N-Channel Power MOSFET

N-Channel NexFET? Power MOSFET 4-DSBGA -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0340

• V_(BR)DSS: 12
• I_DSS: 20200

Target Applications: - Battery Protection. - Load Switch High Side. - Load Switch Low Side [See More]

• Polarity: N-Channel
• Package Type: SO-8; SO-8

• Q_G: 130

SP8K52HZG is an automotive grade MOSFET that is AEC-Q101 qualified. Two Nch 100V MOSFETs are included in the SOP8 package. Built-in ESD protection diode. Ideal for switching applications. [See More]

• Polarity: N-Channel
• I_DSS: 3000

• V_(BR)DSS: 100
• Q_G: 8.5

N-Channel Power MOSFET, CSD13202Q2, 12V Vds, 9.3mohm Rdson4.5 (max) 6-WSON -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0093

• V_(BR)DSS: 12
• I_DSS: 76000

Target Applications: - Battery Protection. - Isolated Primary Side MOSFETs. - Isolated Secondary Side SyncRec MOSFETs. - Load Switch High Side. - Load Switch Low Side. - Point of Load ControlFET [See More]

• Polarity: N-Channel
• Package Type: PQFN 3.3 x 3.3 B/G

• Q_G: 15

HP8M51TB1 is low on-resistance and small surface mount package MOSFET. It is suitable for switching application. [See More]

• Polarity: N-Channel; P-Channel
• I_DSS: 4500

• V_(BR)DSS: 100
• Q_G: 8.5

N-Channel NexFET? Power MOSFET 6-DSBGA -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0200

• V_(BR)DSS: 12
• I_DSS: 31000

Home MOSFET, 20V-100V N-Channel Small Power MOSFET [See More]

• Polarity: N-Channel
• Package Type: PQFN 3.3 x 3.3 E

• Q_G: 15

Discrete Semiconductors, MOSFETs, 190 to 800V Power MOSFETs, Nch 190 to 250V MOSFETs [See More]

• Polarity: N-Channel
• I_DSS: 5000

• V_(BR)DSS: 250
• Q_G: 9

20-V N-Channel NexFET? Power MOSFET 6-WSON -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0192

• V_(BR)DSS: 20
• I_DSS: 22000

Target Applications: - Battery Protection. - DC Switches. - Isolated Primary Side MOSFETs. - Isolated Secondary Side SyncRec MOSFETs. - Load Switch. - Load Switch High Side. - Load Switch Low Side. - Point of Load ControlFET [See More]

• Polarity: N-Channel
• Package Type: PQFN 2 x 2

• Q_G: 8.7

The ultra-small package(1006size) RV2C010UN is suitable for portable devices. [See More]

• Polarity: N-Channel
• I_DSS: 1000

• V_(BR)DSS: 20
• P_D: 400

N-Channel NexFET? Power MOSFET 6-WSON -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0290

• V_(BR)DSS: 25
• I_DSS: 20000

Target Applications: - Battery Protection. - DC Switches. - Load Switch. - Load Switch High Side. - Load Switch Low Side [See More]

• Polarity: N-Channel
• Package Type: SOT23; SOT-23

• Q_G: 5.4

UT6MA3 is Low on-resistance Middle Power MOSFET for switching application. [See More]

• Polarity: N-Channel; P-Channel
• I_DSS: 5500

• V_(BR)DSS: 20
• Q_G: 4

N-Channel NexFET ™ Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0026

• V_(BR)DSS: 25
• I_DSS: 200000

Target Applications: - Battery Protection. - DC Switches. - Load Switch. - Load Switch High Side. - Load Switch Low Side [See More]

• Polarity: N-Channel
• Package Type: TSOP-6

• Q_G: 4.8

RJ1U330AAFRG is the high reliability automotive MOSFET, suitable for switching power supply. [See More]

• Polarity: N-Channel
• I_DSS: 33000

• V_(BR)DSS: 250
• Q_G: 80

DualCool? N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0026

• V_(BR)DSS: 25
• I_DSS: 200000

Target Applications: - DC Switches. - Load Switch [See More]

• Polarity: N-Channel
• Package Type: PQFN 2 x 2

• Q_G: 2.8

RD3U041AAFRA is an automotive grade MOSFET that is AEC-Q101 qualified, and suitable for switching applications. [See More]

• Polarity: N-Channel
• I_DSS: 4000

• V_(BR)DSS: 250
• Q_G: 8.5

N-Channel NexFET ™ Power MOSFETs 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0058

• V_(BR)DSS: 25
• I_DSS: 136000

Target Applications: - Onboard charger. - Mainboard. - Notebook. - DC-DC. - VRD/VRM. - LED. - Motor control [See More]

• Polarity: N-Channel
• Package Type: SuperSO8

• Q_G: 23

Two MOSFETs of 30V Pch and Nch (common drain configuration) are built in a symmetric dual package. Ideal for switching and motor drive applications. [See More]

• Polarity: N-Channel; P-Channel
• I_DSS: 7000

• V_(BR)DSS: 30
• Q_G: 4.7

DualCool? N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0058

• V_(BR)DSS: 25
• I_DSS: 136000

Target Applications: - Telecom. - Battery management [See More]

• Polarity: N-Channel
• T_J: -55 to ?

• Q_G: 195
• Package Type: TO-263; D2PAK 7pin (TO-263 7pin)

HP8K22 is low on-resistance MOSFET for DC/DC converter. [See More]

• Polarity: N-Channel
• I_DSS: 27000

• V_(BR)DSS: 30
• Q_G: 4.8

N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0055

• V_(BR)DSS: 25
• I_DSS: 112000

OptiMOS ™ Linear FET is a revolutionary approach to avoid the trade-off between on-state resistance (R DS(on)) and linear mode capability – operation in the saturation region of an enhanced mode MOSFET. It offers the state-of-the-art R DS(on) of a trench MOSFET together with the wide... [See More]

• Polarity: N-Channel
• T_J: ? to -55

• Q_G: 102
• Package Type: TO-263; D2PAK (TO-263)

The Middle Power MOSFET QH8KA4 is suitable for switching and battery applications. [See More]

• Polarity: N-Channel
• I_DSS: 9000

• V_(BR)DSS: 30
• Q_G: 12

Dual Cool N-Channel NexFET Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0055

• V_(BR)DSS: 25
• I_DSS: 112000

Power > Power > MOSFET > 20V-300V N-Channel Power MOSFET [See More]

• Polarity: N-Channel
• Package Type: TO-263; D2PAK (TO-263)

• Q_G: 63

HS8K1 is standard MOSFET for switching application. [See More]

• Polarity: N-Channel
• I_DSS: 10000

• V_(BR)DSS: 30
• Q_G: 2.7

N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0022

• V_(BR)DSS: 25
• I_DSS: 200000

Power > Power > MOSFET > 20V-300V N-Channel Power MOSFET [See More]

• Polarity: N-Channel
• Package Type: TO-263; D2PAK 7pin (TO-263 7pin)

• Q_G: 150

R6015KNZ is Low on-resistance and ultra fast switching speed Power MOSFET, suitable for the switching application. [See More]

• Polarity: N-Channel
• I_DSS: 15000

• V_(BR)DSS: 600
• Q_G: 27.5

DualCool? N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0022

• V_(BR)DSS: 25
• I_DSS: 200000

Target Applications: - Brushed Motor drive applications. - BLDC Motor drive applications. - Battery powered circuits. - Half-bridge and full-bridge topologies. - Synchronous rectifier applications. - Resonant mode power supplies. - OR-ing and redundant power switches. - DC/DC and AC/DC converters. -... [See More]

• Polarity: N-Channel
• Package Type: TO-263; D2PAK (TO-263)

• Q_G: 108

R6020KNZ4 is a power MOSFET for switching applications. [See More]

• Polarity: N-Channel
• I_DSS: 20000

• V_(BR)DSS: 600
• Q_G: 40

N-Channel NexFET Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0048

• V_(BR)DSS: 25
• I_DSS: 112000

Target Applications: - Consumer Full-Bridge. - Full-Bridge. - Push-Pull [See More]

• Polarity: N-Channel
• Package Type: TO-220; TO-220

• Q_G: 107

R6002END3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application. [See More]

• Polarity: N-Channel
• I_DSS: 2000

• V_(BR)DSS: 600
• Q_G: 6.5

25V, N Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0055

• V_(BR)DSS: 25
• I_DSS: 115000

Target Applications: - Desktop and Workstations. - Graphic Boards. - MultiPhase PowIRstage. - Servers and Storage [See More]

• Polarity: N-Channel

• Package Type: PQFN 6 x 6

The R6xxxKNx series are high-speed switching products, Super Junction MOSFETs, that place an emphasis on high efficiency. This series products achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits. [See More]

• Polarity: N-Channel
• I_DSS: 15000

• V_(BR)DSS: 650
• Q_G: 27.5

N-Channel NexFET? Power MOSFET.... 8-VSONP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0055

• V_(BR)DSS: 25
• I_DSS: 131000

Power > Power > MOSFET > 20V-300V N-Channel Power MOSFET [See More]

• Polarity: N-Channel
• Package Type: I2PAK (TO-262)

• Q_G: 44.7

RJ1P12BBD is a Power MOSFET with Low on - resistance, suitable for Switching. [See More]

• Polarity: N-Channel
• I_DSS: 120000

• V_(BR)DSS: 100
• Q_G: 51

N-Channel NexFET ™ Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0023

• V_(BR)DSS: 25
• I_DSS: 240000

Power > Power > MOSFET > 20V-300V N-Channel Power MOSFET [See More]

• Polarity: N-Channel
• Package Type: DirectFET MT

• Q_G: 46

RQ3P300BH is a power MOSFET with low on - resistance, suitable for switching. [See More]

• Polarity: N-Channel
• I_DSS: 39000

• V_(BR)DSS: 100
• Q_G: 18

N-Channel NexFET ™ Power MOSFET 8-VSONP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0037

• V_(BR)DSS: 25
• I_DSS: 184000

Power > Power > MOSFET > 20V-300V N-Channel Power MOSFET [See More]

• Polarity: N-Channel
• Package Type: DirectFET MX

• Q_G: 28

RS1P600BE is a power MOSFET with low on - resistance, suitable for DC/DC converters. [See More]

• Polarity: N-Channel
• I_DSS: 60000

• V_(BR)DSS: 100
• Q_G: 33

N-Channel NexFET ™ Power MOSFET 8-VSONP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0072

• V_(BR)DSS: 25
• I_DSS: 135000

Power > Power > MOSFET > 20V-300V N-Channel Power MOSFET [See More]

• Polarity: N-Channel
• Package Type: DirectFET ST

• Q_G: 18

RUF025N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

• Polarity: N-Channel
• I_DSS: 2500

• V_(BR)DSS: 20
• Q_G: 5

N-Channel NexFET ™ Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0074

• V_(BR)DSS: 25
• I_DSS: 114000

Target Applications: - AC-DC. - Battery Operated Drive. - Isolated Primary Side MOSFETs. - Isolated Secondary Side SyncRec MOSFETs. - Load Switch High Side [See More]

• Polarity: N-Channel
• Package Type: DirectFET MZ

• Q_G: 22

RUL035N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

• Polarity: N-Channel
• I_DSS: 3500

• V_(BR)DSS: 20
• Q_G: 5.7

N-Channel NexFET ™ Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0033

• V_(BR)DSS: 25
• I_DSS: 200000

Target Applications: - AC-DC. - Battery Operated Drive. - Class D Audio. - Isolated Primary Side MOSFETs. - Isolated Secondary Side SyncRec MOSFETs. - Load Switch High Side [See More]

• Polarity: N-Channel
• Package Type: DirectFET SH

• Q_G: 8.7

RF4E100AJ is high power small mold package(HUML2020L8) MOSFET for switching and DC/DC converter, battery switch application. [See More]

• Polarity: N-Channel
• I_DSS: 10000

• V_(BR)DSS: 30
• Q_G: 13

DualCool? N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0033

• V_(BR)DSS: 25
• I_DSS: 200000

Target Applications: - MultiPhase ControlFET [See More]

• Polarity: N-Channel
• Package Type: DirectFET SQ

• Q_G: 13

RQ5E035XN is a Small Signal MOSFET featuring low-on resistance and Built-in G-S Protection Diode. It is suitable for switching. [See More]

• Polarity: N-Channel
• I_DSS: 3500

• V_(BR)DSS: 30
• Q_G: 3.3

N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0068

• V_(BR)DSS: 25
• I_DSS: 141000

Target Applications: - eFuse. - HotSwap. - ORing [See More]

• Polarity: N-Channel
• T_J: -55 to 175

• Q_G: 64
• Package Type: DirectFET L6

Power MOSFET RQ6E045BN is suitable for switching power supply. [See More]

• Polarity: N-Channel
• I_DSS: 4500

• V_(BR)DSS: 30
• Q_G: 8.4

DualCool? N-Channel NexFET? Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0068

• V_(BR)DSS: 25
• I_DSS: 141000

Developed to serve today ’s and especially tomorrow ’s trends in flyback topologies – the new 700V CoolMOS ™ P7 series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction... [See More]

• Polarity: N-Channel
• Package Type: TO-252 (DPAK)

• Q_G: 16.4

RW4E045AJ is a MOSFET for DC/DC converters, switching, battery switches. [See More]

• Polarity: N-Channel
• I_DSS: 4500

• V_(BR)DSS: 30
• Q_G: 4

N-Channel NexFET ™ Power MOSFET 8-VSON-CLIP -55 to 150 [See More]

• Polarity: N-Channel
• r_DS(on): 0.0124

• V_(BR)DSS: 25
• I_DSS: 90000

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS ™ P7 technology focuses on the low-power SMPS market. Offering 50V more blocking voltage than its predecessor 900V CoolMOS ™ C3, the 950V CoolMOS ™ P7 series delivers outstanding... [See More]

• Polarity: N-Channel
• Package Type: TO-252 (DPAK)

• Q_G: 35

RJ1G12BGN is a Power MOSFET with Low on - resistance, suitable for Switching. [See More]

• Polarity: N-Channel
• I_DSS: 120000

• V_(BR)DSS: 40
• Q_G: 82

20V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE [See More]

• Polarity: N-Channel
• r_DS(on): 0.1000

• V_(BR)DSS: 20
• P_D: 2000

Karl Kruse  is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop... [See More]

• Polarity: N-Channel

Features: Rugged poly-Si gate. Lowest ON-resistance in the Industry. Avalanche rated. Hermetically Sealed, Isolated Package. Low Total Gate Charge. Fast Switching. Improved (RDS(ON) QG) Figure of Merit. Class H, K Screening Available. Consult Factory for Special Requirements such as Builtin Zener... [See More]

• Polarity: N-Channel
• r_DS(on): 318 to 340

• V_(BR)DSS: 1000
• I_DSS: 7.5 to 12

Self-Aligning Silicon Gate Sturcture. Low Transfer Capacitance - 0.2 pF typ. Low Input Capacitance - 2.4 pF typ. Low Output Capacitance - 1.3 pF typ. Low Gate Threadhold Voltage - 0.6V typ. [See More]

• Polarity: N-Channel
• Type: LDMOSFET

• Operating Mode: Enhancement
• V_(BR)DSS: 25

SP8K52FRA is the high reliability Automotive transistor, suitable for switching applications and motor drive. [See More]

• Polarity: N-Channel
• I_DSS: 3000

• V_(BR)DSS: 100
• Q_G: 8.5

20V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE [See More]

• Polarity: N-Channel
• r_DS(on): 0.0500

• V_(BR)DSS: 20
• P_D: 2000

QS8M51FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

• Polarity: N-Channel; P-Channel
• I_DSS: 2000

• V_(BR)DSS: 100
• Q_G: 4.7

25V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE [See More]

• Polarity: N-Channel; P-Channel

• Package Type: SO-8

Transistor [See More]

• Polarity: N-Channel
• I_DSS: 4000

• V_(BR)DSS: 250
• Q_G: 9

50V DUAL N-CHANNEL HEXFET POWER MOSFET IN A SO-8 PACKAGE [See More]

• Polarity: N-Channel

Transistor [See More]

• Polarity: N-Channel
• I_DSS: 5000

• V_(BR)DSS: 250
• Q_G: 9

55V DUAL N- AND P- CHANNEL HEXFET POWERMOSFET IN A SO-8 PACKAGE [See More]

• Polarity: N-Channel; P-Channel

• Package Type: SO-8

Transistor [See More]

• Polarity: N-Channel
• I_DSS: 5000

• V_(BR)DSS: 250
• Q_G: 9

Pwr MOSFET, 30V Dual N-and-P-Ch. HEXFET; SO-8 [See More]

• Polarity: N-Channel; P-Channel

• Package Type: SO-8

The ultra-small package(1006size) RV2C010UN is suitable for portable devices. [See More]

• Polarity: N-Channel
• I_DSS: 1000

• V_(BR)DSS: 20
• P_D: 400

Pwr MOSFET, 50V Dual N-Ch. HEXFET; SO-8 [See More]

• Polarity: N-Channel

RUF025N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

• Polarity: N-Channel
• I_DSS: 2500

• V_(BR)DSS: 20
• Q_G: 5

RUL035N02FRA is the high reliability Automotive MOSFET, suitable for the switching application. [See More]

• Polarity: N-Channel
• I_DSS: 3500

• V_(BR)DSS: 20
• Q_G: 5.7

RF4E100AJ is high power small mold package(HUML2020L8) MOSFET for switching and DC/DC converter, battery switch application. [See More]

• Polarity: N-Channel
• I_DSS: 10000

• V_(BR)DSS: 30
• Q_G: 13

RQ3E100BN is high power package(HSMT8) MOSFET for switching. [See More]

• Polarity: N-Channel
• I_DSS: 13500

• V_(BR)DSS: 30
• Q_G: 10.5

The small surface mount package RQ5E035BN is suitable for switching. [See More]

• Polarity: N-Channel
• I_DSS: 3500

• V_(BR)DSS: 30
• Q_G: 3.1

Power MOSFET RQ6E045BN is suitable for switching power supply. [See More]

• Polarity: N-Channel
• I_DSS: 4500

• V_(BR)DSS: 30
• Q_G: 8.4

R6010MND3 is fast trr power MOSFET, suitable for switching power supply. [See More]

• Polarity: N-Channel
• I_DSS: 10000

• V_(BR)DSS: 600
• Q_G: 20

R6015KNZ is Low on-resistance and ultra fast switching speed Power MOSFET. [See More]

• Polarity: N-Channel
• I_DSS: 15000

• V_(BR)DSS: 600
• Q_G: 27.5