)DSS: -20
- QG: 8.5
from Utmel Electronic Limited
P-Channel Power MOSFET, -50V, -0.14A, 23 Ohm, Dual MCPH6 [See More]
- Polarity: P-Channel
- QG: 1.4
- V(BR)DSS: -50
- PD: 800
from ROHM Semiconductor USA, LLC
UT6JA2 is low on-resistance and small surface mount package MOSFET for switching application. [See More]
- Polarity: P-Channel
- IDSS: -4000
- V(BR)DSS: -30
- QG: 3.4
from ROHM Semiconductor GmbH
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]
- Polarity: P-Channel
- IDSS: -9000
- V(BR)DSS: -30
- QG: 35
from Utmel Electronic Limited
Single P-Channel 20 V 25 mOhm SMT TrenchFET Power Mosfet - PowerPAK SC-70-6L [See More]
- Polarity: P-Channel
- Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: -20
from ROHM Semiconductor USA, LLC
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]
- Polarity: P-Channel
- IDSS: 9000
- V(BR)DSS: -30
- QG: 35
from ROHM Semiconductor GmbH
HP8M51TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for switching application. [See More]
- Polarity: N-Channel; P-Channel
- IDSS: 4500
- V(BR)DSS: 100
- QG: 8.5
from Utmel Electronic Limited
Single P-Channel 200 V 0.8 Ohm Flange Mount Power Mosfet - TO-220AB [See More]
- Polarity: P-Channel
- rDS(on): 8.00E8
- V(BR)DSS: -200
- QG: 29
from ROHM Semiconductor USA, LLC
RRR040P03FRA is the high reliability Automotive MOSFET, suitable for the DC/DC converter. [See More]
- Polarity: P-Channel
- IDSS: -4000
- V(BR)DSS: -30
- QG: 10.5
from ROHM Semiconductor GmbH
Two MOSFETs of 30V Pch and Nch (common drain configuration) are built in a symmetric dual package. Ideal for switching and motor drive applications. [See More]
- Polarity: N-Channel; P-Channel
- IDSS: 7000
- V(BR)DSS: 30
- QG: 4.7
from Utmel Electronic Limited
Single P-Channel 55 V 60 mOhm 42 nC HEXFET ® Power Mosfet - D2PAK [See More]
- Polarity: P-Channel
- Operating Mode: Enhancement; ENHANCEMENT MODE
- Transistor Technology / Material: SILICON
- V(BR)DSS: -55
from ROHM Semiconductor USA, LLC
Small surface mount package RQ6P015SP is suitable for DC/DC converters. [See More]
- Polarity: P-Channel
- IDSS: -1500
- V(BR)DSS: -100
- QG: 17
from ROHM Semiconductor GmbH
RD3P130SPFRA is a power MOSFET with low on - resistance, suitable for switching. [See More]
- Polarity: P-Channel
- IDSS: -13000
- V(BR)DSS: -100
- QG: 40
from Utmel Electronic Limited
Single P-Channel Power MOSFET -20V, -15A, 6.7mO [See More]
- Polarity: P-Channel
- QG: 56
- V(BR)DSS: -20
- PD: 2200
from ROHM Semiconductor USA, LLC
RSD131P10 is a Power MOSFET with Low on-resistance and Fast switching speed, suitable for switching. [See More]
- Polarity: P-Channel
- IDSS: -13000
- V(BR)DSS: -100
- QG: 40
from ROHM Semiconductor GmbH
Small surface mount package RQ6P015SP is suitable for DC/DC converters. [See More]
- Polarity: P-Channel
- IDSS: -1500
- V(BR)DSS: -100
- QG: 17
from ROHM Semiconductor USA, LLC
The high power small mold package RF4C050AP is suitable for switching and load switch. [See More]
- Polarity: P-Channel
- IDSS: -10000
- V(BR)DSS: -20
- QG: 55
from ROHM Semiconductor GmbH
RD3P130SP is a Power MOSFET with Low on - resistance, suitable for Switching. [See More]
- Polarity: P-Channel
- IDSS: -13000
- V(BR)DSS: -100
- QG: 40
from ROHM Semiconductor USA, LLC
The Middle Power MOSFET RQ3C150BC is suitable for switching and load switch. [See More]
- Polarity: P-Channel
- IDSS: -30000
- V(BR)DSS: -20
- QG: 60
from ROHM Semiconductor GmbH
MOSFET, one of Field Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market. [See More]
- Polarity: P-Channel
- IDSS: -25000
- V(BR)DSS: -100
- QG: 60
from ROHM Semiconductor USA, LLC
RF6C055BC is Low on-resistance and high power small mold package MOSFET for switching. [See More]
- Polarity: P-Channel
- IDSS: -5500
- V(BR)DSS: -20
- QG: 15.2
from ROHM Semiconductor GmbH
The RQ5A03AP is a High Power small mold Package MOSFET for switching application. [See More]
- Polarity: P-Channel
- IDSS: -3000
- V(BR)DSS: -12
- QG: 16
from ROHM Semiconductor GmbH
The high power small mold package RF4C050AP is suitable for switching and load switch. [See More]
- Polarity: P-Channel
- IDSS: -10000
- V(BR)DSS: -20
- QG: 55
from ROHM Semiconductor GmbH
The Middle Power MOSFET RQ3C150BC is suitable for switching and load switch. [See More]
- Polarity: P-Channel
- IDSS: -37000
- V(BR)DSS: -20
- QG: 60
from ROHM Semiconductor GmbH
RW4C045BC is a MOSFET for DC/DC converters, switching, battery switches. [See More]
- Polarity: P-Channel
- IDSS: -4500
- V(BR)DSS: -20
- QG: 6.5
from ROHM Semiconductor GmbH
RF6C055BC is Low on-resistance and high power small mold package MOSFET for switching. [See More]
- Polarity: P-Channel
- IDSS: -5500
- V(BR)DSS: -20
- QG: 15.2
from ROHM Semiconductor GmbH
RS1E220AT is a power MOSFET, suitable for switching applications. [See More]
- Polarity: P-Channel
- IDSS: -76000
- V(BR)DSS: -30
- QG: 65