N-Channel Power MOSFET

N-Channel NexFET? Power MOSFET 4-DSBGA -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0340

• V_(BR)DSS: 12
• I_DSS: 20200

500V CoolMOS ™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of... [See More]

• Polarity: N-Channel; N
• r_DS(on): 0.1900

• Transistor Technology / Material: Si/SiC
• Q_G: 47.2

Win Source Part Number: 1003812-SP8K33HZGTB. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 2,500. Mounting: SMD (SMT). FET Type: 2 N-Channel (Dual). FET Feature: Standard. Drain to Source... [See More]

• Polarity: N-Channel
• T_J: 150

• Q_G: 12
• Package Type: SOT3

Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF [See More]

• Polarity: N-Channel
• Package Type: TO-205AF

• r_DS(on): 1.5

N-Channel Power MOSFET, CSD13202Q2, 12V Vds, 9.3mohm Rdson4.5 (max) 6-WSON -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0093

• V_(BR)DSS: 12
• I_DSS: 76000

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Polarity: N-Channel; N
• r_DS(on): 0.0600

• Transistor Technology / Material: Si/SiC
• Q_G: 67

Win Source Part Number: 1095533-SP8K31HZGTB. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tape & Reel. Standard Package: 2,500. Mounting: SMD (SMT). FET Type: 2 N-Channel (Dual). FET Feature: Standard. Drain to Source Voltage (Vdss): 60V. Current -... [See More]

• Polarity: N-Channel
• T_J: 150

• Q_G: 5.2
• Package Type: SOT3

Power Field-Effect Transistor, N-Channel MOSFET [See More]

• Polarity: N-Channel

• Package Type: TO-220; TO-220-3

N-Channel NexFET? Power MOSFET 6-DSBGA -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0200

• V_(BR)DSS: 12
• I_DSS: 31000

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

• Polarity: N-Channel; N
• r_DS(on): 0.0990

• Transistor Technology / Material: Si/SiC
• Q_G: 42

Manufacturer: Rohm Semiconductor. Win Source Part Number: 1324435-HS8K1TB. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Packaging: Reel - TR. Standard Package: 3,000. Mounting: Surface Mount. FET Type: 2 N-Channel (Dual). FET Feature: Standard. Drain to Source... [See More]

• Polarity: N-Channel
• T_J: 150

• Q_G: 6
• Package Type: SOT3; 8-UDFN Exposed Pad

Power Field-Effect Transistor, 5A, 450V, N-Channel MOSFET [See More]

• Polarity: N-Channel

• Package Type: LDPAK3

20-V N-Channel NexFET? Power MOSFET 6-WSON -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0192

• V_(BR)DSS: 20
• I_DSS: 22000

Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]

• Polarity: N-Channel; N
• r_DS(on): 0.2800

• Transistor Technology / Material: Si/SiC
• Q_G: 18

Win Source Part Number: 973769-UPA1601GS-E1-A. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Bulk. Standard Package: 1. Mounting: SMD (SMT). FET Type: 7 N-Channel. FET Feature: Standard. Drain to Source Voltage (Vdss): 30V. Current - Continuous Drain... [See More]

• Polarity: N-Channel
• Package Type: SOT3

• T_J: -40 to 85

Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: LDPAK4

N-Channel NexFET? Power MOSFET 6-WSON -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0290

• V_(BR)DSS: 25
• I_DSS: 20000

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Polarity: N-Channel; N
• r_DS(on): 0.1250

• Transistor Technology / Material: Si/SiC
• Q_G: 35

Win Source Part Number: 980245-SH8K25GZ0TB1. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tape & Reel. Standard Package: 2,500. Mounting: SMD (SMT). FET Type: 2 N-Channel (Dual). FET Feature: Standard. Drain to Source Voltage (Vdss): 40V. Current -... [See More]

• Polarity: N-Channel
• T_J: 150

• Q_G: 1.7
• Package Type: SOT3

Power Field-Effect Transistor, 1A, 250V, N-Channel MOSFET [See More]

• Polarity: N-Channel

• Package Type: DPAK4

N-Channel NexFET ™ Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0026

• V_(BR)DSS: 25
• I_DSS: 200000

Infineon ’s answer for flyback topologies. Developed to serve today ’s and especially tomorrow ’s trends in flyback topologies – the new 700V CoolMOS ™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters... [See More]

• Polarity: N-Channel; N
• r_DS(on): 0.3600

• Transistor Technology / Material: Si/SiC
• Q_G: 16.4

Win Source Part Number: 1006658-2SK3357-A. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 60 V. Current - Continuous Drain (Id) @ 25... [See More]

• Polarity: N-Channel
• P_D: 3000 to 150000

• Q_G: 170
• T_J: 150

Power Field-Effect Transistor, N-Channel MOSFET [See More]

• Polarity: N-Channel

• Package Type: FULLPAK220

DualCool? N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0026

• V_(BR)DSS: 25
• I_DSS: 200000

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS ™ P7 technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS ™ C3, the 950 V CoolMOS ™ P7 series delivers... [See More]

• Polarity: N-Channel; N
• r_DS(on): 1.2

• Transistor Technology / Material: Si/SiC
• Q_G: 15

Win Source Part Number: 1012044-TK110P10PL,RQ. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tape & Reel. Standard Package: 2,500. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 100 V. [See More]

• Polarity: N-Channel
• P_D: 75000

• Q_G: 33
• T_J: 175

N-Channel MOSFET High Speed Power Switching [See More]

• Polarity: N-Channel

• Package Type: MPAK3

N-Channel NexFET ™ Power MOSFETs 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0058

• V_(BR)DSS: 25
• I_DSS: 136000

600V CoolMOS ™ PFD7 superjunction MOSFET in TO-220 FullPAK narrow-lead package. The 600V CoolMOS ™ PFD7 superjunction MOSFET (IPAN60R125PFD7S) complements the CoolMOS ™ 7 offering for consumer applications. The IPAN60R125PFD7S in a TO-220 FullPAK narrow-lead package features... [See More]

• Polarity: N-Channel; N
• r_DS(on): 0.1250

• Transistor Technology / Material: Si/SiC
• Q_G: 36

Win Source Part Number: 1013896-FCPF250N65S3L1-F154. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: SuperFET ® III. Package: Tube. Standard Package: 1,000. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 650 V. [See More]

• Polarity: N-Channel
• P_D: 31000

• Q_G: 24
• T_J: -55 to 150

Power Field-Effect Transistor, 5A, 500V, N-Channel MOSFET [See More]

• Polarity: N-Channel
• Packing Method: Tube; Tube

• Package Type: CAN3/4

DualCool? N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0058

• V_(BR)DSS: 25
• I_DSS: 136000

Infineon's answer for flyback topologies. Developed to serve today ’s and especially tomorrow ’s trends in flyback topologies – the 700V CoolMOS ™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by... [See More]

• Polarity: N-Channel; N
• r_DS(on): 0.3600

• Transistor Technology / Material: Si/SiC
• Q_G: 16.4

Win Source Part Number: 1013963-HUF76645S3ST. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: UltraFET ®. Package: Bulk. Standard Package: 1. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss):... [See More]

• Polarity: N-Channel
• P_D: 310000

• Q_G: 153
• T_J: -55 to 175

Power MOSFET (N-ch 700V [See More]

• Polarity: N-Channel
• Packing Method: Tube; Tube

• Package Type: TO-220; TO-220SIS

N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0055

• V_(BR)DSS: 25
• I_DSS: 112000

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

• Polarity: N-Channel; N
• r_DS(on): 0.0400

• Transistor Technology / Material: Si/SiC
• Q_G: 107

Win Source Part Number: 1014772-SSP4N90A. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 900 V. Current - Continuous Drain (Id) @ 25... [See More]

• Polarity: N-Channel
• P_D: 120000

• Q_G: 46
• T_J: -55 to 150

Power Field-Effect Transistor, N-Channel, MOSFET [See More]

• Polarity: N-Channel

• Package Type: SIL3

Dual Cool N-Channel NexFET Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0055

• V_(BR)DSS: 25
• I_DSS: 112000

Infineon ’s 600V CoolMOS ™ CFD7 Superjunction MOSFET IPB60R040CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET... [See More]

• Polarity: N-Channel; N
• r_DS(on): 0.0400

• Transistor Technology / Material: Si/SiC
• Q_G: 108

Win Source Part Number: 1018480-RFG45N06. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 60 V. Current - Continuous Drain (Id) @ 25 °C:... [See More]

• Polarity: N-Channel
• P_D: 131000

• Q_G: 150
• T_J: -55 to 175

Power Field-Effect Transistor, N-Channel MOSFET [See More]

• Polarity: N-Channel
• Packing Method: Bulk; Bulk

• Package Type: IPAK-3

N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0022

• V_(BR)DSS: 25
• I_DSS: 200000

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Polarity: N-Channel; N
• r_DS(on): 0.0450

• Transistor Technology / Material: Si/SiC
• Q_G: 90

Win Source Part Number: 1019254-TK16J60W,S1VE. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tube. Standard Package: 25. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current - Continuous Drain (Id) @ 25... [See More]

• Polarity: N-Channel
• P_D: 130000

• Q_G: 38
• T_J: 150

Power Field-Effect Transistor, N-Channel, MOSFET [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: SC-88/SC70-6/SOT-363 6

DualCool? N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0022

• V_(BR)DSS: 25
• I_DSS: 200000

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Polarity: N-Channel; N
• r_DS(on): 0.0600

• Transistor Technology / Material: Si/SiC
• Q_G: 67

Win Source Part Number: 1034371-NTPF110N65S3HF. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: FRFET ®, SuperFET ® III. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss):... [See More]

• Polarity: N-Channel
• P_D: 240000

• Q_G: 62
• T_J: -55 to 150

Switching N-Channel Power Mosfet [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel; Coil Tape

• Package Type: MP-3ZK-3

N-Channel NexFET Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0048

• V_(BR)DSS: 25
• I_DSS: 112000

Infineons CoolMOS ™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS ™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of... [See More]

• Polarity: N-Channel; N
• r_DS(on): 0.1600

• Transistor Technology / Material: Si/SiC
• Q_G: 44

Win Source Part Number: 1041525-SIHFPS38N60L-GE3. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tube. Standard Package: 30. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current - Continuous Drain (Id) @... [See More]

• Polarity: N-Channel
• P_D: 540000

• Q_G: 320
• T_J: -55 to 150

Switching N-Channel Power MOSFET [See More]

• Polarity: N-Channel
• Packing Method: Tube; Tube

• Package Type: TO-3; TO-3P (MP-88)

25V, N Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0055

• V_(BR)DSS: 25
• I_DSS: 115000

The 650V CoolMOS ™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. Infineon ’s 650V CoolMOS ™ CFD7 superjunction MOSFET IPB65R041CFD7 in a D2PAK package is ideally suited for resonant topologies in industrial... [See More]

• Polarity: N-Channel; N
• r_DS(on): 0.0410

• Transistor Technology / Material: Si/SiC
• Q_G: 102

Win Source Part Number: 1058688-FCPF360N65S3R0L-F154. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: SuperFET ® III. Package: Tube. Standard Package: 1,000. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 650 V. [See More]

• Polarity: N-Channel
• P_D: 27000

• Q_G: 18
• T_J: -55 to 150

N-Channel Power MOSFET 250V, 0.4A [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: TO-92; TO-92-3

N-Channel NexFET? Power MOSFET.... 8-VSONP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0055

• V_(BR)DSS: 25
• I_DSS: 131000

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Polarity: N-Channel; N
• r_DS(on): 0.0450

• Transistor Technology / Material: Si/SiC
• Q_G: 93

Win Source Part Number: 1058780-FDD6670AL_NL. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: PowerTrench ®. Package: Bulk. Standard Package: 1. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage... [See More]

• Polarity: N-Channel
• P_D: 1600

• Q_G: 56
• T_J: -55 to 175

Power Field-Effect Transistor, N-Channel MOSFET [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: SOT-523

N-Channel NexFET ™ Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0023

• V_(BR)DSS: 25
• I_DSS: 240000

500V CoolMOS ™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of... [See More]

• Polarity: N-Channel; N
• r_DS(on): 0.2800

• Transistor Technology / Material: Si/SiC
• Q_G: 32.6

Win Source Part Number: 1058781-FDD6670A_NL. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: PowerTrench ®. Package: Bulk. Standard Package: 1. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss):... [See More]

• Polarity: N-Channel
• P_D: 1300 to 63000

• Q_G: 22
• T_J: -55 to 175

Power Field-Effect Transistor, N-Channel, MOSFET [See More]

• Polarity: N-Channel
• Packing Method: Tube; Tube

• Package Type: TO-220; TO-220-3FP

N-Channel NexFET ™ Power MOSFET 8-VSONP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0037

• V_(BR)DSS: 25
• I_DSS: 184000

Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]

• Polarity: N-Channel; N
• r_DS(on): 0.1450

• Transistor Technology / Material: Si/SiC
• Q_G: 31

Win Source Part Number: 1061186-NTBGS2D5N06C. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tape & Reel. Standard Package: 800. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 60 V. Current... [See More]

• Polarity: N-Channel
• P_D: 3700 to 136000

• Q_G: 45.4
• T_J: -55 to 175

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: HQFN24

N-Channel NexFET ™ Power MOSFET 8-VSONP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0072

• V_(BR)DSS: 25
• I_DSS: 135000

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

• Polarity: N-Channel; N
• r_DS(on): 0.1800

• Transistor Technology / Material: Si/SiC
• Q_G: 24

Win Source Part Number: 1063693-HUF76132S3S. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: UltraFET ™. Package: Bulk. Standard Package: 1. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss):... [See More]

• Polarity: N-Channel
• P_D: 120000

• Q_G: 52
• T_J: -40 to 150

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, N-Channel, Metal-oxide Semiconductor FET [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: FM4F

N-Channel NexFET ™ Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0074

• V_(BR)DSS: 25
• I_DSS: 114000

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Polarity: N-Channel; N
• r_DS(on): 0.1800

• Transistor Technology / Material: Si/SiC
• Q_G: 25

Win Source Part Number: 1063697-HUF76443S3ST. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: UltraFET ®. Package: Bulk. Standard Package: 800. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss):... [See More]

• Polarity: N-Channel
• P_D: 260000

• Q_G: 129
• T_J: -55 to 175

RF Power Field-Effect Transistor, 1-Element, S Band, N-Channel, Metal-oxide Semiconductor FET [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: CFM4F

N-Channel NexFET ™ Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0033

• V_(BR)DSS: 25
• I_DSS: 200000

600V CoolMOS ™ PFD7 superjunction MOSFET in TO-252 DPAK package. The 600V CoolMOS ™ PFD7 superjunction MOSFET (IPD60R1K0PFD7S) complements the CoolMOS ™ 7 offering for consumer applications. The IPD60R1K0PFD7S in a TO-252 DPAK package features RDS(on) of 1,000mOhm leading to low... [See More]

• Polarity: N-Channel; N
• r_DS(on): 1

• Transistor Technology / Material: Si/SiC
• Q_G: 6

Win Source Part Number: 1065493-IRF613. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 150 V. Current - Continuous Drain (Id) @ 25 °C:... [See More]

• Polarity: N-Channel
• P_D: 43000

• Q_G: 8.2
• T_J: -55 to 150

Power Field-Effect Transistor, 5.8A I(D), 60V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET [See More]

• Polarity: N-Channel
• Package Type: MG-WDSON-4

• r_DS(on): 0.0360
• Packing Method: Tape Reel; Tape & Reel

DualCool? N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0033

• V_(BR)DSS: 25
• I_DSS: 200000

600V CoolMOS ™ PFD7 superjunction MOSFET in TO-252 DPAK package. The 600V CoolMOS ™ PFD7 superjunction MOSFET (IPD60R1K5PFD7S) complements the CoolMOS ™ 7 offering for consumer applications. The IPD60R1K5PFD7S in a TO-252 DPAK package features RDS(on) of 1,500mOhm leading to low... [See More]

• Polarity: N-Channel; N
• r_DS(on): 1.5

• Transistor Technology / Material: Si/SiC
• Q_G: 4.6

Win Source Part Number: 1065497-IRF632. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 200 V. Current - Continuous Drain (Id) @ 25 °C:... [See More]

• Polarity: N-Channel
• P_D: 75000

• Q_G: 30
• T_J: -55 to 150

Power Field-Effect Transistor, 19A I(D), 100V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET [See More]

• Polarity: N-Channel
• Package Type: MG-WDSON-11

• r_DS(on): 0.0044
• Packing Method: Tape Reel; Tape & Reel

N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0068

• V_(BR)DSS: 25
• I_DSS: 141000

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Polarity: N-Channel; N
• r_DS(on): 0.1900

• Transistor Technology / Material: Si/SiC
• Q_G: 23

Win Source Part Number: 1065580-IRFR7746PBF. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: HEXFET ®. Package: Bulk. Standard Package: 1. Mounting: SMD (SMT). Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 75... [See More]

• Polarity: N-Channel
• P_D: 99000

• Q_G: 89
• T_J: -55 to 175

30V-250V N-Channel Power MOSFET Bare Die [See More]

• Polarity: N-Channel
• Packing Method: Tape Reel; Tape & Reel

• Package Type: Die

DualCool? N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0068

• V_(BR)DSS: 25
• I_DSS: 141000

Infineon ’s answer for flyback topologies. Developed to serve today ’s and especially tomorrow ’s trends in flyback topologies – the new 700V CoolMOS ™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters... [See More]

• Polarity: N-Channel; N
• r_DS(on): 1.4

• Transistor Technology / Material: Si/SiC
• Q_G: 4.7

Win Source Part Number: 1082905-NTPF250N65S3H. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: SuperFET ® III. Package: Tube. Standard Package: 50. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 650 V. Current -... [See More]

• Polarity: N-Channel
• P_D: 29000

• Q_G: 24
• T_J: -55 to 150

Power Field-Effect Transistor, N-Channel, MOSFET [See More]

• Polarity: N-Channel

• Package Type: CP4

N-Channel NexFET ™ Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0124

• V_(BR)DSS: 25
• I_DSS: 90000

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS ™ P7 technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS ™ C3, the 950 V CoolMOS ™ P7 series delivers... [See More]

• Polarity: N-Channel; N
• r_DS(on): 1.2

• Transistor Technology / Material: Si/SiC
• Q_G: 15

Win Source Part Number: 1088242-RFP4N05. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 50 V. Current - Continuous Drain (Id) @ 25 °C:... [See More]

• Polarity: N-Channel
• T_J: -55 to 150

• P_D: 25000
• Package Type: TO-220; SOT3

SP8K52FRA is the high reliability Automotive transistor, suitable for switching applications and motor drive. [See More]

• Polarity: N-Channel
• I_DSS: 3000

• V_(BR)DSS: 100
• Q_G: 8.5

Karl Kruse  is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop... [See More]

• Polarity: N-Channel

Automotive Power MOSFET, 60V, 500mA, 5 Ohm, Single N-Channel, SOT-23, Logic Level. Automotive version of the MMBF170L., SOT-23 (TO-236) 3 LEAD, 3000-REEL [See More]

• Polarity: N-Channel

Features: Rugged poly-Si gate. Lowest ON-resistance in the Industry. Avalanche rated. Hermetically Sealed, Isolated Package. Low Total Gate Charge. Fast Switching. Improved (RDS(ON) QG) Figure of Merit. Class H, K Screening Available. Consult Factory for Special Requirements such as Builtin Zener... [See More]

• Polarity: N-Channel
• r_DS(on): 318 to 340

• V_(BR)DSS: 1000
• I_DSS: 7.5 to 12

Self-Aligning Silicon Gate Sturcture. Low Transfer Capacitance - 0.2 pF typ. Low Input Capacitance - 2.4 pF typ. Low Output Capacitance - 1.3 pF typ. Low Gate Threadhold Voltage - 0.6V typ. [See More]

• Polarity: N-Channel
• Type: LDMOSFET

• Operating Mode: Enhancement
• V_(BR)DSS: 25

SH8KE6 is a low on-resistance MOSFET ideal for switching applications. This product includes two 100V Nch MOSFETs in a small surface mount package (SOP8). [See More]

• Polarity: N-Channel
• I_DSS: 4500

• V_(BR)DSS: 100
• Q_G: 3.3

QS8M51FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

• Polarity: N-Channel; P-Channel
• I_DSS: 2000

• V_(BR)DSS: 100
• Q_G: 4.7

Dual N-Channel 20 V 0.018 Ohm 3.1 W Surface Mount Power Mosfet - SOIC-8 [See More]

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 20

HP8M51TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for switching application. [See More]

• Polarity: N-Channel; P-Channel
• I_DSS: 4500

• V_(BR)DSS: 100
• Q_G: 8.5

Transistor [See More]

• Polarity: N-Channel
• I_DSS: 4000

• V_(BR)DSS: 250
• Q_G: 9

FAIRCHILD SEMICONDUCTOR FCPF260N60E Power MOSFET, N Channel, 15 A, 600 V, 0.22 ohm, 10 V, 2.5 V [See More]

• Polarity: N-Channel; N-CHANNEL
• r_DS(on): 0.2600

• V_(BR)DSS: 650
• P_D: 36000

Discrete Semiconductors, MOSFETs, 190 to 800V Power MOSFETs, Nch 190 to 250V MOSFETs [See More]

• Polarity: N-Channel
• I_DSS: 5000

• V_(BR)DSS: 250
• Q_G: 9

Transistor [See More]

• Polarity: N-Channel
• I_DSS: 5000

• V_(BR)DSS: 250
• Q_G: 9

N-Channel 600 V 104 mOhm 42 nC Surface Mount CoolMOS? Power Mosfet - VSON-4 [See More]

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• Q_G: 42

RCJ451N20 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application. [See More]

• Polarity: N-Channel
• I_DSS: 45000

• V_(BR)DSS: 200
• Q_G: 80

Transistor [See More]

• Polarity: N-Channel
• I_DSS: 5000

• V_(BR)DSS: 250
• Q_G: 9

N-CHANNEL POWER MOSFET [See More]

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 30

The ultra-small package(1006size) RV2C010UN is suitable for portable devices. [See More]

• Polarity: N-Channel
• I_DSS: 1000

• V_(BR)DSS: 20
• P_D: 400

The ultra-small package(1006size) RV2C010UN is suitable for portable devices. [See More]

• Polarity: N-Channel
• I_DSS: 1000

• V_(BR)DSS: 20
• P_D: 400

N-channel Power Mosfet, Qfet ®, 1000 V, 8.0 A, 1.45 ?, TO-247 [See More]

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 1000

UT6MA3 is Low on-resistance Middle Power MOSFET for switching application. [See More]

• Polarity: N-Channel; P-Channel
• I_DSS: 5500

• V_(BR)DSS: 20
• Q_G: 4

RUF025N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

• Polarity: N-Channel
• I_DSS: 2500

• V_(BR)DSS: 20
• Q_G: 5

OPTLMOS N-CHANNEL POWER MOSFET [See More]

• Polarity: N-Channel
• P_D: 300000

• Q_G: 148
• T_J: -55 to 175

RJ1U330AAFRG is the high reliability automotive MOSFET, suitable for switching power supply. [See More]

• Polarity: N-Channel
• I_DSS: 33000

• V_(BR)DSS: 250
• Q_G: 80

RUL035N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

• Polarity: N-Channel
• I_DSS: 3500

• V_(BR)DSS: 20
• Q_G: 5.7

Power MOSFET, N-Channel, QFET ®, 100 V, 164 A, 4.7 mO, D2PAK [See More]

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 100

RD3U041AAFRA is an automotive grade MOSFET that is AEC-Q101 qualified, and suitable for switching applications. [See More]

• Polarity: N-Channel
• I_DSS: 4000

• V_(BR)DSS: 250
• Q_G: 8.5

RF4E100AJ is high power small mold package(HUML2020L8) MOSFET for switching and DC/DC converter, battery switch application. [See More]

• Polarity: N-Channel
• I_DSS: 10000

• V_(BR)DSS: 30
• Q_G: 13

Single N-Channel 100 V 0.54 Ohms Through Hole Power Mosfet - HVMDIP-4 [See More]

• Polarity: N-Channel
• r_DS(on): 0.5400

• V_(BR)DSS: 100
• Q_G: 6.1

Two MOSFETs of 30V Pch and Nch (common drain configuration) are built in a symmetric dual package. Ideal for switching and motor drive applications. [See More]

• Polarity: N-Channel; P-Channel
• I_DSS: 7000

• V_(BR)DSS: 30
• Q_G: 4.7

RQ3E100BN is high power package(HSMT8) MOSFET for switching. [See More]

• Polarity: N-Channel
• I_DSS: 13500

• V_(BR)DSS: 30
• Q_G: 10.5

Single N-Channel 100 Vds 2.6 mOhm 830 W Power Mosfet - SOT-227B [See More]

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• r_DS(on): 2.60E6

HP8K22 is low on-resistance MOSFET for DC/DC converter. [See More]

• Polarity: N-Channel
• I_DSS: 27000

• V_(BR)DSS: 30
• Q_G: 4.8

The small surface mount package RQ5E035BN is suitable for switching. [See More]

• Polarity: N-Channel
• I_DSS: 3500

• V_(BR)DSS: 30
• Q_G: 3.1

Single N-Channel 150 V 0.09 Ohm 37 nC HEXFET ® Power Mosfet - TO-220-3 [See More]

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 150

The Middle Power MOSFET QH8KA4 is suitable for switching and battery applications. [See More]

• Polarity: N-Channel
• I_DSS: 9000

• V_(BR)DSS: 30
• Q_G: 12

Power MOSFET RQ6E045BN is suitable for switching power supply. [See More]

• Polarity: N-Channel
• I_DSS: 4500

• V_(BR)DSS: 30
• Q_G: 8.4

Single N-Channel 25 V 1.3 mOhm 37 nC OptiMOS? Power Mosfet - TSDSON-8 FL [See More]

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• r_DS(on): 0.0017

HS8K1 is standard MOSFET for switching application. [See More]

• Polarity: N-Channel
• I_DSS: 10000

• V_(BR)DSS: 30
• Q_G: 2.7

R6010MND3 is fast trr power MOSFET, suitable for switching power supply. [See More]

• Polarity: N-Channel
• I_DSS: 10000

• V_(BR)DSS: 600
• Q_G: 20

Single N-Channel 30 V 0.046 O 5.7 nC Power Mosfet - SOT-363 (SC-70-6) [See More]

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 30

R6015KNZ is Low on-resistance and ultra fast switching speed Power MOSFET, suitable for the switching application. [See More]

• Polarity: N-Channel
• I_DSS: 15000

• V_(BR)DSS: 600
• Q_G: 27.5

R6015KNZ is Low on-resistance and ultra fast switching speed Power MOSFET. [See More]

• Polarity: N-Channel
• I_DSS: 15000

• V_(BR)DSS: 600
• Q_G: 27.5

Single N-Channel 34 V 12 mOhm 13 nC OptiMOS? Power Mosfet - TSDSON-8 [See More]

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 34

R6020KNZ4 is a power MOSFET for switching applications. [See More]

• Polarity: N-Channel
• I_DSS: 20000

• V_(BR)DSS: 600
• Q_G: 40

Single N-Channel 40 V 2.4 mOhm 89 nC HEXFET ® Power Mosfet - IPAK [See More]

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 40

R6002END3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application. [See More]

• Polarity: N-Channel
• I_DSS: 2000

• V_(BR)DSS: 600
• Q_G: 6.5

Single N-Channel 500 V 3 Ohms Surface Mount Power Mosfet - TO-252 [See More]

• Polarity: N-Channel
• r_DS(on): 3

• V_(BR)DSS: 500
• Q_G: 19

The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits. [See More]

• Polarity: N-Channel
• I_DSS: 15000

• V_(BR)DSS: 650
• Q_G: 27.5

Single N-Channel 55 V 0.008 Ohm 130 nC HEXFET ® Power Mosfet - D2PAK [See More]

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 55

RS6P100BH is a power MOSFET with low on - resistance, suitable for switching. [See More]

• Polarity: N-Channel
• I_DSS: 100000

• V_(BR)DSS: 100
• Q_G: 29

Single N-Channel 60 V 3.2 mOhm 124 nC OptiMOS? Power Mosfet - TO-220-3FP [See More]

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• Q_G: 165

RJ1P12BBD is a Power MOSFET with Low on - resistance, suitable for Switching. [See More]

• Polarity: N-Channel
• I_DSS: 120000

• V_(BR)DSS: 100
• Q_G: 51

Single N-Channel 700 V 600 mOhm 10.5 nC CoolMOS? Power Mosfet - TO-251 [See More]

• Polarity: N-Channel
• P_D: 43000

• Q_G: 10.5
• T_J: -40 to 150

RQ3P300BH is a power MOSFET with low on - resistance, suitable for switching. [See More]

• Polarity: N-Channel
• I_DSS: 39000

• V_(BR)DSS: 100
• Q_G: 18

Single N-Channel 800 V 85 mOhm 285 nC CoolMOS? Power Mosfet - TO-247-3 [See More]

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 800

RUF025N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

• Polarity: N-Channel
• I_DSS: 2500

• V_(BR)DSS: 20
• Q_G: 5

Single N-Channel Power MOSFET 30 V, 69 A, 3.41mO [See More]

• Polarity: N-Channel
• P_D: 2550

• Q_G: 26
• T_J: -55 to 150

RUL035N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

• Polarity: N-Channel
• I_DSS: 3500

• V_(BR)DSS: 20
• Q_G: 5.7

STW57N65M5 Series 710 V 0.063 Ohm 42 A N-Channel MDmesh? V Power Mosfet - TO-247 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0630

• V_(BR)DSS: 650
• Q_G: 98

RF4E100AJ is high power small mold package(HUML2020L8) MOSFET for switching and DC/DC converter, battery switch application. [See More]

• Polarity: N-Channel
• I_DSS: 10000

• V_(BR)DSS: 30
• Q_G: 13

ZXMN10A25G Series N-Channel 100 V 0.125 Ohm Power MOSFET Surface Mount-SOT-223-3 [See More]

• Polarity: N-Channel
• Operating Mode: Enhancement; ENHANCEMENT MODE

• Transistor Technology / Material: SILICON
• V_(BR)DSS: 100

RS1E240BN is MOSFET for switching application that features Low on-resistance. [See More]

• Polarity: N-Channel
• I_DSS: 40000

• V_(BR)DSS: 30
• Q_G: 35

RQ5E035XN is a Small Signal MOSFET featuring low-on resistance and Built-in G-S Protection Diode. It is suitable for switching. [See More]

• Polarity: N-Channel
• I_DSS: 3500

• V_(BR)DSS: 30
• Q_G: 3.3

Power MOSFET RQ6E045BN is suitable for switching power supply. [See More]

• Polarity: N-Channel
• I_DSS: 4500

• V_(BR)DSS: 30
• Q_G: 8.4