Military Transistors

59 Results
0.03 - 1.215 GHz, 15 Watt, 28 Volt GaN RF Input-Matched Transistor -- QPD1000
from Qorvo

Qorvo's QPD1000 is a 15W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 1.215 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within... [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: DFN
  • Transistor Technology / Material: 0.03 - 1.215 GHz, 15 Watt, 28 Volt GaN RF Input-Matched Transistor
Bipolar RF Transistors -- 150-JAN2N2857-ND [JAN2N2857 from Microchip Technology, Inc.]
from DigiKey

RF Transistor NPN 15V 40mA 500MHz 200mW Through Hole TO-72 [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: TO-72-3 Metal Can
  • Polarity: NPN
0.03 - 3 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor -- TGF2965-SM
from Qorvo

Qorvo's TGF2965-SM is a 6W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 0.03 to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the... [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: QFN
  • Transistor Technology / Material: GaN
Bipolar RF Transistors -- 150-JANS2N2857UB-LC-ND [JANS2N2857UB-LC from Microchip Technology, Inc.]
from DigiKey

RF Transistor NPN 15V 40mA 200mW Surface Mount UB [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: 3-SMD, No Lead
  • Polarity: NPN
0.03 - 3.0 GHz, 10 Watt, 32 Volt GaN RF Input-Matched Transistor -- TGF3015-SM
from Qorvo

Qorvo's TGF3015-SM is a 10W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within... [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: QFN
  • Transistor Technology / Material: 0.03 - 3.0 GHz, 10 Watt, 32 Volt GaN RF Input-Matched Transistor
Bipolar RF Transistors -- 150-JANTX2N2857-ND [JANTX2N2857 from Microchip Technology, Inc.]
from DigiKey

RF Transistor NPN 15V 40mA 500MHz 200mW Through Hole TO-72 [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: TO-72-3 Metal Can
  • Polarity: NPN
0.03 - 4.0 GHz, 30 Watt, 32 V GaN RF Transistor -- TGF3021-SM
from Qorvo

Qorvo's TGF3021-SM is a 30 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 4 GHz and a 32V supply rail. The device is in an industry standard 3x4mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications,... [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: QFN
  • Transistor Technology / Material: GaN
Bipolar Transistor Arrays -- 1086-15158-ND [JANS2N2920 from Microchip Technology, Inc.]
from DigiKey

Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 30mA 350mW Through Hole TO-18 [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: TO-78-6 Metal Can
  • Polarity: NPN
1.2 - 1.4 GHz, 375 Watt, 65 Volt , GaN on SiC RF Transistor -- QPD1425L
from Qorvo

The QPD1425L is a 375W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 56.3dBm of saturated output power with 17dB of large-signal gain and 75% of drain efficiency. Input pre-match within the package results in ease of external board match and saves board space. The... [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: NI-400
  • Transistor Technology / Material: 1.2 - 1.4 GHz, 375 Watt, 65 Volt , GaN on SiC RF Transistor
Bipolar Transistor Arrays -- 1086-15532-ND [JANTX2N5796U from Microchip Technology, Inc.]
from DigiKey

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 600mA 600mW Surface Mount 6-SMD [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: 6-SMD, No Lead
  • Polarity: PNP
1.2 - 1.4 GHz, 375 Watt, 65 Volt, GaN on SiC RF Transistor -- QPD1425
from Qorvo

The QPD1425 is a 375W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 56.3dBm of saturated output power with 17dB of large-signal gain and 75% of drain efficiency. Input pre-match within the package results in ease of external board match and saves board space. The... [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: NI-400
  • Transistor Technology / Material: 1.2 - 1.4 GHz, 375 Watt, 65 Volt, GaN on SiC RF Transistor
Bipolar Transistor Arrays -- 1086-15606-ND [JANTXV2N5794 from Microchip Technology, Inc.]
from DigiKey

Bipolar (BJT) Transistor Array 2 NPN (Dual) 40V 600mA 600mW Through Hole TO-78-6 [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: TO-78-6 Metal Can
  • Polarity: NPN
1.2 - 1.4 GHz, 500 Watt, 50 Volt, GaN RF IMFET -- QPD1003
from Qorvo

Qorvo's QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 ohm in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can... [See More]

  • Transistor Grade / Operating Range: Military
  • Transistor Technology / Material: GaN
  • Transistor Type: IMFET
  • Package Type: RF-565
Bipolar Transistor Arrays -- 1086-3086-ND [JANTXV2N3810 from Microchip Technology, Inc.]
from DigiKey

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6 [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: TO-78-6 Metal Can
  • Polarity: PNP
1.2 - 1.4 GHz, 750 Watt, 65 Volt GaN on SiC RF Transistor -- QPD1028L
from Qorvo

The QPD1028L is a 750W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency. Input pre-match within the package results in ease of external board match and saves board space. The... [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: NI-780
  • Transistor Technology / Material: 1.2 - 1.4 GHz, 750 Watt, 65 Volt GaN on SiC RF Transistor
Bipolar Transistor Arrays -- 1086-3087-ND [JANTXV2N3810L from Microchip Technology, Inc.]
from DigiKey

Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6 [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: TO-78-6 Metal Can
  • Polarity: PNP
1.2 - 1.4 GHz, 750 Watt, 65 Volt, GaN on SiC RF Transistor -- QPD1028
from Qorvo

The QPD1028 is a 750W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency. Input pre-match within the package results in ease of external board match and saves board space. The... [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: NI-780
  • Transistor Technology / Material: 1.2 - 1.4 GHz, 750 Watt, 65 Volt, GaN on SiC RF Transistor
Bipolar Transistor Arrays -- 1086-3097-ND [JANTXV2N6989 from Microchip Technology, Inc.]
from DigiKey

Bipolar (BJT) Transistor Array 4 NPN (Quad) 50V 800mA 1.5W Through Hole TO-116 [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: 14-DIP (0.300", 7.62mm)
  • Polarity: NPN
13.5 Watt, 48 Volt, 2.5 - 5.0 GHz, GaN on SiC RF Transistor -- QPD0006
from Qorvo

The QPD0006 is a single-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 2.5 to 5.0 GHz. It is a single-stage, unmatched transistor capable of delivering P3dB of 13.5 W at +48 V operation. Lead free and RoHS compliant. [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: DFN
  • Transistor Technology / Material: 13.5 Watt, 48 Volt, 2.5 - 5.0 GHz, GaN on SiC RF Transistor
Bipolar Transistor Arrays -- 1086-3098-ND [JANTXV2N6990 from Microchip Technology, Inc.]
from DigiKey

Bipolar (BJT) Transistor Array 4 NPN (Quad) 50V 800mA 400mW Surface Mount 14-Flatpack [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: 14-Flatpack
  • Polarity: NPN
1300 Watt, 65 Volt, 420 - 450 MHz GaN RF Input-Matched Transistor -- QPD1026L
from Qorvo

The Qorvo QPD1026L is a 1300 W (P3dB) discrete GaN on SiC HEMT which operates from 420 to 450 MHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for amateur radio, public... [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: NI-1230 (Eared)
  • Transistor Technology / Material: 1300 Watt, 65 Volt, 420 - 450 MHz GaN RF Input-Matched Transistor
Bipolar Transistor Arrays -- 150-JAN2N2920U/TR-ND [JAN2N2920U/TR from Microchip Technology, Inc.]
from DigiKey

Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 30mA 350mW Surface Mount 3-SMD [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: 6-SMD, No Lead
  • Polarity: NPN
15 Watt, 50 Volt, 0.03 - 1.2 GHz, GaN RF Input-Matched Transistor -- QPD1014
from Qorvo

The QPD1014 is a 15W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30MHz to 1200MHz on a 50V supply rail. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any... [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: DFN
  • Transistor Technology / Material: GaN
Bipolar Transistor Arrays -- 150-JANS2N3810L/TR-ND [JANS2N3810L/TR from Microchip Technology, Inc.]
from DigiKey

Bipolar (BJT) Transistor Array 2 PNP (Dual) Through Hole TO-78-6 [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: TO-78-6 Metal Can
  • Polarity: PNP
1500 Watt, 65 Volt, 1.2 - 1.4 GHz, GaN RF Input-Matched Transistor -- QPD1029L
from Qorvo

The Qorvo QPD1029L is a 1500 W (P3dB) discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and... [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: NI-1230 (Eared)
  • Transistor Technology / Material: 1500 Watt, 65 Volt, 1.2 - 1.4 GHz, GaN RF Input-Matched Transistor
JFETs -- 2N3823-ND [2N3823 from Microchip Technology, Inc.]
from DigiKey

JFET N-Channel 30V 300mW Through Hole TO-72 [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: TO-206AF, TO-72-4 Metal Can
  • Polarity: N-Channel
1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor -- QPD1025
from Qorvo

The Qorvo QPD1025 is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96 to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and... [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: NI-1230 (Earless)
  • Transistor Technology / Material: 1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor
Single Bipolar Transistors -- 1086-1076-ND [JANTX2N2945A from Microchip Technology, Inc.]
from DigiKey

Bipolar (BJT) Transistor PNP 20V 100mA 400mW Through Hole TO-46-3 [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: TO-206AB, TO-46-3 Metal Can
  • Polarity: PNP
1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor -- QPD1025L
from Qorvo

The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and... [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: NI-1230 (Eared)
  • Transistor Technology / Material: 1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor
Single Bipolar Transistors -- 1086-15157-ND [JANS2N2905A from Microchip Technology, Inc.]
from DigiKey

Bipolar (BJT) Transistor PNP 60V 600mA 800mW Through Hole TO-39 [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: TO-3; TO-39; TO-205AD, TO-39-3 Metal Can
  • Polarity: PNP
2.5 - 5.0 GHz, 8 Watt, 48 Volt GaN RF Transistor -- QPD0005
from Qorvo

The QPD0005 is a single-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 2.5 to 5.0 GHz. It is a single-stage, unmatched transistor capable of delivering PSAT of 8.7 W at +48 V operation. Lead free and RoHS compliant. [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: DFN
  • Transistor Technology / Material: 2.5 - 5.0 GHz, 8 Watt, 48 Volt GaN RF Transistor
Single Bipolar Transistors -- 1086-15159-ND [JANS2N3019 from Microchip Technology, Inc.]
from DigiKey

Bipolar (BJT) Transistor NPN 80V 1A 800mW Through Hole TO-5 [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: TO-205AA, TO-5-3 Metal Can
  • Polarity: NPN
3.1 - 3.5 GHz, 450 Watt, 50 V GaN RF IMFET -- QPD1017
from Qorvo

The QPD1017 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 3.1 to 3.5 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 ohm in an industry standard air cavity package and is ideally suited for military radar. ROHS compliant. Evaluation boards... [See More]

  • Transistor Grade / Operating Range: Military
  • Transistor Technology / Material: GaN
  • Transistor Type: IMFET
  • Package Type: RF-565
Single Bipolar Transistors -- 1086-15247-ND [JAN2N6299 from Microchip Technology, Inc.]
from DigiKey

Bipolar (BJT) Transistor PNP - Darlington 80V 8A 64W Through Hole [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: TO-213AA, TO-66-2
  • Polarity: PNP
30 - 1200 MHz, 25 Watt, 50 Volt GaN RF Input-Matched Transistor -- QPD1004
from Qorvo

The Qorvo QPD1004 is a 25W (P3dB), 50 Ohm input matched discrete GaN on SiC HEMT which operates from 30 to 1200 MHz on a 50 V supply rail. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for... [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: DFN
  • Transistor Technology / Material: 30 - 1200 MHz, 25 Watt, 50 Volt GaN RF Input-Matched Transistor
Single Bipolar Transistors -- 1086-15248-ND [JAN2N6351 from Microchip Technology, Inc.]
from DigiKey

Bipolar (BJT) Transistor NPN - Darlington 150V 5A 1W Through Hole TO-33 [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: TO-3; TO-205AC, TO-33-4 Metal Can
  • Polarity: NPN
30 Watt, 28 Volt, 9.2 - 9.7 GHz, GaN RF IMFET -- QPD9300
from Qorvo

The QPD9300 is a 30 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 9.2 to 9.7 GHz and a 28 V supply rail. The device is fully matched to 50 Ω in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support pulsed... [See More]

  • Transistor Grade / Operating Range: Military
  • Transistor Technology / Material: 30 Watt, 28 Volt, 9.2 - 9.7 GHz, GaN RF IMFET
  • Transistor Type: IMFET
  • Package Type: EHS Laminate
Single Bipolar Transistors -- 1086-15486-ND [JANTX2N1485 from Microchip Technology, Inc.]
from DigiKey

Bipolar (BJT) Transistor NPN 40V 3A 1.75W Through Hole TO-8 [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: TO-8; TO-233AA, TO-8-3 Metal Can
  • Polarity: NPN
4 - 6 GHz, 5 Watt, 32 V, 50 Ohm GaN RF Input-Matched Transistor -- TGF3020-SM
from Qorvo

Qorvo's TGF3020-SM is a 5W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the... [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: QFN
  • Transistor Technology / Material: GaN
Single Bipolar Transistors -- 1086-15502-ND [JANTX2N3055 from Microchip Technology, Inc.]
from DigiKey

Bipolar (BJT) Transistor NPN 70V 15A 6W Through Hole TO-3 (TO-204AA) [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: TO-3; TO-204AA, TO-3
  • Polarity: NPN
450 Watt, 50 Volt, 1.2 - 1.4 GHz GaN IMFET -- QPD1006
from Qorvo

The QPD1006 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 ohm in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support... [See More]

  • Transistor Grade / Operating Range: Military
  • Transistor Technology / Material: 450 Watt, 50 Volt, 1.2 - 1.4 GHz GaN IMFET
  • Transistor Type: IMFET
  • Package Type: Ni50-CW
Single Bipolar Transistors -- 1086-15504-ND [JANTX2N3439UA from Microchip Technology, Inc.]
from DigiKey

Bipolar (BJT) Transistor NPN 350V 1A 800mW Surface Mount UA [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: 4-SMD, No Lead
  • Polarity: NPN
500 Watt, 50 Volt, 2.7 - 3.1 GHz, GaN RF IMFET -- QPD1018
from Qorvo

The QPD1018 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 2.7 to 3.1 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 ohm in an industry standard air cavity package and is ideally suited for military radar. ROHS compliant. Evaluation boards... [See More]

  • Transistor Grade / Operating Range: Military
  • Transistor Technology / Material: GaN
  • Transistor Type: IMFET
  • Package Type: RF-565
Single Bipolar Transistors -- 1086-15505-ND [JANTX2N3442 from Microchip Technology, Inc.]
from DigiKey

Bipolar (BJT) Transistor NPN 140V 10A 6W Through Hole TO-3 [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: TO-3; TO-204AA, TO-3
  • Polarity: NPN
500 Watt, 50 Volt, 2.9 - 3.3 GHz, GaN RF IMFET -- QPD1019
from Qorvo

The QPD1019 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 2.9 to 3.3 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 ohm in an industry standard air cavity package and is ideally suited for military radar. Lead-free and ROHS compliant. [See More]

  • Transistor Grade / Operating Range: Military
  • Transistor Technology / Material: GaN
  • Transistor Type: IMFET
  • Package Type: RF-565
Single Bipolar Transistors -- 1086-15511-ND [JANTX2N3716 from Microchip Technology, Inc.]
from DigiKey

Bipolar (BJT) Transistor NPN 80V 10A 5W Through Hole TO-204AA (TO-3) [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: TO-3; TO-204AA, TO-3
  • Polarity: NPN
500 Watt, 50 Volt, DC - 1.7 GHz, GaN RF Transistor -- QPD1016
from Qorvo

The Qorvo QPD1016 is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation. The device can support... [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: NI-780
  • Transistor Technology / Material: GaN
Single Bipolar Transistors -- 1086-15512-ND [JANTX2N3740 from Microchip Technology, Inc.]
from DigiKey

Bipolar (BJT) Transistor PNP 60V 4A 25W Through Hole [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: TO-213AA, TO-66-2
  • Polarity: PNP
500 Watt, 50 Volt, DC - 1.7 GHz, GaN RF Transistor -- QPD1016L
from Qorvo

The Qorvo QPD1016L is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation. The device can support... [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: NI-780
  • Transistor Technology / Material: GaN
Single Bipolar Transistors -- 1086-15515-ND [JANTX2N3772 from Microchip Technology, Inc.]
from DigiKey

Bipolar (BJT) Transistor NPN 60V 20A 6W Through Hole TO-3 [See More]

  • Transistor Grade / Operating Range: Military
  • Package Type: TO-3; TO-204AA, TO-3
  • Polarity: NPN
2.75 - 3.75, 400W GaN on SiC HPA -- CGHV38375F
from Wolfspeed

Wolfspeed ’s CGHV38375F is a packaged, 400 W HPA matched to 50 ohms at both input and output ports. The CGHV38375F operates from 2.75 – 3.75 GHz providing coverage over the entire S-band radar band. This high-power amplifier provides >10 dB of large signal gain and 40% power-added... [See More]

  • Transistor Grade / Operating Range: Commercial; Industrial; Military
  • Transistor Technology / Material: 2.75 - 3.75, 400W GaN on SiC HPA
0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package -- VMMK-1218
from Broadcom Inc.

Avago Technologies has combined its industry leading E-PHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that generates off of a single position DC power supply. [See More]

  • Transistor Grade / Operating Range: Commercial; Industrial; Military
  • Transistor Technology / Material: GaAs
  • Transistor Type: PHEMT; E-pHEMT
  • Package Type: Sub-miniature 0402
Avalanche Rated P-channel MOSFET Transistor -- SFF110P20FP5
from Solid State Devices, Inc.

Features: TrenchMOS technology. Lowest ON-resistance in the industry. Avalanche rated. Hermetically Sealed, Hot Case power SMD. Low Total Gate Charge. Fast Switching. TX, TXV, S-Level screening available 2/. Improved (RDS(ON) QG) figure of merit [See More]

  • Transistor Grade / Operating Range: Military
  • Polarity: P-Channel
  • Transistor Type: MOSFET
  • Package Type: FP5 in Flat Pack
Bipolar RF Transistors
from Northrop Grumman Corporation

WPTB32A0912Ax 960-1215 MHz Bipolar RF Transistor. The WPTB32A0912Ax application-specific transistor uses the 3217 L-Band die which was developed for pulsed radar systems. Optimal internal matching delivers high performance for applications such as the MIDS and JTIDS communication systems. Low... [See More]

  • Transistor Grade / Operating Range: Military
  • Transistor Technology / Material: SiC
  • Transistor Type: Bipolar RF
Bipolar Transistor -- 2N0918
from Semicoa

SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also available in die form... [See More]

  • Transistor Grade / Operating Range: Military
  • Polarity: NPN
  • Transistor Type: BJT
  • Package Type: TO-72 UB
Matched Transistor Array -- 1380G21
from TT Semiconductor, Inc.

The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25 ohms for the PNP devices (30 ohms for... [See More]

  • Transistor Grade / Operating Range: Military; Mil-Processed, Extended Temperature
  • Polarity: Complementary
  • Transistor Type: BJT
  • Package Type: Die Form 0.021" Thick
0.5 to 6GHz E-PHEMT Amplifier in a Wafer Scale Package -- VMMK-2303
from Broadcom Inc.

Avago Technologies has combined its industry leading E-pHEMT technology with a revolutionary chip scale package. This product is easy to use since it requires only positive DC voltages for bias and no matching coefficients are required for impedance matching to 50 Ω systems. [See More]

  • Transistor Grade / Operating Range: Commercial; Industrial; Military
  • Transistor Technology / Material: GaAs
  • Transistor Type: PHEMT; E-pHEMT
  • Package Type: Sub-miniature 0402
Gallium Nitride (GaN) Power FET -- SGF48N10M
from Solid State Devices, Inc.

FEATURES: 4th Generation Gallium Nitride Technology. Exceptionally Low RDSon. Low Qg Simplifies Gate Drive Circuit. Very Fast Switching for High-Freq. Applications. Low Thermal Resistance. Hermetically Sealed Package. Available in Hermetically Sealed, Chip-Scale Package (SMG.3-1) – Consult... [See More]

  • Transistor Grade / Operating Range: Military; Aerospace
  • Package Type: TO-254
  • Transistor Type: Power-MOSFET
1.0 to 10GHz E-PHEMT Amplifier in a Wafer Scale Package -- VMMK-2203
from Broadcom Inc.

Avago Technologies has combined its industry leadingE-pHEMT technology with a revolutionary chip scale package. This product is easy to use since it requires only positive DC voltages for bias and no matching coefficients are required for impedance matching to 50 Ω systems. [See More]

  • Transistor Grade / Operating Range: Commercial; Industrial; Military
  • Transistor Technology / Material: GaAs
  • Transistor Type: PHEMT; E-pHEMT
  • Package Type: Sub-miniature 0402