PHEMT Transistors
Last Updated: January 31, 2025
Description
Pseudomorphic high electron mobility transistors (PHEMTs) are specialized transistors used primarily in RF applications. They are designed to provide high power gain and low noise figures, making them suitable for amplifying signals in various communication systems.
Working Principle
PHEMTs operate by utilizing a heterostructure that creates a high electron mobility channel. This structure allows for efficient electron flow, which results in high transconductance and low noise operation. The pseudomorphic layer in PHEMTs is engineered to enhance electron mobility, which is crucial for high-frequency applications. This makes PHEMTs particularly useful in scenarios where high linearity and gain are required, such as in amplifiers for wireless communication systems.
Applications
PHEMTs are widely used in wireless devices and satellite communication systems. They are integral components in power amplifiers (PAs) and low noise amplifiers (LNAs), which are essential for enhancing signal strength and clarity in communication devices. Specific applications include use in cellular base stations and satellite transceivers, where their ability to handle high frequencies and provide low noise amplification is critical.
Advantages over other Transistors
PHEMTs offer several advantages over other types of transistors, such as GaAs MESFETs and silicon-based transistors. They provide higher gain and better noise performance, which is crucial for RF applications. Additionally, PHEMTs can operate at higher frequencies, making them suitable for modern communication systems that require broadband capabilities. Their high linearity and efficiency also make them preferable in applications where signal integrity is paramount.
Limitations
Despite their advantages, PHEMTs have limitations, including higher initial costs compared to some other transistor types. They may also require more complex biasing and matching networks, which can increase design complexity and cost. Additionally, PHEMTs can be more sensitive to thermal and electrical stresses, which may affect their reliability and lifespan in certain applications.
Considerations
When considering PHEMTs for a project, it's important to evaluate the initial costs and potential operating expenses. While they offer superior performance, the complexity of their integration into circuits can lead to higher design and maintenance costs. Durability and accuracy are generally high, but careful thermal management is necessary to ensure longevity. Replacement and maintenance costs should also be factored in, as PHEMTs may require more frequent calibration or replacement in high-stress environments.
from Qorvo
The RFAM3620 is an Integrated Edge QAM Amplifier Module. The part employs GaAs pHEMT die, GaAs MESFET die, a 20 dB range variable attenuator and a power enable feature, has high output capability, and is operated from 45 MHz to 1218 MHz. It provides excellent linearity and superior return loss... [See More]
- Transistor Type: MESFET; HEMT; PHEMT
- Package Type: SMD
- Transistor Technology / Material: GaAs
from Win Source Electronics
Win Source Part Number: 1013427-MRFG35010AR1. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Tape & Reel (TR). Standard Package: 500. Voltage - Rated: 15 V. Frequency: 3.55GHz. Current - Test: 140 mA. Gain: 10dB. Transistor Type: pHEMT FET. Voltage -... [See More]
- Transistor Type: MOSFET; MOSFET RF; PHEMT
- Package Type: SOT3
from Richardson RFPD
The EC2612 is based on a 0.15 µm gate pseudomorphic high electron mobility transistor (0.15 µm PHEMT) technology. Gate width is 120 µm and the 0.15 µm T-shaped aluminum gate features low resistance and excellent reliability. The device shows a very high transconductance which... [See More]
- Transistor Type: PHEMT
- Package Type: Chip
from Win Source Electronics
Win Source Part Number: 1033180-MRFG35020AR1. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Tape & Reel (TR). Standard Package: 500. Voltage - Rated: 15 V. Frequency: 3.5GHz. Current - Test: 300 mA. Gain: 11.5dB. Transistor Type: pHEMT FET. Voltage -... [See More]
- Transistor Type: MOSFET; MOSFET RF; PHEMT
- Package Type: SOT3
from Win Source Electronics
Win Source Part Number: 1080268-MRFG35010NR5. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Tape & Reel. Standard Package: 50. Voltage - Rated: 15 V. Frequency: 3.55GHz. Current - Test: 180 mA. Gain: 10dB. Transistor Type: pHEMT FET. Voltage - Test: 12... [See More]
- Transistor Type: MOSFET; MOSFET RF; PHEMT
- Package Type: SOT3
from Win Source Electronics
Alternative Parts (Cross-Reference): Cross. Manufacturer: CEL. Category: Discrete Semiconductor Products Transistors FETs, MOSFETs RF FETs, MOSFETs. Product Status: Active. Technology: pHEMT FET. Frequency: 12GHz. Gain: 12.2dB. Voltage - Test: 2 V. Current Rating (Amps): 68mA. Noise Figure: 0.62dB. [See More]
- Transistor Type: MOSFET; MOSFET RF; PHEMT
- Package Type: SOT3
from Win Source Electronics
Manufacturer: Broadcom Limited. Win Source Part Number: 912073-ATF-53189-BLK. Features: RF Mosfet E-pHEMT 4 V 135 mA 900MHz 17.2dB 21.7dBm SOT-89-3. Package: Bulk. Package: TO-243AA. Part Status: Obsolete. Categories: Discrete Semiconductor Products. Case / Package: SOT-89-3. ECCN: EAR99. [See More]
- Transistor Type: PHEMT
- Package Type: SOT3; SOT89; SOT-89-3
from Win Source Electronics
Manufacturer: Broadcom Limited. Win Source Part Number: 089390-ATF-53189-TR1. Packaging: Reel - TR. Voltage Rating: 7V. Current Rating: 300mA. Frequency: 900MHz. Current - Test: 135mA. Gain: 17.2dB. Transistor Polarity: pHEMT FET. Voltage - Test: 4V. Noise Figure: 0.8dB. Power - Output: 21.7dBm. [See More]
- Transistor Type: PHEMT
- Package Type: SOT3; SOT89; SOT-89-3
- Polarity: pHEMT FET
from Win Source Electronics
Manufacturer: Broadcom Limited. Win Source Part Number: 1020189-ATF-541M4-TR2. Packaging: Reel - TR. Voltage Rating: 5V. Current Rating: 120mA. Frequency: 2GHz. Current - Test: 60mA. Gain: 17.5dB. Transistor Polarity: pHEMT FET. Voltage - Test: 3V. Noise Figure: 0.5dB. Power - Output: 21.4dBm. [See More]
- Transistor Type: PHEMT
- Package Type: SOT3; MiniPak 1412
- Polarity: pHEMT FET
from Win Source Electronics
Manufacturer: Broadcom Limited. Win Source Part Number: 010385-ATF-551M4-TR1. Packaging: Reel - TR. Voltage Rating: 5V. Current Rating: 100mA. Frequency: 2GHz. Current - Test: 10mA. Gain: 17.5dB. Transistor Polarity: pHEMT FET. Voltage - Test: 2.7V. Noise Figure: 0.5dB. Power - Output: 14.6dBm. [See More]
- Transistor Type: PHEMT
- Package Type: SOT3; MiniPak 1412
- Polarity: pHEMT FET
from Win Source Electronics
Manufacturer: Broadcom Limited. Win Source Part Number: 129570-ATF-551M4-TR2. Packaging: Reel - TR. Voltage Rating: 5V. Current Rating: 100mA. Frequency: 2GHz. Current - Test: 10mA. Gain: 17.5dB. Transistor Polarity: pHEMT FET. Voltage - Test: 2.7V. Noise Figure: 0.5dB. Power - Output: 14.6dBm. [See More]
- Transistor Type: PHEMT
- Package Type: SOT3; MiniPak 1412
- Polarity: pHEMT FET
from Win Source Electronics
Manufacturer: Freescale Semiconductor - NXP. Win Source Part Number: 1226964-MRFG35003ANT1. Manufacturer Homepage: www.freescale.com. Popularity: Medium. Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Limited [See More]
- Transistor Type: PHEMT
- Package Type: SOT3
from Win Source Electronics
Manufacturer: Freescale Semiconductor - NXP. Win Source Part Number: 1226966-MRFG35010. Manufacturer Homepage: www.freescale.com. RoHS State: Request Verification. Popularity: Medium. Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited [See More]
- Transistor Type: PHEMT
- Package Type: SOT3
from Win Source Electronics
Manufacturer: Freescale Semiconductor - NXP. Win Source Part Number: 1226967-MRFG35010NT1. Manufacturer Homepage: www.freescale.com. Popularity: Medium. Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance [See More]
- Transistor Type: PHEMT
- Package Type: SOT3
from Win Source Electronics
Manufacturer: Freescale Semiconductor - NXP. Win Source Part Number: 1226968-MRFG35010R1. Manufacturer Homepage: www.freescale.com. Popularity: Medium. Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited [See More]
- Transistor Type: PHEMT
- Package Type: SOT3
from Broadcom Inc.
Avago Technologies has combined its industry leading E-PHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that generates off of a single position DC power supply. [See More]
- Transistor Type: PHEMT; E-pHEMT
- Package Type: Sub-miniature 0402
- Transistor Technology / Material: GaAs
- Transistor Grade / Operating Range: Commercial; Industrial; Military
from ODG (Origin Data Global)
FET RF 5.5V 2GHZ SOT-343 [See More]
- Transistor Type: MOSFET; MOSFET RF; PHEMT; pHEMT FET
- Package Type: SC-82A, SOT-343
- Transistor Technology / Material: pHEMT FET
from Utmel Electronic Limited
Trans JFET 15V GaAs pHEMT 3-Pin PLD-1.5 T/R [See More]
- Transistor Type: JFET; PHEMT
- Transistor Technology / Material: GALLIUM ARSENIDE
- Polarity: N-Channel; N-CHANNEL
from Broadcom Inc.
Avago Technologies has combined its industry leading E-pHEMT technology with a revolutionary chip scale package. This product is easy to use since it requires only positive DC voltages for bias and no matching coefficients are required for impedance matching to 50 Ω systems. [See More]
- Transistor Type: PHEMT; E-pHEMT
- Package Type: Sub-miniature 0402
- Transistor Technology / Material: GaAs
- Transistor Grade / Operating Range: Commercial; Industrial; Military
from ODG (Origin Data Global)
FET RF 3V 12GHZ 77-SMD [See More]
- Transistor Type: MOSFET; MOSFET RF; PHEMT; pHEMT FET
- Package Type: 4-SMD (77 Pack)
- Transistor Technology / Material: pHEMT FET
from Utmel Electronic Limited
Trans JFET N-CH 5V 100mA GaAs pHEMT 4-Pin Mini-PAK T/R [See More]
- Transistor Type: JFET; PHEMT
- Polarity: N-Channel; N-CHANNEL
from Broadcom Inc.
Avago Technologies has combined its industry leadingE-pHEMT technology with a revolutionary chip scale package. This product is easy to use since it requires only positive DC voltages for bias and no matching coefficients are required for impedance matching to 50 Ω systems. [See More]
- Transistor Type: PHEMT; E-pHEMT
- Package Type: Sub-miniature 0402
- Transistor Technology / Material: GaAs
- Transistor Grade / Operating Range: Commercial; Industrial; Military
from ODG (Origin Data Global)
FET RF 3V 12GHZ 77-SMD [See More]
- Transistor Type: MOSFET; MOSFET RF; PHEMT; pHEMT FET
- Package Type: 4-SMD (77 Pack)
- Transistor Technology / Material: pHEMT FET
from Broadcom Inc.
ATF-35143 is a high dynamic range, low noise, PHEMT housed in a 4-lead SC-70 surface mount plastic package. [See More]
- Transistor Type: PHEMT
- Package Type: SOT-343, SC-70
from ODG (Origin Data Global)
FET RF 3V 4GHZ SOT-363 [See More]
- Transistor Type: MOSFET; MOSFET RF; PHEMT; pHEMT FET
- Package Type: 6-TSSOP, SC-88, SOT-363
- Transistor Technology / Material: pHEMT FET
from Broadcom Inc.
Ultra low noise PHEMT packaged in a 1.4mm x 1.2mm x 0.7mm thin miniature leadless package. Its small size, high linearity and low noise figure is optimized for the design of hybrid module or first or second stage of basestation LNA. The device is also suitable for applications in Wireless LAN, fixed... [See More]
- Transistor Type: PHEMT
- Package Type: Miniature Leadless Package
from ODG (Origin Data Global)
FET RF 7V 2GHZ SOT-89 [See More]
- Transistor Type: MOSFET; MOSFET RF; PHEMT; E-pHEMT
- Package Type: SOT89; TO-243AA
- Transistor Technology / Material: E-pHEMT
from Broadcom Inc.
Ultra low noise PHEMT. The process is optimized to give very low noise figure for critical DBS and other wireless RF applications. NF=1.0dB, Ga=9.4dB, P1dB= 5dBm at 2V, 15mA (12 GHz) [See More]
- Transistor Type: PHEMT
- Package Type: SOT-363 (SC70)
from ODG (Origin Data Global)
FET RF 7V 2GHZ 8-LPCC [See More]
- Transistor Type: MOSFET; MOSFET RF; PHEMT; E-pHEMT
- Package Type: 8-WFDFN Exposed Pad
- Transistor Technology / Material: E-pHEMT
from Broadcom Inc.
Enhanced-mode PHEMT technology requires only a single positive voltage source. This high gain, high linearity, low noise transistor is optimized for receiver designs in cellular/PCS/WCDMA base stations, wireless local loop and other applications require low noise and high linearity performance in... [See More]
- Transistor Type: PHEMT; E-pHEMT
- Package Type: SOT-343, SC-70
from ODG (Origin Data Global)
IC TRANS E-PHEMT GAAS MINIPAK [See More]
- Transistor Type: MOSFET; MOSFET RF; PHEMT; pHEMT FET
- Package Type: 0505 (1412 Metric)
- Transistor Technology / Material: pHEMT FET
from Broadcom Inc.
Single-voltage high linearity, low noise E-pHEMT housed in an 8-lead LPCC (JEDEC DFP-N) package. The device exhibits exceptional RF performance, power efficiency and product consistency in the 50MHz to 6 GHz frequency range. [See More]
- Transistor Type: PHEMT; E-pHEMT
- Package Type: LLPC
from ODG (Origin Data Global)
RF FET 4V 12GHZ 4MICROX [See More]
- Transistor Type: MOSFET; MOSFET RF; PHEMT; pHEMT FET
- Package Type: 4-Micro-X
- Transistor Technology / Material: pHEMT FET
from ODG (Origin Data Global)
RF MOSFET PHEMT FET 2V [See More]
- Transistor Type: MOSFET; MOSFET RF; PHEMT; pHEMT FET
- Package Type: 4-SMD, Flat Leads
- Transistor Technology / Material: pHEMT FET
from ODG (Origin Data Global)
FET RF 15V 3.55GHZ PLD-1.5 [See More]
- Transistor Type: MOSFET; MOSFET RF; PHEMT; pHEMT FET
- Package Type: PLD-1.5
- Transistor Technology / Material: pHEMT FET
from ODG (Origin Data Global)
RF MOSFET E-PHEMT 3V SC70-4 [See More]
- Transistor Type: MOSFET; MOSFET RF; PHEMT; E-pHEMT
- Package Type: SC-82A, SOT-343
- Transistor Technology / Material: E-pHEMT
from ODG (Origin Data Global)
RF MOSFET E-PHEMT 3V FG873 [See More]
- Transistor Type: MOSFET; MOSFET RF; PHEMT; E-pHEMT
- Package Type: 4-SMD, No Lead
- Transistor Technology / Material: E-pHEMT
from ODG (Origin Data Global)
SMT LOW NOISE AMPLIFIER, 400 - 3 [See More]
- Transistor Type: MOSFET; MOSFET RF; PHEMT; E-pHEMT
- Package Type: 8-TFDFN Exposed Pad
- Transistor Technology / Material: E-pHEMT