Military Transistors
Last Updated: January 31, 2025
Description
Military transistors are semiconductor devices used to control and amplify electrical signals. They are designed to meet the rigorous demands of military applications, providing reliable performance under extreme conditions. These transistors are integral components in various electronic systems, serving as switches and amplifiers to manage electrical currents effectively.
Working Principle
Military transistors operate by utilizing a small input current or voltage to control a larger output current or voltage. This is achieved through the transistor's three-layer structure, typically consisting of an emitter, base, and collector. In bipolar junction transistors (BJTs), the input current at the base controls the current flow between the collector and emitter. This ability to control large currents with smaller ones makes transistors essential for amplification and switching functions. Their robustness and reliability under harsh conditions make them particularly useful in military applications, where consistent performance is critical.
Applications
Military transistors are used in a wide range of applications, including communication systems, radar equipment, and electronic warfare systems. They are crucial in RF amplifiers for radios and other communication devices, ensuring clear and reliable signal transmission. Additionally, they are employed in avionics equipment, providing the necessary amplification and switching capabilities for various airborne systems.
Advantages over other Transistors
Military transistors offer several advantages over standard transistors, including enhanced durability and reliability in extreme environments. They are designed to withstand high temperatures, vibrations, and radiation, making them suitable for military and aerospace applications. Their ability to handle high power levels and provide high-speed switching capabilities further distinguishes them from other types of transistors.
Limitations
Despite their advantages, military transistors have limitations, such as higher production costs due to the stringent manufacturing standards required for military-grade components. They may also have limited availability compared to commercial transistors, as they are produced in smaller quantities for specialized applications.
Considerations
When selecting military transistors, several factors should be considered, including initial costs, operating expenses, and durability. Military transistors tend to have higher initial costs due to their specialized design and manufacturing processes. However, their durability and reliability can lead to lower maintenance and replacement costs over time. It is also important to consider the specific performance requirements of the application, such as power handling capabilities and switching speeds, to ensure the selected transistor meets the necessary specifications.
from Qorvo
Qorvo's TGF2965-SM is a 6W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 0.03 to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the... [See More]
- Transistor Grade / Operating Range: Military
- Package Type: QFN
- Transistor Technology / Material: GaN
from DigiKey
Bipolar (BJT) Transistor Array NPN, PNP 40V 600mA 600mW Through Hole TO-78-6 [See More]
- Transistor Grade / Operating Range: Military
- Package Type: TO-78-6 Metal Can
- Polarity: NPN; PNP
from Qorvo
Qorvo's TGF3015-SM is a 10W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 30 MHz to 3.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within... [See More]
- Transistor Grade / Operating Range: Military
- Package Type: QFN
- Transistor Technology / Material: 0.03 - 3.0 GHz, 10 Watt, 32 Volt GaN RF Input-Matched Transistor
from DigiKey
Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 30mA Through Hole TO-78-6 [See More]
- Transistor Grade / Operating Range: Military
- Package Type: TO-78-6 Metal Can
- Polarity: NPN
from Qorvo
Qorvo's TGF3021-SM is a 30 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 4 GHz and a 32V supply rail. The device is in an industry standard 3x4mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications,... [See More]
- Transistor Grade / Operating Range: Military
- Package Type: QFN
- Transistor Technology / Material: GaN
from DigiKey
Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 30mA 350mW Surface Mount 3-SMD [See More]
- Transistor Grade / Operating Range: Military
- Package Type: 6-SMD, No Lead
- Polarity: NPN
from Qorvo
Qorvo's QPD1003 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 ohm in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can... [See More]
- Transistor Grade / Operating Range: Military
- Transistor Technology / Material: GaN
- Transistor Type: IMFET
- Package Type: RF-565
from DigiKey
Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 30mA 350mW Through Hole TO-78-6 [See More]
- Transistor Grade / Operating Range: Military
- Package Type: TO-78-6 Metal Can
- Polarity: NPN
from Qorvo
The QPD1028L is a 750W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency. Input pre-match within the package results in ease of external board match and saves board space. The... [See More]
- Transistor Grade / Operating Range: Military
- Package Type: NI-780
- Transistor Technology / Material: 1.2 - 1.4 GHz, 750 Watt, 65 Volt GaN on SiC RF Transistor
from DigiKey
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6 [See More]
- Transistor Grade / Operating Range: Military
- Package Type: TO-78-6 Metal Can
- Polarity: PNP
from Qorvo
The QPD1028 is a 750W discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz providing typically 59dBm of saturated output power with 18dB of large-signal gain and 70% of drain efficiency. Input pre-match within the package results in ease of external board match and saves board space. The... [See More]
- Transistor Grade / Operating Range: Military
- Package Type: NI-780
- Transistor Technology / Material: 1.2 - 1.4 GHz, 750 Watt, 65 Volt, GaN on SiC RF Transistor
from DigiKey
Bipolar (BJT) Transistor Array 2 PNP (Dual) 60V 50mA 350mW Through Hole TO-78-6 [See More]
- Transistor Grade / Operating Range: Military
- Package Type: TO-78-6 Metal Can
- Polarity: PNP
from Qorvo
QPD2929L is a 100W (P3dB), wideband input pre-matched discrete GaN on SiC HEMT which operates from DC to 3.5 GHz and a 28V supply rail. The device is in an industry standard air cavity package and is ideally suited to military and civilian radar, land mobile and military radio communications,... [See More]
- Transistor Grade / Operating Range: Military
- Package Type: NI-360
- Transistor Technology / Material: 100 W, DC-3.5 GHz, GaN RF Transistor
from DigiKey
Bipolar (BJT) Transistor Array NPN, PNP Surface Mount 6-SMD [See More]
- Transistor Grade / Operating Range: Military
- Package Type: 6-SMD, No Lead
- Polarity: NPN; PNP
from Qorvo
The Qorvo QPD1026L is a 1300 W (P3dB) discrete GaN on SiC HEMT which operates from 420 to 450 MHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for amateur radio, public... [See More]
- Transistor Grade / Operating Range: Military
- Package Type: NI-1230 (Eared)
- Transistor Technology / Material: 1300 Watt, 65 Volt, 420 - 450 MHz GaN RF Input-Matched Transistor
from DigiKey
Bipolar (BJT) Transistor Array 2 NPN (Dual) 60V 30mA 350mW Surface Mount 6-SMD [See More]
- Transistor Grade / Operating Range: Military
- Package Type: 6-SMD, No Lead
- Polarity: NPN
from Qorvo
The Qorvo QPD1029L is a 1500 W (P3dB) discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and... [See More]
- Transistor Grade / Operating Range: Military
- Package Type: NI-1230 (Eared)
- Transistor Technology / Material: 1500 Watt, 65 Volt, 1.2 - 1.4 GHz, GaN RF Input-Matched Transistor
from DigiKey
Bipolar (BJT) Transistor Array 4 NPN (Quad) 50V 800mA 1W Surface Mount 20-CLCC [See More]
- Transistor Grade / Operating Range: Military
- Package Type: 20-CLCC
- Polarity: NPN
from Qorvo
QPD1014A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. [See More]
- Transistor Grade / Operating Range: Military
- Package Type: QFN
- Transistor Technology / Material: 15W, 30-1200 MHz, GaN RF Input-Matched Transistor
from DigiKey
JFET P-Channel 30V 500mW Surface Mount UB [See More]
- Transistor Grade / Operating Range: Military
- Package Type: 3-SMD, No Lead
- Polarity: P-Channel
from Qorvo
QPD1000A is a 15W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1215 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. [See More]
- Transistor Grade / Operating Range: Military
- Package Type: QFN
- Transistor Technology / Material: 15W, 30-1215 MHz, GaN RF Input-Matched Transistor
from DigiKey
JFET N-CH 40V TO18 [See More]
- Transistor Grade / Operating Range: Military
- Package Type: TO-206AA, TO-18-3 Metal Can
- Polarity: N-Channel
from Qorvo
The Qorvo QPD1025 is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96 to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and... [See More]
- Transistor Grade / Operating Range: Military
- Package Type: NI-1230 (Earless)
- Transistor Technology / Material: 1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor
from DigiKey
JFET N-Channel 30V 300mW Through Hole TO-72 [See More]
- Transistor Grade / Operating Range: Military
- Package Type: TO-206AF, TO-72-4 Metal Can
- Polarity: N-Channel
from Qorvo
The Qorvo QPD1025L is a 1800 W (P3dB) discrete GaN on SiC HEMT which operates from .96to 1.215 GHz. Input prematch within the package results in ease of external board match and saves board space. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics and... [See More]
- Transistor Grade / Operating Range: Military
- Package Type: NI-1230 (Eared)
- Transistor Technology / Material: 1800 Watt, 65 Volt, .96 - 1.215 GHz, GaN RF Input-Matched Transistor
from DigiKey
JFET P-Channel 30V 500mW Through Hole TO-18 [See More]
- Transistor Grade / Operating Range: Military
- Package Type: TO-206AA, TO-18-3 Metal Can
- Polarity: P-Channel
from Qorvo
The QPD0005 is a single-path discrete GaN on SiC HEMT in a plastic overmold DFN package which operates from 2.5 to 5.0 GHz. It is a single-stage, unmatched transistor capable of delivering PSAT of 8.7 W at +48 V operation. Lead free and RoHS compliant. [See More]
- Transistor Grade / Operating Range: Military
- Package Type: DFN
- Transistor Technology / Material: 2.5 - 5.0 GHz, 8 Watt, 48 Volt GaN RF Transistor
from DigiKey
Bipolar (BJT) Transistor PNP 60V 600mA 800mW Through Hole TO-39 [See More]
- Transistor Grade / Operating Range: Military
- Package Type: TO-3; TO-39; TO-205AD, TO-39-3 Metal Can
- Polarity: PNP
from Qorvo
QPD1004A is a 25W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. [See More]
- Transistor Grade / Operating Range: Military
- Package Type: QFN
- Transistor Technology / Material: 25W, 30-1200 MHz, GaN RF Input-Matched Transistor
from DigiKey
Bipolar (BJT) Transistor NPN 80V 500mA 800mW Through Hole TO-5 [See More]
- Transistor Grade / Operating Range: Military
- Package Type: TO-205AA, TO-5-3 Metal Can
- Polarity: NPN
from Qorvo
The QPD2560L is a 300W discrete GaN on SiC HEMT which operates from 1.0 to 1.5 GHz providing typically up to 55.4dBm of saturated output power with 15dB of large-signal gain and 65% of drain efficiency. [See More]
- Transistor Grade / Operating Range: Military
- Package Type: NI-650
- Transistor Technology / Material: 300W, 1-1.5 GHz, GaN on SiC RF Transistor
from DigiKey
Bipolar (BJT) Transistor PNP - Darlington 80V 8A 64W Through Hole [See More]
- Transistor Grade / Operating Range: Military
- Package Type: TO-213AA, TO-66-2
- Polarity: PNP
from Qorvo
Qorvo's TGF3020-SM is a 5W (P3dB), 50 ohm-input matched discrete GaN on SiC HEMT which operates from 4.0 to 6.0 GHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the... [See More]
- Transistor Grade / Operating Range: Military
- Package Type: QFN
- Transistor Technology / Material: GaN
from DigiKey
Bipolar (BJT) Transistor NPN - Darlington 150V 5A 1W Through Hole TO-33 [See More]
- Transistor Grade / Operating Range: Military
- Package Type: TO-3; TO-205AC, TO-33-4 Metal Can
- Polarity: NPN
from Qorvo
The QPD1006 is a 450 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 1.2 to 1.4 GHz and a 50V supply rail. The device is GaN IMFET fully matched to 50 ohm in an industry standard air cavity package and is ideally suited for military and civilian radar. The device can support... [See More]
- Transistor Grade / Operating Range: Military
- Transistor Technology / Material: 450 Watt, 50 Volt, 1.2 - 1.4 GHz GaN IMFET
- Transistor Type: IMFET
- Package Type: Ni50-CW
from DigiKey
Bipolar (BJT) Transistor NPN 40V 3A 1.75W Through Hole TO-8 [See More]
- Transistor Grade / Operating Range: Military
- Package Type: TO-8; TO-233AA, TO-8-3 Metal Can
- Polarity: NPN
from Qorvo
The Qorvo QPD1016 is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation. The device can support... [See More]
- Transistor Grade / Operating Range: Military
- Package Type: NI-780
- Transistor Technology / Material: GaN
from DigiKey
Bipolar (BJT) Transistor NPN 70V 15A 6W Through Hole TO-3 (TO-204AA) [See More]
- Transistor Grade / Operating Range: Military
- Package Type: TO-3; TO-204AA, TO-3
- Polarity: NPN
from Qorvo
The Qorvo QPD1016L is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply. The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation. The device can support... [See More]
- Transistor Grade / Operating Range: Military
- Package Type: NI-780
- Transistor Technology / Material: GaN
from DigiKey
Bipolar (BJT) Transistor NPN 350V 1A 800mW Surface Mount UA [See More]
- Transistor Grade / Operating Range: Military
- Package Type: 4-SMD, No Lead
- Polarity: NPN
from Qorvo
QPD1011A is a 7W (P3dB), 50-Ohm input-matched discrete GaN on SiC HEMT which operates from 30 MHz to 1200 MHz. The integrated input matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. [See More]
- Transistor Grade / Operating Range: Military
- Package Type: QFN
- Transistor Technology / Material: 7W, 30-1200 MHz, GaN RF Input-Matched Transistor
from DigiKey
Bipolar (BJT) Transistor NPN 140V 10A 6W Through Hole TO-3 [See More]
- Transistor Grade / Operating Range: Military
- Package Type: TO-3; TO-204AA, TO-3
- Polarity: NPN
from Qorvo
The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to... [See More]
- Transistor Grade / Operating Range: Military
- Package Type: QFN
- Transistor Technology / Material: GaN
from DigiKey
Bipolar (BJT) Transistor NPN 300V 5A 2.5W Through Hole TO-66 (TO-213AA) [See More]
- Transistor Grade / Operating Range: Military
- Package Type: TO-213AA, TO-66-2
- Polarity: NPN
from Qorvo
Qorvo's TGF2978-SM is a 20 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 3x3mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications,... [See More]
- Transistor Grade / Operating Range: Military
- Package Type: QFN
- Transistor Technology / Material: GaN
from DigiKey
Bipolar (BJT) Transistor NPN 300V 5A 1.2W Through Hole TO-5 [See More]
- Transistor Grade / Operating Range: Military
- Package Type: TO-205AA, TO-5-3 Metal Can
- Polarity: NPN
from Qorvo
Qorvo's TGF2979-SM is a 25 W (P3dB) wideband unmatched discrete GaN on SiC HEMT which operates from DC to 12 GHz and a 32V supply rail. The device is in an industry standard 4 x 3 mm QFN package and is ideally suited to military and civilian radar, land mobile and military radio communications,... [See More]
- Transistor Grade / Operating Range: Military
- Package Type: QFN
- Transistor Technology / Material: DC - 12 GHz, 25 Watt, 32 Volt GaN RF Transistor
from DigiKey
Bipolar (BJT) Transistor PNP - Darlington 60V 8A 64W Through Hole [See More]
- Transistor Grade / Operating Range: Military
- Package Type: TO-213AA, TO-66-2
- Polarity: PNP
from Qorvo
Qorvo's TGF2954 is a discrete 5.04 mm GaN on SiC HEMT which operates from DC-12 GHz. The TGF2954 typically provides 44.5 dBm of saturated output power with power gain of 19.5 dB at 3 GHz. The maximum power added efficiency is 71.5 % which makes the TGF2954 appropriate for high efficiency... [See More]
- Transistor Grade / Operating Range: Military
- Transistor Technology / Material: GaN on SiC
- Transistor Type: HEMT
- Package Type: Die
from DigiKey
Bipolar (BJT) Transistor NPN 80V 50A 300W Through Hole TO-3 [See More]
- Transistor Grade / Operating Range: Military
- Package Type: TO-3; TO-204AE
- Polarity: NPN
from Broadcom Inc.
Avago Technologies has combined its industry leading E-PHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that generates off of a single position DC power supply. [See More]
- Transistor Grade / Operating Range: Commercial; Industrial; Military
- Transistor Technology / Material: GaAs
- Transistor Type: PHEMT; E-pHEMT
- Package Type: Sub-miniature 0402
from Northrop Grumman Corporation
WPTB32A0912Ax 960-1215 MHz Bipolar RF Transistor. The WPTB32A0912Ax application-specific transistor uses the 3217 L-Band die which was developed for pulsed radar systems. Optimal internal matching delivers high performance for applications such as the MIDS and JTIDS communication systems. Low... [See More]
- Transistor Grade / Operating Range: Military
- Transistor Technology / Material: SiC
- Transistor Type: Bipolar RF
from Semicoa
SEMICOA offers the largest selection of small signal, small signal RF and power transistors for demanding military, space and high reliability industrial applications. All devices are hermetically sealed in metal cans or ceramic packages. All of SEMICOA's transistors are also available in die form... [See More]
- Transistor Grade / Operating Range: Military
- Polarity: NPN
- Transistor Type: BJT
- Package Type: TO-72 UB
from Wolfspeed
Wolfspeed ’s CGHV38375F is a packaged, 400 W HPA matched to 50 ohms at both input and output ports. The CGHV38375F operates from 2.75 – 3.75 GHz providing coverage over the entire S-band radar band. This high-power amplifier provides >10 dB of large signal gain and 40% power-added... [See More]
- Transistor Grade / Operating Range: Commercial; Industrial; Military
- Transistor Technology / Material: 2.75 - 3.75, 400W GaN on SiC HPA
from Solid State Devices, Inc.
Features: TrenchMOS technology. Lowest ON-resistance in the industry. Avalanche rated. Hermetically Sealed, Hot Case power SMD. Low Total Gate Charge. Fast Switching. TX, TXV, S-Level screening available 2/. Improved (RDS(ON) QG) figure of merit [See More]
- Transistor Grade / Operating Range: Military
- Polarity: P-Channel
- Transistor Type: MOSFET
- Package Type: FP5 in Flat Pack
from TT Semiconductor, Inc.
The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25 ohms for the PNP devices (30 ohms for... [See More]
- Transistor Grade / Operating Range: Military; Mil-Processed, Extended Temperature
- Polarity: Complementary
- Transistor Type: BJT
- Package Type: Die Form 0.021" Thick
from Broadcom Inc.
Avago Technologies has combined its industry leading E-pHEMT technology with a revolutionary chip scale package. This product is easy to use since it requires only positive DC voltages for bias and no matching coefficients are required for impedance matching to 50 Ω systems. [See More]
- Transistor Grade / Operating Range: Commercial; Industrial; Military
- Transistor Technology / Material: GaAs
- Transistor Type: PHEMT; E-pHEMT
- Package Type: Sub-miniature 0402
from Solid State Devices, Inc.
FEATURES: 4th Generation Gallium Nitride Technology. Exceptionally Low RDSon. Low Qg Simplifies Gate Drive Circuit. Very Fast Switching for High-Freq. Applications. Low Thermal Resistance. Hermetically Sealed Package. Available in Hermetically Sealed, Chip-Scale Package (SMG.3-1) – Consult... [See More]
- Transistor Grade / Operating Range: Military; Aerospace
- Package Type: SMD1
- Transistor Type: Power-MOSFET
from Broadcom Inc.
Avago Technologies has combined its industry leadingE-pHEMT technology with a revolutionary chip scale package. This product is easy to use since it requires only positive DC voltages for bias and no matching coefficients are required for impedance matching to 50 Ω systems. [See More]
- Transistor Grade / Operating Range: Commercial; Industrial; Military
- Transistor Technology / Material: GaAs
- Transistor Type: PHEMT; E-pHEMT
- Package Type: Sub-miniature 0402