TO-263 Power MOSFET

Win Source Part Number: 1013963-HUF76645S3ST. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: UltraFET ®. Package: Bulk. Standard Package: 1. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss):... [See More]

• Package Type: TO-263; SOT3
• Q_G: 153

• Polarity: N-Channel
• P_D: 310000

Power Field-Effect Transistor [See More]

• Package Type: TO-263; TO-263-3

• Packing Method: Tape Reel; Tape & Reel

Infineon ’s 600V CoolMOS ™ CFD7 Superjunction MOSFET IPB60R040CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0400

Win Source Part Number: 1061186-NTBGS2D5N06C. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tape & Reel. Standard Package: 800. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 60 V. Current... [See More]

• Package Type: TO-263; SOT3
• Q_G: 45.4

• Polarity: N-Channel
• P_D: 3700 to 136000

20A, 40V, N-Channel Power MOSFET, TO-263AA [See More]

• Package Type: TO-263; TO-263AA

• Polarity: N-Channel

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0450

Win Source Part Number: 1063693-HUF76132S3S. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: UltraFET ™. Package: Bulk. Standard Package: 1. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss):... [See More]

• Package Type: TO-263; SOT3
• Q_G: 52

• Polarity: N-Channel
• P_D: 120000

Power Field-Effect Transistor, 120A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB [See More]

• Package Type: TO-263; TO-263-3
• r_DS(on): 0.0018

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0600

Win Source Part Number: 1063697-HUF76443S3ST. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: UltraFET ®. Package: Bulk. Standard Package: 800. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss):... [See More]

• Package Type: TO-263; SOT3
• Q_G: 129

• Polarity: N-Channel
• P_D: 260000

12V-300V N-Channel Power MOSFET [See More]

• Package Type: TO-263; TO-263-7
• Packing Method: Tape Reel; Tape & Reel

• Polarity: N-Channel

Infineons CoolMOS ™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS ™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.1600

Win Source Part Number: 1116263-NTBGS1D5N06C. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tape & Reel. Standard Package: 800. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 60 V. Current... [See More]

• Package Type: TO-263; SOT3
• Q_G: 78.6

• Polarity: N-Channel
• P_D: 3700 to 211000

The 650V CoolMOS ™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. Infineon ’s 650V CoolMOS ™ CFD7 superjunction MOSFET IPB65R041CFD7 in a D2PAK package is ideally suited for resonant topologies in industrial... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0410

Manufacturer: onsemi. Win Source Part Number: 1324087-NVB110N65S3F. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Packaging: Bulk. Standard Package: 1. Mounting: Surface Mount. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage... [See More]

• Package Type: TO-263; SOT3; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
• Q_G: 58

• Polarity: N-Channel
• P_D: 240000

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0450

Win Source Part Number: 965307-HUF76121S3ST. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: UltraFET ™. Package: Bulk. Standard Package: 800. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss):... [See More]

• Package Type: TO-263; SOT3
• Q_G: 30

• Polarity: N-Channel
• P_D: 75000

OptiMOS ™ 5 60V is optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers and desktops and tablet charger. In addition these devices are a perfect choice for a broad range of industrial applications including motor control, solar micro... [See More]

• Package Type: TO-263; PG-TO263-7
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 1.00E-3

Win Source Part Number: 1352465-NTBGS004N10G. Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs. Temperature Range - Operating: -55 °C ~ 175 °C (TJ). Fake Threat In the Open Market: 42 pct. MSL Level: 1 (Unlimited). Mfr: onsemi. Package: Tape... [See More]

• Package Type: TO-263; SOT3
• Q_G: 178

• Polarity: N-Channel
• P_D: 3700 to 340000

Combining a low RDS(on) with a wide safe operating area (SOA). OptiMOS ™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the... [See More]

• Package Type: TO-263; PG-TO263-7
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0017

Manufacturer: Vishay. Win Source Part Number: 1187059-IRF540STRLPBF. Packaging: Reel - TR. Operating Temperature Range: -55 °C ~ 175 °C (TJ). Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB. Mounting: SMD. Technology: MOSFET. Current - Continuous Drain (Id) @ 25 °C: 28A (Tc). [See More]

• Package Type: TO-263; SOT3
• P_D: 3700 to 150000

• Q_G: 72
• T_J: -55 to 175

Combining a low RDS(on) with a wide safe operating area (SOA). OptiMOS ™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0020

Manufacturer: Infineon Technologies. Win Source Part Number: 1187102-IRF630NSPBF. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-263; SOT3
• V_(BR)DSS: 200

• Polarity: N-Channel; N-Channel
• Q_G: 35

40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package [See More]

• Package Type: TO-263; D2PAK
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0040

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187104-IRF630STRR. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK (TO-263). Drive Voltage (Max Rds On, Min Rds On):... [See More]

• Package Type: TO-263; SOT3
• V_(BR)DSS: 200

• Polarity: N-Channel; N-Channel
• Q_G: 43

40V Single N-Channel HEXFET Power MOSFET in a 7-pin D2Pak package. Applications. Automotive telematics control unit (TCU). Fuel-cell control unit (FCCU). Light electric vehicles (LEV). Benefits. Optimized for broadest availability from distribution partners. Product qualification according to JEDEC... [See More]

• Package Type: TO-263; D2PAK7P
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 7.50E-4

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187404-IRF840ASTRL. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-263; SOT3
• V_(BR)DSS: 500

• Polarity: N-Channel; N-Channel
• Q_G: 38

40 V Logic Level StrongIRFET ™ power MOSFET in D2PAK 7pin. The StrongIRFET ™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a... [See More]

• Package Type: TO-263; D2PAK7P
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 6.50E-4

Manufacturer: Vishay. Win Source Part Number: 1187405-IRF840ASTRLPBF. Packaging: Reel - TR. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB. Mounting: SMD. Technology: MOSFET. Current - Continuous Drain (Id) @ 25 °C: 8A (Tc). [See More]

• Package Type: TO-263; SOT3
• P_D: 3100 to 125000

• Q_G: 38
• T_J: -55 to 150

950 V CoolMOS ™ PFD7 superjunction MOSFET in D2PAK package. The 950 V CoolMOS ™ PFD7 superjunction MOSFET (IPB95R130PFD7) complements the CoolMOS ™ 7 offering for high power lighting and industrial SMPS applications. The IPB95R130PFD7 in the TO-220-3 package features RDS(on) of 130... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.1300

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187442-IRF9530STRLPBF. Packaging: Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-263; SOT3
• V_(BR)DSS: 100

• Polarity: P-Channel; P-Channel
• Q_G: 38

950 V CoolMOS ™ PFD7 superjunction MOSFET in TO-263 package. The 950 V CoolMOS ™ PFD7 superjunction MOSFET (IPB95R310PFD7) complements the CoolMOS ™ 7 offering for high power lighting and industrial SMPS applications. The IPB95R310PFD7 in the TO-263 package features RDS(on) of 310... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.3100

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187483-IRF9Z34STRL. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-263; SOT3
• V_(BR)DSS: 60

• Polarity: P-Channel; P-Channel
• Q_G: 34

StrongIRFET ™ 2 single N-channel power MOSFET 40 V in D ²PAK package. Infineon's StrongIRFET ™ 2 power MOSFET 40 V features low RDS(on) of 1.25 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features. Broad availability from... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0013

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187541-IRFBC40STRL. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-263; SOT3
• V_(BR)DSS: 600

• Polarity: N-Channel; N-Channel
• Q_G: 60

OptiMOS ™ 5 single N-channel Linear FET 2 100 V, 2,1 m Ω, 176 A in D ²PAK 3-pin. The OptiMOS ™ 5 Linear FET 2 technology enables best-in-class trade-off between on-state resistance and linear mode capability. Combined with the D2PAK 3-pin package, IPB021N10NM5LF2 is designed... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0021

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187548-IRFBF20STRL. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-263; SOT3
• V_(BR)DSS: 900

• Polarity: N-Channel; N-Channel
• Q_G: 38

OptiMOS ™ 6 power MOSFET 150 V normal level in D ²PAK 3-pin package. IPB029N15NM6 OptiMOS ™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market. OptiMOS ™ 6 150 V technology was designed to fulfill the requirements of both... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0029

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187549-IRFBF20STRRPBF. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-263; SOT3
• V_(BR)DSS: 900

• Polarity: N-Channel; N-Channel
• Q_G: 38

StrongIRFET ™ 2 single N-channel power MOSFET 100 V in D ²PAK package. Infineon's StrongIRFET ™ 2 power MOSFET 100 V features low RDS(on) of 3.5 mOhm, addressing a broad range of applications from low- to high-switching frequency. Additonally it is intended as the better price... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0035

Manufacturer: Infineon Technologies. Win Source Part Number: 1188527-IRL7833S. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Family Name: IRL7833S. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK. Drive Voltage (Max Rds On, Min... [See More]

• Package Type: TO-263; SOT3
• V_(BR)DSS: 30

• Polarity: N-Channel; N-Channel
• Q_G: 47

IPB038N15NM6 OptiMOS ™ 6 150 V in normal level is setting a new level of performance within the highly competitive 150 V market. OptiMOS ™ 6 150 V technology was designed to fulfill the requirements of both high and low switching frequency applications, in hard and soft switching. [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0038

Manufacturer: STMicroelectronics. Win Source Part Number: 1260673-STB60NF06LT4. Series: STripFET II. Packaging: Reel - TR. Operating Temperature Range: -65 °C ~ 175 °C (TJ). Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB. Mounting: SMD. Technology: MOSFET. Current - Continuous Drain... [See More]

• Package Type: TO-220; TO-263; SOT3
• P_D: 110000

• Q_G: 66
• T_J: -65 to 175

OptiMOS ™ 6 power MOSFET 200 V normal level in D ²PAK 3-pin package. IPB068N20NM6 OptiMOS ™ 6 200 V is setting the new technology standard. It addresses the need for high power density, high efficiency, and high reliability. The OptiMOS ™ 6 200 V technology was designed for... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0068

Manufacturer: Infineon Technologies. Win Source Part Number: 737055-AUIRFS8409-7P. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK (7-Lead). Drive Voltage (Max Rds On, Min Rds On):... [See More]

• Package Type: TO-263; SOT3
• V_(BR)DSS: 40

• Polarity: N-Channel; N-Channel
• Q_G: 460

OptiMOS ™ 6 power MOSFET 200 V normal level in D ²PAK 3-pin package. IPB095N20NM6 leverages the advanced cell design of the OptiMOS ™ 6 200 V technology to provide suitable alternative to legacy OptiMOS ™ 3 and OptiMOS ™ FD products. The OptiMOS ™ 6 200 V... [See More]

• Package Type: TO-263; PG-TO263-3
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0095

Manufacturer: Texas Instruments. Win Source Part Number: 810611-CSD18535KTT. Packaging: Reel. Mounting Style: SMD. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 60V. Supplier Device Package: DDPAK/TO-263-3. Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V. [See More]

• Package Type: TO-263; SOT3
• Q_G: 81

• Polarity: N-Channel
• P_D: 300000

StrongIRFET ™ 2 single N-channel power MOSFET 40 V in D ²PAK 7-pin package. Infineon's StrongIRFET ™ 2 power MOSFET 40 V features lowest RDS(on) of 0.9 mOhm, addressing a broad range of applications from low- to high-switching frequency. Summary of Features. Broad availability from... [See More]

• Package Type: TO-263; PG-TO263-7
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 9.00E-4

Manufacturer: ON Semiconductor. Win Source Part Number: 1182435-HUF75345S3S. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK (TO-263AB). Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-263; SOT3
• V_(BR)DSS: 55

• Polarity: N-Channel; N-Channel
• Q_G: 275

OptiMOS ™ 5 single N-channel Linear FET 2 100 V, 1,8 m Ω, 259 A in D ²PAK 7-pin. The OptiMOS ™ 5 Linear FET 2 technology enables best-in-class trade-off between on-state resistance and linear mode capability. Combined with the D2PAK 7-pin package, IPF018N10NM5LF2 is designed... [See More]

• Package Type: TO-263; PG-TO263-7
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0018

Manufacturer: ON Semiconductor. Win Source Part Number: 1182437-HUF75545S3S. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK (TO-263AB). Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-263; SOT3
• V_(BR)DSS: 80

• Polarity: N-Channel; N-Channel
• Q_G: 235

OptiMOS ™ 6 power MOSFET 135 V Normal Level in D ²PAK 7-pin. This product effectively bridges the gap between the 120 V and 150 V MOSFETs. In D ²PAK 7-pin OptiMOS ™ 6 135 V achieves ~53% improvements in on-state resistance (RDS(on)) and ~38% lower gate threshold voltage spread... [See More]

• Package Type: TO-263; PG-TO263-7
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0021

Manufacturer: ON Semiconductor. Win Source Part Number: 1182439-HUF75637S3S. Packaging: Tube. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK (TO-263AB). Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Package Type: TO-263; SOT3
• V_(BR)DSS: 100

• Polarity: N-Channel; N-Channel
• Q_G: 108

RCJ451N20 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application. [See More]

• Package Type: TO-263; TO-263S (D2PAK)
• V_(BR)DSS: 200

• Polarity: N-Channel
• I_DSS: 45000

RJ1P12BBD is a Power MOSFET with Low on - resistance, suitable for Switching. [See More]

• Package Type: TO-263; TO-263AB (LPTL)
• V_(BR)DSS: 100

• Polarity: N-Channel
• I_DSS: 120000