N-Channel Power MOSFET
from Infineon Technologies AG
Target Applications: - Battery Protection. - Load Switch High Side. - Load Switch Low Side [See More]
- Polarity: N-Channel
- Package Type: SO-8; SO-8
- QG: 130
from ROHM Semiconductor GmbH
SP8K52HZG is an automotive grade MOSFET that is AEC-Q101 qualified. Two Nch 100V MOSFETs are included in the SOP8 package. Built-in ESD protection diode. Ideal for switching applications. [See More]
- Polarity: N-Channel
- IDSS: 3000
- V(BR)DSS: 100
- QG: 8.5
from Rochester Electronics
2N6760 - 5.5A, 400V, 1ohm, N-Channel, POWER MOSFET [See More]
- Polarity: N-Channel
- Package Type: TO-204AA
- rDS(on): 1
from Texas Instruments
N-Channel NexFET? Power MOSFET 4-DSBGA -55 to 150 [See More]
- Polarity: N-Channel
- rDS(on): 0.0340
- V(BR)DSS: 12
- IDSS: 20200
from Newark, An Avnet Company
HF/VHF POWER MOSFET, N CHANNEL, 125V, 16A, SOT-121B; Drain Source Voltage Vds:125V; Continuous Drain Current Id:16A; Power Dissipation Pd:220W; Operating Frequency Min:-; Operating Frequency Max:-; RF Transistor Case:-; MSL:- RoHS Compliant: Yes [See More]
- Polarity: N-Channel
- PD: 220000
- IDSS: 16000
- Package Type: TO-3
from Infineon Technologies AG
Target Applications: - Battery Protection. - Isolated Primary Side MOSFETs. - Isolated Secondary Side SyncRec MOSFETs. - Load Switch High Side. - Load Switch Low Side. - Point of Load ControlFET [See More]
- Polarity: N-Channel
- Package Type: PQFN 3.3 x 3.3 B/G
- QG: 15
from ROHM Semiconductor GmbH
HP8M51TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for switching application. [See More]
- Polarity: N-Channel; P-Channel
- IDSS: 4500
- V(BR)DSS: 100
- QG: 8.5
from Rochester Electronics
2N6787 - Power Field-Effect Transistor, N-Channel, MOSFET [See More]
- Polarity: N-Channel
- Package Type: CAN3/4
from Texas Instruments
N-Channel Power MOSFET, CSD13202Q2, 12V Vds, 9.3mohm Rdson4.5 (max) 6-WSON -55 to 150 [See More]
- Polarity: N-Channel
- rDS(on): 0.0093
- V(BR)DSS: 12
- IDSS: 76000
from Newark, An Avnet Company
N CHANNEL POLAR POWER MOSFET, HiPerFET, 900V, 12A, TO247; Transistor Polarity:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:12A; On Resistance Rds(on):0.9ohm; Transistor Mounting:Through Hole; Product Range:- RoHS Compliant: Yes [See More]
- Polarity: N-Channel
- rDS(on): 0.9000
- Transistor Type: N Channel Polar Power Mosfet, Hiperfet, 900V, 12A, To247; Transistor Polarity Ixys Semiconductor
- IDSS: 12000
from Infineon Technologies AG
Home MOSFET, 20V-100V N-Channel Small Power MOSFET [See More]
- Polarity: N-Channel
- Package Type: PQFN 3.3 x 3.3 E
- QG: 15
from ROHM Semiconductor GmbH
Discrete Semiconductors, MOSFETs, 190 to 800V Power MOSFETs, Nch 190 to 250V MOSFETs [See More]
- Polarity: N-Channel
- IDSS: 5000
- V(BR)DSS: 250
- QG: 9
from Rochester Electronics
2SK1060 - Power Field-Effect Transistor, 5A, 100V, N-Channel MOSFET [See More]
- Polarity: N-Channel
- Package Type: TO-220; TO-220-3
from Texas Instruments
N-Channel NexFET? Power MOSFET 6-DSBGA -55 to 150 [See More]
- Polarity: N-Channel
- rDS(on): 0.0200
- V(BR)DSS: 12
- IDSS: 31000
from Newark, An Avnet Company
N CHANNEL POLAR POWER MOSFET, HiPerFET, 900V, 52A, PLUS264; Transistor Polarity:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:52A; On Resistance Rds(on):0.16ohm; Transistor Mounting:Through Hole; MSL:- RoHS Compliant: Yes [See More]
- Polarity: N-Channel
- rDS(on): 0.1600
- Transistor Type: N Channel Polar Power Mosfet, Hiperfet, 900V, 52A, Plus264; Transistor Polarity Ixys Semiconductor
- IDSS: 52000
from Infineon Technologies AG
Target Applications: - Battery Protection. - DC Switches. - Isolated Primary Side MOSFETs. - Isolated Secondary Side SyncRec MOSFETs. - Load Switch. - Load Switch High Side. - Load Switch Low Side. - Point of Load ControlFET [See More]
- Polarity: N-Channel
- Package Type: PQFN 2 x 2
- QG: 8.7
from ROHM Semiconductor GmbH
The ultra-small package(1006size) RV2C010UN is suitable for portable devices. [See More]
- Polarity: N-Channel
- IDSS: 1000
- V(BR)DSS: 20
- PD: 400
from Rochester Electronics
2SK1152 - Power Field-Effect Transistor, 1.5A, 500V, N-Channel MOSFET [See More]
- Polarity: N-Channel
- Package Type: DPAK3
from Texas Instruments
20-V N-Channel NexFET? Power MOSFET 6-WSON -55 to 150 [See More]
- Polarity: N-Channel
- rDS(on): 0.0192
- V(BR)DSS: 20
- IDSS: 22000
from Newark, An Avnet Company
N CHANNEL POWER MOSFET, 30V, 171A, SO-8FL; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:171A; On Resistance Rds(on):0.0013ohm; Transistor Mounting:Surface Mount; Threshold Voltage Vgs:2V RoHS Compliant: Yes [See More]
- Polarity: N-Channel
- rDS(on): 0.0013
- Transistor Type: N Channel Power Mosfet, 30V, 171A, So-8Fl; Transistor Polarity On Semiconductor
- IDSS: 171000
from Infineon Technologies AG
Target Applications: - Battery Protection. - DC Switches. - Load Switch. - Load Switch High Side. - Load Switch Low Side [See More]
- Polarity: N-Channel
- Package Type: SOT23; SOT-23
- QG: 5.4
from ROHM Semiconductor GmbH
UT6MA3 is Low on-resistance Middle Power MOSFET for switching application. [See More]
- Polarity: N-Channel; P-Channel
- IDSS: 5500
- V(BR)DSS: 20
- QG: 4
from Rochester Electronics
2SK1154 - Power Field-Effect Transistor, 3A, 500V, N-Channel MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Tube; Tube
- Package Type: CAN3/4
from Texas Instruments
N-Channel NexFET? Power MOSFET 6-WSON -55 to 150 [See More]
- Polarity: N-Channel
- rDS(on): 0.0290
- V(BR)DSS: 25
- IDSS: 20000
from Newark, An Avnet Company
N CHANNEL POWER MOSFET, HEXFET, 150V, 33A, DPAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:33A; On Resistance Rds(on):0.034ohm; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes [See More]
- Polarity: N-Channel
- rDS(on): 0.0340
- Transistor Type: N Channel Power Mosfet, Hexfet, 150V, 33A, Dpak; Transistor Polarity Infineon
- IDSS: 33000
from Infineon Technologies AG
Target Applications: - Battery Protection. - DC Switches. - Load Switch. - Load Switch High Side. - Load Switch Low Side [See More]
- Polarity: N-Channel
- Package Type: TSOP-6
- QG: 4.8
from ROHM Semiconductor GmbH
RJ1U330AAFRG is the high reliability automotive MOSFET, suitable for switching power supply. [See More]
- Polarity: N-Channel
- IDSS: 33000
- V(BR)DSS: 250
- QG: 80
from Rochester Electronics
2SK1165 - Power Field-Effect Transistor, 12A, 450V, N-Channel MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Tube; Tube
- Package Type: TO-218
from Texas Instruments
N-Channel NexFET ™ Power MOSFET 8-VSON-CLIP -55 to 150 [See More]
- Polarity: N-Channel
- rDS(on): 0.0026
- V(BR)DSS: 25
- IDSS: 200000
from Newark, An Avnet Company
N CHANNEL POWER MOSFET, HEXFET, 30V, 27A, PQFN-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:27A; On Resistance Rds(on):0.0025ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes [See More]
- Polarity: N-Channel
- rDS(on): 0.0025
- Transistor Type: N Channel Power Mosfet, Hexfet, 30V, 27A, Pqfn-8; Transistor Polarity Infineon
- IDSS: 27000
from Infineon Technologies AG
Target Applications: - DC Switches. - Load Switch [See More]
- Polarity: N-Channel
- Package Type: PQFN 2 x 2
- QG: 2.8
from ROHM Semiconductor GmbH
RD3U041AAFRA is an automotive grade MOSFET that is AEC-Q101 qualified, and suitable for switching applications. [See More]
- Polarity: N-Channel
- IDSS: 4000
- V(BR)DSS: 250
- QG: 8.5
from Rochester Electronics
2SK1313 - Power Field-Effect Transistor, 5A, 450V, N-Channel MOSFET [See More]
- Polarity: N-Channel
- Package Type: LDPAK3
from Texas Instruments
DualCool? N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]
- Polarity: N-Channel
- rDS(on): 0.0026
- V(BR)DSS: 25
- IDSS: 200000
from Newark, An Avnet Company
N CHANNEL POWER MOSFET, HEXFET, 60V, 270A, D2PAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:270A; On Resistance Rds(on):0.0019ohm; Transistor Mounting:Surface Mount; No. of Pins:3Pins RoHS Compliant: Yes [See More]
- Polarity: N-Channel
- rDS(on): 0.0019
- Transistor Type: N Channel Power Mosfet, Hexfet, 60V, 270A, D2Pak; Transistor Polarity Infineon
- IDSS: 270000
from Infineon Technologies AG
The 150V OptiMOS ™ achieves a reduction in R DS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS ™... [See More]
- Polarity: N-Channel
- Package Type: CanPAK
- QG: 26
from ROHM Semiconductor GmbH
Two MOSFETs of 30V Pch and Nch (common drain configuration) are built in a symmetric dual package. Ideal for switching and motor drive applications. [See More]
- Polarity: N-Channel; P-Channel
- IDSS: 7000
- V(BR)DSS: 30
- QG: 4.7
from Rochester Electronics
2SK1315 - Power Field-Effect Transistor, 8A, 450V, N-Channel MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Tube; Tube
- Package Type: IPAK-3
from Texas Instruments
N-Channel NexFET ™ Power MOSFETs 8-VSON-CLIP -55 to 150 [See More]
- Polarity: N-Channel
- rDS(on): 0.0058
- V(BR)DSS: 25
- IDSS: 136000
from Newark, An Avnet Company
N CHANNEL POWER MOSFET, LINEAR L2, 500V, 15A, TO-220; Transistor Polarity:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:15A; On Resistance Rds(on):0.48ohm; Transistor Mounting:Through Hole; No. of Pins:3Pins RoHS Compliant: Yes [See More]
- Polarity: N-Channel
- rDS(on): 0.4800
- Transistor Type: N Channel Power Mosfet, Linear L2, 500V, 15A, To-220; Transistor Polarity Ixys Semiconductor
- IDSS: 15000
from Infineon Technologies AG
Home MOSFET, 20V-300V N-Channel Power MOSFET, 120V-300V N-Channel Power MOSFET [See More]
- Polarity: N-Channel
- Package Type: TO-220; TO-220
- QG: 180
from ROHM Semiconductor GmbH
HP8K22 is low on-resistance MOSFET for DC/DC converter. [See More]
- Polarity: N-Channel
- IDSS: 27000
- V(BR)DSS: 30
- QG: 4.8
from Rochester Electronics
2SK1461 - 5A, 900V, 3.6ohm, N-Channel Power MOSFET, TO-218 [See More]
- Polarity: N-Channel
- Package Type: TO-218
- rDS(on): 3.6
from Texas Instruments
DualCool? N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]
- Polarity: N-Channel
- rDS(on): 0.0058
- V(BR)DSS: 25
- IDSS: 136000
from Newark, An Avnet Company
N CHANNEL POWER MOSFET, LINEAR L2, 500V, 40A, TO-3P; Transistor Polarity:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:40A; On Resistance Rds(on):0.17ohm; Transistor Mounting:Through Hole; No. of Pins:3Pins RoHS Compliant: Yes [See More]
- Polarity: N-Channel
- rDS(on): 0.1700
- Transistor Type: N Channel Power Mosfet, Linear L2, 500V, 40A, To-3P; Transistor Polarity Ixys Semiconductor
- IDSS: 40000
from Infineon Technologies AG
Home MOSFET, 20V-300V N-Channel Power MOSFET, 120V-300V N-Channel Power MOSFET [See More]
- Polarity: N-Channel
- Package Type: TO-263; D2PAK 7pin (TO-263 7pin)
- QG: 210
from ROHM Semiconductor GmbH
The Middle Power MOSFET QH8KA4 is suitable for switching and battery applications. [See More]
- Polarity: N-Channel
- IDSS: 9000
- V(BR)DSS: 30
- QG: 12
from Rochester Electronics
2SK1566 - Power Field-Effect Transistor, 7A, 450V, N-Channel MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Tube; Tube
- Package Type: FULLPAK220
from Texas Instruments
N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]
- Polarity: N-Channel
- rDS(on): 0.0055
- V(BR)DSS: 25
- IDSS: 112000
from Newark, An Avnet Company
N CHANNEL POWER MOSFET, LINEAR L2, 500V, 53A, SOT-227B; Transistor Polarity:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:53A; On Resistance Rds(on):0.1ohm; Transistor Mounting:Module; No. of Pins:4Pins; MSL:-RoHS Compliant: Yes [See More]
- Polarity: N-Channel
- rDS(on): 0.1000
- Transistor Type: N Channel Power Mosfet, Linear L2, 500V, 53A, Sot-227B; Transistor Polarity Ixys Semiconductor
- IDSS: 53000
from Infineon Technologies AG
Home MOSFET, 20V-300V N-Channel Power MOSFET, 120V-300V N-Channel Power MOSFET [See More]
- Polarity: N-Channel
- Package Type: TO-220; TO-220
- QG: 15.3
from ROHM Semiconductor GmbH
HS8K1 is standard MOSFET for switching application. [See More]
- Polarity: N-Channel
- IDSS: 10000
- V(BR)DSS: 30
- QG: 2.7
from Rochester Electronics
2SK2498 - Switching N-Channel Power MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Bag
- Package Type: TO-220; TO-220-3FP
from Texas Instruments
Dual Cool N-Channel NexFET Power MOSFET 8-VSON-CLIP -55 to 150 [See More]
- Polarity: N-Channel
- rDS(on): 0.0055
- V(BR)DSS: 25
- IDSS: 112000
from Newark, An Avnet Company
N CHANNEL POWER MOSFET, NEXFET, 25V, 100A, SON-8; Transistor Polarity:N Channel; Drain Source Voltage Vds:25V; Continuous Drain Current Id:100A; On Resistance Rds(on):0.0019ohm; Transistor Mounting:Surface Mount; No. of Pins:8Pins RoHS Compliant: Yes [See More]
- Polarity: N-Channel
- rDS(on): 0.0019
- Transistor Type: N Channel Power Mosfet, Nexfet, 25V, 100A, Son-8; Transistor Polarity Texas Instruments
- IDSS: 100000
from Infineon Technologies AG
Target Applications: - UPS and Inverter applications Half-bridge and full-bridge topologies Resonant mode power supplies DC/DC and AC/DC converters OR-ing and redundant power switches Brushed and BLDC Motor drive applications Battery powered circuits [See More]
- Polarity: N-Channel
- Package Type: TO-247; TO-247
- QG: 135
from ROHM Semiconductor GmbH
R6015KNZ is Low on-resistance and ultra fast switching speed Power MOSFET, suitable for the switching application. [See More]
- Polarity: N-Channel
- IDSS: 15000
- V(BR)DSS: 600
- QG: 27.5
from Rochester Electronics
2SK2530 - New H-Iif (Frd Built-In), 250V, N-Channel Ap Lineup Power MOSFET [See More]
- Polarity: N-Channel
- Package Type: D2PAK
from Texas Instruments
N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]
- Polarity: N-Channel
- rDS(on): 0.0022
- V(BR)DSS: 25
- IDSS: 200000
from Newark, An Avnet Company
N CHANNEL POWER MOSFET, STripFET, 24V, 280A, POWERSO-10, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:24V; Continuous Drain Current Id:280A; On Resistance Rds(on):800 µohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes [See More]
- Polarity: N-Channel
- rDS(on): 8.00E-4
- Transistor Type: N Channel Power Mosfet, Stripfet, 24V, 280A, Powerso-10, Full Reel; Transistor Polarity Stmicroelectronics
- IDSS: 280000
from Infineon Technologies AG
Home MOSFET, 20V-300V N-Channel Power MOSFET, 120V-300V N-Channel Power MOSFET [See More]
- Polarity: N-Channel
- Package Type: TO-263; D2PAK (TO-263)
- QG: 63.3
from ROHM Semiconductor GmbH
R6020KNZ4 is a power MOSFET for switching applications. [See More]
- Polarity: N-Channel
- IDSS: 20000
- V(BR)DSS: 600
- QG: 40
from Rochester Electronics
2SK2570 - Power Field-Effect Transistor, 0.2A, 20V, N-Channel MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: CPH3
from Texas Instruments
DualCool? N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]
- Polarity: N-Channel
- rDS(on): 0.0022
- V(BR)DSS: 25
- IDSS: 200000
from Newark, An Avnet Company
N CHANNEL POWER MOSFET, STripFET, 60V, 30A, TO-220FP; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:30A; On Resistance Rds(on):0.014ohm; Transistor Mounting:Through Hole; No. of Pins:3Pins RoHS Compliant: Yes [See More]
- Polarity: N-Channel
- rDS(on): 0.0140
- Transistor Type: N Channel Power Mosfet, Stripfet, 60V, 30A, To-220Fp; Transistor Polarity Stmicroelectronics
- IDSS: 30000
from Infineon Technologies AG
Target Applications: - Battery Operated Drive. - Class D Audio. - Load Switch High Side [See More]
- Polarity: N-Channel
- Package Type: DirectFET MZ
- QG: 34
from ROHM Semiconductor GmbH
R6002END3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application. [See More]
- Polarity: N-Channel
- IDSS: 2000
- V(BR)DSS: 600
- QG: 6.5
from Rochester Electronics
Power Field-Effect Transistor, N-Channel, MOSFET [See More]
- Polarity: N-Channel
- Package Type: FULLPAK220
from Texas Instruments
N-Channel NexFET Power MOSFET 8-VSON-CLIP -55 to 150 [See More]
- Polarity: N-Channel
- rDS(on): 0.0048
- V(BR)DSS: 25
- IDSS: 112000
from Newark, An Avnet Company
POWER MOSFET 80V SINGLE N CHANNEL ROHS COMPLIANT: YES [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel
- Package Type: TO-3
from Infineon Technologies AG
Target Applications: - Battery Operated Drive. - Isolated Primary Side MOSFETs. - Isolated Secondary Side SyncRec MOSFETs. - Load Switch High Side [See More]
- Polarity: N-Channel
- Package Type: DirectFET L8
- QG: 97
from ROHM Semiconductor GmbH
The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits. [See More]
- Polarity: N-Channel
- IDSS: 15000
- V(BR)DSS: 650
- QG: 27.5
from Rochester Electronics
2SK3816 - Power Field-Effect Transistor, N-Channel, MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: SC-88/SC70-6/SOT-363 6
from Texas Instruments
25V, N Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]
- Polarity: N-Channel
- rDS(on): 0.0055
- V(BR)DSS: 25
- IDSS: 115000
from Newark, An Avnet Company
Power MOSFET, N Channel, 1 A, 600 V, 9.3 ohm, 10 V, 2 V RoHS Compliant: Yes [See More]
- Polarity: N-Channel
- Package Type: TO-3
from Infineon Technologies AG
Home MOSFET, 20V-300V N-Channel Power MOSFET, 120V-300V N-Channel Power MOSFET [See More]
- Polarity: N-Channel
- Package Type: Super-220 (TO-273)
- QG: 160
from ROHM Semiconductor GmbH
RJ1P12BBD is a Power MOSFET with Low on - resistance, suitable for Switching. [See More]
- Polarity: N-Channel
- IDSS: 120000
- V(BR)DSS: 100
- QG: 51
from Rochester Electronics
2SK4066 - Power Field-Effect Transistor, N-Channel, MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Tube; Tube
- Package Type: IPAK-3
from Texas Instruments
N-Channel NexFET? Power MOSFET.... 8-VSONP -55 to 150 [See More]
- Polarity: N-Channel
- rDS(on): 0.0055
- V(BR)DSS: 25
- IDSS: 131000
from Newark, An Avnet Company
Power MOSFET, N Channel, 1 A, 800 V, 15.5 ohm, 10 V, 5 V RoHS Compliant: Yes [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel
- Package Type: TO-3
from Infineon Technologies AG
Target Applications: - Battery Operated Drive. - Isolated Primary Side MOSFETs. - Isolated Secondary Side SyncRec MOSFETs [See More]
- Polarity: N-Channel
- Package Type: PQFN 5 x 6 B/G
- QG: 33
from ROHM Semiconductor GmbH
RQ3P300BH is a power MOSFET with low on - resistance, suitable for switching. [See More]
- Polarity: N-Channel
- IDSS: 39000
- V(BR)DSS: 100
- QG: 18
from Rochester Electronics
2SK4070-ZK - Switching N-Channel Power Mosfet [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Embossed Tape
- Package Type: MP-3ZK-3
from Texas Instruments
N-Channel NexFET ™ Power MOSFET 8-VSON-CLIP -55 to 150 [See More]
- Polarity: N-Channel
- rDS(on): 0.0023
- V(BR)DSS: 25
- IDSS: 240000
from Newark, An Avnet Company
Power MOSFET, N Channel, 1.85 A, 1 kV, 6.25 ohm, 10 V, 3.75 V RoHS Compliant: Yes [See More]
- Polarity: N-Channel
- Package Type: TO-3
from Infineon Technologies AG
Target Applications: - Class D Audio [See More]
- Polarity: N-Channel
- Package Type: TO-220; TO-220-5 FP
- QG: 13
from ROHM Semiconductor GmbH
RS1P600BE is a power MOSFET with low on - resistance, suitable for DC/DC converters. [See More]
- Polarity: N-Channel
- IDSS: 60000
- V(BR)DSS: 100
- QG: 33
from Rochester Electronics
2SK4150TZ - N-Channel Power MOSFET 250V, 0.4A [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: TO-92; TO-92-3
from Texas Instruments
N-Channel NexFET ™ Power MOSFET 8-VSONP -55 to 150 [See More]
- Polarity: N-Channel
- rDS(on): 0.0037
- V(BR)DSS: 25
- IDSS: 184000
from Newark, An Avnet Company
POWER MOSFET, N CHANNEL, 10A, TO-220FP-3; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.37ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes [See More]
- Polarity: N-Channel
- rDS(on): 0.3700
- Transistor Type: Power Mosfet, N Channel, 10A, To-220Fp-3; Transistor Polarity Stmicroelectronics
- IDSS: 10000
from Infineon Technologies AG
Home MOSFET, 20V-300V N-Channel Power MOSFET, 120V-300V N-Channel Power MOSFET [See More]
- Polarity: N-Channel
- Package Type: TO-220; TO-220-3 FP
- QG: 73
from ROHM Semiconductor GmbH
RUF025N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]
- Polarity: N-Channel
- IDSS: 2500
- V(BR)DSS: 20
- QG: 5
from Rochester Electronics
2SK4197 - Power Field-Effect Transistor, N-Channel, MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Tube; Tube
- Package Type: TO-220; TO-220-3FP
from Texas Instruments
N-Channel NexFET ™ Power MOSFET 8-VSONP -55 to 150 [See More]
- Polarity: N-Channel
- rDS(on): 0.0072
- V(BR)DSS: 25
- IDSS: 135000
from Newark, An Avnet Company
Power MOSFET, N Channel, 11 A, 650 V, 0.199 ohm, 10 V, 3.5 V RoHS Compliant: Yes [See More]
- Polarity: N-Channel
- Package Type: TO-3
from Infineon Technologies AG
Target Applications: - Battery Operated Drive. - Consumer Full-Bridge. - Full-Bridge. - Push-Pull [See More]
- Polarity: N-Channel
- Package Type: TO-247; TO-247
- QG: 180
from ROHM Semiconductor GmbH
RUL035N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]
- Polarity: N-Channel
- IDSS: 3500
- V(BR)DSS: 20
- QG: 5.7
from Rochester Electronics
2SK681 - Power Field-Effect Transistor, N-Channel MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Bag
- Package Type: SP8
from Texas Instruments
N-Channel NexFET ™ Power MOSFET 8-VSON-CLIP -55 to 150 [See More]
- Polarity: N-Channel
- rDS(on): 0.0074
- V(BR)DSS: 25
- IDSS: 114000
from Newark, An Avnet Company
Power MOSFET, N Channel, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V RoHS Compliant: Yes [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel
- Package Type: TO-3
from Infineon Technologies AG
Home MOSFET, 20V-300V N-Channel Power MOSFET, 120V-300V N-Channel Power MOSFET [See More]
- Polarity: N-Channel
- Package Type: Super-247 (TO-274)
- QG: 260
from ROHM Semiconductor GmbH
RF4E100AJ is high power small mold package(HUML2020L8) MOSFET for switching and DC/DC converter, battery switch application. [See More]
- Polarity: N-Channel
- IDSS: 10000
- V(BR)DSS: 30
- QG: 13
from Rochester Electronics
3N206 - N-Channel, POWER MOSFET [See More]
- Polarity: N-Channel
- Package Type: TO-72
from Texas Instruments
N-Channel NexFET ™ Power MOSFET 8-VSON-CLIP -55 to 150 [See More]
- Polarity: N-Channel
- rDS(on): 0.0033
- V(BR)DSS: 25
- IDSS: 200000
from Newark, An Avnet Company
Power MOSFET, N Channel, 13 A, 1 kV, 700 mohm, 10 V, 3.75 V RoHS Compliant: No [See More]
- Polarity: N-Channel
- Package Type: TO-3
from Infineon Technologies AG
Home MOSFET, 20V-300V N-Channel Power MOSFET, 120V-300V N-Channel Power MOSFET [See More]
- Polarity: N-Channel
- Package Type: TO-252 (DPAK); DPAK (TO-252)
- QG: 19
from ROHM Semiconductor GmbH
RQ5E035XN is a Small Signal MOSFET featuring low-on resistance and Built-in G-S Protection Diode. It is suitable for switching. [See More]
- Polarity: N-Channel
- IDSS: 3500
- V(BR)DSS: 30
- QG: 3.3
from Rochester Electronics
BF5020 - Power Field-Effect Transistor, N-Channel, MOSFET [See More]
- Polarity: N-Channel
- Package Type: SOT343
from Texas Instruments
DualCool? N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]
- Polarity: N-Channel
- rDS(on): 0.0033
- V(BR)DSS: 25
- IDSS: 200000
from Newark, An Avnet Company
Power MOSFET, N Channel, 15 A, 600 V, 0.23 ohm, 10 V, 2 V RoHS Compliant: Yes [See More]
- Polarity: N-Channel
- Package Type: TO-3; TO-252 (DPAK)
from Infineon Technologies AG
Target Applications: - Battery Operated Drive. - Lighting LED [See More]
- Polarity: N-Channel
- Package Type: TO-252 (DPAK); DPAK (TO-252)
- QG: 25
from ROHM Semiconductor GmbH
Power MOSFET RQ6E045BN is suitable for switching power supply. [See More]
- Polarity: N-Channel
- IDSS: 4500
- V(BR)DSS: 30
- QG: 8.4
from Rochester Electronics
BQ24725 2-4 Cell Li+ Battery SMBus Charge Controller with N-Channel Power MOSFET Selector [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: VQFN20
from Texas Instruments
N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]
- Polarity: N-Channel
- rDS(on): 0.0068
- V(BR)DSS: 25
- IDSS: 141000
from Newark, An Avnet Company
Power MOSFET, N Channel, 16.4 A, 650 V, 0.18 ohm, 10 V, 3 V RoHS Compliant: Yes [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel
- Package Type: TO-3
from Infineon Technologies AG
Target Applications: - Battery Operated Drive [See More]
- Polarity: N-Channel
- Package Type: TO-263; D2PAK 7pin (TO-263 7pin)
- QG: 73
from ROHM Semiconductor GmbH
RW4E045AJ is a MOSFET for DC/DC converters, switching, battery switches. [See More]
- Polarity: N-Channel
- IDSS: 4500
- V(BR)DSS: 30
- QG: 4
from Rochester Electronics
BSC026N02 - 12V-300V N-Channel Power MOSFET [See More]
- Polarity: N-Channel
- Packing Method: Tape Reel; Tape & Reel
- Package Type: TDSON8
from Texas Instruments
DualCool? N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]
- Polarity: N-Channel
- rDS(on): 0.0068
- V(BR)DSS: 25
- IDSS: 141000
from Newark, An Avnet Company
POWER MOSFET, N CHANNEL, 18A, TO-262-3; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.19ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes [See More]
- Polarity: N-Channel
- rDS(on): 0.1900
- Transistor Type: Power Mosfet, N Channel, 18A, To-262-3; Transistor Polarity Stmicroelectronics
- IDSS: 18000
from Infineon Technologies AG
Target Applications: - Battery Operated Drive [See More]
- Polarity: N-Channel
- Package Type: TO-263; D2PAK (TO-263)
- QG: 25
from ROHM Semiconductor GmbH
RJ1G12BGN is a Power MOSFET with Low on - resistance, suitable for Switching. [See More]
- Polarity: N-Channel
- IDSS: 120000
- V(BR)DSS: 40
- QG: 82
from Rochester Electronics
BSO083N03 - OptlMOS N-Channel Power MOSFET [See More]
- Polarity: N-Channel
- Package Type: SOIC8
from Texas Instruments
N-Channel NexFET ™ Power MOSFET 8-VSON-CLIP -55 to 150 [See More]
- Polarity: N-Channel
- rDS(on): 0.0124
- V(BR)DSS: 25
- IDSS: 90000
from Newark, An Avnet Company
Power MOSFET, N Channel, 2 A, 600 V, 4.4 ohm, 10 V, 4 V RoHS Compliant: Yes [See More]
- Polarity: N-Channel
- Package Type: TO-3
from Allied Electronics, Inc.
20V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE [See More]
- Polarity: N-Channel
- rDS(on): 0.1000
- V(BR)DSS: 20
- PD: 2000
from Universal Semiconductor, Inc.
Self-Aligning Silicon Gate Sturcture. Low Transfer Capacitance - 0.2 pF typ. Low Input Capacitance - 2.4 pF typ. Low Output Capacitance - 1.3 pF typ. Low Gate Threadhold Voltage - 0.6V typ. [See More]
- Polarity: N-Channel
- Type: LDMOSFET
- Operating Mode: Enhancement
- V(BR)DSS: 25
from ROHM Semiconductor USA, LLC
SP8K52FRA is the high reliability Automotive transistor, suitable for switching applications and motor drive. [See More]
- Polarity: N-Channel
- IDSS: 3000
- V(BR)DSS: 100
- QG: 8.5
from Solid State Devices, Inc.
Features: Rugged poly-Si gate. Lowest ON-resistance in the Industry. Avalanche rated. Hermetically Sealed, Isolated Package. Low Total Gate Charge. Fast Switching. Improved (RDS(ON) QG) Figure of Merit. Class H, K Screening Available. Consult Factory for Special Requirements such as Builtin Zener... [See More]
- Polarity: N-Channel
- rDS(on): 318 to 340
- V(BR)DSS: 1000
- IDSS: 7.5 to 12
from Karl Kruse GmbH & Co. KG
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop... [See More]
- Polarity: N-Channel
from Allied Electronics, Inc.
20V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE [See More]
- Polarity: N-Channel
- rDS(on): 0.0500
- V(BR)DSS: 20
- PD: 2000
from ROHM Semiconductor USA, LLC
QS8M51FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]
- Polarity: N-Channel; P-Channel
- IDSS: 2000
- V(BR)DSS: 100
- QG: 4.7
from Allied Electronics, Inc.
25V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE [See More]
- Polarity: N-Channel; P-Channel
- Package Type: SO-8
from ROHM Semiconductor USA, LLC
Transistor [See More]
- Polarity: N-Channel
- IDSS: 4000
- V(BR)DSS: 250
- QG: 9
from Allied Electronics, Inc.
50V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE [See More]
- Polarity: N-Channel
from ROHM Semiconductor USA, LLC
Transistor [See More]
- Polarity: N-Channel
- IDSS: 5000
- V(BR)DSS: 250
- QG: 9
from Allied Electronics, Inc.
55V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE [See More]
- Polarity: N-Channel; P-Channel
- Package Type: SO-8
from ROHM Semiconductor USA, LLC
Transistor [See More]
- Polarity: N-Channel
- IDSS: 5000
- V(BR)DSS: 250
- QG: 9
from Allied Electronics, Inc.
Pwr MOSFET, 30V Dual N-and-P-Ch. HEXFET; SO-8 [See More]
- Polarity: N-Channel; P-Channel
- Package Type: SO-8
from ROHM Semiconductor USA, LLC
The ultra-small package(1006size) RV2C010UN is suitable for portable devices. [See More]
- Polarity: N-Channel
- IDSS: 1000
- V(BR)DSS: 20
- PD: 400
from Allied Electronics, Inc.
Pwr MOSFET, 50V Dual N-Ch. HEXFET; SO-8 [See More]
- Polarity: N-Channel
from ROHM Semiconductor USA, LLC
RUF025N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]
- Polarity: N-Channel
- IDSS: 2500
- V(BR)DSS: 20
- QG: 5
from ROHM Semiconductor USA, LLC
RUL035N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]
- Polarity: N-Channel
- IDSS: 3500
- V(BR)DSS: 20
- QG: 5.7
from ROHM Semiconductor USA, LLC
RF4E100AJ is high power small mold package(HUML2020L8) MOSFET for switching and DC/DC converter, battery switch application. [See More]
- Polarity: N-Channel
- IDSS: 10000
- V(BR)DSS: 30
- QG: 13
from ROHM Semiconductor USA, LLC
RQ3E100BN is high power package(HSMT8) MOSFET for switching. [See More]
- Polarity: N-Channel
- IDSS: 13500
- V(BR)DSS: 30
- QG: 10.5
from ROHM Semiconductor USA, LLC
The small surface mount package RQ5E035BN is suitable for switching. [See More]
- Polarity: N-Channel
- IDSS: 3500
- V(BR)DSS: 30
- QG: 3.1
from ROHM Semiconductor USA, LLC
Power MOSFET RQ6E045BN is suitable for switching power supply. [See More]
- Polarity: N-Channel
- IDSS: 4500
- V(BR)DSS: 30
- QG: 8.4
from ROHM Semiconductor USA, LLC
R6010MND3 is fast trr power MOSFET, suitable for switching power supply. [See More]
- Polarity: N-Channel
- IDSS: 10000
- V(BR)DSS: 600
- QG: 20
from ROHM Semiconductor USA, LLC
R6015KNZ is Low on-resistance and ultra fast switching speed Power MOSFET. [See More]
- Polarity: N-Channel
- IDSS: 15000
- V(BR)DSS: 600
- QG: 27.5