P-Channel Power MOSFET

89 Results
Home MOSFET, 20V-100V N-Channel Small Power MOSFET -- IRF9310
from Infineon Technologies AG

Target Applications: - Battery Protection. - Load Switch High Side. - Load Switch Low Side [See More]

  • Polarity: P-Channel
  • Package Type: SO-8; SO-8
  • QG: 58
-12V Pch+Pch Middle Power MOSFET -- QS8J13
from ROHM Semiconductor GmbH

The Power MOSFET QS8J13 is suitable for switching power supply. [See More]

  • Polarity: P-Channel
  • IDSS: -5500
  • V(BR)DSS: -12
  • QG: 60
2N6847 [2N6847 from Infineon Technologies AG]
from Rochester Electronics

2N6847 - Power Field-Effect Transistor, P-Channel, MOSFET [See More]

  • Polarity: P-Channel
  • Package Type: TO-205AF
CSD22202W15 P-Channel NexFET? Power MOSFET -- CSD22202W15
from Texas Instruments

P-Channel NexFET? Power MOSFET 9-DSBGA -55 to 150 [See More]

  • Polarity: P-Channel
  • rDS(on): 0.0122
  • V(BR)DSS: -8
  • IDSS: -48000
P Channel Power Mosfet, Hexfet, -20V, -2.6A, Sot-23; Transistor Polarity Infineon -- 40T7450 [IRLML2246TRPBF from Infineon Technologies AG]
from Newark, An Avnet Company

P CHANNEL POWER MOSFET, HEXFET, -20V, -2.6A, SOT-23; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.6A; On Resistance Rds(on):0.09ohm; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes [See More]

  • Polarity: P-Channel
  • rDS(on): 0.0900
  • Transistor Type: P Channel Power Mosfet, Hexfet, -20V, -2.6A, Sot-23; Transistor Polarity Infineon
  • IDSS: 2600
Home MOSFET, 20V-100V N-Channel Small Power MOSFET -- IRFHM9331
from Infineon Technologies AG

Target Applications: - Battery Protection. - Load Switch High Side. - Load Switch Low Side [See More]

  • Polarity: P-Channel
  • Package Type: PQFN 3 x 3
  • QG: 16
-20V Pch+Pch Power MOSFET -- UT6J3
from ROHM Semiconductor GmbH

The UT6J3 is a Small Surface Mount Package MOSFET for switching application. [See More]

  • Polarity: P-Channel
  • IDSS: -3000
  • V(BR)DSS: -20
  • QG: 8.5
2SJ135-AZ [2SJ135-AZ from Renesas Electronics Corporation]
from Rochester Electronics

2SJ135 - Power Field-Effect Transistor, 5A, 100V, P-Channel, MOSFET [See More]

  • Polarity: P-Channel
  • Packing Method: Bag
  • Package Type: TO-220; TO-220-3
CSD23202W10 CSD23202W10 12 V P-Channel NexFET(TM) Power MOSFET -- CSD23202W10
from Texas Instruments

CSD23202W10 12 V P-Channel NexFET(TM) Power MOSFET 4-DSBGA [See More]

  • Polarity: P-Channel
  • rDS(on): 0.0530
  • V(BR)DSS: -12
  • IDSS: -25000
P Channel Power Mosfet, Stripfet, -30V, -5A, So-8; Transistor Polarity Stmicroelectronics -- 57P2236 [STS5PF30L from STMicroelectronics, Inc.]
from Newark, An Avnet Company

P CHANNEL POWER MOSFET, STripFET, -30V, -5A, SO-8; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5A; On Resistance Rds(on):0.045ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes [See More]

  • Polarity: P-Channel
  • rDS(on): 0.0450
  • Transistor Type: P Channel Power Mosfet, Stripfet, -30V, -5A, So-8; Transistor Polarity Stmicroelectronics
  • IDSS: 5000
Home MOSFET, 20V-100V N-Channel Small Power MOSFET -- IRFHS9301
from Infineon Technologies AG

Target Applications: - Battery Protection. - DC Switches. - Load Switch. - Load Switch High Side. - Load Switch Low Side [See More]

  • Polarity: P-Channel
  • Package Type: PQFN 2 x 2
  • QG: 6.9
-30V Pch+Pch Power MOSFET -- SH8J66
from ROHM Semiconductor GmbH

Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

  • Polarity: P-Channel
  • IDSS: -9000
  • V(BR)DSS: -30
  • QG: 35
2SJ172-E [2SJ172-E from Renesas Electronics Corporation]
from Rochester Electronics

2SJ172 - Power Field-Effect Transistor, 10A, 60V, P-Channel MOSFET [See More]

  • Polarity: P-Channel
  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: CAN3/4
CSD23203W CSD23203W 8 V P-Channel NexFET? Power MOSFET -- CSD23203W
from Texas Instruments

CSD23203W 8 V P-Channel NexFET? Power MOSFET 6-DSBGA [See More]

  • Polarity: P-Channel
  • rDS(on): 0.0194
  • V(BR)DSS: -8
  • IDSS: -54000
Home MOSFET, 20V-100V N-Channel Small Power MOSFET -- IRFTS9342
from Infineon Technologies AG

Target Applications: - Battery Protection. - DC Switches. - Load Switch. - Load Switch High Side. - Load Switch Low Side [See More]

  • Polarity: P-Channel
  • Package Type: TSOP-6
  • QG: 12
100V Nch+Pch Power MOSFET -- HP8M51
from ROHM Semiconductor GmbH

HP8M51TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for switching application. [See More]

  • Polarity: N-Channel; P-Channel
  • IDSS: 4500
  • V(BR)DSS: 100
  • QG: 8.5
2SJ279S-E [2SJ279S-E from Renesas Electronics Corporation]
from Rochester Electronics

2SJ279 - Power Field-Effect Transistor, 5A, 60V, P-Channel MOSFET [See More]

  • Polarity: P-Channel
  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: DPAK3
CSD23382F4 P-Channel NexFET Power MOSFET -- CSD23382F4
from Texas Instruments

P-Channel NexFET Power MOSFET 3-PICOSTAR 0 to 0 [See More]

  • Polarity: P-Channel
  • rDS(on): 0.0760
  • V(BR)DSS: -12
  • IDSS: -22000
Home MOSFET, 20V-100V N-Channel Small Power MOSFET -- IRLML2244
from Infineon Technologies AG

Target Applications: - Battery Protection. - DC Switches. - Load Switch. - Load Switch High Side. - Load Switch Low Side [See More]

  • Polarity: P-Channel
  • Package Type: SOT23; SOT-23
  • QG: 6.9
30V Dual Common Drain Pch+Nch Power MOSFET -- HS8MA2
from ROHM Semiconductor GmbH

Two MOSFETs of 30V Pch and Nch (common drain configuration) are built in a symmetric dual package. Ideal for switching and motor drive applications. [See More]

  • Polarity: N-Channel; P-Channel
  • IDSS: 7000
  • V(BR)DSS: 30
  • QG: 4.7
2SJ296STL-E [2SJ296STL-E from Renesas Electronics Corporation]
from Rochester Electronics

2SJ296S - Power Field-Effect Transistor, 15A, 60V, P-Channel MOSFET [See More]

  • Polarity: P-Channel
  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: LDPAK3
CSD25202W15 CSD25202W15 20-V P-Channel NexFET? Power MOSFET -- CSD25202W15
from Texas Instruments

CSD25202W15 20-V P-Channel NexFET? Power MOSFET 9-DSBGA [See More]

  • Polarity: P-Channel
  • rDS(on): 0.0260
  • V(BR)DSS: -20
  • IDSS: -4000
Home MOSFET, 20V-250V P-Channel Power MOSFET -- BSL207SP
from Infineon Technologies AG

Infineon ’s highly innovative OptiMOS ™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics. Summary of... [See More]

  • Polarity: P-Channel
  • QG: -13.3
  • Operating Mode: Enhancement
  • TJ: -55 to ?
Automotive Pch -100V -13A Power MOSFET -- RD3P130SPFRA
from ROHM Semiconductor GmbH

RD3P130SPFRA is a power MOSFET with low on - resistance, suitable for switching. [See More]

  • Polarity: P-Channel
  • IDSS: -13000
  • V(BR)DSS: -100
  • QG: 40
2SJ328-Z-E1-AZ [2SJ328-Z-E1-AZ from Renesas Electronics Corporation]
from Rochester Electronics

2SJ328 - Switching P-Channel Power MOSFET [See More]

  • Polarity: P-Channel
  • Package Type: MP-25Z
CSD25211W1015 P-Channel NexFET? Power MOSFET -- CSD25211W1015
from Texas Instruments

P-Channel NexFET? Power MOSFET 6-DSBGA -55 to 150 [See More]

  • Polarity: P-Channel
  • rDS(on): 0.0330
  • V(BR)DSS: -20
  • IDSS: -9500
Home MOSFET, 20V-250V P-Channel Power MOSFET -- IRF4905
from Infineon Technologies AG

Home MOSFET, 20V-250V P-Channel Power MOSFET [See More]

  • Polarity: P-Channel
  • Package Type: TO-220; TO-220
  • QG: 120
Pch -100V -1.5A Power MOSFET -- RQ6P015SP
from ROHM Semiconductor GmbH

Small surface mount package RQ6P015SP is suitable for DC/DC converters. [See More]

  • Polarity: P-Channel
  • IDSS: -1500
  • V(BR)DSS: -100
  • QG: 17
2SJ387L-E [2SJ387L-E from Renesas Electronics Corporation]
from Rochester Electronics

2SJ387 - Power Field-Effect Transistor, 10A, 20V, P-Channel MOSFET [See More]

  • Polarity: P-Channel
  • Package Type: IPAK-3
CSD25213W10 P-Channel NexFET? Power MOSFET -- CSD25213W10
from Texas Instruments

P-Channel NexFET? Power MOSFET 4-DSBGA -55 to 150 [See More]

  • Polarity: P-Channel
  • rDS(on): 0.0470
  • V(BR)DSS: -20
  • IDSS: -16000
Home MOSFET, 20V-250V P-Channel Power MOSFET -- IRF4905L
from Infineon Technologies AG

Home MOSFET, 20V-250V P-Channel Power MOSFET [See More]

  • Polarity: P-Channel
  • Package Type: I2PAK (TO-262)
  • QG: 120
Pch -100V -13A Power MOSFET -- RD3P130SP
from ROHM Semiconductor GmbH

RD3P130SP is a Power MOSFET with Low on - resistance, suitable for Switching. [See More]

  • Polarity: P-Channel
  • IDSS: -13000
  • V(BR)DSS: -100
  • QG: 40
2SJ418-TL-E [2SJ418-TL-E from onsemi]
from Rochester Electronics

2SJ418 - 30V, P-Channel Ld Lineup Power MOSFET [See More]

  • Polarity: P-Channel
CSD25304W1015 CSD25304W1015 20-V P-Channel NexFET? Power MOSFET -- CSD25304W1015
from Texas Instruments

CSD25304W1015 20-V P-Channel NexFET? Power MOSFET 6-DSBGA [See More]

  • Polarity: P-Channel
  • rDS(on): 0.0325
  • V(BR)DSS: -20
  • QG: 3.3
Home MOSFET, 20V-250V P-Channel Power MOSFET -- IRF4905S
from Infineon Technologies AG

Home MOSFET, 20V-250V P-Channel Power MOSFET [See More]

  • Polarity: P-Channel
  • Package Type: TO-263; D2PAK (TO-263)
  • QG: 120
Pch -100V -25A Power MOSFET -- RSJ250P10
from ROHM Semiconductor GmbH

MOSFET, one of Field Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market. [See More]

  • Polarity: P-Channel
  • IDSS: -25000
  • V(BR)DSS: -100
  • QG: 60
2SJ494-AZ [2SJ494-AZ from Renesas Electronics Corporation]
from Rochester Electronics

2SJ494 - Switching P-Channel Power MOSFET [See More]

  • Polarity: P-Channel
  • Packing Method: Bag
  • Package Type: TO-220; TO-220-3FP
CSD25310Q2 20-V P-Channel NexFET Power MOSFET, CSD25310Q2 -- CSD25310Q2
from Texas Instruments

20-V P-Channel NexFET Power MOSFET, CSD25310Q2 6-WSON -40 to 85 [See More]

  • Polarity: P-Channel
  • rDS(on): 0.0239
  • V(BR)DSS: -20
  • IDSS: -48000
Home MOSFET, 20V-250V P-Channel Power MOSFET -- IRF7406PBF-1
from Infineon Technologies AG

Home MOSFET, 20V-250V P-Channel Power MOSFET [See More]

  • Polarity: P-Channel
  • Package Type: SO-8; SO-8
  • QG: 39.3
Pch -12V -3A Middle Power MOSFET -- RQ5A030AP
from ROHM Semiconductor GmbH

The RQ5A03AP is a High Power small mold Package MOSFET for switching application. [See More]

  • Polarity: P-Channel
  • IDSS: -3000
  • V(BR)DSS: -12
  • QG: 16
2SJ532-E [2SJ532-E from Renesas Electronics Corporation]
from Rochester Electronics

2SJ532 - P-Channel Power MOSFET, 60V, 20A [See More]

  • Polarity: P-Channel
  • Package Type: TO-220; TO-220CFM
CSD25402Q3A P-Channel NexFET Power MOSFET -- CSD25402Q3A
from Texas Instruments

P-Channel NexFET Power MOSFET 8-VSONP -55 to 125 [See More]

  • Polarity: P-Channel
  • rDS(on): 0.0089
  • V(BR)DSS: -20
  • IDSS: -82000
Home MOSFET, 20V-250V P-Channel Power MOSFET -- IRF7606
from Infineon Technologies AG

Home MOSFET, 20V-250V P-Channel Power MOSFET [See More]

  • Polarity: P-Channel
  • Package Type: Micro8 (MO-187)
  • QG: 20
Pch -20V -10A Middle Power MOSFET -- RF4C050AP
from ROHM Semiconductor GmbH

The high power small mold package RF4C050AP is suitable for switching and load switch. [See More]

  • Polarity: P-Channel
  • IDSS: -10000
  • V(BR)DSS: -20
  • QG: 55
2SJ555-90-E [2SJ555-90-E from Renesas Electronics Corporation]
from Rochester Electronics

2SJ555 - High Speed Power P-Channel MOSFET [See More]

  • Polarity: P-Channel
  • Package Type: TO-3; TO-3P-3
CSD75207W15 Dual P-Channel NexFET? Power MOSFET -- CSD75207W15
from Texas Instruments

Dual P-Channel NexFET? Power MOSFET 9-DSBGA -55 to 150 [See More]

  • Polarity: P-Channel
  • IDSS: -24000
  • rDS(on): 0.0270
  • QG: 2.9
Home MOSFET, 20V-250V P-Channel Power MOSFET -- IRF9383M
from Infineon Technologies AG

Target Applications: - Battery Protection. - Load Switch High Side. - Load Switch Low Side [See More]

  • Polarity: P-Channel
  • Package Type: DirectFET MX
  • QG: 130
Pch -20V -37A Power MOSFET -- RQ3C150BC
from ROHM Semiconductor GmbH

The Middle Power MOSFET RQ3C150BC is suitable for switching and load switch. [See More]

  • Polarity: P-Channel
  • IDSS: -37000
  • V(BR)DSS: -20
  • QG: 60
AUIRFR5505TRL [AUIRFR5505TRL from Infineon Technologies AG]
from Rochester Electronics

AUIRFR5505 - Automotive HEXFET P-Channel Power MOSFET [See More]

  • Polarity: P-Channel
  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: DPAK-3
CSD75208W1015 CSD75208W1015, Dual Common Source 20-V P-Channel NexFET? Power MOSFETs -- CSD75208W1015
from Texas Instruments

CSD75208W1015, Dual Common Source 20-V P-Channel NexFET? Power MOSFETs 6-DSBGA -40 to 85 [See More]

  • Polarity: P-Channel
  • rDS(on): 0.1080
  • V(BR)DSS: -20
  • IDSS: -22000
Home MOSFET, 20V-250V P-Channel Power MOSFET -- IRFH9310
from Infineon Technologies AG

Home MOSFET, 20V-250V P-Channel Power MOSFET [See More]

  • Polarity: P-Channel
  • Package Type: PQFN 5 x 6 A
  • QG: 58
Pch -20V -4.5A Power MOSFET -- RW4C045BC
from ROHM Semiconductor GmbH

RW4C045BC is a MOSFET for DC/DC converters, switching, battery switches. [See More]

  • Polarity: P-Channel
  • IDSS: -4500
  • V(BR)DSS: -20
  • QG: 6.5
BSC200P03LSG [BSC200P03LSG from Infineon Technologies AG]
from Rochester Electronics

BSC200P03 - Power Field-Effect Transistor, 9.9A, 30V, 0.02ohm, P-Channel, MOSFET [See More]

  • Polarity: P-Channel
  • Package Type: DFN8
  • rDS(on): 0.0200
Home MOSFET, 20V-250V P-Channel Power MOSFET -- IRFHM9391
from Infineon Technologies AG

Target Applications: - Battery Protection. - Load Switch High Side. - Load Switch Low Side [See More]

  • Polarity: P-Channel
  • Package Type: PQFN 3.3 x 3.3 B
  • QG: 32
Pch -20V -5.5A Middle Power MOSFET -- RF6C055BC
from ROHM Semiconductor GmbH

RF6C055BC is Low on-resistance and high power small mold package MOSFET for switching. [See More]

  • Polarity: P-Channel
  • IDSS: -5500
  • V(BR)DSS: -20
  • QG: 15.2
BSL307SPL6327HTSA1 [BSL307SPL6327HTSA1 from Infineon Technologies AG]
from Rochester Electronics

BSL307 - Power Field-Effect Transistor, 5.5A, 30V, 0.043ohm, P-Channel, MOSFET [See More]

  • Polarity: P-Channel
  • Package Type: SC-74-6
  • rDS(on): 0.0430
Home MOSFET, 20V-250V P-Channel Power MOSFET -- IRFP9140N
from Infineon Technologies AG

Home MOSFET, 20V-250V P-Channel Power MOSFET [See More]

  • Polarity: P-Channel
  • Package Type: TO-247; TO-247
  • QG: 64.7
Pch -30V -76A Power MOSFET -- RS1E220AT
from ROHM Semiconductor GmbH

RS1E220AT is a power MOSFET, suitable for switching applications. [See More]

  • Polarity: P-Channel
  • IDSS: -76000
  • V(BR)DSS: -30
  • QG: 65
BSO203PH [BSO203PH from Infineon Technologies AG]
from Rochester Electronics

BSO203 - 20V-250V P-Channel Power MOSFET [See More]

  • Polarity: P-Channel
  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: DSO8
Home MOSFET, 20V-250V P-Channel Power MOSFET -- IRFR5305
from Infineon Technologies AG

Home MOSFET, 20V-250V P-Channel Power MOSFET [See More]

  • Polarity: P-Channel
  • Package Type: TO-252 (DPAK); DPAK (TO-252)
  • QG: 42
BSO203SP [BSO203SP from Infineon Technologies AG]
from Rochester Electronics

BSO203 - 20V-250V P-Channel Power MOSFET [See More]

  • Polarity: P-Channel
  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOIC8
Home MOSFET, 20V-250V P-Channel Power MOSFET -- IRFU5305
from Infineon Technologies AG

Home MOSFET, 20V-250V P-Channel Power MOSFET [See More]

  • Polarity: P-Channel
  • Package Type: IPAK (TO-251)
  • QG: 42
BSP92PL6327 [BSP92PL6327 from Infineon Technologies AG]
from Rochester Electronics

BSP92 - Power Field-Effect Transistor, 0.26A, 250V, 12ohm, P-Channel, MOSFET [See More]

  • Polarity: P-Channel
  • Package Type: SOT223; SOT-223
  • rDS(on): 12
Home MOSFET, 20V-250V P-Channel Power MOSFET -- IRLIB9343
from Infineon Technologies AG

Home MOSFET, 20V-250V P-Channel Power MOSFET [See More]

  • Polarity: P-Channel
  • Package Type: TO-220; TO-220-3 FP
  • QG: 31
CPH3355-TL-H [CPH3355-TL-H from onsemi]
from Rochester Electronics

CPH3355 - Single P-Channel Power MOSFET, -30V, -2.5A, 156m?? [See More]

  • Polarity: P-Channel
  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT23; SC-59, TO-236, SOT-23
Home MOSFET, 20V-250V P-Channel Power MOSFET -- IRLML6402GPBF
from Infineon Technologies AG

Home MOSFET, 20V-250V P-Channel Power MOSFET [See More]

  • Polarity: P-Channel
  • Package Type: SOT23; SOT-23
  • QG: 8
ECH8308-TL-H [ECH8308-TL-H from onsemi]
from Rochester Electronics

Power Field-Effect Transistor, P-Channel, MOSFET [See More]

  • Polarity: P-Channel
  • Packing Method: Tape Reel; TAPE & REEL
  • Package Type: TSSOP24
FDC608PZ-F171 [FDC608PZ-F171 from onsemi]
from Rochester Electronics

FDC608PZ - P-Channel PowerTrench MOSFET, 2.5V Specified, 20V, 5.8A [See More]

  • Polarity: P-Channel
  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT23; SOT-23-6 Thin, TSOT-23-6
FDFMA2P853T [FDFMA2P853T from onsemi]
from Rochester Electronics

20V, 0.12ohm, P-Channel Power MOSFET [See More]

  • Polarity: P-Channel
  • Package Type: DFN6
  • rDS(on): 0.1200
FDJ1027P [FDJ1027P from onsemi]
from Rochester Electronics

Power Field-Effect Transistor, 2.8A, 20V, 0.16ohm, 2-Element, P-Channel, MOSFET [See More]

  • Polarity: P-Channel
  • Package Type: SC-75-6
  • rDS(on): 0.1600
FDMC8097AC [FDMC8097AC from onsemi]
from Rochester Electronics

FDMC8097AC - Dual N & P-Channel PowerTrench MOSFET 150V [See More]

  • Polarity: P-Channel
  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: WDFN8
FDW6923 [FDW6923 from onsemi]
from Rochester Electronics

3.5A, 20V, 0.045ohm, P-Channel Power MOSFET [See More]

  • Polarity: P-Channel
  • Package Type: TSSOP8
  • rDS(on): 0.0450
FDZ193P [FDZ193P from onsemi]
from Rochester Electronics

Power Field-Effect Transistor, 3A, 20V, 0.3ohm, P-Channel, MOSFET [See More]

  • Polarity: P-Channel
  • Package Type: UFBGA6
  • rDS(on): 0.3000
  • Packing Method: Tape Reel; TAPE & REEL
-20V DUAL P-CHANNEL HEXFET POWER MOSFETIN A MICRO 8 PACKAGE -- 70017198 [IRF7555TRPBF from Infineon Technologies AG]
from Allied Electronics, Inc.

-20V DUAL P-CHANNEL HEXFET POWER MOSFETIN A MICRO 8 PACKAGE [See More]

  • Polarity: P-Channel
  • PD: 1200
  • rDS(on): 0.0550
  • Package Type: MICRO-8
-12V Pch+Pch Middle Power MOSFET -- QS8J13
from ROHM Semiconductor USA, LLC

The Power MOSFET QS8J13 is suitable for switching power supply. [See More]

  • Polarity: P-Channel
  • IDSS: -5500
  • V(BR)DSS: -12
  • QG: 60
-20V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE -- 70016976 [IRF7104PBF from Infineon Technologies AG]
from Allied Electronics, Inc.

-20V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE [See More]

  • Polarity: P-Channel
  • PD: 2000
  • rDS(on): 0.2500
  • Package Type: SO-8
-30V Pch+Pch Middle Power MOSFET -- TT8J3
from ROHM Semiconductor USA, LLC

TT8J3 is complex type MOSFET(Pch+Pch) for switching application. [See More]

  • Polarity: P-Channel
  • IDSS: -2500
  • V(BR)DSS: -30
  • QG: 4.8
-55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE -- 70016988 [IRF7342PBF from Infineon Technologies AG]
from Allied Electronics, Inc.

-55V DUAL P-CHANNEL HEXFET POWER MOSFETIN A SO-8 PACKAGE [See More]

  • Polarity: P-Channel
  • rDS(on): 0.1050
  • V(BR)DSS: -55
  • PD: 2000
-30V Pch+Pch Middle Power MOSFET -- UT6JA2
from ROHM Semiconductor USA, LLC

UT6JA2 is low on-resistance and small surface mount package MOSFET for switching application. [See More]

  • Polarity: P-Channel
  • IDSS: -4000
  • V(BR)DSS: -30
  • QG: 3.4
25V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE -- 70016977 [IRF7105PBF from Infineon Technologies AG]
from Allied Electronics, Inc.

25V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE [See More]

  • Polarity: N-Channel; P-Channel
  • Package Type: SO-8
-30V Pch+Pch Power MOSFET -- SH8J66
from ROHM Semiconductor USA, LLC

Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

  • Polarity: P-Channel
  • IDSS: 9000
  • V(BR)DSS: -30
  • QG: 35
55V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE -- 70017581 [IRF7343PBF from Infineon Technologies AG]
from Allied Electronics, Inc.

55V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE [See More]

  • Polarity: N-Channel; P-Channel
  • Package Type: SO-8
Pch -30V -4A Power MOSFET -- RRR040P03FRA
from ROHM Semiconductor USA, LLC

RRR040P03FRA is the high reliability Automotive MOSFET, suitable for the DC/DC converter. [See More]

  • Polarity: P-Channel
  • IDSS: -4000
  • V(BR)DSS: -30
  • QG: 10.5
Pwr MOSFET, 30V Dual N-and-P-Ch. HEXFET; SO-8 -- 70017548 [IRF7389PBF from Infineon Technologies AG]
from Allied Electronics, Inc.

Pwr MOSFET, 30V Dual N-and-P-Ch. HEXFET; SO-8 [See More]

  • Polarity: N-Channel; P-Channel
  • Package Type: SO-8
Pch -100V -1.5A Power MOSFET -- RQ6P015SP
from ROHM Semiconductor USA, LLC

Small surface mount package RQ6P015SP is suitable for DC/DC converters. [See More]

  • Polarity: P-Channel
  • IDSS: -1500
  • V(BR)DSS: -100
  • QG: 17
Pch -100V -13A Power MOSFET -- RSD131P10
from ROHM Semiconductor USA, LLC

RSD131P10 is a Power MOSFET with Low on-resistance and Fast switching speed, suitable for switching. [See More]

  • Polarity: P-Channel
  • IDSS: -13000
  • V(BR)DSS: -100
  • QG: 40
Pch -20V -10A Middle Power MOSFET -- RF4C050AP
from ROHM Semiconductor USA, LLC

The high power small mold package RF4C050AP is suitable for switching and load switch. [See More]

  • Polarity: P-Channel
  • IDSS: -10000
  • V(BR)DSS: -20
  • QG: 55
Pch -20V -30A Middle Power MOSFET -- RQ3C150BC
from ROHM Semiconductor USA, LLC

The Middle Power MOSFET RQ3C150BC is suitable for switching and load switch. [See More]

  • Polarity: P-Channel
  • IDSS: -30000
  • V(BR)DSS: -20
  • QG: 60
Pch -20V -5.5A Middle Power MOSFET -- RF6C055BC
from ROHM Semiconductor USA, LLC

RF6C055BC is Low on-resistance and high power small mold package MOSFET for switching. [See More]

  • Polarity: P-Channel
  • IDSS: -5500
  • V(BR)DSS: -20
  • QG: 15.2