Tape Reel Power MOSFET

92 Results
-12V Pch+Pch Middle Power MOSFET -- QS8J13
from ROHM Semiconductor GmbH

The Power MOSFET QS8J13 is suitable for switching power supply. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: -12
  • Polarity: P-Channel
  • IDSS: -5500
2PD2150,115 [2PD2150,115 from Nexperia B.V.]
from Rochester Electronics

Nexperia 2PD2150 - Power Bipolar Transistor, MPT3 [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT89; SOT-89
N Ch Power Mosfet, Stripfet, 200V, 30A, D2Pak, Full Reel; Transistor Polarity Stmicroelectronics -- 57P0602 [STB30NF20 from STMicroelectronics, Inc.]
from Newark, An Avnet Company

N CH POWER MOSFET, STripFET, 200V, 30A, D2PAK, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:30A; On Resistance Rds(on):0.065ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes [See More]

  • Packing Method: Tape Reel
  • rDS(on): 0.0650
  • Transistor Type: N Ch Power Mosfet, Stripfet, 200V, 30A, D2Pak, Full Reel; Transistor Polarity Stmicroelectronics
  • IDSS: 30000
-20V Pch+Pch Power MOSFET -- UT6J3
from ROHM Semiconductor GmbH

The UT6J3 is a Small Surface Mount Package MOSFET for switching application. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: -20
  • Polarity: P-Channel
  • IDSS: -3000
2SA1460-T-AZ [2SA1460-T-AZ from Renesas Electronics Corporation]
from Rochester Electronics

2SA1460 - Power Bipolar Transistor, PNP [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: TO-220; TO-220FM
N Ch Power Mosfet, Stripfet, 200V, 5A, Dpak, Full Reel; Transistor Polarity Stmicroelectronics -- 57P0799 [STD5N20LT4 from STMicroelectronics, Inc.]
from Newark, An Avnet Company

N CH POWER MOSFET, STripFET, 200V, 5A, DPAK, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:5A; On Resistance Rds(on):0.65ohm; Transistor Mounting:Surface Mount; No. of Pins:2PinsRoHS Compliant: Yes [See More]

  • Packing Method: Tape Reel
  • rDS(on): 0.6500
  • Transistor Type: N Ch Power Mosfet, Stripfet, 200V, 5A, Dpak, Full Reel; Transistor Polarity Stmicroelectronics
  • IDSS: 5000
-30V Pch+Pch Power MOSFET -- SH8J66
from ROHM Semiconductor GmbH

Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: -30
  • Polarity: P-Channel
  • IDSS: -9000
2SB1578(0)-T1-AY [2SB1578(0)-T1-AY from Renesas Electronics Corporation]
from Rochester Electronics

2SB1578 - Power Bipolar Transistor, 5A, 60V, PNP [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: TO-220; TO-220-3
N Channel Power Mosfet, 30V, 171A, So-8Fl; Transistor Polarity On Semiconductor -- 73R4092 [NTMFS4897NFT1G from onsemi]
from Newark, An Avnet Company

N CHANNEL POWER MOSFET, 30V, 171A, SO-8FL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:171A; On Resistance Rds(on):0.0013ohm; Transistor Mounting:Surface Mount; Threshold Voltage Vgs:2V RoHS Compliant: Yes [See More]

  • Packing Method: Tape Reel
  • Polarity: N-Channel
  • Transistor Type: N Channel Power Mosfet, 30V, 171A, So-8Fl; Transistor Polarity On Semiconductor
  • rDS(on): 0.0013
100V Nch+Pch Power MOSFET -- HP8M51
from ROHM Semiconductor GmbH

HP8M51TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for switching application. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 100
  • Polarity: N-Channel; P-Channel
  • IDSS: 4500
2SC3365-E [2SC3365-E from Renesas Electronics Corporation]
from Rochester Electronics

2SC3365 - Power Bipolar Transistor, 10A, 400V, NPN [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: TO-218
N Channel Power Mosfet, Hexfet, 30V, 27A, Pqfn-8; Transistor Polarity Infineon -- 40T7419 [IRFH8318TR2PBF from Infineon Technologies AG]
from Newark, An Avnet Company

N CHANNEL POWER MOSFET, HEXFET, 30V, 27A, PQFN-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:27A; On Resistance Rds(on):0.0025ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes [See More]

  • Packing Method: Tape Reel
  • Polarity: N-Channel
  • Transistor Type: N Channel Power Mosfet, Hexfet, 30V, 27A, Pqfn-8; Transistor Polarity Infineon
  • rDS(on): 0.0025
20V 1A Nch Power MOSFET -- RV2C010UN
from ROHM Semiconductor GmbH

The ultra-small package(1006size) RV2C010UN is suitable for portable devices. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 20
  • Polarity: N-Channel
  • IDSS: 1000
2SC4003E-TL-E [2SC4003E-TL-E from onsemi]
from Rochester Electronics

2SC4003 - NPN Power Transistor [See More]

  • Packing Method: Tape Reel; Tape & Reel
N Channel Power Mosfet, Hexfet, 60V, 270A, D2Pak; Transistor Polarity Infineon -- 39T2139 [IRLS3036TRLPBF from Infineon Technologies AG]
from Newark, An Avnet Company

N CHANNEL POWER MOSFET, HEXFET, 60V, 270A, D2PAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:270A; On Resistance Rds(on):0.0019ohm; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes [See More]

  • Packing Method: Tape Reel
  • Polarity: N-Channel
  • Transistor Type: N Channel Power Mosfet, Hexfet, 60V, 270A, D2Pak; Transistor Polarity Infineon
  • rDS(on): 0.0019
250V 33A TO-263, Automotive Power MOSFET -- RJ1U330AAFRG
from ROHM Semiconductor GmbH

RJ1U330AAFRG is the high reliability automotive MOSFET, suitable for switching power supply. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 250
  • Polarity: N-Channel
  • IDSS: 33000
2SC5292(0)-T-AZ [2SC5292(0)-T-AZ from Renesas Electronics Corporation]
from Rochester Electronics

2SC5292 - Bipolar Power Transistors [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: MP10
N Channel Power Mosfet, Nexfet, 25V, 100A, Son-8; Transistor Polarity Texas Instruments -- 34T4848 [CSD16321Q5 from Texas Instruments Standard Linear and Logic]
from Newark, An Avnet Company

N CHANNEL POWER MOSFET, NEXFET, 25V, 100A, SON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:100A; On Resistance Rds(on):0.0019ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes [See More]

  • Packing Method: Tape Reel
  • Polarity: N-Channel
  • Transistor Type: N Channel Power Mosfet, Nexfet, 25V, 100A, Son-8; Transistor Polarity Texas Instruments
  • rDS(on): 0.0019
250V 4A TO-252, Automotive Power MOSFET -- RD3U041AAFRA
from ROHM Semiconductor GmbH

RD3U041AAFRA is an automotive grade MOSFET that is AEC-Q101 qualified, and suitable for switching applications. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 250
  • Polarity: N-Channel
  • IDSS: 4000
2SD1163A-E [2SD1163A-E from Renesas Electronics Corporation]
from Rochester Electronics

2SD1163 - Power Bipolar Transistor, 7A, 150V, NPN [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: CAN3/4
N Channel Power Mosfet, Stripfet, 24V, 280A, Powerso-10, Full Reel; Transistor Polarity Stmicroelectronics -- 57P2576 [STV300NH02L from STMicroelectronics, Inc.]
from Newark, An Avnet Company

N CHANNEL POWER MOSFET, STripFET, 24V, 280A, POWERSO-10, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:24V; Continuous Drain Current Id:280A; On Resistance Rds(on):800 µohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes [See More]

  • Packing Method: Tape Reel
  • Polarity: N-Channel
  • Transistor Type: N Channel Power Mosfet, Stripfet, 24V, 280A, Powerso-10, Full Reel; Transistor Polarity Stmicroelectronics
  • rDS(on): 8.00E-4
30V Dual Common Drain Pch+Nch Power MOSFET -- HS8MA2
from ROHM Semiconductor GmbH

Two MOSFETs of 30V Pch and Nch (common drain configuration) are built in a symmetric dual package. Ideal for switching and motor drive applications. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 30
  • Polarity: N-Channel; P-Channel
  • IDSS: 7000
2SD1616A-T-AZ [2SD1616A-T-AZ from Renesas Electronics Corporation]
from Rochester Electronics

2SD1616 - NPN Epitaxial Transistor for Low-Frequency Power Amplifier [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: TO-92; TO-92
P Channel Power Mosfet, Hexfet, -20V, -2.6A, Sot-23; Transistor Polarity Infineon -- 40T7450 [IRLML2246TRPBF from Infineon Technologies AG]
from Newark, An Avnet Company

P CHANNEL POWER MOSFET, HEXFET, -20V, -2.6A, SOT-23; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.6A; On Resistance Rds(on):0.09ohm; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes [See More]

  • Packing Method: Tape Reel
  • Polarity: P-Channel
  • Transistor Type: P Channel Power Mosfet, Hexfet, -20V, -2.6A, Sot-23; Transistor Polarity Infineon
  • rDS(on): 0.0900
30V Nch+Nch Middle Power MOSFET -- HP8K22
from ROHM Semiconductor GmbH

HP8K22 is low on-resistance MOSFET for DC/DC converter. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 30
  • Polarity: N-Channel
  • IDSS: 27000
2SJ133-Z-E1-AZ [2SJ133-Z-E1-AZ from Renesas Electronics Corporation]
from Rochester Electronics

2SJ133 - Power Field-Effect Transistor [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: TO-252 (DPAK); TO-252-3
Power Mosfet 80V Single N Channel Rohs Compliant On Semiconductor -- 39AH8825 [FDMS4D5N08LC from onsemi]
from Newark, An Avnet Company

POWER MOSFET 80V SINGLE N CHANNEL ROHS COMPLIANT: YES [See More]

  • Packing Method: Tape Reel
  • Package Type: TO-3
  • Polarity: N-Channel
30V Nch+Nch Power MOSFET -- HS8K1
from ROHM Semiconductor GmbH

HS8K1 is standard MOSFET for switching application. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 30
  • Polarity: N-Channel
  • IDSS: 10000
2SK2570ZL-TL-E [2SK2570ZL-TL-E from Renesas Electronics Corporation]
from Rochester Electronics

2SK2570 - Power Field-Effect Transistor, 0.2A, 20V, N-Channel MOSFET [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: CPH3
  • Polarity: N-Channel
Power Mosfet, N Channel, 1 A, 800 V, 15.5 Ohm, 10 V, 5 V Rohs Compliant On Semiconductor -- 31Y1519 [FQD1N80TM from onsemi]
from Newark, An Avnet Company

Power MOSFET, N Channel, 1 A, 800 V, 15.5 ohm, 10 V, 5 V RoHS Compliant: Yes [See More]

  • Packing Method: Tape Reel
  • Package Type: TO-3
  • Polarity: N-Channel
5.5 V, 2 A Pch/Nch Power MOSFET with Drivers For Automotive -- BD90302NUF-C
from ROHM Semiconductor GmbH

BD90302NUF-C are boost MOSFET with drivers for BD8Pxxx Series exclusive use. BD8Pxxx Series is a buck DC/DC Converter with boost function. When used with BD8Pxxx Series, a synchronous buck-boost DC/DC Converter is constituted. [See More]

  • Packing Method: Tape Reel
  • Package Type: VSON10FV3030 (Wettable Flank)
  • TJ: -55 to 150
  • Transistor Grade / Operating Range: Commercial
2SK3816-DL-1E [2SK3816-DL-1E from onsemi]
from Rochester Electronics

2SK3816 - Power Field-Effect Transistor, N-Channel, MOSFET [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SC-88/SC70-6/SOT-363 6
  • Polarity: N-Channel
Power Mosfet, N Channel, 10A, To-252-3; Transistor Polarity Stmicroelectronics -- 14AC7523 [STD11N60DM2 from STMicroelectronics, Inc.]
from Newark, An Avnet Company

POWER MOSFET, N CHANNEL, 10A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.37ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes [See More]

  • Packing Method: Tape Reel
  • Polarity: N-Channel
  • Transistor Type: Power Mosfet, N Channel, 10A, To-252-3; Transistor Polarity Stmicroelectronics
  • rDS(on): 0.3700
600V 2A TO-252, Low-noise Power MOSFET -- R6002END3
from ROHM Semiconductor GmbH

R6002END3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 600
  • Polarity: N-Channel
  • IDSS: 2000
2SK4065-DL-1E [2SK4065-DL-1E from onsemi]
from Rochester Electronics

2SK4065 - N-Channel Power MOSFET, 75V, 100A, TO-263-2L [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: D2PAK
  • Polarity: N-Channel
Power Mosfet, N Channel, 120 Ma, 600 V, 25 Ohm, 10 V, -1.4 V Rohs Compliant Infineon -- 50Y1824 [BSP135H6327XTSA1 from Infineon Technologies AG]
from Newark, An Avnet Company

Power MOSFET, N Channel, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V RoHS Compliant: Yes [See More]

  • Packing Method: Tape Reel
  • Package Type: TO-3
  • Polarity: N-Channel
Nch 100V 120A Power MOSFET -- RJ1P12BBD
from ROHM Semiconductor GmbH

RJ1P12BBD is a Power MOSFET with Low on - resistance, suitable for Switching. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 100
  • Polarity: N-Channel
  • IDSS: 120000
74AUP1Z04GS,132 [74AUP1Z04GS,132 from Nexperia B.V.]
from Rochester Electronics

74AUP1Z04 - Low-power X-tal driver with enable and internal transistor [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: X2SON6
Power Mosfet, N Channel, 16.4 A, 650 V, 0.18 Ohm, 10 V, 3 V Rohs Compliant Infineon -- 47Y8052 [IPL60R199CPAUMA1 from Infineon Technologies AG]
from Newark, An Avnet Company

Power MOSFET, N Channel, 16.4 A, 650 V, 0.18 ohm, 10 V, 3 V RoHS Compliant: Yes [See More]

  • Packing Method: Tape Reel
  • Package Type: TO-3
  • Polarity: N-Channel
Nch 100V 39A, HSMT8, Power MOSFET -- RQ3P300BH
from ROHM Semiconductor GmbH

RQ3P300BH is a power MOSFET with low on - resistance, suitable for switching. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 100
  • Polarity: N-Channel
  • IDSS: 39000
A2I25D025NR1 [A2I25D025NR1 from NXP Semiconductors]
from Rochester Electronics

A2I25D025N - Airfast RF Power LDMOS Transistor, 2300-2690 MHz [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: FM17F
Power Mosfet, N Channel, 20A, To-263-3; Transistor Polarity Stmicroelectronics -- 14AC7520 [STB20N90K5 from STMicroelectronics, Inc.]
from Newark, An Avnet Company

POWER MOSFET, N CHANNEL, 20A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.21ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes [See More]

  • Packing Method: Tape Reel
  • Polarity: N-Channel
  • Transistor Type: Power Mosfet, N Channel, 20A, To-263-3; Transistor Polarity Stmicroelectronics
  • rDS(on): 0.2100
Nch 100V 60A Power MOSFET -- RS1P600BE
from ROHM Semiconductor GmbH

RS1P600BE is a power MOSFET with low on - resistance, suitable for DC/DC converters. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 100
  • Polarity: N-Channel
  • IDSS: 60000
BC52-10PASX [BC52-10PASX from NXP Semiconductors]
from Rochester Electronics

Nexperia BC52PAS - 60V, 1 A PNP medium power transistors [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: HUSON3
Power Mosfet, N Channel, 22.5A, Pwrflat; Transistor Polarity Stmicroelectronics -- 14AC7550 [STL36N55M5 from STMicroelectronics, Inc.]
from Newark, An Avnet Company

POWER MOSFET, N CHANNEL, 22.5A, PWRFLAT; Transistor Polarity:N Channel; Continuous Drain Current Id:22.5A; Drain Source Voltage Vds:550V; On Resistance Rds(on):0.066ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes [See More]

  • Packing Method: Tape Reel
  • Polarity: N-Channel
  • Transistor Type: Power Mosfet, N Channel, 22.5A, Pwrflat; Transistor Polarity Stmicroelectronics
  • rDS(on): 0.0660
Nch 20V 2.5A Middle Power MOSFET -- RUF025N02FRA
from ROHM Semiconductor GmbH

RUF025N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 20
  • Polarity: N-Channel
  • IDSS: 2500
BC869,135 [BC869,135 from Nexperia B.V.]
from Rochester Electronics

BC869 - PNP medium power transistor [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT89
Power Mosfet, N Channel, 33 A, 600 V, 0.083 Ohm, 10 V, 2 V Rohs Compliant Vishay -- 19X1931 [SIHB33N60E-GE3 from Vishay Precision Group]
from Newark, An Avnet Company

Power MOSFET, N Channel, 33 A, 600 V, 0.083 ohm, 10 V, 2 V RoHS Compliant: Yes [See More]

  • Packing Method: Tape Reel
  • Package Type: TO-3
  • Polarity: N-Channel
Nch 20V 3.5A Power MOSFET -- RUL035N02FRA
from ROHM Semiconductor GmbH

RUL035N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 20
  • Polarity: N-Channel
  • IDSS: 3500
BCP51-10TF [BCP51-10TF from Nexperia B.V.]
from Rochester Electronics

BCP51-10T - 45 V, 1 A PNP medium power transistors [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT223
Power Mosfet, N Channel, 4 A, 650 V, 1.2 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics -- 40Y2593 [STB6N65M2 from STMicroelectronics, Inc.]
from Newark, An Avnet Company

Power MOSFET, N Channel, 4 A, 650 V, 1.2 ohm, 10 V, 3 V RoHS Compliant: Yes [See More]

  • Packing Method: Tape Reel
  • Package Type: TO-3
  • Polarity: N-Channel
Nch 30V 10A Middle Power MOSFET -- RF4E100AJ
from ROHM Semiconductor GmbH

RF4E100AJ is high power small mold package(HUML2020L8) MOSFET for switching and DC/DC converter, battery switch application. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 30
  • Polarity: N-Channel
  • IDSS: 10000
BCP52-10,135 [BCP52-10,135 from Nexperia B.V.]
from Rochester Electronics

BCP52-10 - 60V, 1A PNP medium power transistor [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT223; SOT-223-3
Power Mosfet, N Channel, 40V, 20A, Dfn5; Transistor Polarity On Semiconductor -- 52T8335 [NTMFS5832NLT1G from onsemi]
from Newark, An Avnet Company

POWER MOSFET, N CHANNEL, 40V, 20A, DFN5; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:20A; On Resistance Rds(on):0.0031ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes [See More]

  • Packing Method: Tape Reel
  • Polarity: N-Channel
  • Transistor Type: Power Mosfet, N Channel, 40V, 20A, Dfn5; Transistor Polarity On Semiconductor
  • rDS(on): 0.0031
Nch 30V 3.5A Middle Power MOSFET -- RQ5E035XN
from ROHM Semiconductor GmbH

RQ5E035XN is a Small Signal MOSFET featuring low-on resistance and Built-in G-S Protection Diode. It is suitable for switching. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 30
  • Polarity: N-Channel
  • IDSS: 3500
BCP53-16HX [BCP53-16HX from Nexperia B.V.]
from Rochester Electronics

BCP53H series - 80V, 1A PNP medium power transistors [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SC-73
Power Mosfet, N Channel, 5 A, 650 V, 0.79 Ohm, 10 V, 3 V Rohs Compliant Stmicroelectronics -- 40Y2597 [STD9N65M2 from STMicroelectronics, Inc.]
from Newark, An Avnet Company

Power MOSFET, N Channel, 5 A, 650 V, 0.79 ohm, 10 V, 3 V RoHS Compliant: Yes [See More]

  • Packing Method: Tape Reel
  • Package Type: TO-3; TO-252 (DPAK)
  • Polarity: N-Channel
Nch 30V 4.5A Power MOSFET -- RQ6E045BN
from ROHM Semiconductor GmbH

Power MOSFET RQ6E045BN is suitable for switching power supply. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 30
  • Polarity: N-Channel
  • IDSS: 4500
BCX56-16,115 [BCX56-16,115 from Nexperia B.V.]
from Rochester Electronics

BCX56-16 - 80V, 1A NPN medium power transistor [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT89; SOT-89
Power Mosfet, N Channel, 6 A, 650 V, 0.594 Ohm, 10 V, 4 V Rohs Compliant Infineon -- 50Y2014 [IPB65R660CFDATMA1 from Infineon Technologies AG]
from Newark, An Avnet Company

Power MOSFET, N Channel, 6 A, 650 V, 0.594 ohm, 10 V, 4 V RoHS Compliant: Yes [See More]

  • Packing Method: Tape Reel
  • Package Type: TO-3
  • Polarity: N-Channel
Nch 30V 4.5A Power MOSFET -- RW4E045AJ
from ROHM Semiconductor GmbH

RW4E045AJ is a MOSFET for DC/DC converters, switching, battery switches. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 30
  • Polarity: N-Channel
  • IDSS: 4500
BLF0910H9LS600J [BLF0910H9LS600J from Ampleon]
from Rochester Electronics

BLF0910H9LS600 - LDMOS Power Transistor [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT502
Power Mosfet, N Channel, 9 A, 650 V, 0.35 Ohm, 10 V, 3 V Rohs Compliant Infineon -- 47Y8053 [IPL60R385CPAUMA1 from Infineon Technologies AG]
from Newark, An Avnet Company

Power MOSFET, N Channel, 9 A, 650 V, 0.35 ohm, 10 V, 3 V RoHS Compliant: Yes [See More]

  • Packing Method: Tape Reel
  • Package Type: TO-3
  • Polarity: N-Channel
Nch 40V 120A Power MOSFET -- RJ1G12BGN
from ROHM Semiconductor GmbH

RJ1G12BGN is a Power MOSFET with Low on - resistance, suitable for Switching. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 40
  • Polarity: N-Channel
  • IDSS: 120000
BLF6G22LS-130,118 [BLF6G22LS-130,118 from Ampleon]
from Rochester Electronics

BLF6G22LS-130 - 130W LDMOS power transistor [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: SOT502B
Power Mosfet, N Channel, 9.2 A, 600 V, 0.41 Ohm, 10 V, 3 V Rohs Compliant Infineon -- 50Y2039 [IPD60R450E6ATMA1 from Infineon Technologies AG]
from Newark, An Avnet Company

Power MOSFET, N Channel, 9.2 A, 600 V, 0.41 ohm, 10 V, 3 V RoHS Compliant: Yes [See More]

  • Packing Method: Tape Reel
  • Package Type: TO-3
  • Polarity: N-Channel
Nch 60V 2A Middle Power MOSFET -- RJP020N06
from ROHM Semiconductor GmbH

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 60
  • Polarity: N-Channel
  • IDSS: 2000
BQ24725RGRR [BQ24725RGRR from Texas Instruments High-Performance Analog]
from Rochester Electronics

BQ24725 2-4 Cell Li+ Battery SMBus Charge Controller with N-Channel Power MOSFET Selector [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: VQFN20
  • Polarity: N-Channel
Power Mosfet, P-Ch, -8V, -5A, Dsbga-9; Transistor Polarity Texas Instruments -- 29AH3848 [CSD22206WT from Texas Instruments Standard Linear and Logic]
from Newark, An Avnet Company

POWER MOSFET, P-CH, -8V, -5A, DSBGA-9; Transistor Polarity:P Channel; Continuous Drain Current Id:-5A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700mV; PowerRoHS Compliant: Yes [See More]

  • Packing Method: Tape Reel
  • rDS(on): 0.0047
  • Transistor Type: Power Mosfet, P-Ch, -8V, -5A, Dsbga-9; Transistor Polarity Texas Instruments
  • IDSS: -5000
Nch+Nch 30V Power MOSFET -- HP8KA1
from ROHM Semiconductor GmbH

The surface mount package HP8KA1 is suitable for Load Switch, LiB charging and discharging switch. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 30
  • Polarity: N-Channel
  • IDSS: 14000
BSC026N02KSG [BSC026N02KSG from Infineon Technologies AG]
from Rochester Electronics

BSC026N02 - 12V-300V N-Channel Power MOSFET [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: TDSON8
  • Polarity: N-Channel
Rf Power Mosfet, Lateral N Channel Broadband, 40V, 12A, To-272-6 Wrap, Full Reel; Drain Source Voltage Vds Nxp -- 29X4275 [MRF1550NT1 from NXP Semiconductors]
from Newark, An Avnet Company

RF POWER MOSFET, LATERAL N CHANNEL BROADBAND, 40V, 12A, TO-272-6 WRAP, FULL REEL; Drain Source Voltage Vds:40V; Continuous Drain Current Id:12A; Power Dissipation Pd:165W; Operating Frequency Min:135MHz; RF Transistor Case:TO-272 RoHS Compliant: Yes [See More]

  • Packing Method: Tape Reel
  • IDSS: 12000
  • Polarity: N-Channel
  • PD: 165000
NPN, DFN2020-3S, 30V 3A, Middle Power Transistor -- 2SCR542F3
from ROHM Semiconductor GmbH

Middle power transistor 2SCR542F3 is suitable for Motor driver and LED driver, Power supply. [See More]

  • Packing Method: Tape Reel
  • IDSS: 3000
  • V(BR)DSS: 30
  • PD: 1000
BSL296SNH6327XTSA1 [BSL296SNH6327XTSA1 from Infineon Technologies AG]
from Rochester Electronics

BSL296 - 250V-600V Small Signal/Small Power MOSFET [See More]

  • Packing Method: Tape Reel; Tape & Reel
  • Package Type: TSOP6
Rf Power Mosfet, Lateral N Channel, 130V 600W, Ni-1230, Full Reel; Drain Source Voltage Vds Nxp -- 29X4271 [MRFE6VP5600HR5 from NXP Semiconductors]
from Newark, An Avnet Company

RF POWER MOSFET, LATERAL N CHANNEL, 130V 600W, NI-1230, FULL REEL; Drain Source Voltage Vds:130V; Continuous Drain Current Id:100mA; Power Dissipation Pd:1.667kW; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; MSL:- RoHS Compliant: Yes [See More]

  • Packing Method: Tape Reel
  • IDSS: 100
  • Polarity: N-Channel
  • PD: 1.67E6
-12V Pch+Pch Middle Power MOSFET -- QS8J13
from ROHM Semiconductor USA, LLC

The Power MOSFET QS8J13 is suitable for switching power supply. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: -12
  • Polarity: P-Channel
  • IDSS: -5500
-30V Pch+Pch Middle Power MOSFET -- TT8J3
from ROHM Semiconductor USA, LLC

TT8J3 is complex type MOSFET(Pch+Pch) for switching application. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: -30
  • Polarity: P-Channel
  • IDSS: -2500
-30V Pch+Pch Middle Power MOSFET -- UT6JA2
from ROHM Semiconductor USA, LLC

UT6JA2 is low on-resistance and small surface mount package MOSFET for switching application. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: -30
  • Polarity: P-Channel
  • IDSS: -4000
-30V Pch+Pch Power MOSFET -- SH8J66
from ROHM Semiconductor USA, LLC

Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: -30
  • Polarity: P-Channel
  • IDSS: 9000
-60V 3A Power Transistor -- 2SA2071P5
from ROHM Semiconductor USA, LLC

2SA2071P5 is a power transistor for high speed switching. [See More]

  • Packing Method: Tape Reel
  • TJ: -55 to 150
  • PD: 500
  • Package Type: SOT89; SOT-89
10V Drive Nch Power MOSFET -- RCD041N25
from ROHM Semiconductor USA, LLC

Transistor [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 250
  • Polarity: N-Channel
  • IDSS: 4000
10V Drive Nch Power MOSFET -- RCJ050N25
from ROHM Semiconductor USA, LLC

Transistor [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 250
  • Polarity: N-Channel
  • IDSS: 5000
Nch 20V 2.5A Middle Power MOSFET -- RUF025N02FRA
from ROHM Semiconductor USA, LLC

RUF025N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 20
  • Polarity: N-Channel
  • IDSS: 2500
Nch 20V 3.5A Power MOSFET -- RUL035N02FRA
from ROHM Semiconductor USA, LLC

RUL035N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 20
  • Polarity: N-Channel
  • IDSS: 3500
Nch 30V 10A Middle Power MOSFET -- RF4E100AJ
from ROHM Semiconductor USA, LLC

RF4E100AJ is high power small mold package(HUML2020L8) MOSFET for switching and DC/DC converter, battery switch application. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 30
  • Polarity: N-Channel
  • IDSS: 10000
Nch 30V 10A Middle Power MOSFET -- RQ3E100BN
from ROHM Semiconductor USA, LLC

RQ3E100BN is high power package(HSMT8) MOSFET for switching. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 30
  • Polarity: N-Channel
  • IDSS: 13500
Nch 30V 3.5A Power MOSET -- RQ5E035BN
from ROHM Semiconductor USA, LLC

The small surface mount package RQ5E035BN is suitable for switching. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 30
  • Polarity: N-Channel
  • IDSS: 3500
Nch 30V 4.5A Power MOSFET -- RQ6E045BN
from ROHM Semiconductor USA, LLC

Power MOSFET RQ6E045BN is suitable for switching power supply. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 30
  • Polarity: N-Channel
  • IDSS: 4500
Nch 500V 7A Power MOSFET -- R5007FNX
from ROHM Semiconductor USA, LLC

R5007FNX is Power MOSFET for Switching Power Supply. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 500
  • Polarity: N-Channel
  • IDSS: 7000
Nch 600V 10A Power MOSFET -- R6010MND3
from ROHM Semiconductor USA, LLC

R6010MND3 is fast trr power MOSFET, suitable for switching power supply. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 600
  • Polarity: N-Channel
  • IDSS: 10000
NPN 3.0A 30V Middle Power Transistor -- 2SCR542F3
from ROHM Semiconductor USA, LLC

Middle power transistor 2SCR542F3 is suitable for Motor driver and LED driver, Power supply. [See More]

  • Packing Method: Tape Reel
  • IDSS: 3000
  • V(BR)DSS: 30
  • PD: 1000
NPN Medium Power Transistor (Switching) -- SST2222AHZG
from ROHM Semiconductor USA, LLC

SST2222AHZG is the high reliability Automotive transistor, suitable for audio frequency small signal amplifier. [See More]

  • Packing Method: Tape Reel
  • TJ: -55 to 150
  • PD: 200
  • Package Type: SOT23; SOT-23