Tray Power MOSFET
from Infineon Technologies AG
100V Dual 2N- and 2P- Channel MOSFET in a MO-036AB package - A IRFG5110 with Hermetic Packaging. Benefits. Hermetically packaged power MOSFET. Packaged on a MIL-PRF-19500 manufacturing line [See More]
- Packing Method: Tray; TRAY
- Package Type: C-DIP-14
- Polarity: 2N / 2P
from Win Source Electronics
Manufacturer: Texas Instruments. Win Source Part Number: 1323539-DRV8305NPHP. Category: Integrated Circuits (ICs) >Power Management (PMIC) >Motor Drivers, Controllers. Packaging: Tray. Applications: Three-Phase BLDC, PMSM Motors. Standard Package: 250. Mounting: Surface Mount. Technology:... [See More]
- Packing Method: Tray; Tray
- Package Type: SOT3; 48-PowerTQFP
- TJ: -40 to 125
from ROHM Semiconductor USA, LLC
BSM080D12P2C008 is a half bridge module consisting of SiC-DMOS and SiC SBD. [See More]
- Packing Method: Tray
- V(BR)DSS: 1200
- Transistor Technology / Material: SiC
- IDSS: 80000
from Universal Semiconductor, Inc.
Self-Aligning Silicon Gate Sturcture. Low Transfer Capacitance - 0.2 pF typ. Low Input Capacitance - 2.4 pF typ. Low Output Capacitance - 1.3 pF typ. Low Gate Threadhold Voltage - 0.6V typ. [See More]
- Packing Method: Tray
- Operating Mode: Enhancement
- Polarity: N-Channel
- Type: LDMOSFET
from ROHM Semiconductor GmbH
Half bridge module consisting of ROHM SiC-DMOSFETs. [See More]
- Packing Method: Tray
- IDSS: 204000
- V(BR)DSS: 1200
- PD: 1.36E6