Tape Reel Power MOSFET

Manufacturer: Rohm Semiconductor. Win Source Part Number: 1324435-HS8K1TB. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Packaging: Reel - TR. Standard Package: 3,000. Mounting: Surface Mount. FET Type: 2 N-Channel (Dual). FET Feature: Standard. Drain to Source... [See More]

• Packing Method: Tape Reel; Reel - TR
• Q_G: 6

• Polarity: N-Channel
• T_J: 150

Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF [See More]

• Packing Method: Tape Reel; Tape & Reel
• r_DS(on): 3.6

• Polarity: N-Channel
• Package Type: TO-205AF

Infineon ’s 600V CoolMOS ™ CFD7 Superjunction MOSFET IPB60R040CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0400

Manufacturer: ON Semiconductor. Win Source Part Number: 1232536-NTMD5838NLR2G. Packaging: Reel - TR. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: 8-SOIC (0.154", 3.90mm Width). Mounting: SMD. FET Type: 2 N-Channel (Dual). FET Feature: Logic Level Gate. Current - Continuous... [See More]

• Packing Method: Tape Reel; Reel - TR
• Q_G: 17

• Polarity: N-Channel
• T_J: -55 to 150

Power Bipolar Transistor, 1A I(C), 1-Element, NPN [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: SOT89

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0450

Manufacturer: ON Semiconductor. Win Source Part Number: 1232558-NTMFS4823NT1G. Packaging: Reel - TR. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: 8-PowerTDFN, 5 Leads. Mounting: SMD. Technology: MOSFET. Current - Continuous Drain (Id) @ 25 °C: 6.9A (Ta), 30A (Tc). [See More]

• Packing Method: Tape Reel; Reel - TR
• P_D: 860 to 32500

• Q_G: 13
• T_J: -55 to 150

Power Bipolar Transistor [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: TO-220; TO-220FM

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0600

Manufacturer: ON Semiconductor. Win Source Part Number: 1232572-NTMFS4931NT1G. Packaging: Reel - TR. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: 8-PowerTDFN. Mounting: SMD. Technology: MOSFET. Current - Continuous Drain (Id) @ 25 °C: 23A (Ta), 246A (Tc). Family Name:... [See More]

• Packing Method: Tape Reel; Reel - TR
• P_D: 950

• Q_G: 128
• T_J: -55 to 150

Power Bipolar Transistor [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: TO-220; TO-220-3

Infineons CoolMOS ™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS ™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.1600

Manufacturer: ON Semiconductor. Win Source Part Number: 1232580-NTMFS4C03NT1G. Packaging: Reel - TR. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: 8-PowerTDFN. Mounting: SMD. Technology: MOSFET. Current - Continuous Drain (Id) @ 25 °C: 30A (Ta), 136A (Tc). Family Name:... [See More]

• Packing Method: Tape Reel; Reel - TR
• P_D: 3100 to 64000

• Q_G: 45.2
• T_J: -55 to 150

Power Bipolar Transistor [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: DPAK

The 650V CoolMOS ™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. Infineon ’s 650V CoolMOS ™ CFD7 superjunction MOSFET IPB65R041CFD7 in a D2PAK package is ideally suited for resonant topologies in industrial... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0410

Manufacturer: ON Semiconductor. Win Source Part Number: 1232583-NTMFS5830NLT1G. Packaging: Reel - TR. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: 8-PowerTDFN, 5 Leads. Mounting: SMD. Technology: MOSFET. Current - Continuous Drain (Id) @ 25 °C: 28A (Ta), 172A (Tc). Part... [See More]

• Packing Method: Tape Reel; Reel - TR
• P_D: 3200 to 125000

• Q_G: 113
• T_J: -55 to 150

Bipolar Power Transistors [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: SSIP-3

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0450

Manufacturer: ON Semiconductor. Win Source Part Number: 1232602-NTMSD6N303R2. Series: FETKY. Packaging: Reel - TR. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: 8-SOIC (0.154", 3.90mm Width). Mounting: SMD. Technology: MOSFET. FET Feature: Schottky Diode (Isolated). Current -... [See More]

• Packing Method: Tape Reel; Reel - TR
• P_D: 2000

• Q_G: 30
• T_J: -55 to 150

Bipolar Power Transistors [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: PLSP0003ZB-A

500V CoolMOS ™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.2800

Manufacturer: ON Semiconductor. Win Source Part Number: 1232663-NTTFS5820NLTAG. Packaging: Reel - TR. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: 8-PowerWDFN. Mounting: SMD. Technology: MOSFET. Current - Continuous Drain (Id) @ 25 °C: 11A (Ta), 37A (Tc). Family Name:... [See More]

• Packing Method: Tape Reel; Reel - TR
• P_D: 2700 to 33000

• Q_G: 28
• T_J: -55 to 150

Power Field-Effect Transistor [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: DPAK4

Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.1450

Manufacturer: ON Semiconductor. Win Source Part Number: 1236508-PCP1402-TD-H. Packaging: Reel - TR. Operating Temperature Range: 150 °C (TJ). Package: TO-243AA. Mounting: SMD. Technology: MOSFET. Current - Continuous Drain (Id) @ 25 °C: 1.2A (Ta). Family Name: PCP1402. Categories: Discrete... [See More]

• Packing Method: Tape Reel; Reel - TR
• P_D: 3500

• Q_G: 4.2
• T_J: 150

Power Field-Effect Transistor, N-Channel, MOSFET [See More]

• Packing Method: Tape Reel; Tape & Reel
• Package Type: SC-88/SC70-6/SOT-363 6

• Polarity: N-Channel

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.1800

Manufacturer: ON Semiconductor. Win Source Part Number: 1182494-HUFA76413DK8T. Packaging: Reel. Mounting Style: SMD. FET Feature: Logic Level Gate. Transistor Polarity: 2 N-Channel (Dual). Categories: Discrete Semiconductor Products. Supplier Device Package: 8-SOIC. Status: Obsolete. Temperature... [See More]

• Packing Method: Tape Reel; Reel
• V_(BR)DSS: 60

• Polarity: N-Channel; 2 N-Channel (Dual)
• Q_G: 23

N-Channel Power MOSFET 250V, 0.4A [See More]

• Packing Method: Tape Reel; Tape & Reel
• Package Type: TO-92; TO-92-3

• Polarity: N-Channel

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.1800

Manufacturer: Infineon Technologies. Win Source Part Number: 1186158-IPD50R650CE. Series: CoolMOS. Packaging: Reel - TR. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: TO-252-3, DPak (2 Leads + Tab), SC-63. Mounting: SMD. Technology: MOSFET. Current - Continuous Drain (Id) @... [See More]

• Packing Method: Tape Reel; Reel - TR
• P_D: 47000

• Q_G: 15
• T_J: -55 to 150

Power Field-Effect Transistor, N-Channel MOSFET [See More]

• Packing Method: Tape Reel; Tape & Reel
• Package Type: SOT-523

• Polarity: N-Channel

600V CoolMOS ™ PFD7 superjunction MOSFET in TO-252 DPAK package. The 600V CoolMOS ™ PFD7 superjunction MOSFET (IPD60R1K0PFD7S) complements the CoolMOS ™ 7 offering for consumer applications. The IPD60R1K0PFD7S in a TO-252 DPAK package features RDS(on) of 1,000mOhm leading to low... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 1

Manufacturer: Vishay. Win Source Part Number: 1187059-IRF540STRLPBF. Packaging: Reel - TR. Operating Temperature Range: -55 °C ~ 175 °C (TJ). Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB. Mounting: SMD. Technology: MOSFET. Current - Continuous Drain (Id) @ 25 °C: 28A (Tc). [See More]

• Packing Method: Tape Reel; Reel - TR
• P_D: 3700 to 150000

• Q_G: 72
• T_J: -55 to 175

Airfast RF Power GaN Transistor, 1800-2200 MHz, 36 W Avg., 48 V [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: CFM2F

600V CoolMOS ™ PFD7 superjunction MOSFET in TO-252 DPAK package. The 600V CoolMOS ™ PFD7 superjunction MOSFET (IPD60R1K5PFD7S) complements the CoolMOS ™ 7 offering for consumer applications. The IPD60R1K5PFD7S in a TO-252 DPAK package features RDS(on) of 1,500mOhm leading to low... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 1.5

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187104-IRF630STRR. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK (TO-263). Drive Voltage (Max Rds On, Min Rds On):... [See More]

• Packing Method: Tape Reel; Tape and Reel
• V_(BR)DSS: 200

• Polarity: N-Channel; N-Channel
• Q_G: 43

RF Power LDMOS Transistor [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: CFM4F

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.1900

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187404-IRF840ASTRL. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Tape Reel; Tape and Reel
• V_(BR)DSS: 500

• Polarity: N-Channel; N-Channel
• Q_G: 38

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET [See More]

• Packing Method: Tape Reel; Tape & Reel
• Package Type: HQFN24

• Polarity: N-Channel

Infineon ’s answer for flyback topologies. Developed to serve today ’s and especially tomorrow ’s trends in flyback topologies – the new 700V CoolMOS ™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 1.4

Manufacturer: Vishay. Win Source Part Number: 1187405-IRF840ASTRLPBF. Packaging: Reel - TR. Operating Temperature Range: -55 °C ~ 150 °C (TJ). Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB. Mounting: SMD. Technology: MOSFET. Current - Continuous Drain (Id) @ 25 °C: 8A (Tc). [See More]

• Packing Method: Tape Reel; Reel - TR
• P_D: 3100 to 125000

• Q_G: 38
• T_J: -55 to 150

Airfast RF Power LDMOS Transistor [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: FM4F

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS ™ P7 technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS ™ C3, the 950 V CoolMOS ™ P7 series delivers... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 1.2

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187442-IRF9530STRLPBF. Packaging: Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Tape Reel; Reel
• V_(BR)DSS: 100

• Polarity: P-Channel; P-Channel
• Q_G: 38

Airfast RF Power LDMOS Transistor, 2110-2200 MHz, 87 W Avg., 30 V [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: CFM6F

Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0450

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187483-IRF9Z34STRL. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: P-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Tape Reel; Tape and Reel
• V_(BR)DSS: 60

• Polarity: P-Channel; P-Channel
• Q_G: 34

Power Field-Effect Transistor [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: D2PAK7P

Double DPAK (D-DPAK) Innovative top-side cooled SMD solution for high power applications. Infineon Technologies introduces Double DPAK (D-DPAK), the first top-side cooled surface mount device (SMD) package addressing high power SMPS applications such as PC power, solar, server and telecom. The... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0500

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187541-IRFBC40STRL. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Tape Reel; Tape and Reel
• V_(BR)DSS: 600

• Polarity: N-Channel; N-Channel
• Q_G: 60

Power Field-Effect Transistor, 5.8A I(D), 60V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET [See More]

• Packing Method: Tape Reel; Tape & Reel
• r_DS(on): 0.0360

• Polarity: N-Channel
• Package Type: MG-WDSON-4

The 600 V CoolMOS ™ S7 SJ MOSFET family is optimized for low conduction losses and features the lowest RDS(on) in the market when it comes to high-voltage SJ MOSFETs. It comes with an unprecedented RDS(on) x price figure of merit and is a perfect fit for solid-state circuit breakers and... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0100

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187548-IRFBF20STRL. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Tape Reel; Tape and Reel
• V_(BR)DSS: 900

• Polarity: N-Channel; N-Channel
• Q_G: 38

Power Field-Effect Transistor, 19A I(D), 100V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET [See More]

• Packing Method: Tape Reel; Tape & Reel
• r_DS(on): 0.0044

• Polarity: N-Channel
• Package Type: MG-WDSON-11

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0650

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187549-IRFBF20STRRPBF. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D2PAK. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Tape Reel; Tape and Reel
• V_(BR)DSS: 900

• Polarity: N-Channel; N-Channel
• Q_G: 38

30V-250V N-Channel Power MOSFET Bare Die [See More]

• Packing Method: Tape Reel; Tape & Reel
• Package Type: Die

• Polarity: N-Channel

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0650

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187714-IRFL014TR. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: SOT-223. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Tape Reel; Tape and Reel
• V_(BR)DSS: 60

• Polarity: N-Channel; N-Channel
• Q_G: 11

Power Field-Effect Transistor [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: QFN8

Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0750

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187726-IRFL214TR. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: SOT-223. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Tape Reel; Tape and Reel
• V_(BR)DSS: 250

• Polarity: N-Channel; N-Channel
• Q_G: 8.2

Power Field-Effect Transistor [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: DUAL PQFN 5X6 8L

Infineons CoolMOS ™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS ™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.1800

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187850-IRFR024TR. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D-Pak. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Tape Reel; Tape and Reel
• V_(BR)DSS: 60

• Polarity: N-Channel; N-Channel
• Q_G: 25

Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: SOT1061

The 650V CoolMOS ™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. Infineon ’s 650V CoolMOS ™ CFD7 superjunction MOSFET IPL65R065CFD7 in a ThinPAK 8x8 package is ideally suited for resonant topologies in industrial... [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0650

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187851-IRFR024TRL. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D-Pak. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Tape Reel; Tape and Reel
• V_(BR)DSS: 60

• Polarity: N-Channel; N-Channel
• Q_G: 25

Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: SOT1061

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Packing Method: Tape Reel; TAPE & REEL
• Transistor Technology / Material: Si/SiC

• Polarity: N-Channel; N
• r_DS(on): 0.0990

Manufacturer: Vishay Siliconix. Win Source Part Number: 1187857-IRFR110TR. Packaging: Tape and Reel. Mounting Style: SMD. Technology: MOSFET. Transistor Polarity: N-Channel. Categories: Discrete Semiconductor Products. Supplier Device Package: D-Pak. Drive Voltage (Max Rds On, Min Rds On): 10V. [See More]

• Packing Method: Tape Reel; Tape and Reel
• V_(BR)DSS: 100

• Polarity: N-Channel; N-Channel
• Q_G: 8.3

Power Bipolar Transistor [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: SOT223

The Power MOSFET QS8J13 is suitable for switching power supply. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: -12

• Polarity: P-Channel
• I_DSS: -5500

30V NCH NCH MID POWER MOSFET [See More]

• Packing Method: Tape Reel; Cut Tape (CT)
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 30

The Power MOSFET QS8J13 is suitable for switching power supply. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: -12

• Polarity: P-Channel
• I_DSS: -5500

TT8J3 is complex type MOSFET(Pch+Pch) for switching application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: -30

• Polarity: P-Channel
• I_DSS: -2500

30V NCH+NCH POWER MOSFET [See More]

• Packing Method: Tape Reel; Cut Tape (CT)
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 30

The UT6J3 is a Small Surface Mount Package MOSFET for switching application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: -20

• Polarity: P-Channel
• I_DSS: -3000

UT6JA2 is low on-resistance and small surface mount package MOSFET for switching application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: -30

• Polarity: P-Channel
• I_DSS: -4000

60V PCH+PCH MIDDLE POWER MOSFET [See More]

• Packing Method: Tape Reel; Cut Tape (CT)
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 60

Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: -30

• Polarity: P-Channel
• I_DSS: -9000

Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: -30

• Polarity: P-Channel
• I_DSS: 9000

Dual N-Channel 20 V 0.018 Ohm 3.1 W Surface Mount Power Mosfet - SOIC-8 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Transistor Technology / Material: SILICON

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

HP8M51TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for switching application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 100

• Polarity: N-Channel; P-Channel
• I_DSS: 4500

2SA2071P5 is a power transistor for high speed switching. [See More]

• Packing Method: Tape Reel
• T_J: -55 to 150

• P_D: 500
• Package Type: SOT89; SOT-89

Lateral N-Channel Broadband RF Power MOSFET, 520 MHz, 3 W, 12.5 V [See More]

• Packing Method: Tape Reel; Digi-Reel?
• Type: LDMOSFET

• Polarity: N-Channel

SCT4018KR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that... [See More]

• Packing Method: Tape Reel
• r_DS(on): 0.0180

• V_(BR)DSS: 1200
• I_DSS: 81000

Transistor [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 250

• Polarity: N-Channel
• I_DSS: 4000

MOSFET Dual Cool NCh NexFET Power MOSFET [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 25

RCJ451N20 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 200

• Polarity: N-Channel
• I_DSS: 45000

Transistor [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 250

• Polarity: N-Channel
• I_DSS: 5000

MOSFET Dual P-Channel Nex FET Power MOSFET [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Transistor Technology / Material: SILICON

• Polarity: P-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

The ultra-small package(1006size) RV2C010UN is suitable for portable devices. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 20

• Polarity: N-Channel
• I_DSS: 1000

RUF025N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 20

• Polarity: N-Channel
• I_DSS: 2500

MOSFET UltraFET Power MOSFET [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 100

RJ1U330AAFRG is the high reliability automotive MOSFET, suitable for switching power supply. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 250

• Polarity: N-Channel
• I_DSS: 33000

RUL035N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 20

• Polarity: N-Channel
• I_DSS: 3500

N-Channel 600 V 104 mOhm 42 nC Surface Mount CoolMOS? Power Mosfet - VSON-4 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Transistor Technology / Material: SILICON

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

RD3U041AAFRA is an automotive grade MOSFET that is AEC-Q101 qualified, and suitable for switching applications. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 250

• Polarity: N-Channel
• I_DSS: 4000

RF4E100AJ is high power small mold package(HUML2020L8) MOSFET for switching and DC/DC converter, battery switch application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 10000

NCH 100V 5A POWER MOSFET [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 100

Two MOSFETs of 30V Pch and Nch (common drain configuration) are built in a symmetric dual package. Ideal for switching and motor drive applications. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel; P-Channel
• I_DSS: 7000

RQ3E100BN is high power package(HSMT8) MOSFET for switching. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 13500

NCH 20V 3.5A POWER MOSFET [See More]

• Packing Method: Tape Reel; Cut Tape (CT)
• P_D: 1000

• Q_G: 5.7
• T_J: 150

HP8K22 is low on-resistance MOSFET for DC/DC converter. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 27000

The small surface mount package RQ5E035BN is suitable for switching. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 3500

NCH 30V 7A MIDDLE POWER MOSFET [See More]

• Packing Method: Tape Reel; Cut Tape (CT)
• P_D: 1000

• Q_G: 23
• T_J: -55 to 150

HS8K1 is standard MOSFET for switching application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 10000

Power MOSFET RQ6E045BN is suitable for switching power supply. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 4500

NCH 600V 15A POWER MOSFET [See More]

• Packing Method: Tape Reel; Cut Tape (CT)
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 600

BD90302NUF-C are boost MOSFET with drivers for BD8Pxxx Series exclusive use. BD8Pxxx Series is a buck DC/DC Converter with boost function. When used with BD8Pxxx Series, a synchronous buck-boost DC/DC Converter is constituted. [See More]

• Packing Method: Tape Reel
• Package Type: VSON10FV3030 (Wettable Flank)

• T_J: -55 to 150
• Transistor Grade / Operating Range: Commercial

R5007FNX is Power MOSFET for Switching Power Supply. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 500

• Polarity: N-Channel
• I_DSS: 7000

ON SEMICONDUCTOR - FDC653N - Power MOSFET, N Channel, 30 V, 5 A, 0.035 ohm, SuperSOT, Surface Mount [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 30

R6002END3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 600

• Polarity: N-Channel
• I_DSS: 2000

R6010MND3 is fast trr power MOSFET, suitable for switching power supply. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 600

• Polarity: N-Channel
• I_DSS: 10000

P-Channel Power MOSFET, -50V, -0.14A, 23 Ohm, Dual MCPH6 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• V_(BR)DSS: -50

• Polarity: P-Channel
• Q_G: 1.4

RS6P100BH is a power MOSFET with low on - resistance, suitable for switching. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 100

• Polarity: N-Channel
• I_DSS: 100000

Middle power transistor 2SCR542F3 is suitable for Motor driver and LED driver, Power supply. [See More]

• Packing Method: Tape Reel
• I_DSS: 3000

• V_(BR)DSS: 30
• P_D: 1000

POWER MOSFET, -30V, 3A, P-TYPE, [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• P_D: 1000

• Q_G: 10
• T_J: 150

RJ1P12BBD is a Power MOSFET with Low on - resistance, suitable for Switching. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 100

• Polarity: N-Channel
• I_DSS: 120000

SST2222AHZG is the high reliability Automotive transistor, suitable for audio frequency small signal amplifier. [See More]

• Packing Method: Tape Reel
• T_J: -55 to 150

• P_D: 200
• Package Type: SOT23; SOT-23

RJ1G08CGN IS A POWER MOSFET WITH [See More]

• Packing Method: Tape Reel; Cut Tape (CT)
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 40

RQ3P300BH is a power MOSFET with low on - resistance, suitable for switching. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 100

• Polarity: N-Channel
• I_DSS: 39000

Single N-Channel 25 V 1.3 mOhm 37 nC OptiMOS? Power Mosfet - TSDSON-8 FL [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Transistor Technology / Material: SILICON

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

RUF025N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 20

• Polarity: N-Channel
• I_DSS: 2500

Single N-Channel 30 V 0.046 O 5.7 nC Power Mosfet - SOT-363 (SC-70-6) [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Transistor Technology / Material: SILICON

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

RUL035N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 20

• Polarity: N-Channel
• I_DSS: 3500

Single N-Channel 34 V 12 mOhm 13 nC OptiMOS? Power Mosfet - TSDSON-8 [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Transistor Technology / Material: SILICON

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

RF4E100AJ is high power small mold package(HUML2020L8) MOSFET for switching and DC/DC converter, battery switch application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 10000

Single N-Channel 55 V 0.008 Ohm 130 nC HEXFET ® Power Mosfet - D2PAK [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Transistor Technology / Material: SILICON

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

RS1E240BN is MOSFET for switching application that features Low on-resistance. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 40000

Single N-Channel Power MOSFET 30 V, 69 A, 3.41mO [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Q_G: 26

• Polarity: N-Channel
• P_D: 2550

RQ5E035XN is a Small Signal MOSFET featuring low-on resistance and Built-in G-S Protection Diode. It is suitable for switching. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 3500

Single P-Channel 20 V 25 mOhm SMT TrenchFET Power Mosfet - PowerPAK SC-70-6L [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Transistor Technology / Material: SILICON

• Polarity: P-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

Power MOSFET RQ6E045BN is suitable for switching power supply. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 4500

Single P-Channel Power MOSFET -20V, -15A, 6.7mO [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• V_(BR)DSS: -20

• Polarity: P-Channel
• Q_G: 56

RW4E045AJ is a MOSFET for DC/DC converters, switching, battery switches. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 4500

TEXAS INSTRUMENTS - CSD16301Q2 - Power MOSFET, N Channel, 25 V, 5 A, 0.019 ohm, SON, Surface Mount [See More]

• Packing Method: Tape Reel; Tape & Reel (TR)
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 25

RJ1G12BGN is a Power MOSFET with Low on - resistance, suitable for Switching. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 40

• Polarity: N-Channel
• I_DSS: 120000