Tape Reel Power MOSFET

-12V Pch+Pch Middle Power MOSFET -- QS8J13
from ROHM Semiconductor GmbH

The Power MOSFET QS8J13 is suitable for switching power supply. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: -12
  • Polarity: P-Channel
  • IDSS: -5500
N Ch Power Mosfet, Stripfet, 200V, 30A, D2Pak, Full Reel; Transistor Polarity Stmicroelectronics -- 57P0602 [STB30NF20 from STMicroelectronics, Inc.]
from Newark, An Avnet Company

N CH POWER MOSFET, STripFET, 200V, 30A, D2PAK, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:30A; On Resistance Rds(on):0.065ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes [See More]

  • Packing Method: Tape Reel
  • rDS(on): 0.0650
  • Transistor Type: N Ch Power Mosfet, Stripfet, 200V, 30A, D2Pak, Full Reel; Transistor Polarity Stmicroelectronics
  • IDSS: 30000
-20V Pch+Pch Power MOSFET -- UT6J3
from ROHM Semiconductor GmbH

The UT6J3 is a Small Surface Mount Package MOSFET for switching application. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: -20
  • Polarity: P-Channel
  • IDSS: -3000
-30V Pch+Pch Power MOSFET -- SH8J66
from ROHM Semiconductor GmbH

Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: -30
  • Polarity: P-Channel
  • IDSS: -9000
100V Nch+Pch Power MOSFET -- HP8M51
from ROHM Semiconductor GmbH

HP8M51TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for switching application. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 100
  • Polarity: N-Channel; P-Channel
  • IDSS: 4500
20V 1A Nch Power MOSFET -- RV2C010UN
from ROHM Semiconductor GmbH

The ultra-small package(1006size) RV2C010UN is suitable for portable devices. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 20
  • Polarity: N-Channel
  • IDSS: 1000
250V 33A TO-263, Automotive Power MOSFET -- RJ1U330AAFRG
from ROHM Semiconductor GmbH

RJ1U330AAFRG is the high reliability automotive MOSFET, suitable for switching power supply. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 250
  • Polarity: N-Channel
  • IDSS: 33000
250V 4A TO-252, Automotive Power MOSFET -- RD3U041AAFRA
from ROHM Semiconductor GmbH

RD3U041AAFRA is an automotive grade MOSFET that is AEC-Q101 qualified, and suitable for switching applications. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 250
  • Polarity: N-Channel
  • IDSS: 4000
30V Dual Common Drain Pch+Nch Power MOSFET -- HS8MA2
from ROHM Semiconductor GmbH

Two MOSFETs of 30V Pch and Nch (common drain configuration) are built in a symmetric dual package. Ideal for switching and motor drive applications. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 30
  • Polarity: N-Channel; P-Channel
  • IDSS: 7000
30V Nch+Nch Middle Power MOSFET -- HP8K22
from ROHM Semiconductor GmbH

HP8K22 is low on-resistance MOSFET for DC/DC converter. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 30
  • Polarity: N-Channel
  • IDSS: 27000
30V Nch+Nch Power MOSFET -- HS8K1
from ROHM Semiconductor GmbH

HS8K1 is standard MOSFET for switching application. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 30
  • Polarity: N-Channel
  • IDSS: 10000
5.5 V, 2 A Pch/Nch Power MOSFET with Drivers For Automotive -- BD90302NUF-C
from ROHM Semiconductor GmbH

BD90302NUF-C are boost MOSFET with drivers for BD8Pxxx Series exclusive use. BD8Pxxx Series is a buck DC/DC Converter with boost function. When used with BD8Pxxx Series, a synchronous buck-boost DC/DC Converter is constituted. [See More]

  • Packing Method: Tape Reel
  • Package Type: VSON10FV3030 (Wettable Flank)
  • TJ: -55 to 150
  • Transistor Grade / Operating Range: Commercial
600V 2A TO-252, Low-noise Power MOSFET -- R6002END3
from ROHM Semiconductor GmbH

R6002END3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 600
  • Polarity: N-Channel
  • IDSS: 2000
Nch 100V 120A Power MOSFET -- RJ1P12BBD
from ROHM Semiconductor GmbH

RJ1P12BBD is a Power MOSFET with Low on - resistance, suitable for Switching. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 100
  • Polarity: N-Channel
  • IDSS: 120000
Nch 100V 39A, HSMT8, Power MOSFET -- RQ3P300BH
from ROHM Semiconductor GmbH

RQ3P300BH is a power MOSFET with low on - resistance, suitable for switching. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 100
  • Polarity: N-Channel
  • IDSS: 39000
Nch 100V 60A Power MOSFET -- RS1P600BE
from ROHM Semiconductor GmbH

RS1P600BE is a power MOSFET with low on - resistance, suitable for DC/DC converters. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 100
  • Polarity: N-Channel
  • IDSS: 60000
Nch 20V 2.5A Middle Power MOSFET -- RUF025N02FRA
from ROHM Semiconductor GmbH

RUF025N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 20
  • Polarity: N-Channel
  • IDSS: 2500
Nch 20V 3.5A Power MOSFET -- RUL035N02FRA
from ROHM Semiconductor GmbH

RUL035N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 20
  • Polarity: N-Channel
  • IDSS: 3500
Nch 30V 10A Middle Power MOSFET -- RF4E100AJ
from ROHM Semiconductor GmbH

RF4E100AJ is high power small mold package(HUML2020L8) MOSFET for switching and DC/DC converter, battery switch application. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 30
  • Polarity: N-Channel
  • IDSS: 10000
Nch 30V 3.5A Middle Power MOSFET -- RQ5E035XN
from ROHM Semiconductor GmbH

RQ5E035XN is a Small Signal MOSFET featuring low-on resistance and Built-in G-S Protection Diode. It is suitable for switching. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 30
  • Polarity: N-Channel
  • IDSS: 3500
Nch 30V 4.5A Power MOSFET -- RQ6E045BN
from ROHM Semiconductor GmbH

Power MOSFET RQ6E045BN is suitable for switching power supply. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 30
  • Polarity: N-Channel
  • IDSS: 4500
Nch 30V 4.5A Power MOSFET -- RW4E045AJ
from ROHM Semiconductor GmbH

RW4E045AJ is a MOSFET for DC/DC converters, switching, battery switches. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 30
  • Polarity: N-Channel
  • IDSS: 4500
Nch 40V 120A Power MOSFET -- RJ1G12BGN
from ROHM Semiconductor GmbH

RJ1G12BGN is a Power MOSFET with Low on - resistance, suitable for Switching. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 40
  • Polarity: N-Channel
  • IDSS: 120000
Nch 60V 2A Middle Power MOSFET -- RJP020N06
from ROHM Semiconductor GmbH

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 60
  • Polarity: N-Channel
  • IDSS: 2000
Nch+Nch 30V Power MOSFET -- HP8KA1
from ROHM Semiconductor GmbH

The surface mount package HP8KA1 is suitable for Load Switch, LiB charging and discharging switch. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 30
  • Polarity: N-Channel
  • IDSS: 14000
NPN, DFN2020-3S, 30V 3A, Middle Power Transistor -- 2SCR542F3
from ROHM Semiconductor GmbH

Middle power transistor 2SCR542F3 is suitable for Motor driver and LED driver, Power supply. [See More]

  • Packing Method: Tape Reel
  • IDSS: 3000
  • V(BR)DSS: 30
  • PD: 1000
-12V Pch+Pch Middle Power MOSFET -- QS8J13
from ROHM Semiconductor USA, LLC

The Power MOSFET QS8J13 is suitable for switching power supply. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: -12
  • Polarity: P-Channel
  • IDSS: -5500
-30V Pch+Pch Middle Power MOSFET -- TT8J3
from ROHM Semiconductor USA, LLC

TT8J3 is complex type MOSFET(Pch+Pch) for switching application. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: -30
  • Polarity: P-Channel
  • IDSS: -2500
-30V Pch+Pch Middle Power MOSFET -- UT6JA2
from ROHM Semiconductor USA, LLC

UT6JA2 is low on-resistance and small surface mount package MOSFET for switching application. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: -30
  • Polarity: P-Channel
  • IDSS: -4000
-30V Pch+Pch Power MOSFET -- SH8J66
from ROHM Semiconductor USA, LLC

Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: -30
  • Polarity: P-Channel
  • IDSS: 9000
-60V 3A Power Transistor -- 2SA2071P5
from ROHM Semiconductor USA, LLC

2SA2071P5 is a power transistor for high speed switching. [See More]

  • Packing Method: Tape Reel
  • TJ: -55 to 150
  • PD: 500
  • Package Type: SOT89; SOT-89
10V Drive Nch Power MOSFET -- RCD041N25
from ROHM Semiconductor USA, LLC

Transistor [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 250
  • Polarity: N-Channel
  • IDSS: 4000
10V Drive Nch Power MOSFET -- RCJ050N25
from ROHM Semiconductor USA, LLC

Transistor [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 250
  • Polarity: N-Channel
  • IDSS: 5000
Nch 20V 2.5A Middle Power MOSFET -- RUF025N02FRA
from ROHM Semiconductor USA, LLC

RUF025N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 20
  • Polarity: N-Channel
  • IDSS: 2500
Nch 20V 3.5A Power MOSFET -- RUL035N02FRA
from ROHM Semiconductor USA, LLC

RUL035N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 20
  • Polarity: N-Channel
  • IDSS: 3500
Nch 30V 10A Middle Power MOSFET -- RF4E100AJ
from ROHM Semiconductor USA, LLC

RF4E100AJ is high power small mold package(HUML2020L8) MOSFET for switching and DC/DC converter, battery switch application. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 30
  • Polarity: N-Channel
  • IDSS: 10000
Nch 30V 10A Middle Power MOSFET -- RQ3E100BN
from ROHM Semiconductor USA, LLC

RQ3E100BN is high power package(HSMT8) MOSFET for switching. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 30
  • Polarity: N-Channel
  • IDSS: 13500
Nch 30V 3.5A Power MOSET -- RQ5E035BN
from ROHM Semiconductor USA, LLC

The small surface mount package RQ5E035BN is suitable for switching. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 30
  • Polarity: N-Channel
  • IDSS: 3500
Nch 30V 4.5A Power MOSFET -- RQ6E045BN
from ROHM Semiconductor USA, LLC

Power MOSFET RQ6E045BN is suitable for switching power supply. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 30
  • Polarity: N-Channel
  • IDSS: 4500
Nch 500V 7A Power MOSFET -- R5007FNX
from ROHM Semiconductor USA, LLC

R5007FNX is Power MOSFET for Switching Power Supply. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 500
  • Polarity: N-Channel
  • IDSS: 7000
Nch 600V 10A Power MOSFET -- R6010MND3
from ROHM Semiconductor USA, LLC

R6010MND3 is fast trr power MOSFET, suitable for switching power supply. [See More]

  • Packing Method: Tape Reel
  • V(BR)DSS: 600
  • Polarity: N-Channel
  • IDSS: 10000
NPN 3.0A 30V Middle Power Transistor -- 2SCR542F3
from ROHM Semiconductor USA, LLC

Middle power transistor 2SCR542F3 is suitable for Motor driver and LED driver, Power supply. [See More]

  • Packing Method: Tape Reel
  • IDSS: 3000
  • V(BR)DSS: 30
  • PD: 1000
NPN Medium Power Transistor (Switching) -- SST2222AHZG
from ROHM Semiconductor USA, LLC

SST2222AHZG is the high reliability Automotive transistor, suitable for audio frequency small signal amplifier. [See More]

  • Packing Method: Tape Reel
  • TJ: -55 to 150
  • PD: 200
  • Package Type: SOT23; SOT-23