Tape Reel Power MOSFET

The Power MOSFET QS8J13 is suitable for switching power supply. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: -12

• Polarity: P-Channel
• I_DSS: -5500

Nexperia 2PD2150 - Power Bipolar Transistor, MPT3 [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: SOT89; SOT-89

N CH POWER MOSFET, STripFET, 200V, 30A, D2PAK, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:30A; On Resistance Rds(on):0.065ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes [See More]

• Packing Method: Tape Reel
• r_DS(on): 0.0650

• Transistor Type: N Ch Power Mosfet, Stripfet, 200V, 30A, D2Pak, Full Reel; Transistor Polarity Stmicroelectronics
• I_DSS: 30000

The UT6J3 is a Small Surface Mount Package MOSFET for switching application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: -20

• Polarity: P-Channel
• I_DSS: -3000

2SA1460 - Power Bipolar Transistor, PNP [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: TO-220; TO-220FM

N CH POWER MOSFET, STripFET, 200V, 5A, DPAK, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:5A; On Resistance Rds(on):0.65ohm; Transistor Mounting:Surface Mount; No. of Pins:2PinsRoHS Compliant: Yes [See More]

• Packing Method: Tape Reel
• r_DS(on): 0.6500

• Transistor Type: N Ch Power Mosfet, Stripfet, 200V, 5A, Dpak, Full Reel; Transistor Polarity Stmicroelectronics
• I_DSS: 5000

Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: -30

• Polarity: P-Channel
• I_DSS: -9000

2SB1578 - Power Bipolar Transistor, 5A, 60V, PNP [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: TO-220; TO-220-3

N CHANNEL POWER MOSFET, 30V, 171A, SO-8FL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:171A; On Resistance Rds(on):0.0013ohm; Transistor Mounting:Surface Mount; Threshold Voltage Vgs:2V RoHS Compliant: Yes [See More]

• Packing Method: Tape Reel
• Polarity: N-Channel

• Transistor Type: N Channel Power Mosfet, 30V, 171A, So-8Fl; Transistor Polarity On Semiconductor
• r_DS(on): 0.0013

HP8M51TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for switching application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 100

• Polarity: N-Channel; P-Channel
• I_DSS: 4500

2SC3365 - Power Bipolar Transistor, 10A, 400V, NPN [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: TO-218

N CHANNEL POWER MOSFET, HEXFET, 30V, 27A, PQFN-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:27A; On Resistance Rds(on):0.0025ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes [See More]

• Packing Method: Tape Reel
• Polarity: N-Channel

• Transistor Type: N Channel Power Mosfet, Hexfet, 30V, 27A, Pqfn-8; Transistor Polarity Infineon
• r_DS(on): 0.0025

The ultra-small package(1006size) RV2C010UN is suitable for portable devices. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 20

• Polarity: N-Channel
• I_DSS: 1000

2SC4003 - NPN Power Transistor [See More]

• Packing Method: Tape Reel; Tape & Reel

N CHANNEL POWER MOSFET, HEXFET, 60V, 270A, D2PAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:270A; On Resistance Rds(on):0.0019ohm; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes [See More]

• Packing Method: Tape Reel
• Polarity: N-Channel

• Transistor Type: N Channel Power Mosfet, Hexfet, 60V, 270A, D2Pak; Transistor Polarity Infineon
• r_DS(on): 0.0019

RJ1U330AAFRG is the high reliability automotive MOSFET, suitable for switching power supply. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 250

• Polarity: N-Channel
• I_DSS: 33000

2SC5292 - Bipolar Power Transistors [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: MP10

N CHANNEL POWER MOSFET, NEXFET, 25V, 100A, SON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:100A; On Resistance Rds(on):0.0019ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes [See More]

• Packing Method: Tape Reel
• Polarity: N-Channel

• Transistor Type: N Channel Power Mosfet, Nexfet, 25V, 100A, Son-8; Transistor Polarity Texas Instruments
• r_DS(on): 0.0019

RD3U041AAFRA is an automotive grade MOSFET that is AEC-Q101 qualified, and suitable for switching applications. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 250

• Polarity: N-Channel
• I_DSS: 4000

2SD1163 - Power Bipolar Transistor, 7A, 150V, NPN [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: CAN3/4

N CHANNEL POWER MOSFET, STripFET, 24V, 280A, POWERSO-10, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:24V; Continuous Drain Current Id:280A; On Resistance Rds(on):800 µohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes [See More]

• Packing Method: Tape Reel
• Polarity: N-Channel

• Transistor Type: N Channel Power Mosfet, Stripfet, 24V, 280A, Powerso-10, Full Reel; Transistor Polarity Stmicroelectronics
• r_DS(on): 8.00E-4

Two MOSFETs of 30V Pch and Nch (common drain configuration) are built in a symmetric dual package. Ideal for switching and motor drive applications. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel; P-Channel
• I_DSS: 7000

2SD1616 - NPN Epitaxial Transistor for Low-Frequency Power Amplifier [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: TO-92; TO-92

P CHANNEL POWER MOSFET, HEXFET, -20V, -2.6A, SOT-23; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.6A; On Resistance Rds(on):0.09ohm; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes [See More]

• Packing Method: Tape Reel
• Polarity: P-Channel

• Transistor Type: P Channel Power Mosfet, Hexfet, -20V, -2.6A, Sot-23; Transistor Polarity Infineon
• r_DS(on): 0.0900

HP8K22 is low on-resistance MOSFET for DC/DC converter. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 27000

2SJ133 - Power Field-Effect Transistor [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: TO-252 (DPAK); TO-252-3

POWER MOSFET 80V SINGLE N CHANNEL ROHS COMPLIANT: YES [See More]

• Packing Method: Tape Reel
• Package Type: TO-3

• Polarity: N-Channel

HS8K1 is standard MOSFET for switching application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 10000

2SK2570 - Power Field-Effect Transistor, 0.2A, 20V, N-Channel MOSFET [See More]

• Packing Method: Tape Reel; Tape & Reel
• Package Type: CPH3

• Polarity: N-Channel

Power MOSFET, N Channel, 1 A, 800 V, 15.5 ohm, 10 V, 5 V RoHS Compliant: Yes [See More]

• Packing Method: Tape Reel
• Package Type: TO-3

• Polarity: N-Channel

BD90302NUF-C are boost MOSFET with drivers for BD8Pxxx Series exclusive use. BD8Pxxx Series is a buck DC/DC Converter with boost function. When used with BD8Pxxx Series, a synchronous buck-boost DC/DC Converter is constituted. [See More]

• Packing Method: Tape Reel
• Package Type: VSON10FV3030 (Wettable Flank)

• T_J: -55 to 150
• Transistor Grade / Operating Range: Commercial

2SK3816 - Power Field-Effect Transistor, N-Channel, MOSFET [See More]

• Packing Method: Tape Reel; Tape & Reel
• Package Type: SC-88/SC70-6/SOT-363 6

• Polarity: N-Channel

POWER MOSFET, N CHANNEL, 10A, TO-252-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.37ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes [See More]

• Packing Method: Tape Reel
• Polarity: N-Channel

• Transistor Type: Power Mosfet, N Channel, 10A, To-252-3; Transistor Polarity Stmicroelectronics
• r_DS(on): 0.3700

R6002END3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 600

• Polarity: N-Channel
• I_DSS: 2000

2SK4065 - N-Channel Power MOSFET, 75V, 100A, TO-263-2L [See More]

• Packing Method: Tape Reel; Tape & Reel
• Package Type: D2PAK

• Polarity: N-Channel

Power MOSFET, N Channel, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V RoHS Compliant: Yes [See More]

• Packing Method: Tape Reel
• Package Type: TO-3

• Polarity: N-Channel

RJ1P12BBD is a Power MOSFET with Low on - resistance, suitable for Switching. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 100

• Polarity: N-Channel
• I_DSS: 120000

74AUP1Z04 - Low-power X-tal driver with enable and internal transistor [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: X2SON6

Power MOSFET, N Channel, 16.4 A, 650 V, 0.18 ohm, 10 V, 3 V RoHS Compliant: Yes [See More]

• Packing Method: Tape Reel
• Package Type: TO-3

• Polarity: N-Channel

RQ3P300BH is a power MOSFET with low on - resistance, suitable for switching. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 100

• Polarity: N-Channel
• I_DSS: 39000

A2I25D025N - Airfast RF Power LDMOS Transistor, 2300-2690 MHz [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: FM17F

POWER MOSFET, N CHANNEL, 20A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:900V; On Resistance Rds(on):0.21ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes [See More]

• Packing Method: Tape Reel
• Polarity: N-Channel

• Transistor Type: Power Mosfet, N Channel, 20A, To-263-3; Transistor Polarity Stmicroelectronics
• r_DS(on): 0.2100

RS1P600BE is a power MOSFET with low on - resistance, suitable for DC/DC converters. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 100

• Polarity: N-Channel
• I_DSS: 60000

Nexperia BC52PAS - 60V, 1 A PNP medium power transistors [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: HUSON3

POWER MOSFET, N CHANNEL, 22.5A, PWRFLAT; Transistor Polarity:N Channel; Continuous Drain Current Id:22.5A; Drain Source Voltage Vds:550V; On Resistance Rds(on):0.066ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes [See More]

• Packing Method: Tape Reel
• Polarity: N-Channel

• Transistor Type: Power Mosfet, N Channel, 22.5A, Pwrflat; Transistor Polarity Stmicroelectronics
• r_DS(on): 0.0660

RUF025N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 20

• Polarity: N-Channel
• I_DSS: 2500

BC869 - PNP medium power transistor [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: SOT89

Power MOSFET, N Channel, 33 A, 600 V, 0.083 ohm, 10 V, 2 V RoHS Compliant: Yes [See More]

• Packing Method: Tape Reel
• Package Type: TO-3

• Polarity: N-Channel

RUL035N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 20

• Polarity: N-Channel
• I_DSS: 3500

BCP51-10T - 45 V, 1 A PNP medium power transistors [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: SOT223

Power MOSFET, N Channel, 4 A, 650 V, 1.2 ohm, 10 V, 3 V RoHS Compliant: Yes [See More]

• Packing Method: Tape Reel
• Package Type: TO-3

• Polarity: N-Channel

RF4E100AJ is high power small mold package(HUML2020L8) MOSFET for switching and DC/DC converter, battery switch application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 10000

BCP52-10 - 60V, 1A PNP medium power transistor [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: SOT223; SOT-223-3

POWER MOSFET, N CHANNEL, 40V, 20A, DFN5; Transistor Polarity:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:20A; On Resistance Rds(on):0.0031ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes [See More]

• Packing Method: Tape Reel
• Polarity: N-Channel

• Transistor Type: Power Mosfet, N Channel, 40V, 20A, Dfn5; Transistor Polarity On Semiconductor
• r_DS(on): 0.0031

RQ5E035XN is a Small Signal MOSFET featuring low-on resistance and Built-in G-S Protection Diode. It is suitable for switching. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 3500

BCP53H series - 80V, 1A PNP medium power transistors [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: SC-73

Power MOSFET, N Channel, 5 A, 650 V, 0.79 ohm, 10 V, 3 V RoHS Compliant: Yes [See More]

• Packing Method: Tape Reel
• Package Type: TO-3; TO-252 (DPAK)

• Polarity: N-Channel

Power MOSFET RQ6E045BN is suitable for switching power supply. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 4500

BCX56-16 - 80V, 1A NPN medium power transistor [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: SOT89; SOT-89

Power MOSFET, N Channel, 6 A, 650 V, 0.594 ohm, 10 V, 4 V RoHS Compliant: Yes [See More]

• Packing Method: Tape Reel
• Package Type: TO-3

• Polarity: N-Channel

RW4E045AJ is a MOSFET for DC/DC converters, switching, battery switches. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 4500

BLF0910H9LS600 - LDMOS Power Transistor [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: SOT502

Power MOSFET, N Channel, 9 A, 650 V, 0.35 ohm, 10 V, 3 V RoHS Compliant: Yes [See More]

• Packing Method: Tape Reel
• Package Type: TO-3

• Polarity: N-Channel

RJ1G12BGN is a Power MOSFET with Low on - resistance, suitable for Switching. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 40

• Polarity: N-Channel
• I_DSS: 120000

BLF6G22LS-130 - 130W LDMOS power transistor [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: SOT502B

Power MOSFET, N Channel, 9.2 A, 600 V, 0.41 ohm, 10 V, 3 V RoHS Compliant: Yes [See More]

• Packing Method: Tape Reel
• Package Type: TO-3

• Polarity: N-Channel

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 60

• Polarity: N-Channel
• I_DSS: 2000

BQ24725 2-4 Cell Li+ Battery SMBus Charge Controller with N-Channel Power MOSFET Selector [See More]

• Packing Method: Tape Reel; Tape & Reel
• Package Type: VQFN20

• Polarity: N-Channel

POWER MOSFET, P-CH, -8V, -5A, DSBGA-9; Transistor Polarity:P Channel; Continuous Drain Current Id:-5A; Drain Source Voltage Vds:-8V; On Resistance Rds(on):0.0047ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-700mV; PowerRoHS Compliant: Yes [See More]

• Packing Method: Tape Reel
• r_DS(on): 0.0047

• Transistor Type: Power Mosfet, P-Ch, -8V, -5A, Dsbga-9; Transistor Polarity Texas Instruments
• I_DSS: -5000

The surface mount package HP8KA1 is suitable for Load Switch, LiB charging and discharging switch. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 14000

BSC026N02 - 12V-300V N-Channel Power MOSFET [See More]

• Packing Method: Tape Reel; Tape & Reel
• Package Type: TDSON8

• Polarity: N-Channel

RF POWER MOSFET, LATERAL N CHANNEL BROADBAND, 40V, 12A, TO-272-6 WRAP, FULL REEL; Drain Source Voltage Vds:40V; Continuous Drain Current Id:12A; Power Dissipation Pd:165W; Operating Frequency Min:135MHz; RF Transistor Case:TO-272 RoHS Compliant: Yes [See More]

• Packing Method: Tape Reel
• I_DSS: 12000

• Polarity: N-Channel
• P_D: 165000

Middle power transistor 2SCR542F3 is suitable for Motor driver and LED driver, Power supply. [See More]

• Packing Method: Tape Reel
• I_DSS: 3000

• V_(BR)DSS: 30
• P_D: 1000

BSL296 - 250V-600V Small Signal/Small Power MOSFET [See More]

• Packing Method: Tape Reel; Tape & Reel

• Package Type: TSOP6

RF POWER MOSFET, LATERAL N CHANNEL, 130V 600W, NI-1230, FULL REEL; Drain Source Voltage Vds:130V; Continuous Drain Current Id:100mA; Power Dissipation Pd:1.667kW; Operating Frequency Min:1.8MHz; Operating Frequency Max:600MHz; MSL:- RoHS Compliant: Yes [See More]

• Packing Method: Tape Reel
• I_DSS: 100

• Polarity: N-Channel
• P_D: 1.67E6

The Power MOSFET QS8J13 is suitable for switching power supply. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: -12

• Polarity: P-Channel
• I_DSS: -5500

TT8J3 is complex type MOSFET(Pch+Pch) for switching application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: -30

• Polarity: P-Channel
• I_DSS: -2500

UT6JA2 is low on-resistance and small surface mount package MOSFET for switching application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: -30

• Polarity: P-Channel
• I_DSS: -4000

Complex type MOSFETs(P+P) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: -30

• Polarity: P-Channel
• I_DSS: 9000

2SA2071P5 is a power transistor for high speed switching. [See More]

• Packing Method: Tape Reel
• T_J: -55 to 150

• P_D: 500
• Package Type: SOT89; SOT-89

Transistor [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 250

• Polarity: N-Channel
• I_DSS: 4000

Transistor [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 250

• Polarity: N-Channel
• I_DSS: 5000

RUF025N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 20

• Polarity: N-Channel
• I_DSS: 2500

RUL035N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 20

• Polarity: N-Channel
• I_DSS: 3500

RF4E100AJ is high power small mold package(HUML2020L8) MOSFET for switching and DC/DC converter, battery switch application. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 10000

RQ3E100BN is high power package(HSMT8) MOSFET for switching. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 13500

The small surface mount package RQ5E035BN is suitable for switching. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 3500

Power MOSFET RQ6E045BN is suitable for switching power supply. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 30

• Polarity: N-Channel
• I_DSS: 4500

R5007FNX is Power MOSFET for Switching Power Supply. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 500

• Polarity: N-Channel
• I_DSS: 7000

R6010MND3 is fast trr power MOSFET, suitable for switching power supply. [See More]

• Packing Method: Tape Reel
• V_(BR)DSS: 600

• Polarity: N-Channel
• I_DSS: 10000

Middle power transistor 2SCR542F3 is suitable for Motor driver and LED driver, Power supply. [See More]

• Packing Method: Tape Reel
• I_DSS: 3000

• V_(BR)DSS: 30
• P_D: 1000

SST2222AHZG is the high reliability Automotive transistor, suitable for audio frequency small signal amplifier. [See More]

• Packing Method: Tape Reel
• T_J: -55 to 150

• P_D: 200
• Package Type: SOT23; SOT-23