Tape Reel Power MOSFET
from ROHM Semiconductor GmbH
The Power MOSFET QS8J13 is suitable for switching power supply. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: -12
- Polarity: P-Channel
- IDSS: -5500
from Rochester Electronics
Nexperia 2PD2150 - Power Bipolar Transistor, MPT3 [See More]
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SOT89; SOT-89
from Newark, An Avnet Company
N CH POWER MOSFET, STripFET, 200V, 30A, D2PAK, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:30A; On Resistance Rds(on):0.065ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes [See More]
- Packing Method: Tape Reel
- rDS(on): 0.0650
- Transistor Type: N Ch Power Mosfet, Stripfet, 200V, 30A, D2Pak, Full Reel; Transistor Polarity Stmicroelectronics
- IDSS: 30000
from ROHM Semiconductor GmbH
The UT6J3 is a Small Surface Mount Package MOSFET for switching application. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: -20
- Polarity: P-Channel
- IDSS: -3000
from Rochester Electronics
2SA1460 - Power Bipolar Transistor, PNP [See More]
- Packing Method: Tape Reel; Tape & Reel
- Package Type: TO-220; TO-220FM
from Newark, An Avnet Company
N CH POWER MOSFET, STripFET, 200V, 5A, DPAK, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:5A; On Resistance Rds(on):0.65ohm; Transistor Mounting:Surface Mount; No. of Pins:2PinsRoHS Compliant: Yes [See More]
- Packing Method: Tape Reel
- rDS(on): 0.6500
- Transistor Type: N Ch Power Mosfet, Stripfet, 200V, 5A, Dpak, Full Reel; Transistor Polarity Stmicroelectronics
- IDSS: 5000
from ROHM Semiconductor GmbH
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: -30
- Polarity: P-Channel
- IDSS: -9000
from Rochester Electronics
2SB1578 - Power Bipolar Transistor, 5A, 60V, PNP [See More]
- Packing Method: Tape Reel; Tape & Reel
- Package Type: TO-220; TO-220-3
from Newark, An Avnet Company
N CHANNEL POWER MOSFET, 30V, 171A, SO-8FL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:171A; On Resistance Rds(on):0.0013ohm; Transistor Mounting:Surface Mount; Threshold Voltage Vgs:2V RoHS Compliant: Yes [See More]
- Packing Method: Tape Reel
- Polarity: N-Channel
- Transistor Type: N Channel Power Mosfet, 30V, 171A, So-8Fl; Transistor Polarity On Semiconductor
- rDS(on): 0.0013
from ROHM Semiconductor GmbH
HP8M51TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for switching application. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 100
- Polarity: N-Channel; P-Channel
- IDSS: 4500
from Rochester Electronics
2SC3365 - Power Bipolar Transistor, 10A, 400V, NPN [See More]
- Packing Method: Tape Reel; Tape & Reel
- Package Type: TO-218
from Newark, An Avnet Company
N CHANNEL POWER MOSFET, HEXFET, 30V, 27A, PQFN-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:27A; On Resistance Rds(on):0.0025ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes [See More]
- Packing Method: Tape Reel
- Polarity: N-Channel
- Transistor Type: N Channel Power Mosfet, Hexfet, 30V, 27A, Pqfn-8; Transistor Polarity Infineon
- rDS(on): 0.0025
from ROHM Semiconductor GmbH
The ultra-small package(1006size) RV2C010UN is suitable for portable devices. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 20
- Polarity: N-Channel
- IDSS: 1000
from Rochester Electronics
2SC4003 - NPN Power Transistor [See More]
- Packing Method: Tape Reel; Tape & Reel
from Newark, An Avnet Company
N CHANNEL POWER MOSFET, HEXFET, 60V, 270A, D2PAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:270A; On Resistance Rds(on):0.0019ohm; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes [See More]
- Packing Method: Tape Reel
- Polarity: N-Channel
- Transistor Type: N Channel Power Mosfet, Hexfet, 60V, 270A, D2Pak; Transistor Polarity Infineon
- rDS(on): 0.0019
from ROHM Semiconductor GmbH
RJ1U330AAFRG is the high reliability automotive MOSFET, suitable for switching power supply. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 250
- Polarity: N-Channel
- IDSS: 33000
from Rochester Electronics
2SC5292 - Bipolar Power Transistors [See More]
- Packing Method: Tape Reel; Tape & Reel
- Package Type: MP10
from Newark, An Avnet Company
N CHANNEL POWER MOSFET, NEXFET, 25V, 100A, SON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:100A; On Resistance Rds(on):0.0019ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes [See More]
- Packing Method: Tape Reel
- Polarity: N-Channel
- Transistor Type: N Channel Power Mosfet, Nexfet, 25V, 100A, Son-8; Transistor Polarity Texas Instruments
- rDS(on): 0.0019
from ROHM Semiconductor GmbH
RD3U041AAFRA is an automotive grade MOSFET that is AEC-Q101 qualified, and suitable for switching applications. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 250
- Polarity: N-Channel
- IDSS: 4000
from Rochester Electronics
2SD1163 - Power Bipolar Transistor, 7A, 150V, NPN [See More]
- Packing Method: Tape Reel; Tape & Reel
- Package Type: CAN3/4
from Newark, An Avnet Company
N CHANNEL POWER MOSFET, STripFET, 24V, 280A, POWERSO-10, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:24V; Continuous Drain Current Id:280A; On Resistance Rds(on):800 µohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes [See More]
- Packing Method: Tape Reel
- Polarity: N-Channel
- Transistor Type: N Channel Power Mosfet, Stripfet, 24V, 280A, Powerso-10, Full Reel; Transistor Polarity Stmicroelectronics
- rDS(on): 8.00E-4
from ROHM Semiconductor GmbH
Two MOSFETs of 30V Pch and Nch (common drain configuration) are built in a symmetric dual package. Ideal for switching and motor drive applications. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 30
- Polarity: N-Channel; P-Channel
- IDSS: 7000
from Rochester Electronics
2SD1616 - NPN Epitaxial Transistor for Low-Frequency Power Amplifier [See More]
- Packing Method: Tape Reel; Tape & Reel
- Package Type: TO-92; TO-92
from Newark, An Avnet Company
P CHANNEL POWER MOSFET, HEXFET, -20V, -2.6A, SOT-23; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.6A; On Resistance Rds(on):0.09ohm; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes [See More]
- Packing Method: Tape Reel
- Polarity: P-Channel
- Transistor Type: P Channel Power Mosfet, Hexfet, -20V, -2.6A, Sot-23; Transistor Polarity Infineon
- rDS(on): 0.0900
from ROHM Semiconductor GmbH
HP8K22 is low on-resistance MOSFET for DC/DC converter. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 30
- Polarity: N-Channel
- IDSS: 27000
from Rochester Electronics
2SJ133 - Power Field-Effect Transistor [See More]
- Packing Method: Tape Reel; Tape & Reel
- Package Type: TO-252 (DPAK); TO-252-3
from Newark, An Avnet Company
POWER MOSFET 80V SINGLE N CHANNEL ROHS COMPLIANT: YES [See More]
- Packing Method: Tape Reel
- Package Type: TO-3
- Polarity: N-Channel
from ROHM Semiconductor GmbH
HS8K1 is standard MOSFET for switching application. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 30
- Polarity: N-Channel
- IDSS: 10000
from Rochester Electronics
2SK2570 - Power Field-Effect Transistor, 0.2A, 20V, N-Channel MOSFET [See More]
- Packing Method: Tape Reel; Tape & Reel
- Package Type: CPH3
- Polarity: N-Channel
from Newark, An Avnet Company
Power MOSFET, N Channel, 1 A, 800 V, 15.5 ohm, 10 V, 5 V RoHS Compliant: Yes [See More]
- Packing Method: Tape Reel
- Package Type: TO-3
- Polarity: N-Channel
from ROHM Semiconductor GmbH
BD90302NUF-C are boost MOSFET with drivers for BD8Pxxx Series exclusive use. BD8Pxxx Series is a buck DC/DC Converter with boost function. When used with BD8Pxxx Series, a synchronous buck-boost DC/DC Converter is constituted. [See More]
- Packing Method: Tape Reel
- Package Type: VSON10FV3030 (Wettable Flank)
- TJ: -55 to 150
- Transistor Grade / Operating Range: Commercial
from Rochester Electronics
2SK3816 - Power Field-Effect Transistor, N-Channel, MOSFET [See More]
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SC-88/SC70-6/SOT-363 6
- Polarity: N-Channel
from Newark, An Avnet Company
POWER MOSFET, N CHANNEL, 10A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.37ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes [See More]
- Packing Method: Tape Reel
- Polarity: N-Channel
- Transistor Type: Power Mosfet, N Channel, 10A, To-252-3; Transistor Polarity Stmicroelectronics
- rDS(on): 0.3700
from ROHM Semiconductor GmbH
R6002END3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 600
- Polarity: N-Channel
- IDSS: 2000
from Rochester Electronics
2SK4065 - N-Channel Power MOSFET, 75V, 100A, TO-263-2L [See More]
- Packing Method: Tape Reel; Tape & Reel
- Package Type: D2PAK
- Polarity: N-Channel
from Newark, An Avnet Company
Power MOSFET, N Channel, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V RoHS Compliant: Yes [See More]
- Packing Method: Tape Reel
- Package Type: TO-3
- Polarity: N-Channel
from ROHM Semiconductor GmbH
RJ1P12BBD is a Power MOSFET with Low on - resistance, suitable for Switching. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 100
- Polarity: N-Channel
- IDSS: 120000
from Rochester Electronics
74AUP1Z04 - Low-power X-tal driver with enable and internal transistor [See More]
- Packing Method: Tape Reel; Tape & Reel
- Package Type: X2SON6
from Newark, An Avnet Company
Power MOSFET, N Channel, 16.4 A, 650 V, 0.18 ohm, 10 V, 3 V RoHS Compliant: Yes [See More]
- Packing Method: Tape Reel
- Package Type: TO-3
- Polarity: N-Channel
from ROHM Semiconductor GmbH
RQ3P300BH is a power MOSFET with low on - resistance, suitable for switching. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 100
- Polarity: N-Channel
- IDSS: 39000
from Rochester Electronics
A2I25D025N - Airfast RF Power LDMOS Transistor, 2300-2690 MHz [See More]
- Packing Method: Tape Reel; Tape & Reel
- Package Type: FM17F
from Newark, An Avnet Company
POWER MOSFET, N CHANNEL, 20A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.21ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes [See More]
- Packing Method: Tape Reel
- Polarity: N-Channel
- Transistor Type: Power Mosfet, N Channel, 20A, To-263-3; Transistor Polarity Stmicroelectronics
- rDS(on): 0.2100
from ROHM Semiconductor GmbH
RS1P600BE is a power MOSFET with low on - resistance, suitable for DC/DC converters. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 100
- Polarity: N-Channel
- IDSS: 60000
from Rochester Electronics
Nexperia BC52PAS - 60V, 1 A PNP medium power transistors [See More]
- Packing Method: Tape Reel; Tape & Reel
- Package Type: HUSON3
from Newark, An Avnet Company
POWER MOSFET, N CHANNEL, 22.5A, PWRFLAT; Transistor Polarity:N Channel; Continuous Drain Current Id:22.5A; Drain Source Voltage Vds:550V; On Resistance Rds(on):0.066ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes [See More]
- Packing Method: Tape Reel
- Polarity: N-Channel
- Transistor Type: Power Mosfet, N Channel, 22.5A, Pwrflat; Transistor Polarity Stmicroelectronics
- rDS(on): 0.0660
from ROHM Semiconductor GmbH
RUF025N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 20
- Polarity: N-Channel
- IDSS: 2500
from Rochester Electronics
BC869 - PNP medium power transistor [See More]
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SOT89
from Newark, An Avnet Company
Power MOSFET, N Channel, 33 A, 600 V, 0.083 ohm, 10 V, 2 V RoHS Compliant: Yes [See More]
- Packing Method: Tape Reel
- Package Type: TO-3
- Polarity: N-Channel
from ROHM Semiconductor GmbH
RUL035N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 20
- Polarity: N-Channel
- IDSS: 3500
from Rochester Electronics
BCP51-10T - 45 V, 1 A PNP medium power transistors [See More]
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SOT223
from Newark, An Avnet Company
Power MOSFET, N Channel, 4 A, 650 V, 1.2 ohm, 10 V, 3 V RoHS Compliant: Yes [See More]
- Packing Method: Tape Reel
- Package Type: TO-3
- Polarity: N-Channel
from ROHM Semiconductor GmbH
RF4E100AJ is high power small mold package(HUML2020L8) MOSFET for switching and DC/DC converter, battery switch application. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 30
- Polarity: N-Channel
- IDSS: 10000
from Rochester Electronics
BCP52-10 - 60V, 1A PNP medium power transistor [See More]
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SOT223; SOT-223-3
from Newark, An Avnet Company
POWER MOSFET, N CHANNEL, 40V, 20A, DFN5; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:20A; On Resistance Rds(on):0.0031ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes [See More]
- Packing Method: Tape Reel
- Polarity: N-Channel
- Transistor Type: Power Mosfet, N Channel, 40V, 20A, Dfn5; Transistor Polarity On Semiconductor
- rDS(on): 0.0031
from ROHM Semiconductor GmbH
RQ5E035XN is a Small Signal MOSFET featuring low-on resistance and Built-in G-S Protection Diode. It is suitable for switching. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 30
- Polarity: N-Channel
- IDSS: 3500
from Rochester Electronics
BCP53H series - 80V, 1A PNP medium power transistors [See More]
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SC-73
from Newark, An Avnet Company
Power MOSFET, N Channel, 5 A, 650 V, 0.79 ohm, 10 V, 3 V RoHS Compliant: Yes [See More]
- Packing Method: Tape Reel
- Package Type: TO-3; TO-252 (DPAK)
- Polarity: N-Channel
from ROHM Semiconductor GmbH
Power MOSFET RQ6E045BN is suitable for switching power supply. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 30
- Polarity: N-Channel
- IDSS: 4500
from Rochester Electronics
BCX56-16 - 80V, 1A NPN medium power transistor [See More]
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SOT89; SOT-89
from Newark, An Avnet Company
Power MOSFET, N Channel, 6 A, 650 V, 0.594 ohm, 10 V, 4 V RoHS Compliant: Yes [See More]
- Packing Method: Tape Reel
- Package Type: TO-3
- Polarity: N-Channel
from ROHM Semiconductor GmbH
RW4E045AJ is a MOSFET for DC/DC converters, switching, battery switches. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 30
- Polarity: N-Channel
- IDSS: 4500
from Rochester Electronics
BLF0910H9LS600 - LDMOS Power Transistor [See More]
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SOT502
from Newark, An Avnet Company
Power MOSFET, N Channel, 9 A, 650 V, 0.35 ohm, 10 V, 3 V RoHS Compliant: Yes [See More]
- Packing Method: Tape Reel
- Package Type: TO-3
- Polarity: N-Channel
from ROHM Semiconductor GmbH
RJ1G12BGN is a Power MOSFET with Low on - resistance, suitable for Switching. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 40
- Polarity: N-Channel
- IDSS: 120000
from Rochester Electronics
BLF6G22LS-130 - 130W LDMOS power transistor [See More]
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SOT502B
from Newark, An Avnet Company
Power MOSFET, N Channel, 9.2 A, 600 V, 0.41 ohm, 10 V, 3 V RoHS Compliant: Yes [See More]
- Packing Method: Tape Reel
- Package Type: TO-3
- Polarity: N-Channel
from ROHM Semiconductor GmbH
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 60
- Polarity: N-Channel
- IDSS: 2000
from Rochester Electronics
BQ24725 2-4 Cell Li+ Battery SMBus Charge Controller with N-Channel Power MOSFET Selector [See More]
- Packing Method: Tape Reel; Tape & Reel
- Package Type: VQFN20
- Polarity: N-Channel
from Newark, An Avnet Company
POWER MOSFET, P-CH, -8V, -5A, DSBGA-9; Transistor Polarity:P Channel; Continuous Drain Current Id:-5A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700mV; PowerRoHS Compliant: Yes [See More]
- Packing Method: Tape Reel
- rDS(on): 0.0047
- Transistor Type: Power Mosfet, P-Ch, -8V, -5A, Dsbga-9; Transistor Polarity Texas Instruments
- IDSS: -5000
from ROHM Semiconductor GmbH
The surface mount package HP8KA1 is suitable for Load Switch, LiB charging and discharging switch. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 30
- Polarity: N-Channel
- IDSS: 14000
from Rochester Electronics
BSC026N02 - 12V-300V N-Channel Power MOSFET [See More]
- Packing Method: Tape Reel; Tape & Reel
- Package Type: TDSON8
- Polarity: N-Channel
from Newark, An Avnet Company
RF POWER MOSFET, LATERAL N CHANNEL BROADBAND, 40V, 12A, TO-272-6 WRAP, FULL REEL; Drain Source Voltage Vds:40V; Continuous Drain Current Id:12A; Power Dissipation Pd:165W; Operating Frequency Min:135MHz; RF Transistor Case:TO-272 RoHS Compliant: Yes [See More]
- Packing Method: Tape Reel
- IDSS: 12000
- Polarity: N-Channel
- PD: 165000
from ROHM Semiconductor GmbH
Middle power transistor 2SCR542F3 is suitable for Motor driver and LED driver, Power supply. [See More]
- Packing Method: Tape Reel
- IDSS: 3000
- V(BR)DSS: 30
- PD: 1000
from Rochester Electronics
BSL296 - 250V-600V Small Signal/Small Power MOSFET [See More]
- Packing Method: Tape Reel; Tape & Reel
- Package Type: TSOP6
from Newark, An Avnet Company
RF POWER MOSFET, LATERAL N CHANNEL, 130V 600W, NI-1230, FULL REEL; Drain Source Voltage Vds:130V; Continuous Drain Current Id:100mA; Power Dissipation Pd:1.667kW; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; MSL:- RoHS Compliant: Yes [See More]
- Packing Method: Tape Reel
- IDSS: 100
- Polarity: N-Channel
- PD: 1.67E6
from ROHM Semiconductor USA, LLC
The Power MOSFET QS8J13 is suitable for switching power supply. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: -12
- Polarity: P-Channel
- IDSS: -5500
from ROHM Semiconductor USA, LLC
TT8J3 is complex type MOSFET(Pch+Pch) for switching application. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: -30
- Polarity: P-Channel
- IDSS: -2500
from ROHM Semiconductor USA, LLC
UT6JA2 is low on-resistance and small surface mount package MOSFET for switching application. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: -30
- Polarity: P-Channel
- IDSS: -4000
from ROHM Semiconductor USA, LLC
Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: -30
- Polarity: P-Channel
- IDSS: 9000
from ROHM Semiconductor USA, LLC
2SA2071P5 is a power transistor for high speed switching. [See More]
- Packing Method: Tape Reel
- TJ: -55 to 150
- PD: 500
- Package Type: SOT89; SOT-89
from ROHM Semiconductor USA, LLC
Transistor [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 250
- Polarity: N-Channel
- IDSS: 4000
from ROHM Semiconductor USA, LLC
Transistor [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 250
- Polarity: N-Channel
- IDSS: 5000
from ROHM Semiconductor USA, LLC
RUF025N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 20
- Polarity: N-Channel
- IDSS: 2500
from ROHM Semiconductor USA, LLC
RUL035N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 20
- Polarity: N-Channel
- IDSS: 3500
from ROHM Semiconductor USA, LLC
RF4E100AJ is high power small mold package(HUML2020L8) MOSFET for switching and DC/DC converter, battery switch application. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 30
- Polarity: N-Channel
- IDSS: 10000
from ROHM Semiconductor USA, LLC
RQ3E100BN is high power package(HSMT8) MOSFET for switching. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 30
- Polarity: N-Channel
- IDSS: 13500
from ROHM Semiconductor USA, LLC
The small surface mount package RQ5E035BN is suitable for switching. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 30
- Polarity: N-Channel
- IDSS: 3500
from ROHM Semiconductor USA, LLC
Power MOSFET RQ6E045BN is suitable for switching power supply. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 30
- Polarity: N-Channel
- IDSS: 4500
from ROHM Semiconductor USA, LLC
R5007FNX is Power MOSFET for Switching Power Supply. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 500
- Polarity: N-Channel
- IDSS: 7000
from ROHM Semiconductor USA, LLC
R6010MND3 is fast trr power MOSFET, suitable for switching power supply. [See More]
- Packing Method: Tape Reel
- V(BR)DSS: 600
- Polarity: N-Channel
- IDSS: 10000
from ROHM Semiconductor USA, LLC
Middle power transistor 2SCR542F3 is suitable for Motor driver and LED driver, Power supply. [See More]
- Packing Method: Tape Reel
- IDSS: 3000
- V(BR)DSS: 30
- PD: 1000
from ROHM Semiconductor USA, LLC
SST2222AHZG is the high reliability Automotive transistor, suitable for audio frequency small signal amplifier. [See More]
- Packing Method: Tape Reel
- TJ: -55 to 150
- PD: 200
- Package Type: SOT23; SOT-23