N-Channel Power MOSFET

Target Applications: - Battery Protection. - Load Switch High Side. - Load Switch Low Side [See More]

• Polarity: N-Channel
• Package Type: SO-8; SO-8

• Q_G: 130

SP8K52HZG is an automotive grade MOSFET that is AEC-Q101 qualified. Two Nch 100V MOSFETs are included in the SOP8 package. Built-in ESD protection diode. Ideal for switching applications. [See More]

• Polarity: N-Channel
• I_DSS: 3000

• V_(BR)DSS: 100
• Q_G: 8.5

2N6760 - 5.5A, 400V, 1ohm, N-Channel, POWER MOSFET [See More]

• Polarity: N-Channel
• Package Type: TO-204AA

• r_DS(on): 1

N-Channel NexFET? Power MOSFET 4-DSBGA -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0340

• V_(BR)DSS: 12
• I_DSS: 20200

HF/VHF POWER MOSFET, N CHANNEL, 125V, 16A, SOT-121B; Drain Source Voltage Vds:125V; Continuous Drain Current Id:16A; Power Dissipation Pd:220W; Operating Frequency Min:-; Operating Frequency Max:-; RF Transistor Case:-; MSL:- RoHS Compliant: Yes [See More]

• Polarity: N-Channel
• P_D: 220000

• I_DSS: 16000
• Package Type: TO-3

Target Applications: - Battery Protection. - Isolated Primary Side MOSFETs. - Isolated Secondary Side SyncRec MOSFETs. - Load Switch High Side. - Load Switch Low Side. - Point of Load ControlFET [See More]

• Polarity: N-Channel
• Package Type: PQFN 3.3 x 3.3 B/G

• Q_G: 15

HP8M51TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for switching application. [See More]

• Polarity: N-Channel; P-Channel
• I_DSS: 4500

• V_(BR)DSS: 100
• Q_G: 8.5

2N6787 - Power Field-Effect Transistor, N-Channel, MOSFET [See More]

• Polarity: N-Channel

• Package Type: CAN3/4

N-Channel Power MOSFET, CSD13202Q2, 12V Vds, 9.3mohm Rdson4.5 (max) 6-WSON -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0093

• V_(BR)DSS: 12
• I_DSS: 76000

N CHANNEL POLAR POWER MOSFET, HiPerFET, 900V, 12A, TO247; Transistor Polarity:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:12A; On Resistance Rds(on):0.9ohm; Transistor Mounting:Through Hole; Product Range:- RoHS Compliant: Yes [See More]

• Polarity: N-Channel
• r_DS(on): 0.9000

• Transistor Type: N Channel Polar Power Mosfet, Hiperfet, 900V, 12A, To247; Transistor Polarity Ixys Semiconductor
• I_DSS: 12000

Home MOSFET, 20V-100V N-Channel Small Power MOSFET [See More]

• Polarity: N-Channel
• Package Type: PQFN 3.3 x 3.3 E

• Q_G: 15

Discrete Semiconductors, MOSFETs, 190 to 800V Power MOSFETs, Nch 190 to 250V MOSFETs [See More]

• Polarity: N-Channel
• I_DSS: 5000

• V_(BR)DSS: 250
• Q_G: 9

2SK1060 - Power Field-Effect Transistor, 5A, 100V, N-Channel MOSFET [See More]

• Polarity: N-Channel

• Package Type: TO-220; TO-220-3

N-Channel NexFET? Power MOSFET 6-DSBGA -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0200

• V_(BR)DSS: 12
• I_DSS: 31000

N CHANNEL POLAR POWER MOSFET, HiPerFET, 900V, 52A, PLUS264; Transistor Polarity:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:52A; On Resistance Rds(on):0.16ohm; Transistor Mounting:Through Hole; MSL:- RoHS Compliant: Yes [See More]

• Polarity: N-Channel
• r_DS(on): 0.1600

• Transistor Type: N Channel Polar Power Mosfet, Hiperfet, 900V, 52A, Plus264; Transistor Polarity Ixys Semiconductor
• I_DSS: 52000

Target Applications: - Battery Protection. - DC Switches. - Isolated Primary Side MOSFETs. - Isolated Secondary Side SyncRec MOSFETs. - Load Switch. - Load Switch High Side. - Load Switch Low Side. - Point of Load ControlFET [See More]

• Polarity: N-Channel
• Package Type: PQFN 2 x 2

• Q_G: 8.7

The ultra-small package(1006size) RV2C010UN is suitable for portable devices. [See More]

• Polarity: N-Channel
• I_DSS: 1000

• V_(BR)DSS: 20
• P_D: 400

2SK1152 - Power Field-Effect Transistor, 1.5A, 500V, N-Channel MOSFET [See More]

• Polarity: N-Channel

• Package Type: DPAK3

20-V N-Channel NexFET? Power MOSFET 6-WSON -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0192

• V_(BR)DSS: 20
• I_DSS: 22000

N CHANNEL POWER MOSFET, 30V, 171A, SO-8FL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:171A; On Resistance Rds(on):0.0013ohm; Transistor Mounting:Surface Mount; Threshold Voltage Vgs:2V RoHS Compliant: Yes [See More]

• Polarity: N-Channel
• r_DS(on): 0.0013

• Transistor Type: N Channel Power Mosfet, 30V, 171A, So-8Fl; Transistor Polarity On Semiconductor
• I_DSS: 171000

Target Applications: - Battery Protection. - DC Switches. - Load Switch. - Load Switch High Side. - Load Switch Low Side [See More]

• Polarity: N-Channel
• Package Type: SOT23; SOT-23

• Q_G: 5.4

UT6MA3 is Low on-resistance Middle Power MOSFET for switching application. [See More]

• Polarity: N-Channel; P-Channel
• I_DSS: 5500

• V_(BR)DSS: 20
• Q_G: 4

2SK1154 - Power Field-Effect Transistor, 3A, 500V, N-Channel MOSFET [See More]

• Polarity: N-Channel
• Packing Method: Tube; Tube

• Package Type: CAN3/4

N-Channel NexFET? Power MOSFET 6-WSON -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0290

• V_(BR)DSS: 25
• I_DSS: 20000

N CHANNEL POWER MOSFET, HEXFET, 150V, 33A, DPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:33A; On Resistance Rds(on):0.034ohm; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes [See More]

• Polarity: N-Channel
• r_DS(on): 0.0340

• Transistor Type: N Channel Power Mosfet, Hexfet, 150V, 33A, Dpak; Transistor Polarity Infineon
• I_DSS: 33000

Target Applications: - Battery Protection. - DC Switches. - Load Switch. - Load Switch High Side. - Load Switch Low Side [See More]

• Polarity: N-Channel
• Package Type: TSOP-6

• Q_G: 4.8

RJ1U330AAFRG is the high reliability automotive MOSFET, suitable for switching power supply. [See More]

• Polarity: N-Channel
• I_DSS: 33000

• V_(BR)DSS: 250
• Q_G: 80

2SK1165 - Power Field-Effect Transistor, 12A, 450V, N-Channel MOSFET [See More]

• Polarity: N-Channel
• Packing Method: Tube; Tube

• Package Type: TO-218

N-Channel NexFET ™ Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0026

• V_(BR)DSS: 25
• I_DSS: 200000

N CHANNEL POWER MOSFET, HEXFET, 30V, 27A, PQFN-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:27A; On Resistance Rds(on):0.0025ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes [See More]

• Polarity: N-Channel
• r_DS(on): 0.0025

• Transistor Type: N Channel Power Mosfet, Hexfet, 30V, 27A, Pqfn-8; Transistor Polarity Infineon
• I_DSS: 27000

Target Applications: - DC Switches. - Load Switch [See More]

• Polarity: N-Channel
• Package Type: PQFN 2 x 2

• Q_G: 2.8

RD3U041AAFRA is an automotive grade MOSFET that is AEC-Q101 qualified, and suitable for switching applications. [See More]

• Polarity: N-Channel
• I_DSS: 4000

• V_(BR)DSS: 250
• Q_G: 8.5

2SK1313 - Power Field-Effect Transistor, 5A, 450V, N-Channel MOSFET [See More]

• Polarity: N-Channel

• Package Type: LDPAK3

DualCool? N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0026

• V_(BR)DSS: 25
• I_DSS: 200000

N CHANNEL POWER MOSFET, HEXFET, 60V, 270A, D2PAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:270A; On Resistance Rds(on):0.0019ohm; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes [See More]

• Polarity: N-Channel
• r_DS(on): 0.0019

• Transistor Type: N Channel Power Mosfet, Hexfet, 60V, 270A, D2Pak; Transistor Polarity Infineon
• I_DSS: 270000

The 150V OptiMOS ™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS ™... [See More]

• Polarity: N-Channel
• Package Type: CanPAK

• Q_G: 26

Two MOSFETs of 30V Pch and Nch (common drain configuration) are built in a symmetric dual package. Ideal for switching and motor drive applications. [See More]

• Polarity: N-Channel; P-Channel
• I_DSS: 7000

• V_(BR)DSS: 30
• Q_G: 4.7

2SK1315 - Power Field-Effect Transistor, 8A, 450V, N-Channel MOSFET [See More]

• Polarity: N-Channel
• Packing Method: Tube; Tube

• Package Type: IPAK-3

N-Channel NexFET ™ Power MOSFETs 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0058

• V_(BR)DSS: 25
• I_DSS: 136000

N CHANNEL POWER MOSFET, LINEAR L2, 500V, 15A, TO-220; Transistor Polarity:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:15A; On Resistance Rds(on):0.48ohm; Transistor Mounting:Through Hole; No. of Pins:3Pins RoHS Compliant: Yes [See More]

• Polarity: N-Channel
• r_DS(on): 0.4800

• Transistor Type: N Channel Power Mosfet, Linear L2, 500V, 15A, To-220; Transistor Polarity Ixys Semiconductor
• I_DSS: 15000

Home MOSFET, 20V-300V N-Channel Power MOSFET, 120V-300V N-Channel Power MOSFET [See More]

• Polarity: N-Channel
• Package Type: TO-220; TO-220

• Q_G: 180

HP8K22 is low on-resistance MOSFET for DC/DC converter. [See More]

• Polarity: N-Channel
• I_DSS: 27000

• V_(BR)DSS: 30
• Q_G: 4.8

2SK1461 - 5A, 900V, 3.6ohm, N-Channel Power MOSFET, TO-218 [See More]

• Polarity: N-Channel
• Package Type: TO-218

• r_DS(on): 3.6

DualCool? N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0058

• V_(BR)DSS: 25
• I_DSS: 136000

N CHANNEL POWER MOSFET, LINEAR L2, 500V, 40A, TO-3P; Transistor Polarity:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:40A; On Resistance Rds(on):0.17ohm; Transistor Mounting:Through Hole; No. of Pins:3Pins RoHS Compliant: Yes [See More]

• Polarity: N-Channel
• r_DS(on): 0.1700

• Transistor Type: N Channel Power Mosfet, Linear L2, 500V, 40A, To-3P; Transistor Polarity Ixys Semiconductor
• I_DSS: 40000

Home MOSFET, 20V-300V N-Channel Power MOSFET, 120V-300V N-Channel Power MOSFET [See More]

• Polarity: N-Channel
• Package Type: TO-263; D2PAK 7pin (TO-263 7pin)

• Q_G: 210

The Middle Power MOSFET QH8KA4 is suitable for switching and battery applications. [See More]

• Polarity: N-Channel
• I_DSS: 9000

• V_(BR)DSS: 30
• Q_G: 12

2SK1566 - Power Field-Effect Transistor, 7A, 450V, N-Channel MOSFET [See More]

• Polarity: N-Channel
• Packing Method: Tube; Tube

• Package Type: FULLPAK220

N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0055

• V_(BR)DSS: 25
• I_DSS: 112000

N CHANNEL POWER MOSFET, LINEAR L2, 500V, 53A, SOT-227B; Transistor Polarity:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:53A; On Resistance Rds(on):0.1ohm; Transistor Mounting:Module; No. of Pins:4Pins; MSL:-RoHS Compliant: Yes [See More]

• Polarity: N-Channel
• r_DS(on): 0.1000

• Transistor Type: N Channel Power Mosfet, Linear L2, 500V, 53A, Sot-227B; Transistor Polarity Ixys Semiconductor
• I_DSS: 53000

Home MOSFET, 20V-300V N-Channel Power MOSFET, 120V-300V N-Channel Power MOSFET [See More]

• Polarity: N-Channel
• Package Type: TO-220; TO-220

• Q_G: 15.3

HS8K1 is standard MOSFET for switching application. [See More]

• Polarity: N-Channel
• I_DSS: 10000

• V_(BR)DSS: 30
• Q_G: 2.7

2SK2498 - Switching N-Channel Power MOSFET [See More]

• Polarity: N-Channel
• Packing Method: Bag

• Package Type: TO-220; TO-220-3FP

Dual Cool N-Channel NexFET Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0055

• V_(BR)DSS: 25
• I_DSS: 112000

N CHANNEL POWER MOSFET, NEXFET, 25V, 100A, SON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:100A; On Resistance Rds(on):0.0019ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes [See More]

• Polarity: N-Channel
• r_DS(on): 0.0019

• Transistor Type: N Channel Power Mosfet, Nexfet, 25V, 100A, Son-8; Transistor Polarity Texas Instruments
• I_DSS: 100000

Target Applications: - UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits [See More]

• Polarity: N-Channel
• Package Type: TO-247; TO-247

• Q_G: 135

R6015KNZ is Low on-resistance and ultra fast switching speed Power MOSFET, suitable for the switching application. [See More]

• Polarity: N-Channel
• I_DSS: 15000

• V_(BR)DSS: 600
• Q_G: 27.5

2SK2530 - New H-Iif (Frd Built-In), 250V, N-Channel Ap Lineup Power MOSFET [See More]

• Polarity: N-Channel

• Package Type: D2PAK

N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0022

• V_(BR)DSS: 25
• I_DSS: 200000

N CHANNEL POWER MOSFET, STripFET, 24V, 280A, POWERSO-10, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:24V; Continuous Drain Current Id:280A; On Resistance Rds(on):800 µohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes [See More]

• Polarity: N-Channel
• r_DS(on): 8.00E-4

• Transistor Type: N Channel Power Mosfet, Stripfet, 24V, 280A, Powerso-10, Full Reel; Transistor Polarity Stmicroelectronics
• I_DSS: 280000

Home MOSFET, 20V-300V N-Channel Power MOSFET, 120V-300V N-Channel Power MOSFET [See More]

• Polarity: N-Channel
• Package Type: TO-263; D2PAK (TO-263)

• Q_G: 63.3

R6020KNZ4 is a power MOSFET for switching applications. [See More]

• Polarity: N-Channel
• I_DSS: 20000

• V_(BR)DSS: 600
• Q_G: 40

2SK2570 - Power Field-Effect Transistor, 0.2A, 20V, N-Channel MOSFET [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: CPH3

DualCool? N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0022

• V_(BR)DSS: 25
• I_DSS: 200000

N CHANNEL POWER MOSFET, STripFET, 60V, 30A, TO-220FP; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:30A; On Resistance Rds(on):0.014ohm; Transistor Mounting:Through Hole; No. of Pins:3Pins RoHS Compliant: Yes [See More]

• Polarity: N-Channel
• r_DS(on): 0.0140

• Transistor Type: N Channel Power Mosfet, Stripfet, 60V, 30A, To-220Fp; Transistor Polarity Stmicroelectronics
• I_DSS: 30000

Target Applications: - Battery Operated Drive. - Class D Audio. - Load Switch High Side [See More]

• Polarity: N-Channel
• Package Type: DirectFET MZ

• Q_G: 34

R6002END3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application. [See More]

• Polarity: N-Channel
• I_DSS: 2000

• V_(BR)DSS: 600
• Q_G: 6.5

Power Field-Effect Transistor, N-Channel, MOSFET [See More]

• Polarity: N-Channel

• Package Type: FULLPAK220

N-Channel NexFET Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0048

• V_(BR)DSS: 25
• I_DSS: 112000

POWER MOSFET 80V SINGLE N CHANNEL ROHS COMPLIANT: YES [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel

• Package Type: TO-3

Target Applications: - Battery Operated Drive. - Isolated Primary Side MOSFETs. - Isolated Secondary Side SyncRec MOSFETs. - Load Switch High Side [See More]

• Polarity: N-Channel
• Package Type: DirectFET L8

• Q_G: 97

The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits. [See More]

• Polarity: N-Channel
• I_DSS: 15000

• V_(BR)DSS: 650
• Q_G: 27.5

2SK3816 - Power Field-Effect Transistor, N-Channel, MOSFET [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: SC-88/SC70-6/SOT-363 6

25V, N Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0055

• V_(BR)DSS: 25
• I_DSS: 115000

Power MOSFET, N Channel, 1 A, 600 V, 9.3 ohm, 10 V, 2 V RoHS Compliant: Yes [See More]

• Polarity: N-Channel

• Package Type: TO-3

Home MOSFET, 20V-300V N-Channel Power MOSFET, 120V-300V N-Channel Power MOSFET [See More]

• Polarity: N-Channel
• Package Type: Super-220 (TO-273)

• Q_G: 160

RJ1P12BBD is a Power MOSFET with Low on - resistance, suitable for Switching. [See More]

• Polarity: N-Channel
• I_DSS: 120000

• V_(BR)DSS: 100
• Q_G: 51

2SK4066 - Power Field-Effect Transistor, N-Channel, MOSFET [See More]

• Polarity: N-Channel
• Packing Method: Tube; Tube

• Package Type: IPAK-3

N-Channel NexFET? Power MOSFET.... 8-VSONP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0055

• V_(BR)DSS: 25
• I_DSS: 131000

Power MOSFET, N Channel, 1 A, 800 V, 15.5 ohm, 10 V, 5 V RoHS Compliant: Yes [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel

• Package Type: TO-3

Target Applications: - Battery Operated Drive. - Isolated Primary Side MOSFETs. - Isolated Secondary Side SyncRec MOSFETs [See More]

• Polarity: N-Channel
• Package Type: PQFN 5 x 6 B/G

• Q_G: 33

RQ3P300BH is a power MOSFET with low on - resistance, suitable for switching. [See More]

• Polarity: N-Channel
• I_DSS: 39000

• V_(BR)DSS: 100
• Q_G: 18

2SK4070-ZK - Switching N-Channel Power Mosfet [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel; Embossed Tape

• Package Type: MP-3ZK-3

N-Channel NexFET ™ Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0023

• V_(BR)DSS: 25
• I_DSS: 240000

Power MOSFET, N Channel, 1.85 A, 1 kV, 6.25 ohm, 10 V, 3.75 V RoHS Compliant: Yes [See More]

• Polarity: N-Channel

• Package Type: TO-3

Target Applications: - Class D Audio [See More]

• Polarity: N-Channel
• Package Type: TO-220; TO-220-5 FP

• Q_G: 13

RS1P600BE is a power MOSFET with low on - resistance, suitable for DC/DC converters. [See More]

• Polarity: N-Channel
• I_DSS: 60000

• V_(BR)DSS: 100
• Q_G: 33

2SK4150TZ - N-Channel Power MOSFET 250V, 0.4A [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: TO-92; TO-92-3

N-Channel NexFET ™ Power MOSFET 8-VSONP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0037

• V_(BR)DSS: 25
• I_DSS: 184000

POWER MOSFET, N CHANNEL, 10A, TO-220FP-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.37ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes [See More]

• Polarity: N-Channel
• r_DS(on): 0.3700

• Transistor Type: Power Mosfet, N Channel, 10A, To-220Fp-3; Transistor Polarity Stmicroelectronics
• I_DSS: 10000

Home MOSFET, 20V-300V N-Channel Power MOSFET, 120V-300V N-Channel Power MOSFET [See More]

• Polarity: N-Channel
• Package Type: TO-220; TO-220-3 FP

• Q_G: 73

RUF025N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

• Polarity: N-Channel
• I_DSS: 2500

• V_(BR)DSS: 20
• Q_G: 5

2SK4197 - Power Field-Effect Transistor, N-Channel, MOSFET [See More]

• Polarity: N-Channel
• Packing Method: Tube; Tube

• Package Type: TO-220; TO-220-3FP

N-Channel NexFET ™ Power MOSFET 8-VSONP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0072

• V_(BR)DSS: 25
• I_DSS: 135000

Power MOSFET, N Channel, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V RoHS Compliant: Yes [See More]

• Polarity: N-Channel

• Package Type: TO-3

Target Applications: - Battery Operated Drive. - Consumer Full-Bridge. - Full-Bridge. - Push-Pull [See More]

• Polarity: N-Channel
• Package Type: TO-247; TO-247

• Q_G: 180

RUL035N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

• Polarity: N-Channel
• I_DSS: 3500

• V_(BR)DSS: 20
• Q_G: 5.7

2SK681 - Power Field-Effect Transistor, N-Channel MOSFET [See More]

• Polarity: N-Channel
• Packing Method: Bag

• Package Type: SP8

N-Channel NexFET ™ Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0074

• V_(BR)DSS: 25
• I_DSS: 114000

Power MOSFET, N Channel, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V RoHS Compliant: Yes [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel

• Package Type: TO-3

Home MOSFET, 20V-300V N-Channel Power MOSFET, 120V-300V N-Channel Power MOSFET [See More]

• Polarity: N-Channel
• Package Type: Super-247 (TO-274)

• Q_G: 260

RF4E100AJ is high power small mold package(HUML2020L8) MOSFET for switching and DC/DC converter, battery switch application. [See More]

• Polarity: N-Channel
• I_DSS: 10000

• V_(BR)DSS: 30
• Q_G: 13

3N206 - N-Channel, POWER MOSFET [See More]

• Polarity: N-Channel

• Package Type: TO-72

N-Channel NexFET ™ Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0033

• V_(BR)DSS: 25
• I_DSS: 200000

Power MOSFET, N Channel, 13 A, 1 kV, 700 mohm, 10 V, 3.75 V RoHS Compliant: No [See More]

• Polarity: N-Channel

• Package Type: TO-3

Home MOSFET, 20V-300V N-Channel Power MOSFET, 120V-300V N-Channel Power MOSFET [See More]

• Polarity: N-Channel
• Package Type: TO-252 (DPAK); DPAK (TO-252)

• Q_G: 19

RQ5E035XN is a Small Signal MOSFET featuring low-on resistance and Built-in G-S Protection Diode. It is suitable for switching. [See More]

• Polarity: N-Channel
• I_DSS: 3500

• V_(BR)DSS: 30
• Q_G: 3.3

BF5020 - Power Field-Effect Transistor, N-Channel, MOSFET [See More]

• Polarity: N-Channel

• Package Type: SOT343

DualCool? N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0033

• V_(BR)DSS: 25
• I_DSS: 200000

Power MOSFET, N Channel, 15 A, 600 V, 0.23 ohm, 10 V, 2 V RoHS Compliant: Yes [See More]

• Polarity: N-Channel

• Package Type: TO-3; TO-252 (DPAK)

Target Applications: - Battery Operated Drive. - Lighting LED [See More]

• Polarity: N-Channel
• Package Type: TO-252 (DPAK); DPAK (TO-252)

• Q_G: 25

Power MOSFET RQ6E045BN is suitable for switching power supply. [See More]

• Polarity: N-Channel
• I_DSS: 4500

• V_(BR)DSS: 30
• Q_G: 8.4

BQ24725 2-4 Cell Li+ Battery SMBus Charge Controller with N-Channel Power MOSFET Selector [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: VQFN20

N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0068

• V_(BR)DSS: 25
• I_DSS: 141000

Power MOSFET, N Channel, 16.4 A, 650 V, 0.18 ohm, 10 V, 3 V RoHS Compliant: Yes [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel

• Package Type: TO-3

Target Applications: - Battery Operated Drive [See More]

• Polarity: N-Channel
• Package Type: TO-263; D2PAK 7pin (TO-263 7pin)

• Q_G: 73

RW4E045AJ is a MOSFET for DC/DC converters, switching, battery switches. [See More]

• Polarity: N-Channel
• I_DSS: 4500

• V_(BR)DSS: 30
• Q_G: 4

BSC026N02 - 12V-300V N-Channel Power MOSFET [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: TDSON8

DualCool? N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0068

• V_(BR)DSS: 25
• I_DSS: 141000

POWER MOSFET, N CHANNEL, 18A, TO-262-3; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.19ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes [See More]

• Polarity: N-Channel
• r_DS(on): 0.1900

• Transistor Type: Power Mosfet, N Channel, 18A, To-262-3; Transistor Polarity Stmicroelectronics
• I_DSS: 18000

Target Applications: - Battery Operated Drive [See More]

• Polarity: N-Channel
• Package Type: TO-263; D2PAK (TO-263)

• Q_G: 25

RJ1G12BGN is a Power MOSFET with Low on - resistance, suitable for Switching. [See More]

• Polarity: N-Channel
• I_DSS: 120000

• V_(BR)DSS: 40
• Q_G: 82

BSO083N03 - OptlMOS N-Channel Power MOSFET [See More]

• Polarity: N-Channel

• Package Type: SOIC8

N-Channel NexFET ™ Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0124

• V_(BR)DSS: 25
• I_DSS: 90000

Power MOSFET, N Channel, 2 A, 600 V, 4.4 ohm, 10 V, 4 V RoHS Compliant: Yes [See More]

• Polarity: N-Channel

• Package Type: TO-3

20V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE [See More]

• Polarity: N-Channel
• r_DS(on): 0.1000

• V_(BR)DSS: 20
• P_D: 2000

Self-Aligning Silicon Gate Sturcture. Low Transfer Capacitance - 0.2 pF typ. Low Input Capacitance - 2.4 pF typ. Low Output Capacitance - 1.3 pF typ. Low Gate Threadhold Voltage - 0.6V typ. [See More]

• Polarity: N-Channel
• Type: LDMOSFET

• Operating Mode: Enhancement
• V_(BR)DSS: 25

SP8K52FRA is the high reliability Automotive transistor, suitable for switching applications and motor drive. [See More]

• Polarity: N-Channel
• I_DSS: 3000

• V_(BR)DSS: 100
• Q_G: 8.5

Features: Rugged poly-Si gate. Lowest ON-resistance in the Industry. Avalanche rated. Hermetically Sealed, Isolated Package. Low Total Gate Charge. Fast Switching. Improved (RDS(ON) QG) Figure of Merit. Class H, K Screening Available. Consult Factory for Special Requirements such as Builtin Zener... [See More]

• Polarity: N-Channel
• r_DS(on): 318 to 340

• V_(BR)DSS: 1000
• I_DSS: 7.5 to 12

Karl Kruse  is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop... [See More]

• Polarity: N-Channel

20V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE [See More]

• Polarity: N-Channel
• r_DS(on): 0.0500

• V_(BR)DSS: 20
• P_D: 2000

QS8M51FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

• Polarity: N-Channel; P-Channel
• I_DSS: 2000

• V_(BR)DSS: 100
• Q_G: 4.7

25V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE [See More]

• Polarity: N-Channel; P-Channel

• Package Type: SO-8

Transistor [See More]

• Polarity: N-Channel
• I_DSS: 4000

• V_(BR)DSS: 250
• Q_G: 9

50V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE [See More]

• Polarity: N-Channel

Transistor [See More]

• Polarity: N-Channel
• I_DSS: 5000

• V_(BR)DSS: 250
• Q_G: 9

55V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE [See More]

• Polarity: N-Channel; P-Channel

• Package Type: SO-8

Transistor [See More]

• Polarity: N-Channel
• I_DSS: 5000

• V_(BR)DSS: 250
• Q_G: 9

Pwr MOSFET, 30V Dual N-and-P-Ch. HEXFET; SO-8 [See More]

• Polarity: N-Channel; P-Channel

• Package Type: SO-8

The ultra-small package(1006size) RV2C010UN is suitable for portable devices. [See More]

• Polarity: N-Channel
• I_DSS: 1000

• V_(BR)DSS: 20
• P_D: 400

Pwr MOSFET, 50V Dual N-Ch. HEXFET; SO-8 [See More]

• Polarity: N-Channel

RUF025N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

• Polarity: N-Channel
• I_DSS: 2500

• V_(BR)DSS: 20
• Q_G: 5

RUL035N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

• Polarity: N-Channel
• I_DSS: 3500

• V_(BR)DSS: 20
• Q_G: 5.7

RF4E100AJ is high power small mold package(HUML2020L8) MOSFET for switching and DC/DC converter, battery switch application. [See More]

• Polarity: N-Channel
• I_DSS: 10000

• V_(BR)DSS: 30
• Q_G: 13

RQ3E100BN is high power package(HSMT8) MOSFET for switching. [See More]

• Polarity: N-Channel
• I_DSS: 13500

• V_(BR)DSS: 30
• Q_G: 10.5

The small surface mount package RQ5E035BN is suitable for switching. [See More]

• Polarity: N-Channel
• I_DSS: 3500

• V_(BR)DSS: 30
• Q_G: 3.1

Power MOSFET RQ6E045BN is suitable for switching power supply. [See More]

• Polarity: N-Channel
• I_DSS: 4500

• V_(BR)DSS: 30
• Q_G: 8.4

R6010MND3 is fast trr power MOSFET, suitable for switching power supply. [See More]

• Polarity: N-Channel
• I_DSS: 10000

• V_(BR)DSS: 600
• Q_G: 20

R6015KNZ is Low on-resistance and ultra fast switching speed Power MOSFET. [See More]

• Polarity: N-Channel
• I_DSS: 15000

• V_(BR)DSS: 600
• Q_G: 27.5