MOSFET Transistors

Last Updated: November 6, 2024 Reviewed by: Jon Lowy, consulting engineer

Description

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is a type of transistor that has become the fundamental building block of modern electronic devices. First fabricated in 1960, MOSFETs are integral to very large-scale integrated (VLSI) circuits and are widely used in both digital and analog applications. The MOSFET consists of a channel between a source and a drain terminal, with a gate terminal separated from the channel by a thin insulating layer, typically silicon dioxide. The voltage applied to the gate controls the current flow between the source and drain, making MOSFETs essential for switching and amplifying electronic signals.

Working Principle

The operation of a MOSFET is based on the control of charge carriers in a semiconductor channel. When a voltage is applied to the gate terminal, it creates an electric field that modulates the conductivity of the channel. In an n-channel MOSFET, a positive gate voltage attracts electrons to form a conductive channel between the source and drain, allowing current to flow. Conversely, a negative gate voltage depletes the channel of electrons, inhibiting current flow. There are two main types of MOSFETs: enhancement-mode (E-MOSFETs), which require a positive gate voltage to turn on, and depletion-mode (D-MOSFETs), which are normally on and require a negative gate voltage to turn off.

Applications

MOSFETs are used in a wide range of applications due to their versatility and efficiency. They are the primary components in digital circuits, including microprocessors and memory devices, due to their ability to switch states rapidly and consume less power. In analog circuits, MOSFETs are used in amplifiers and oscillators. Power MOSFETs are employed in power supplies, DC-DC converters, and motor controllers, where they handle high currents and voltages efficiently. Additionally, MOSFETs are increasingly used in microwave applications due to their high-frequency performance.

Advantages over other Transistors

MOSFETs offer several advantages over bipolar junction transistors (BJTs). They are voltage-controlled devices, which means they require less input power to operate compared to the current-controlled BJTs. MOSFETs have higher input impedance, resulting in less loading on preceding stages of a circuit. They are also less sensitive to temperature variations, making them more stable in different operating conditions. Furthermore, MOSFETs consume less power and can be integrated into high-density circuits more easily than BJTs. These characteristics make MOSFETs particularly suitable for use in integrated circuits and low-power applications.

Limitations

Despite their numerous advantages, MOSFETs have some limitations. They are more sensitive to static electricity, which can damage the gate oxide layer and affect their performance. This sensitivity necessitates careful handling and the use of protective measures during manufacturing and assembly. Additionally, while MOSFETs are excellent for low-voltage applications, their performance can degrade at very high voltages, where other types of transistors, such as insulated-gate bipolar transistors (IGBTs), may be more suitable.

Considerations

When designing circuits with MOSFETs, several factors must be considered to ensure optimal performance. The threshold voltage, which determines the gate voltage required to turn the MOSFET on, is a critical parameter. Designers must also account for the maximum drain-source voltage and current ratings to prevent device failure. Thermal management is another important consideration, as excessive heat can affect the reliability and lifespan of MOSFETs. Proper circuit design and layout, including the use of heat sinks and adequate ventilation, are essential to mitigate thermal issues.

316 Results
Cables, Wires - Management - Heat Shrink Tubing [DMN30H4D0L-13 from DIODES Incorporated]
from Win Source Electronics

Manufacturer: AMIS. Category: Cables, Wires - Management - Heat Shrink Tubing. Part Status: Obsolete. Drain to Source Voltage (Vdss): 50 V. Current - Continuous Drain (Id) @ 25 °C: 25A (Tc). Drive Voltage (Max Rds On, Min Rds On): 4V, 5V. Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V. Vgs(th) (Max)... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT3
FET, MOSFET Arrays -- 2N7002BKS,115 [2N7002BKS,115 from Nexperia B.V.]
from ODG (Origin Data Global)

MOSFET 2N-CH 60V 0.3A 6TSSOP [See More]

  • Transistor Type: MOSFET; MOSFET (Metal Oxide)
  • Transistor Technology / Material: MOSFET (Metal Oxide)
  • Polarity: N-Channel; 2 N-Channel (Dual)
  • Package Type: 6-TSSOP, SC-88, SOT-363
100 V N-channel Trench MOSFET -- PMT280ENEAX
from Nexperia B.V.

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Logic level compatible. Very fast switching. Trench MOSFET technology. ElectroStatic Discharge (ESD)... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT223; SOT223
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Automotive
1ED3120MU12HXUMA1 [1ED3120MU12HXUMA1 from Infineon Technologies AG]
from Rochester Electronics

Buffer or Inverter Based IGBT/MOSFET Driver [See More]

  • Transistor Type: MOSFET; IGBT
  • Package Type: SO-8; PG-DSO-8
CSD13381F4 12V, N-Channel FemtoFET?MOSFET -- CSD13381F4
from Texas Instruments

12V, N-Channel FemtoFET?MOSFET 3-PICOSTAR -55 to 150 [See More]

  • Transistor Type: MOSFET
  • Package Type: LGA 1.0 x 0.6mm
  • Polarity: N-Channel
MOSFETs -- 1008062 [NTF3055L108T1G from onsemi]
from RS Components, Ltd.

MOSFET N-Channel 60V 3A SOT223 [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT223; SOT-223
  • Polarity: N-Channel
500V-950V N-Channel Power MOSFET -- IPA50R190CE
from Infineon Technologies AG

500V CoolMOS ™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of... [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Transistor Technology / Material: Si/SiC
  • Polarity: N-Channel; N
  • Package Type: TO-220; PG-TO220-3
Power MOSFET Transistor -- 10-F0063TA190FS02-M774D39 [10-F0063TA190FS02-M774D39 from Vincotech GmbH]
from Richardson RFPD

Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies. [See More]

  • Transistor Type: MOSFET; Power-MOSFET
Ceramic Capacitors - C4532X7R1H685K -- 1158498-C4532X7R1H685K [C4532X7R1H685K from NXP Semiconductors]
from Win Source Electronics

Manufacturer: Freescale Semiconductor - NXP. Win Source Part Number: 1158498-C4532X7R1H685K. Manufacturer Homepage: www.freescale.com. Popularity: Medium. Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited. Application Field: Used in Industrial, Consumer Electronics, Portable... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT3
FET, MOSFET Arrays -- 2N7002BKV,115 [2N7002BKV,115 from Nexperia B.V.]
from ODG (Origin Data Global)

MOSFET 2N-CH 60V 340MA SOT666 [See More]

  • Transistor Type: MOSFET; MOSFET (Metal Oxide)
  • Transistor Technology / Material: MOSFET (Metal Oxide)
  • Polarity: N-Channel; 2 N-Channel (Dual)
  • Package Type: SOT-563, SOT-666
100 V, 16 mOhm logic level N-channel MOSFET in MLPAK33 -- BUK9Q16-100LJ
from Nexperia B.V.

Logic level N-channel MOSFET in a small MLPAK33 ‑WF package using Trench12 technology. This product has been designed and qualified to meet AEC-Q101 requirements delivering high performance and endurance. Features and benefits. Logic-level compatible. Trench12 MOSFET technology. Efficient... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT8002-3
1ED3131MU12HXUMA1 [1ED3131MU12HXUMA1 from Infineon Technologies AG]
from Rochester Electronics

Buffer or Inverter Based IGBT/MOSFET Driver [See More]

  • Transistor Type: MOSFET; IGBT
  • Package Type: SO-8; PG-DSO-8
CSD13383F4 CSD13383F4 12-V N-Channel FemtoFET? MOSFET -- CSD13383F4
from Texas Instruments

CSD13383F4 12-V N-Channel FemtoFET? MOSFET 3-PICOSTAR [See More]

  • Transistor Type: MOSFET
  • Package Type: LGA0.6x1.0
  • Polarity: N-Channel
MOSFETs -- 1008063 [NTD3055L104T4G from onsemi]
from RS Components, Ltd.

MOSFET N-Channel 60V 12A DPAK [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-252 (DPAK); DPAK (TO-252)
  • Polarity: N-Channel
500V-950V N-Channel Power MOSFET -- IPA60R060P7
from Infineon Technologies AG

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Transistor Technology / Material: Si/SiC
  • Polarity: N-Channel; N
  • Package Type: TO-220; PG-TO220-3
Power MOSFET Transistor -- APL1001JQ [APL1001JQ from Microchip Technology, Inc.]
from Richardson RFPD

Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies. [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Package Type: SOT-227
Connectors,Interconnects [DMP2110UFDBQ-7 from DIODES Incorporated]
from Win Source Electronics

Manufacturer: AMIS. Category: Connectors,Interconnects. Part Status: Obsolete. Technology: Wirewound. FET Type: N-Channel. Drain to Source Voltage (Vdss): 50 V. Current - Continuous Drain (Id) @ 25 °C: 25A (Tc). Drive Voltage (Max Rds On, Min Rds On): 4V, 5V. Rds On (Max) @ Id, Vgs: 45mOhm @... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT3
  • Polarity: N-Channel
FET, MOSFET Arrays -- 2N7002DW [2N7002DW from Yangzhou Yangjie Electronic Technology Co., Ltd.]
from ODG (Origin Data Global)

SOT-363 N 60V 0.34A Transistors [See More]

  • Transistor Type: MOSFET
  • Package Type: 6-TSSOP, SC-88, SOT-363
  • Polarity: N-Channel; 2 N-Channel (Dual)
100 V, N-channel Trench MOSFET -- BSS123,215
from Nexperia B.V.

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Trench MOSFET technology. Extremely fast switching. Logic level compatible. Subminiature surface mounting. [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT23; SOT23
1ED3830MU12MXUMA1 [1ED3830MU12MXUMA1 from Infineon Technologies AG]
from Rochester Electronics

Buffer/Inverter Based MOSFET Driver [See More]

  • Transistor Type: MOSFET
  • Package Type: PG-DSO-16
CSD17381F4 30V, N-Channel FemtoFET?MOSFET -- CSD17381F4
from Texas Instruments

30V, N-Channel FemtoFET?MOSFET 3-PICOSTAR -55 to 150 [See More]

  • Transistor Type: MOSFET
  • Package Type: LGA 1.0 x 0.6mm
  • Polarity: N-Channel
MOSFETs -- 1023533 [STD20NF06T4 from STMicroelectronics, Inc.]
from RS Components, Ltd.

STD20NF06T4,MOSFET N-Ch 60V 24A DPAK [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-252 (DPAK); DPAK (TO-252)
  • Polarity: N-Channel
500V-950V N-Channel Power MOSFET -- IPA60R099C7
from Infineon Technologies AG

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Transistor Technology / Material: Si/SiC
  • Polarity: N-Channel; N
  • Package Type: TO-220; PG-TO220-3
Power MOSFET Transistor -- APT10090SLLG [APT10090SLLG from Microchip Technology, Inc.]
from Richardson RFPD

Power MOS 7 ® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 ® by significantly lowering RDS(ON) and Qg. Power MOS 7 ® combines lower conduction and switching losses along... [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Package Type: D3PAK
Connectors,Interconnects [DMT40M9LPS-13 from DIODES Incorporated]
from Win Source Electronics

Manufacturer: AMIS. Category: Connectors,Interconnects. Packaging: Bulk. Part Status: Obsolete [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT3
FET, MOSFET Arrays -- 2N7002DW-7-F [2N7002DW-7-F from DIODES Incorporated]
from ODG (Origin Data Global)

MOSFET 2N-CH 60V 0.23A SOT-363 [See More]

  • Transistor Type: MOSFET; MOSFET (Metal Oxide)
  • Transistor Technology / Material: MOSFET (Metal Oxide)
  • Polarity: N-Channel; 2 N-Channel (Dual)
  • Package Type: 6-TSSOP, SC-88, SOT-363
100 V, N-channel Trench MOSFET -- BUK6D385-100EX
from Nexperia B.V.

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Extended temperature range Tj = 175 °C. Side wettable flanks for optical solder inspection. [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT1220
1EDF5673KXUMA1 [1EDF5673KXUMA1 from Infineon Technologies AG]
from Rochester Electronics

Buffer/Inverter Based MOSFET Driver [See More]

  • Transistor Type: MOSFET
  • Package Type: PG-TFLGA-13
CSD17483F4 30V, N-Channel FemtoFET?MOSFET -- CSD17483F4
from Texas Instruments

30V, N-Channel FemtoFET?MOSFET 3-PICOSTAR -55 to 150 [See More]

  • Transistor Type: MOSFET
  • Package Type: LGA 1.0 x 0.6mm
  • Polarity: N-Channel
MOSFETs -- 1031566 [STB80NF10T4 from STMicroelectronics, Inc.]
from RS Components, Ltd.

MOSFET N-Ch 100V 80A UltraFET II D2PAK [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-263; D2PAK (TO-263)
  • Polarity: N-Channel
500V-950V N-Channel Power MOSFET -- IPA60R280CFD7
from Infineon Technologies AG

Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Transistor Technology / Material: Si/SiC
  • Polarity: N-Channel; N
  • Package Type: TO-220; PG-TO220-3
Power MOSFET Transistor -- APT20M20B2LLG [APT20M20B2LLG from Microchip Technology, Inc.]
from Richardson RFPD

Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies. [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Package Type: T-Max™
Connectors,Interconnects [DMT47M2SFVW-7 from DIODES Incorporated]
from Win Source Electronics

Manufacturer: AMIS. Category: Connectors,Interconnects. Part Status: Obsolete. Technology: Wirewound. Drain to Source Voltage (Vdss): 50 V. Drive Voltage (Max Rds On, Min Rds On): 4V, 5V. Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V. Vgs(th) (Max) @ Id: 3V @ 77 µA. Gate Charge (Qg) (Max) @ Vgs: 37... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT3
FET, MOSFET Arrays -- 2N7002DW-G [2N7002DW-G from onsemi]
from ODG (Origin Data Global)

MOSFET 2N-CH 60V 0.115A SC88-6 [See More]

  • Transistor Type: MOSFET; MOSFET (Metal Oxide)
  • Transistor Technology / Material: MOSFET (Metal Oxide)
  • Polarity: N-Channel; 2 N-Channel (Dual)
  • Package Type: 6-TSSOP, SC-88, SOT-363
100 V, N-channel Trench MOSFET -- PMN280ENEAX
from Nexperia B.V.

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Logic-level compatible. Extended temperature range Tj = 175 °C. Trench MOSFET technology. ElectroStatic... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT457
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Automotive
1EDI3030ASXUMA1 [1EDI3030ASXUMA1 from Infineon Technologies AG]
from Rochester Electronics

Buffer/Inverter Based MOSFET Driver [See More]

  • Transistor Type: MOSFET
  • Package Type: PG-DSO-2
CSD17551Q3A 30V N-Channel MOSFET -- CSD17551Q3A
from Texas Instruments

30V N-Channel MOSFET 8-VSONP -55 to 150 [See More]

  • Transistor Type: MOSFET
  • Package Type: SON3x3
  • Polarity: N-Channel
MOSFETs -- 1031567 [STB80NF55L-06T4 from STMicroelectronics, Inc.]
from RS Components, Ltd.

MOSFET N-Ch 55V 80A UltraFET II D2PAK [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-263; D2PAK (TO-263)
  • Polarity: N-Channel
500V-950V N-Channel Power MOSFET -- IPA65R125C7
from Infineon Technologies AG

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Transistor Technology / Material: Si/SiC
  • Polarity: N-Channel; N
  • Package Type: TO-220; PG-TO220-3
Power MOSFET Transistor -- APT36N90BC3G [APT36N90BC3G from Microchip Technology, Inc.]
from Richardson RFPD

Super Junction MOSFET [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Package Type: TO-247; TO-247
Connectors,Interconnects [DMP2021UTSQ-13 from DIODES Incorporated]
from Win Source Electronics

Manufacturer: AMIS. Category: Connectors,Interconnects. Part Status: Obsolete. FET Type: N-Channel. Technology: Schottky. Drain to Source Voltage (Vdss): 50 V. Current - Continuous Drain (Id) @ 25 °C: 25A (Tc). Drive Voltage (Max Rds On, Min Rds On): 4V, 5V. Rds On (Max) @ Id, Vgs: 45mOhm @... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT3
  • Polarity: N-Channel
FET, MOSFET Arrays -- 2N7002DW-TP [2N7002DW-TP from Micro Commercial Components Corp.]
from ODG (Origin Data Global)

MOSFET 2N-CH 60V 0.115A SOT-363 [See More]

  • Transistor Type: MOSFET; MOSFET (Metal Oxide)
  • Transistor Technology / Material: MOSFET (Metal Oxide)
  • Polarity: N-Channel; 2 N-Channel (Dual)
  • Package Type: 6-TSSOP, SC-88, SOT-363
100 V, N-channel Trench MOSFET -- PXN014-100QEJ
from Nexperia B.V.

NextPower 100 V, enhanced logic level gate drive MOSFET in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package. Features and benefits. Logic-level compatible. Low Qrr for higher efficiency and lower spiking. Low QG × RDSon FOM for high efficiency switching applications. Strong... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT8002-1
1EDI3051ASXUMA1 [1EDI3051ASXUMA1 from Infineon Technologies AG]
from Rochester Electronics

Half Bridge Based IGBT/MOSFET Driver [See More]

  • Transistor Type: MOSFET; IGBT
  • Package Type: PG-DSO-36
CSD17552Q3A 30V N-Channel MOSFET -- CSD17552Q3A
from Texas Instruments

30V N-Channel MOSFET 8-VSONP -55 to 150 [See More]

  • Transistor Type: MOSFET
  • Package Type: SON3x3
  • Polarity: N-Channel
MOSFETs -- 1031573 [STW13NK100Z from STMicroelectronics, Inc.]
from RS Components, Ltd.

MOSFET N-Channel 1KV 13A SuperMESH TO247 [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-247; TO-247
  • Polarity: N-Channel
500V-950V N-Channel Power MOSFET -- IPA70R360P7S
from Infineon Technologies AG

Infineon ’s answer for flyback topologies. Developed to serve today ’s and especially tomorrow ’s trends in flyback topologies – the new 700V CoolMOS ™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters... [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Transistor Technology / Material: Si/SiC
  • Polarity: N-Channel; N
  • Package Type: TO-220; PG-TO220-3
Power MOSFET Transistor -- APT94N65B2C3G [APT94N65B2C3G from Microchip Technology, Inc.]
from Richardson RFPD

Super Junction MOSFET [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Package Type: T-Max™
Connectors,Interconnects [DMTH15H017LPSWQ-13 from DIODES Incorporated]
from Win Source Electronics

Manufacturer: AMIS. Category: Connectors,Interconnects. Drain to Source Voltage (Vdss): 50 V. Current - Continuous Drain (Id) @ 25 °C: 25A (Tc). Drive Voltage (Max Rds On, Min Rds On): 4V, 5V. Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V. Vgs(th) (Max) @ Id: 3V @ 77 µA. Gate Charge (Qg) (Max)... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT3
FET, MOSFET Arrays -- 2N7002DWH6327XTSA1 [2N7002DWH6327XTSA1 from Infineon Technologies AG]
from ODG (Origin Data Global)

MOSFET 2N-CH 60V 0.3A SOT363 [See More]

  • Transistor Type: MOSFET; MOSFET (Metal Oxide)
  • Transistor Technology / Material: MOSFET (Metal Oxide)
  • Polarity: N-Channel; 2 N-Channel (Dual)
  • Package Type: 6-VSSOP, SC-88, SOT-363
100 V, P-channel Trench MOSFET -- PXP1500-100QSJ
from Nexperia B.V.

P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Trench MOSFET technology. MLPAK33 package (3.3 x 3.3 mm footprint). Low thermal resistance. Low 0.8 mm profile. [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT8002-2
1EDN7512GXTMA1 [1EDN7512GXTMA1 from Infineon Technologies AG]
from Rochester Electronics

Buffer/Inverter Based MOSFET Driver, PDSO6 [See More]

  • Transistor Type: MOSFET
  • Package Type: PG-WSON-6
CSD17577Q3A CSD17577Q3A -- CSD17577Q3A
from Texas Instruments

CSD17577Q3A 8-VSONP -40 to 85 [See More]

  • Transistor Type: MOSFET
  • Package Type: SON3x3
MOSFETs -- 1031574 [STF5NK100Z from STMicroelectronics, Inc.]
from RS Components, Ltd.

MOSFET N-Ch 1KV 3.5A SuperMESH TO220FP [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-220; TO-220FP
  • Polarity: N-Channel
500V-950V N-Channel Power MOSFET -- IPA95R1K2P7
from Infineon Technologies AG

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS ™ P7 technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS ™ C3, the 950 V CoolMOS ™ P7 series delivers... [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Transistor Technology / Material: Si/SiC
  • Polarity: N-Channel; N
  • Package Type: TO-220; PG-TO220-3
Power MOSFET Transistor -- APTML100U60R020T1AG [APTML100U60R020T1AG from Microchip Technology, Inc.]
from Richardson RFPD

Linear MOSFET Power Module (Single Switch). Application: Electronic load dedicated to power supplies and battery discharge testing. Features: Linear MOSFET, Very low stray inductance, Internal thermistor for temperature monitoring, High level of integration, AIN substrate for improved thermal... [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Package Type: SP1
Connectors,Interconnects [DMT10H010LK3-13 from DIODES Incorporated]
from Win Source Electronics

Manufacturer: AMIS. Category: Connectors,Interconnects. Part Status: Obsolete. FET Type: N and P-Channel. Technology: Standard. Drain to Source Voltage (Vdss): 50 V. Current - Continuous Drain (Id) @ 25 °C: 25A (Tc). Drive Voltage (Max Rds On, Min Rds On): 4V, 5V. Rds On (Max) @ Id, Vgs: 45mOhm... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT3
  • Polarity: P-Channel
FET, MOSFET Arrays -- 2N7002HSX [2N7002HSX from Nexperia B.V.]
from ODG (Origin Data Global)

2N7002HS/SOT363/SC-88 [See More]

  • Transistor Type: MOSFET
  • Package Type: 6-TSSOP, SC-88, SOT-363
  • Polarity: N-Channel; 2 N-Channel (Dual)
110 V, N-channel Trench MOSFET -- PMPB50XNX
from Nexperia B.V.

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Low threshold voltage. Very fast switching. Trench MOSFET technology. Applications. Relay... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT1220-2
  • Polarity: N-Channel
1HP04CH-TL-W [1HP04CH-TL-W from onsemi]
from Rochester Electronics

Small Signal Field-Effect Transistor, P-Channel, MOSFET [See More]

  • Transistor Type: MOSFET; MOSFET RF
  • Package Type: TO-236
  • Polarity: P-Channel
CSD17577Q5A CSD17577Q5A -- CSD17577Q5A
from Texas Instruments

CSD17577Q5A 8-VSONP -40 to 85 [See More]

  • Transistor Type: MOSFET
  • Package Type: SON5x6
MOSFETs -- 1031575 [STP6NK90ZFP from STMicroelectronics, Inc.]
from RS Components, Ltd.

MOSFET N-Ch 900V 5.8A SuperMESH TO220FP [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-220; TO-220FP
  • Polarity: N-Channel
500V-950V N-Channel Power MOSFET -- IPAN60R125PFD7S
from Infineon Technologies AG

600V CoolMOS ™ PFD7 superjunction MOSFET in TO-220 FullPAK narrow-lead package. The 600V CoolMOS ™ PFD7 superjunction MOSFET (IPAN60R125PFD7S) complements the CoolMOS ™ 7 offering for consumer applications. The IPAN60R125PFD7S in a TO-220 FullPAK narrow-lead package features... [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Transistor Technology / Material: Si/SiC
  • Polarity: N-Channel; N
  • Package Type: TO-220; PG-TO220-3
Power MOSFET Transistor -- SK260MB10 [SK260MB10 from Semikron, Inc.]
from Richardson RFPD

MOSFET Module. Features. Compact Design. One screw mounting. Heat transfer and isolation through direct copper bonded aluminum oxide ceramic (DCB). Trench Technology. Short internal connections and low inductance case. Typical Applications. Low switched mode power supplies. DC servo drives. UPS [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Package Type: Semitop 3
Connectors,Interconnects [DMT43M8LFV-7 from DIODES Incorporated]
from Win Source Electronics

Manufacturer: AMIS. Category: Connectors,Interconnects. Part Status: Obsolete. Technology: Wirewound. Drain to Source Voltage (Vdss): 60V, 50V. Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V. Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V. Vgs(th) (Max) @ Id: 3V @ 77 µA. Gate Charge (Qg) (Max) @... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT3
FET, MOSFET Arrays -- 2N7002KDW_R1_00001 [2N7002KDW_R1_00001 from PANJIT SemiConductor]
from ODG (Origin Data Global)

60V N-CHANNEL ENHANCEMENT MODE M [See More]

  • Transistor Type: MOSFET; MOSFET (Metal Oxide)
  • Transistor Technology / Material: MOSFET (Metal Oxide)
  • Polarity: N-Channel; 2 N-Channel (Dual)
  • Package Type: 6-TSSOP, SC-88, SOT-363
12 V, N-channel Trench MOSFET -- PMCA14UNX
from Nexperia B.V.

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DSN1010-3 (SOT8007) Surface-Mounted Device (SMD) package using Trench MOSFET technology. Features and benefits. Low threshold voltage. Very fast switching. Ultra small package: 0.96 × 0.96 × 0.24 mm. Trench... [See More]

  • Transistor Type: MOSFET
  • Package Type: DSN1010‑3 (SOT8007)
  • Polarity: N-Channel
2ED21084S06JXUMA1 [2ED21084S06JXUMA1 from Infineon Technologies AG]
from Rochester Electronics

Half Bridge Based IGBT/MOSFET Driver [See More]

  • Transistor Type: MOSFET; IGBT
  • Package Type: PG-DSO-14
CSD18534Q5A 60V N-Channel NexFET Power? MOSFET -- CSD18534Q5A
from Texas Instruments

60V N-Channel NexFET Power? MOSFET 8-VSONP -55 to 150 [See More]

  • Transistor Type: MOSFET
  • Package Type: SON5x6
  • Polarity: N-Channel
MOSFETs -- 1031579 [STB75NF75LT4 from STMicroelectronics, Inc.]
from RS Components, Ltd.

MOSFET N-Channel 75V 75A D2PAK [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-263; D2PAK (TO-263)
  • Polarity: N-Channel
500V-950V N-Channel Power MOSFET -- IPAN70R360P7S
from Infineon Technologies AG

Infineon's answer for flyback topologies. Developed to serve today ’s and especially tomorrow ’s trends in flyback topologies – the 700V CoolMOS ™ P7 superjunction MOSFET series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by... [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Transistor Technology / Material: Si/SiC
  • Polarity: N-Channel; N
  • Package Type: TO-220; PG-TO220-3
Power MOSFET Transistor -- SKM111AR [SKM111AR from Semikron, Inc.]
from Richardson RFPD

Power MOSFET Module| •N Channel, enhancement mode| •Avalanche characteristic| •Short connections and built-in gate resistors to suppress internal oscillations even in critical applications| •Isolated copper baseplate| •All electrical connections on top for easy... [See More]

  • Transistor Type: MOSFET; Power-MOSFET
Connectors,Interconnects [DMTH4004SCTBQ-13 from DIODES Incorporated]
from Win Source Electronics

Manufacturer: AMIS. Category: Connectors,Interconnects. Part Status: Obsolete. Drain to Source Voltage (Vdss): 60V, 50V. Current - Continuous Drain (Id) @ 25 °C: 25A (Tc). Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V. Vgs(th) (Max) @ Id: 3V @ 77 µA. Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V. [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT3
FET, MOSFET Arrays -- 2N7002PS115 [2N7002PS115 from Nexperia B.V.]
from ODG (Origin Data Global)

NOW NEXPERIA 2N7002PS - SMALL SI [See More]

  • Transistor Type: MOSFET; MOSFET (Metal Oxide)
  • Package Type: 6-TSSOP, SC-88, SOT-363
  • Transistor Technology / Material: MOSFET (Metal Oxide)
12 V, N-channel Trench MOSFET -- PMCM6501VNEF
from Nexperia B.V.

N-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits. Low threshold voltage. Ultra small package: 0.98 × 1.48 × 0.35 mm. Trench MOSFET technology. ElectroStatic Discharge (ESD)... [See More]

  • Transistor Type: MOSFET
  • Package Type: OL-PMCM6501VNE
  • Polarity: N-Channel
2ED21094S06JXUMA1 [2ED21094S06JXUMA1 from Infineon Technologies AG]
from Rochester Electronics

Half Bridge Based IGBT/MOSFET Driver [See More]

  • Transistor Type: MOSFET; IGBT
  • Package Type: PG-DSO-14
CSD23381F4 12V , P-Channel FemtoFET?MOSFET -- CSD23381F4
from Texas Instruments

12V , P-Channel FemtoFET?MOSFET 3-PICOSTAR -55 to 150 [See More]

  • Transistor Type: MOSFET
  • Package Type: LGA0.6x1.0
  • Polarity: P-Channel
MOSFETs -- 1031986 [STW11NM80 from STMicroelectronics, Inc.]
from RS Components, Ltd.

MOSFET N-Channel 800V 11A TO247 [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-247; TO-247
  • Polarity: N-Channel
500V-950V N-Channel Power MOSFET -- IPB60R040C7
from Infineon Technologies AG

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Transistor Technology / Material: Si/SiC
  • Polarity: N-Channel; N
  • Package Type: TO-263; PG-TO263-3
Power MOSFET Transistor -- SKM121AR [SKM121AR from Semikron, Inc.]
from Richardson RFPD

Power MOSFET Module| •N Channel, enhancement mode| •Avalanche characteristics| •Short internal connections avoid oscillations| •Isolated copper baseplates| •All electrical connections on top for easy busbaring| •Large clearance (10mm) and creepage distances... [See More]

  • Transistor Type: MOSFET; Power-MOSFET
Connectors,Interconnects [DMTH10H025SK3-13 from DIODES Incorporated]
from Win Source Electronics

Manufacturer: AMIS. Category: Connectors,Interconnects. Part Status: Obsolete. FET Type: N and P-Channel. Technology: Schottky. Drain to Source Voltage (Vdss): 50 V. Current - Continuous Drain (Id) @ 25 °C: 25A (Tc). Drive Voltage (Max Rds On, Min Rds On): 4V, 5V. Rds On (Max) @ Id, Vgs: 45mOhm... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT3
  • Polarity: P-Channel
FET, MOSFET Arrays -- 2N7002V [2N7002V from onsemi]
from ODG (Origin Data Global)

MOSFET 2N-CH 60V 280MA SOT563F [See More]

  • Transistor Type: MOSFET; MOSFET (Metal Oxide)
  • Transistor Technology / Material: MOSFET (Metal Oxide)
  • Polarity: N-Channel; 2 N-Channel (Dual)
  • Package Type: SOT-563, SOT-666
12 V, N-channel Trench MOSFET -- PMXB40UNEX
from Nexperia B.V.

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Trench MOSFET technology. Leadless ultra small and thin SMD plastic package: 1.1 × 1.0... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT1215
  • Polarity: N-Channel
2ED21834S06JXUMA1 [2ED21834S06JXUMA1 from Infineon Technologies AG]
from Rochester Electronics

Half Bridge Based IGBT/MOSFET Driver [See More]

  • Transistor Type: MOSFET; IGBT
  • Package Type: PG-DSO-14
CSD25481F4 20V , P-Channel FemtoFET?MOSFET -- CSD25481F4
from Texas Instruments

20V , P-Channel FemtoFET?MOSFET 3-PICOSTAR -55 to 150 [See More]

  • Transistor Type: MOSFET
  • Package Type: LGA0.6x1.0
  • Polarity: P-Channel
MOSFETs -- 1031988 [STD7NM60N from STMicroelectronics, Inc.]
from RS Components, Ltd.

MOSFET N-Channel 600V 5A DPAK [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-252 (DPAK); DPAK (TO-252)
  • Polarity: N-Channel
500V-950V N-Channel Power MOSFET -- IPB60R040CFD7
from Infineon Technologies AG

Infineon ’s 600V CoolMOS ™ CFD7 Superjunction MOSFET IPB60R040CFD7 in D2PAK package is ideally suited for resonant topologies in high power SMPS, such as server, telecom and EV charging stations, where it enables significant efficiency improvements. As successor to the CFD2 SJ MOSFET... [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Transistor Technology / Material: Si/SiC
  • Polarity: N-Channel; N
  • Package Type: TO-263; PG-TO263-3
Silicon Carbide MOSFET Modules -- 10-FY09S2A065ME-L869L08 [10-FY09S2A065ME-L869L08 from Vincotech GmbH]
from Richardson RFPD

Features. Symmetric Boost for 1500Vdc applications. Full SiC for ultra high speed frequencies. Target Applications. Solar Inverters [See More]

  • Transistor Type: MOSFET
  • Package Type: flow 1
Connectors,Interconnects [TK099V65Z,LQ from Toshiba America Electronic Components, Inc.]
from Win Source Electronics

Mfr: TE Connectivity Aerospace, Defense and Marine. Category: Connectors,Interconnects. Packaging: Bulk. Part Status: Obsolete. FET Type: N and P-Channel. Technology: Wirewound. Drain to Source Voltage (Vdss): 60V, 50V. Current - Continuous Drain (Id) @ 25 °C: 25A (Tc). Drive Voltage (Max Rds... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT3
  • Polarity: P-Channel
12 V, N-channel Trench MOSFET -- PMZ170VNEYL
from Nexperia B.V.

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Very low threshold voltage. Very fast switching. Trench MOSFET technology. ElectroStatic Discharge... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT883
  • Polarity: N-Channel
2ED2732S01GXTMA1 [2ED2732S01GXTMA1 from Infineon Technologies AG]
from Rochester Electronics

Half Bridge Based MOSFET Driver [See More]

  • Transistor Type: MOSFET
  • Package Type: PG-VSON-1
CSD25483F4 20V , P-Channel FemtoFET?MOSFET -- CSD25483F4
from Texas Instruments

20V , P-Channel FemtoFET?MOSFET 3-PICOSTAR -55 to 150 [See More]

  • Transistor Type: MOSFET
  • Package Type: LGA0.6x1.0
  • Polarity: P-Channel
MOSFETs -- 1031992 [STW28NM50N from STMicroelectronics, Inc.]
from RS Components, Ltd.

MOSFET N-Channel 500V 21A TO247 [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-247; TO-247
  • Polarity: N-Channel
500V-950V N-Channel Power MOSFET -- IPB60R045P7
from Infineon Technologies AG

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Transistor Technology / Material: Si/SiC
  • Polarity: N-Channel; N
  • Package Type: TO-263; PG-TO263-3
Silicon Carbide MOSFET Modules -- 10-FY12B2A040MR02-L387L63 [10-FY12B2A040MR02-L387L63 from Vincotech GmbH]
from Richardson RFPD

Features. High frequency SiC MOSFET. Compact and low inductive design. Target Applications. Solar [See More]

  • Transistor Type: MOSFET
  • Package Type: flow 1
Connectors,Interconnects [PMPB14XNX from Nexperia B.V.]
from Win Source Electronics

Mfr: Freescale Semiconductor. Category: Connectors,Interconnects. Packaging: Bulk. Part Status: Obsolete. FET Type: P-Channel. Technology: Schottky. Drain to Source Voltage (Vdss): 50 V. Current - Continuous Drain (Id) @ 25 °C: 25A (Tc). Drive Voltage (Max Rds On, Min Rds On): 4V, 5V. Rds On... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT3
  • Polarity: P-Channel
12 V, N-channel Trench MOSFET -- PMZB170VNEYL
from Nexperia B.V.

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Very low threshold voltage. Very fast switching. Trench MOSFET technology. ElectroStatic... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT883B
  • Polarity: N-Channel
2EDF7275FXUMA1 [2EDF7275FXUMA1 from Infineon Technologies AG]
from Rochester Electronics

Half Bridge Based MOSFET Driver, PDSO16 [See More]

  • Transistor Type: MOSFET
  • Package Type: PG-DSO-16
LM395 Ultra Reliable Power Transistor -- LM395T
from Texas Instruments

Ultra Reliable Power Transistor 3-TO-220 0 to 125 [See More]

  • Transistor Type: MOSFET
MOSFETs -- 1031994 [STB42N65M5 from STMicroelectronics, Inc.]
from RS Components, Ltd.

MOSFET N-Channel 650V 33A D2PAK [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-263; D2PAK (TO-263)
  • Polarity: N-Channel
500V-950V N-Channel Power MOSFET -- IPB60R060P7
from Infineon Technologies AG

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Transistor Technology / Material: Si/SiC
  • Polarity: N-Channel; N
  • Package Type: TO-263; PG-TO263-3
Silicon Carbide MOSFET Modules -- 10-PC094PB035ME02-L629F36Y-/3/ [10-PC094PB035ME02-L629F36Y-/3/ from Vincotech GmbH]
from Richardson RFPD

Features. 900 V, SiC MOS. Switching frequency up to 400 kHz. Suitable for hard switching/soft switching. Increased power density. NTC. Target Applications. Power Supply. Special Application. Welding [See More]

  • Transistor Type: MOSFET
  • Package Type: flow0 17mm
Connectors,Interconnects [DMTH8008LFGQ-7 from DIODES Incorporated]
from Win Source Electronics

Manufacturer: AMIS. Category: Connectors,Interconnects. Part Status: Obsolete. Drain to Source Voltage (Vdss): 50 V. Drive Voltage (Max Rds On, Min Rds On): 4V, 5V. Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V. Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V. Input Capacitance (Ciss) (Max) @ Vds: 3384 pF @... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT3
12 V, P-channel Trench MOSFET -- PMCM4401VPEYL
from Nexperia B.V.

P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits. Low threshold voltage. Ultra small package: 0.78 × 0.78 × 0.35 mm. Trench MOSFET technology. ElectroStatic Discharge (ESD)... [See More]

  • Transistor Type: MOSFET
  • Package Type: OL-PMCM4401VPE
  • Polarity: P-Channel
2EDL8013GXUMA1 [2EDL8013GXUMA1 from Infineon Technologies AG]
from Rochester Electronics

2EDL8013 - Gate Driver N-Channel MOSFET 2 Driver Half-Bridge [See More]

  • Transistor Type: MOSFET
  • Package Type: PG-VDSON-8
  • Polarity: N-Channel
LP395 Ultra Reliable Power Transistor -- LP395Z/LFT1
from Texas Instruments

Ultra Reliable Power Transistor 3-TO-92 [See More]

  • Transistor Type: MOSFET
MOSFETs -- 1031995 [STW12NK90Z from STMicroelectronics, Inc.]
from RS Components, Ltd.

MOSFET N-Channel 900V 11A TO247 [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-247; TO-247
  • Polarity: N-Channel
500V-950V N-Channel Power MOSFET -- IPB60R160P6
from Infineon Technologies AG

Infineons CoolMOS ™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS ™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of... [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Transistor Technology / Material: Si/SiC
  • Polarity: N-Channel; N
  • Package Type: TO-263; PG-TO263-3
Silicon Carbide MOSFET Modules -- 10-PC094PB065ME01-L637F06Y [10-PC094PB065ME01-L637F06Y from Vincotech GmbH]
from Richardson RFPD

Faster, cooler and even more efficient, this new power module is the first-choice H-bridge for switching frequencies up to 400 kHz. Featuring a 900 V SiC MOSFET, it tops 1200 V SiC MOSFETs' switching performance and has a higher safety margin than 650 V MOSFETs. On top of that, the fastPACK 0 SiC... [See More]

  • Transistor Type: MOSFET
  • Package Type: flow0 12mm
Connectors,Interconnects [DMTH8008SPSQ-13 from DIODES Incorporated]
from Win Source Electronics

Manufacturer: AMIS. Category: Connectors,Interconnects. Packaging: Bulk. Part Status: Obsolete. Drive Voltage (Max Rds On, Min Rds On): 4V, 5V. Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V. Vgs(th) (Max) @ Id: 3V @ 77 µA. Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V. Input Capacitance (Ciss) (Max) @... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT3
FET, MOSFET Arrays -- 6706A [6706A from Goford Semiconductor Co., Ltd.]
from ODG (Origin Data Global)

MOSFET 30V 6.5A/5A 8SOP [See More]

  • Transistor Type: MOSFET; MOSFET (Metal Oxide)
  • Package Type: 8-SOIC (0.154", 3.90mm Width)
  • Transistor Technology / Material: MOSFET (Metal Oxide)
12 V, P-channel Trench MOSFET -- PMCM6501VPEF
from Nexperia B.V.

P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. Features and benefits. Low threshold voltage. Ultra small package: 0.98 × 1.48 × 0.35 mm. Trench MOSFET technology. ElectroStatic Discharge (ESD)... [See More]

  • Transistor Type: MOSFET
  • Package Type: OL-PMCM6501VPE
  • Polarity: P-Channel
2EDN7434RXTMA1 [2EDN7434RXTMA1 from Infineon Technologies AG]
from Rochester Electronics

Buffer/Inverter Based MOSFET Driver, 4A, PDSO8 [See More]

  • Transistor Type: MOSFET
  • Package Type: PG-TSSOP-8
TPS1100 Single P-channel Enhancement-Mode MOSFET -- TPS1100D
from Texas Instruments

Single P-channel Enhancement-Mode MOSFET 8-SOIC [See More]

  • Transistor Type: MOSFET
  • Polarity: P-Channel
MOSFETs -- 1031996 [STW20NM60FD from STMicroelectronics, Inc.]
from RS Components, Ltd.

MOSFET N-Channel 600V 20A TO247 [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-247; TO-247
  • Polarity: N-Channel
500V-950V N-Channel Power MOSFET -- IPB65R041CFD7
from Infineon Technologies AG

The 650V CoolMOS ™ CFD7 superjunction MOSFET with integrated fast body diode is the perfect choice for resonant high power topologies. Infineon ’s 650V CoolMOS ™ CFD7 superjunction MOSFET IPB65R041CFD7 in a D2PAK package is ideally suited for resonant topologies in industrial... [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Transistor Technology / Material: Si/SiC
  • Polarity: N-Channel; N
  • Package Type: TO-263; PG-TO263-3
Silicon Carbide MOSFET Modules -- 10-PC124PA040MR-L638F18Y [10-PC124PA040MR-L638F18Y from Vincotech GmbH]
from Richardson RFPD

Features. H-bridge or 2x half-bridge. SiC MOS. fsw up to 250kHz. Thermistor. Target Applications. Power Supply [See More]

  • Transistor Type: MOSFET
  • Package Type: flow0 12mm
Connectors,Interconnects [DMT4001LPS-13 from DIODES Incorporated]
from Win Source Electronics

Manufacturer: AMIS. Category: Connectors,Interconnects. Packaging: Bulk. Part Status: Obsolete. Drain to Source Voltage (Vdss): 50 V. Current - Continuous Drain (Id) @ 25 °C: 25A (Tc). Drive Voltage (Max Rds On, Min Rds On): 4V, 5V. Rds On (Max) @ Id, Vgs: 45mOhm @ 12A, 10V. Vgs(th) (Max) @ Id:... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT3
FET, MOSFET Arrays -- ALD1116SAL
from ODG (Origin Data Global)

MOSFET 2N-CH 10.6V 8SOIC [See More]

  • Transistor Type: MOSFET; MOSFET (Metal Oxide)
  • Transistor Technology / Material: MOSFET (Metal Oxide)
  • Polarity: N-Channel; 2 N-Channel (Dual) Matched Pair
  • Package Type: 8-SOIC (0.154", 3.90mm Width)
12 V, P-channel Trench MOSFET -- PMPB06R7VPX
from Nexperia B.V.

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-4) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Low threshold voltage. Trench MOSFET technology. Small and leadless ultra thin SMD plastic... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT1220-4
  • Polarity: P-Channel
2EDN8523GXTMA1 [2EDN8523GXTMA1 from Infineon Technologies AG]
from Rochester Electronics

Gate Driver N-Channel MOSFET 2 Driver [See More]

  • Transistor Type: MOSFET
  • Package Type: PG-WSON-8
  • Polarity: N-Channel
TPS1101 Single P-channel Enhancement-Mode MOSFET -- TPS1101D
from Texas Instruments

Single P-channel Enhancement-Mode MOSFET 8-SOIC [See More]

  • Transistor Type: MOSFET
  • Polarity: P-Channel
MOSFETs -- 1031997 [STW9N150 from STMicroelectronics, Inc.]
from RS Components, Ltd.

MOSFET N-Channel 1.5KV 8A TO247 [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-247; TO-247
  • Polarity: N-Channel
500V-950V N-Channel Power MOSFET -- IPB65R045C7
from Infineon Technologies AG

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Transistor Technology / Material: Si/SiC
  • Polarity: N-Channel; N
  • Package Type: TO-263; PG-TO263-3
Silicon Carbide MOSFET Modules -- 10-PY096PA035ME-L224F18Y [10-PY096PA035ME-L224F18Y from Vincotech GmbH]
from Richardson RFPD

The new flowPACK 1 SiC is faster than 1200 V SiC MOSFETs, safer than 650 V MOSFETs and perfect for charging stations that require soft-switching for LLC topology. This 3xhalf-bridge achieves the efficiency you need at nominal and at partial loads. And its increased switching frequency and power... [See More]

  • Transistor Type: MOSFET
  • Package Type: flow 1
Connectors,Interconnects [DMN2310UW-7 from DIODES Incorporated]
from Win Source Electronics

Manufacturer: AMIS. Category: Connectors,Interconnects. Part Status: Obsolete. FET Type: N-Channel. Technology: Schottky. Drain to Source Voltage (Vdss): 50 V. Current - Continuous Drain (Id) @ 25 °C: 25A (Tc). Drive Voltage (Max Rds On, Min Rds On): 4V, 5V. Rds On (Max) @ Id, Vgs: 45mOhm @... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT3
  • Polarity: N-Channel
FET, MOSFET Arrays -- AO4611 [AO4611 from Alpha & Omega Semiconductor, Ltd.]
from ODG (Origin Data Global)

MOSFET N/P-CH 60V 8SOIC [See More]

  • Transistor Type: MOSFET; MOSFET (Metal Oxide)
  • Transistor Technology / Material: MOSFET (Metal Oxide)
  • Polarity: P-Channel; N and P-Channel
  • Package Type: 8-SOIC (0.154", 3.90mm Width)
1200 V, 17 mOhm, N-channel SiC MOSFET -- NSF017120T2A0J
from Nexperia B.V.

The NSF017120T2A0 is a Silicon Carbide based 1200V power MOSFET in a 7-pin X.PAK plastic package for surface mounted, topside-cooled technology. Its excellent RDSon temperature stability, combined with fast switching speed, makes it a product of choice in high power and high voltage industrial... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT8107-2
2N5639 [2N5639 from onsemi]
from Rochester Electronics

Small Signal Field-Effect Transistor, N-Channel, MOSFET, TO-92 [See More]

  • Transistor Type: MOSFET; MOSFET RF
  • Package Type: TO-92; TO-92
  • Polarity: N-Channel
TPS1120 Dual P-channel Enhancemenent-Mode MOSFET -- TPS1120D
from Texas Instruments

Dual P-channel Enhancemenent-Mode MOSFET 8-SOIC [See More]

  • Transistor Type: MOSFET
  • Polarity: P-Channel
MOSFETs -- 1032000 [STF26NM60N from STMicroelectronics, Inc.]
from RS Components, Ltd.

MOSFET N-Channel 600V 20A TO220FP [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-220; TO-220FP
  • Polarity: N-Channel
500V-950V N-Channel Power MOSFET -- IPD50R280CE
from Infineon Technologies AG

500V CoolMOS ™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of... [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Transistor Technology / Material: Si/SiC
  • Polarity: N-Channel; N
  • Package Type: TO-252 (DPAK); PG-TO252-3
Silicon Carbide MOSFET Modules -- 10-PY126PA020ME-L227F18Y [10-PY126PA020ME-L227F18Y from Vincotech GmbH]
from Richardson RFPD

Features. Wolfspeed(Cree) ™ Silicon Carbide Power MOSFET, C2M ™ MOSFET Technology. Sixpack with three separated legs. Solderless Press-fit Mounting Technology. Target Applications. Battery Charger [See More]

  • Transistor Type: MOSFET
  • Package Type: flow1 12mm
MOSFET -- 2N4351
from New Jersey Semi-Conductor Products, Inc.

Trans MOSFET N-CH 25V 0.1A 4-Pin TO-72 [See More]

  • Transistor Type: MOSFET
  • Polarity: N-Channel
| MOSFET 60V 70A 142W -- SUB70N06-14 [SUB70N06-14 from Vishay Precision Group]
from Karl Kruse GmbH & Co. KG

Karl Kruse  is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop... [See More]

  • Transistor Type: MOSFET
-20V, P ch NexFET MOSFET™, single SON 2x2, 23.9mOhm 6-WSON -55 to 150 -- 815-CSD25310Q2 [CSD25310Q2 from Texas Instruments]
from Utmel Electronic Limited

-20V, P ch NexFET MOSFET ™, single SON 2x2, 23.9mOhm 6-WSON -55 to 150 [See More]

  • Transistor Type: MOSFET
  • Transistor Technology / Material: SILICON
SD210
from Universal Semiconductor, Inc.

Self-Aligning Silicon Gate Sturcture. Low Transfer Capacitance - 0.2 pF typ. Low Input Capacitance - 2.4 pF typ. Low Output Capacitance - 1.3 pF typ. Low Gate Threadhold Voltage - 0.6V typ. [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Package Type: TO-72, Gold-Backed Chips in Waffle Pack
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial; Industrial
2nd Generation Z-FET® 280-mΩ, 1200-V, SiC MOSFET -- C2M0280120D
from Wolfspeed

Features. High-speed switching with low capacitances. High blocking voltage with low RDS(on). Resistant to latch-up. Easy to parallel and simple to drive. Avalanche ruggedness [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-247-3
  • Transistor Technology / Material: 2nd Generation Z-FET® 280-mΩ, 1200-V, SiC MOSFET
TMC32NP
from TRINAMIC Motion Control GmbH & Co. KG.

The TMC32NP-MLP is a miniature N & P channel MOSFET complementary pair, ideally suited for motor drive applications. It perfectly complements the TMC239A-LA / TMC249A-LA stepper motor drivers, in order to build a 2A (4 devices) / 4A (8 devices) stepper motor driver the size of a stamp. The... [See More]

  • Transistor Type: MOSFET
Enhancement Mode -- IXFN130N90SK
from Littelfuse, Inc.

Industrial grade, single switch SiC mosfet built in a 4 connectors, UL certified SOT227B package providing 3000V isolation (1s). Featuring a kelvin connection pin, and exhibiting good power cycling characteristics, and a very fast and low losses switching behaviour, this mosfets is recommend for use... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT-227B (minibloc)
Transistors -- IRF530PBF
from PUI - Projections Unlimited, Inc.

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to... [See More]

  • Transistor Type: MOSFET
-12V Pch+Pch Small Signal MOSFET -- US6J12
from ROHM Semiconductor GmbH

US6J12 is low on-resistance MOSFET, suitable for switching application. [See More]

  • Transistor Type: MOSFET
  • Package Type: TUMT6
  • Polarity: P-Channel
  • Transistor Grade / Operating Range: Commercial
2-CHANNEL SUPERCAPACITOR AUTO BALANCING PCB -- SABMB2
from Advanced Linear Devices, Inc.

The SABMB2 is a 2-channel Printed Circuit Board (PCB) designedto be used with any member of the ALD9100XX family of SAB ™MOSFETs for system designers and application developers. SABMOSFETs are exclusive EPAD® MOSFETs that address leakageand voltage balance of supercapacitor cells connected in... [See More]

  • Transistor Type: MOSFET
MOSFETs -- 2N4351
from Linear Systems

The 2N4351 Single, N-Channel Enhancement Mode MOSFET is a direct replacement for Intersil and Siliconix-Vishay equivalent part. It is ideal for Amplifier and Switching Applications. Available in TO-72 4L ROHS and Tested Die. All Linear Systems devices are available with special testing to customer... [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-72
  • Polarity: N-Channel
-100V P-Channel Enhancement-Mode MOSFET -- TP2510
from Microchip Technology, Inc.

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT89
  • Polarity: P-Channel
Avalanche Rated P-channel MOSFET Transistor -- SFF110P20FP5
from Solid State Devices, Inc.

Features: TrenchMOS technology. Lowest ON-resistance in the industry. Avalanche rated. Hermetically Sealed, Hot Case power SMD. Low Total Gate Charge. Fast Switching. TX, TXV, S-Level screening available 2/. Improved (RDS(ON) QG) figure of merit [See More]

  • Transistor Type: MOSFET
  • Package Type: FP5 in Flat Pack
  • Polarity: P-Channel
  • Transistor Grade / Operating Range: Military
MOSFETs
from Toshiba America, Inc.

Toshiba offers an extensive portfolio of low-VDSS and mid/high-VDSS MOSFETs in various circuit configurations and packages, featuring high speed, high performance, low loss, low on-resistance, small packaging, etc. Toshiba has decades of experience in the development and manufacturing of MOSFETs. [See More]

  • Transistor Type: MOSFET; MOSFET RF
  • Transistor Grade / Operating Range: Industrial; Automotive
-12V Pch+Pch Small Signal MOSFET -- US6J12
from ROHM Semiconductor USA, LLC

US6J12 is low on-resistance MOSFET, suitable for switching application. [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT-363
  • Polarity: P-Channel
  • Transistor Grade / Operating Range: Commercial
0.22A, 2.7-5.5V Single Hot-Swap IC Hi-Side MOSFET, Fault Report, Act-High Enable 8-SOIC -40 to 85 -- 815-TPS2030DRG4 [TPS2030DRG4 from Texas Instruments]
from Utmel Electronic Limited

0.22A, 2.7-5.5V Single Hot-Swap IC Hi-Side MOSFET, Fault Report, Act-High Enable 8-SOIC -40 to 85 [See More]

  • Transistor Type: MOSFET
2nd Generation Z-FET™ 1700V, 1000 mΩ, Silicon-Carbide MOSFET -- C2M1000170J
from Wolfspeed

Features. High blocking voltage with low RDS(on). Easy to parallel and simple to drive. Low parasitic inductance. Surface mount package with separate driver pin [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-263-7
  • Transistor Technology / Material: 2nd Generation Z-FET™ 1700V, 1000 mΩ, Silicon-Carbide MOSFET
TMC34NP-PSO
from TRINAMIC Motion Control GmbH & Co. KG.

The TMC34NP-PSO is a miniature N & P channel MOSFET complementary pair, ideally suited for motor drive applications. It perfectly complements the TMC239A-LA / TMC249A-LA stepper motor drivers, in order to build a 4A stepper motor driver the size of a stamp. The evaluation board has different... [See More]

  • Transistor Type: MOSFET
Enhancement Mode -- IXSA40N120L2-7TR
from Littelfuse, Inc.

Industrial grade, single switch SiC MOSFETs exhibiting good power cycling characteristics and very fast, low-losses switching behavior. These MOSFETs are recommended for use in high-speed industrial switch mode power supplies. 1200 V with low RDS(on) = 30 m Ω SiC MOSFET technology with... [See More]

  • Transistor Type: MOSFET
Transistors -- IRF840PBF
from PUI - Projections Unlimited, Inc.

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to... [See More]

  • Transistor Type: MOSFET
-20V Pch+Pch Small Signal MOSFET -- QS6J1
from ROHM Semiconductor GmbH

-20V Pch+Pch Small Signal MOSFET [See More]

  • Transistor Type: MOSFET
  • Package Type: TSMT6
  • Polarity: P-Channel
  • Transistor Grade / Operating Range: Commercial
4-CHANNEL SUPERCAPACITOR AUTO BALANCING PCB -- SABMB16
from Advanced Linear Devices, Inc.

The SABMB16 is a 4-channel universal Printed Circuit Board(PCB) designed to be used with the entire ALD8100XX andALD9100XX family of SAB ™ MOSFETs for system designers andapplication developers. SAB MOSFETs are exclusive EPAD®MOSFETs that address leakage and voltage balance ofsupercapacitor... [See More]

  • Transistor Type: MOSFET
Triode/MOS Tube/Transistor >> MOSFETs -- .8205A
from LCSC Electronics Technology (HK) Limited

20V 6A 22m Ω@4.5V,4.5A 2W 1.5V@250uA 2PCSNChannel(Common Drain) SOT-23-6 MOSFETs ROHS [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT23
MOSFETs -- 3N190
from Linear Systems

The 3N190 Series Monolithic-Duel, P-Channel Enhancement Mode MOSFET is a direct replacement for Intersil and Siliconix-Vishay equivalent part. It is ideal for Amplifier and Switching Applications. Available in TO-78 7L RoHS and Tested Die. All Linear Systems devices are available with special... [See More]

  • Transistor Type: MOSFET
  • Polarity: P-Channel
-100V P-Channel Enhancement-Mode MOSFET -- VP2110
from Microchip Technology, Inc.

VP2110 is an enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors, and the high input impedance and positive temperature... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT23
  • Polarity: P-Channel
0.9V Drive Nch MOSFET -- RE1J002YN
from ROHM Semiconductor USA, LLC

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT-416
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
0.2A, 600V, 25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA -- 17512-VN2460N8 [VN2460N8 from Microchip Technology, Inc.]
from Utmel Electronic Limited

0.2A, 600V, 25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA [See More]

  • Transistor Type: MOSFET
  • Polarity: N-Channel
2nd-Generation Z-FET® 1200-V, 160-mΩ, Silicon-Carbide MOSFET -- C2M0160120D
from Wolfspeed

Features. High-speed switching with low capacitances. High blocking voltage with low RDS(on). Resistant to latch-up. Easy to parallel and simple to drive. Halogen-free, RoHS-compliant [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-247-3
  • Transistor Technology / Material: 2nd-Generation Z-FET® 1200-V, 160-mΩ, Silicon-Carbide MOSFET
Enhancement Mode -- IXSH40N120L2KHV
from Littelfuse, Inc.

Industrial grade, single switch SiC MOSFETs exhibiting good power cycling characteristics and very fast, low-losses switching behavior. These MOSFETs are recommended for use in high-speed industrial switch mode power supplies. 1200 V with low RDS(on) = 80 m Ω SiC MOSFET technology with... [See More]

  • Transistor Type: MOSFET
Transistors -- IRFL110TRPBF
from PUI - Projections Unlimited, Inc.

Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-223 package is designed for surface-mounting using vapor phase, infrared, or wave soldering techniques. Its unique... [See More]

  • Transistor Type: MOSFET
0.9V Drive Nch MOSFET -- RE1J002YN
from ROHM Semiconductor GmbH

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

  • Transistor Type: MOSFET
  • Package Type: EMT3F
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
6-CHANNEL SUPERCAPACITOR AUTO BALANCING PCB -- SABMB6
from Advanced Linear Devices, Inc.

The SABMB6 is a 6-channel Printed Circuit Board (PCB) designedto be used with any member of the ALD9100XX family of SAB ™MOSFETs for system designers and application developers. SABMOSFETs are exclusive EPAD® MOSFETs that address leakageand voltage balance of supercapacitor cells connected in... [See More]

  • Transistor Type: MOSFET
Triode/MOS Tube/Transistor >> MOSFETs -- 03N06L [03N06L from Goford Semiconductor Co., Ltd.]
from LCSC Electronics Technology (HK) Limited

60V 3A 72m Ω 1.7W 1.2V@250uA null SOT-23-3L MOSFETs ROHS [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT23
MOSFETs -- LS3N164
from Linear Systems

The 3N163 Series Single, P-Channel Enhancement Mode MOSFET is a direct replacement for Intersil and Siliconix-Vishay equivalent part. It is ideal for Amplifier and switching Applications. Available in TO-72 4L ROHS, SOT-143 4L ROHS, and Tested Die. All Linear Systems devices are available with... [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-72
  • Polarity: P-Channel
-200V P-Channel Enhancement-Mode MOSFET -- TP0620
from Microchip Technology, Inc.

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-92
  • Polarity: P-Channel
0.9V Drive Nch MOSFET -- RU1J002YN
from ROHM Semiconductor USA, LLC

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT323; SOT-323
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
10V DRIVE NCH MOSFET (AEC-Q101 Q -- 687-RSJ400N06FRATL [RSJ400N06FRATL from ROHM Co., Ltd.]
from Utmel Electronic Limited

10V DRIVE NCH MOSFET (AEC-Q101 Q [See More]

  • Transistor Type: MOSFET
  • Transistor Technology / Material: SILICON
2nd-Generation Z-FET® 1200-V, 160-mΩ, Silicon-Carbide MOSFET Bare Die -- CPM2-1200-0160B
from Wolfspeed

Features. Uses Wolfspeed 2nd-generation advanced SiC MOSFET technology. High-speed switching with low capacitances. High blocking voltage with low RDS(on). Avalanche ruggedness. Easy to parallel and simple to drive [See More]

  • Transistor Type: MOSFET
  • Package Type: Bare Die
  • Transistor Technology / Material: 2nd-Generation Z-FET® 1200-V, 160-mΩ, Silicon-Carbide MOSFET Bare Die
Enhancement Mode -- IXSJ25N120R1
from Littelfuse, Inc.

The high-performance ceramic substrate based isolated package offers inherent isolation, higher thermal conductivity and reduces thermal resistance junction-to-heatsink while remaining industry standard footprint compatible. These SiC MOSFETs are engineered to reduce the on-state resistance, to... [See More]

  • Transistor Type: MOSFET
Transistors -- IRFP450APBF
from PUI - Projections Unlimited, Inc.

IRFP450A Series Power Metal-Oxide Semiconductor Field-Effect Transistors (MOSFET) [See More]

  • Transistor Type: MOSFET
0.9V Drive Nch MOSFET -- RU1J002YN
from ROHM Semiconductor GmbH

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

  • Transistor Type: MOSFET
  • Package Type: UMT3F
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
Complementary N-Channel and P-Channel MOSFET Array -- ALD1115PAL
from Advanced Linear Devices, Inc.

MOSFET Array N and P-Channel Complementary 10.6V - 500mW Through Hole 8-PDIP [See More]

  • Transistor Type: MOSFET
  • Package Type: PDIP8
  • Polarity: Complementary
MOSFETs -- LS3N165
from Linear Systems

The 3N165 Series Monolithic-Dual, P-Channel Enhancement Mode MOSFET is a direct replacement for Intersil and Siliconix-Vishay equivalent part. It is ideal for Amplifier and Switching Applications. Available in TO-99 8L ROHS, SOIC 8L ROHS, and Tested Die. All Linear Systems devices are available with... [See More]

  • Transistor Type: MOSFET
  • Polarity: P-Channel
-200V P-Channel Enhancement-Mode MOSFET -- TP2520
from Microchip Technology, Inc.

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT89
  • Polarity: P-Channel
0.9V Drive Nch MOSFET -- RYC002N05
from ROHM Semiconductor USA, LLC

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT23; SOT-23
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
2nd-Generation Z-FET® 1200-V, 25-mΩ, Silicon-Carbide MOSFET Bare Die -- CPM2-1200-0025B
from Wolfspeed

High-speed switching with low capacitances. High blocking voltage with low RDS(on). Avalanche ruggedness. Resistant to latch-up. Easy to parallel and simple to drive [See More]

  • Transistor Type: MOSFET
  • Package Type: Bare Die
  • Transistor Technology / Material: 2nd-Generation Z-FET® 1200-V, 25-mΩ, Silicon-Carbide MOSFET Bare Die
Enhancement Mode -- LSIC1MO120E0080
from Littelfuse, Inc.

Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0080 1200 V come in ratings of 1200 V, 80 mOhm in a TO-247-3L package. Optimized for high frequency, high-efficiency applications Extremely low gate charge and output capacitance Low gate resistance for high-frequency switching Normally-off... [See More]

  • Transistor Type: MOSFET
0.9V Drive Nch MOSFET -- RYC002N05
from ROHM Semiconductor GmbH

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT23; SOT-23
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
Complementary N-Channel and P-Channel MOSFET Array -- ALD1115SAL
from Advanced Linear Devices, Inc.

MOSFET Array N and P-Channel Complementary 10.6V - 500mW Surface Mount 8-SOIC [See More]

  • Transistor Type: MOSFET
  • Package Type: SOIC8
  • Polarity: Complementary
-20V P-Channel Enhancement-Mode MOSFET -- TP2502
from Microchip Technology, Inc.

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT89
  • Polarity: P-Channel
0.9V Drive Nch MOSFET -- RYE002N05
from ROHM Semiconductor USA, LLC

ROHM recommends RE1J002YN as standard spec. [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT-416
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
2nd-Generation Z-FET® 1200-V, 40-mΩ, Silicon-Carbide MOSFET -- C2M0040120D
from Wolfspeed

Features. High-speed switching with low capacitances. High blocking voltage with low RDS(on). Avalanche ruggedness. Resistant to latch-up. Easy to parallel and simple to drive [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-247-3
  • Transistor Technology / Material: 2nd-Generation Z-FET® 1200-V, 40-mΩ, Silicon-Carbide MOSFET
Discrete Semiconductor Products - Transistors - FETs, MOSFETs -- 2N6661-2 [2N6661-2 from Vishay Intertechnology, Inc.]
from Acme Chip Technology Co., Limited

MOSFET N-CH 90V 860MA TO39 [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-39; TO-205AD, TO-39-3 Metal Can
Enhancement Mode -- LSIC1MO120E0120
from Littelfuse, Inc.

Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0120 1200 V come in ratings of 1200 V, 120 mOhm in a TO-247-3L package. Optimized for high frequency, high-efficiency applications Extremely low gate charge and output capacitance Low gate resistance for high-frequency switching Normally-off... [See More]

  • Transistor Type: MOSFET
0.9V Drive Nch MOSFET -- RYM002N05
from ROHM Semiconductor GmbH

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

  • Transistor Type: MOSFET
  • Package Type: VMT3
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
Dual N-Channel and Dual P-Channel Matched MOSFET Pair -- ALD1103PBL
from Advanced Linear Devices, Inc.

MOSFET Array 2 N and 2 P-Channel Matched Pair 10.6V 40mA, 16mA 500mW Through Hole 14-PDIP [See More]

  • Transistor Type: MOSFET
  • Package Type: PDIP14
  • Polarity: Complementary
Triode/MOS Tube/Transistor >> MOSFETs -- 10N65F [10N65F from Goodwork Semiconductor Co., Ltd.]
from LCSC Electronics Technology (HK) Limited

650V 10A 810m Ω@10V,5A 125W 4V@250uA N Channel ITO-220AB-3 MOSFETs ROHS [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-220
  • Polarity: N-Channel
-220V P-Channel Enhancement-Mode MOSFET -- TP2522
from Microchip Technology, Inc.

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT89
  • Polarity: P-Channel
0.9V Drive Nch MOSFET -- RYM002N05
from ROHM Semiconductor USA, LLC

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT-723
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
30A, 40V, 0.0095ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, LFPAK56D-8 -- 568-BUK9K18-40E [BUK9K18-40E from NXP Semiconductors]
from Utmel Electronic Limited

30A, 40V, 0.0095ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, LFPAK56D-8 [See More]

  • Transistor Type: MOSFET
  • Polarity: N-Channel
2nd-Generation Z-FET® 1200-V, 40-mΩ, Silicon-Carbide MOSFET Bare Die -- CPM2-1200-0040B
from Wolfspeed

Features. High-speed switching with low capacitances. High blocking voltage with low RDS(on). Avalanche ruggedness. Resistant to latch-up. Easy to parallel and simple to drive [See More]

  • Transistor Type: MOSFET
  • Package Type: Bare Die
  • Transistor Technology / Material: 2nd-Generation Z-FET® 1200-V, 40-mΩ, Silicon-Carbide MOSFET Bare Die
Enhancement Mode -- LSIC1MO120E0160
from Littelfuse, Inc.

Littelfuse Silicon Carbide (SiC) MOSFET LSIC1MO120E0160 1200 V come in ratings of 1200 V, 160 mOhm in a TO-247-3L package. Optimized for high frequency, high-efficiency applications Extremely low gate charge and output capacitance Low gate resistance for high-frequency switching Normally-off... [See More]

  • Transistor Type: MOSFET
0.9V Drive Nch+Nch MOSFET -- EM6K34
from ROHM Semiconductor GmbH

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

  • Transistor Type: MOSFET
  • Package Type: EMT6
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
Dual N-Channel and Dual P-Channel Matched MOSFET Pair -- ALD1103SBL
from Advanced Linear Devices, Inc.

MOSFET Array 2 N and 2 P-Channel Matched Pair 10.6V 40mA, 16mA 500mW Surface Mount 14-SOIC [See More]

  • Transistor Type: MOSFET
  • Package Type: SOIC14
  • Polarity: Complementary
-220V P-Channel Enhancement-Mode MOSFET -- TP5322
from Microchip Technology, Inc.

TP5322 is a low threshold enhancement-mode (normally-off) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT23; SOT89
  • Polarity: P-Channel
0.9V Drive Nch+Nch MOSFET -- UM6K34N
from ROHM Semiconductor USA, LLC

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT-363
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
30V N CH MOSFET -- 815-CSD17585F5 [CSD17585F5 from Texas Instruments]
from Utmel Electronic Limited

30V N CH MOSFET [See More]

  • Transistor Type: MOSFET
  • Transistor Technology / Material: SILICON
2nd-Generation Z-FET® 1200-V, 80-mΩ, Silicon-Carbide MOSFET -- C2M0080120D
from Wolfspeed

Features. High-speed switching with low capacitances. High blocking voltage with low RDS(on). Avalanche ruggedness. Resistant to latch-up. Easy to parallel and simple to drive. Halogen-free, RoHS-compliant [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-247-3
  • Transistor Technology / Material: 2nd-Generation Z-FET® 1200-V, 80-mΩ, Silicon-Carbide MOSFET
Discrete Semiconductor Products - Transistors - FETs, MOSFETs -- 2N7000,126 [2N7000,126 from NXP Semiconductors]
from Acme Chip Technology Co., Limited

MOSFET N-CH 60V 300MA TO92-3 [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-92; TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Enhancement Mode -- LSIC1MO120G0025
from Littelfuse, Inc.

Littelfuse SiC MOSFETs are available in 14A, 18A, 25A, 50A and 70A nominal current rating. They are available in TO-247-4L package with a Kelvin source connection. Not only does the pin arrangement simplify the PCB routing, but the Kelvin source connection also reduces the stray inductance in the... [See More]

  • Transistor Type: MOSFET
  • Polarity: N-Channel
0.9V Drive Nch+Nch MOSFET -- UM6K34N
from ROHM Semiconductor GmbH

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

  • Transistor Type: MOSFET
  • Package Type: UMT6
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
Dual N-Channel and Dual P-Channel Matched MOSFET Pair -- ALD1105PBL
from Advanced Linear Devices, Inc.

MOSFET Array 2 N and 2 P-Channel Matched Pair 10.6V - 500mW Through Hole 14-PDIP [See More]

  • Transistor Type: MOSFET
  • Package Type: PDIP14
  • Polarity: Complementary
Triode/MOS Tube/Transistor >> MOSFETs -- 12N65F [12N65F from Goodwork Semiconductor Co., Ltd.]
from LCSC Electronics Technology (HK) Limited

650V 12A 650m Ω@10V,6A 55W 4V@250uA N Channel TO-220 MOSFETs ROHS [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-220
  • Polarity: N-Channel
-240V P-Channel Enhancement-Mode MOSFET -- TP2424
from Microchip Technology, Inc.

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT89
  • Polarity: P-Channel
1.2V Drive Nch MOSFET (Corresponds to AEC-Q101) -- RUQ050N02FRA
from ROHM Semiconductor USA, LLC

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT-457
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
30V NCH NCH MID POWER MOSFET -- 687-HP8K22TB [HP8K22TB from ROHM Co., Ltd.]
from Utmel Electronic Limited

30V NCH NCH MID POWER MOSFET [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Transistor Technology / Material: SILICON
2nd-Generation Z-FET® 1200-V, 80-mΩ, Silicon-Carbide MOSFET Bare Die -- CPM2-1200-0080B
from Wolfspeed

Features. High-speed switching with low capacitances. High blocking voltage with low RDS(on). Avalanche ruggedness. Resistant to latch-up. Easy to parallel and simple to drive [See More]

  • Transistor Type: MOSFET
  • Package Type: Bare Die
  • Transistor Technology / Material: 2nd-Generation Z-FET® 1200-V, 80-mΩ, Silicon-Carbide MOSFET Bare Die
Discrete Semiconductor Products - Transistors - FETs, MOSFETs -- 2N7000-AP [2N7000-AP from Micro Commercial Components Corp.]
from Acme Chip Technology Co., Limited

MOSFET N-CH 60V 200MA TO92 [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-92; TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Enhancement Mode -- LSIC1MO170E0750
from Littelfuse, Inc.

Littelfuse 1700V, 750mOhm Silicon Carbide (SiC) MOSFET bring SiC fast switching and energy saving performance to the 1700V voltage range, focusing on auxiliary power supplies. The MOSFET is available in 3 different discrete packages, with the recent addition of a TO-268-2L option with extra... [See More]

  • Transistor Type: MOSFET
1.2V Drive Nch Small Signal MOSFET -- RV1C002UN
from ROHM Semiconductor GmbH

The Ultra Small Package(0806size). [See More]

  • Transistor Type: MOSFET
  • Package Type: VML0806
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
Dual N-Channel and Dual P-Channel Matched MOSFET Pair -- ALD1105SBL
from Advanced Linear Devices, Inc.

MOSFET Array 2 N and 2 P-Channel Matched Pair 10.6V - 500mW Surface Mount 14-SOIC [See More]

  • Transistor Type: MOSFET
  • Package Type: SOIC14
  • Polarity: Complementary
-30V P-Channel Enhancement-Mode MOSFET -- VP3203
from Microchip Technology, Inc.

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-92; SOT89
  • Polarity: P-Channel
1.2V Drive Nch Small Signal MOSFET -- RV1C002UN
from ROHM Semiconductor USA, LLC

The Ultra Small Package(0806size). [See More]

  • Transistor Type: MOSFET
  • Package Type: DFN0806-3
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
30V NCH+NCH POWER MOSFET -- 687-HS8K1TB [HS8K1TB from ROHM Co., Ltd.]
from Utmel Electronic Limited

30V NCH+NCH POWER MOSFET [See More]

  • Transistor Type: MOSFET; Power-MOSFET
  • Transistor Technology / Material: SILICON
2nd-Generation Z-FET® 1700 V, 1 Ω, Silicon-Carbide MOSFET -- C2M1000170D
from Wolfspeed

C2M1000170D replaces silicon MOSFETs in auxiliary power supplies where reliable, efficient power conversion from high-voltage buses is required to operate system logic, displays, cooling fans, etc. Features. High-speed switching with low capacitances. High blocking voltage with low RDS(on). Easy to... [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-247-3
  • Transistor Technology / Material: 2nd-Generation Z-FET® 1700 V, 1 Ω, Silicon-Carbide MOSFET
1.2V Drive Nch Small Signal MOSFET -- RV2C002UN
from ROHM Semiconductor GmbH

The ultra-small package(1006size) RV2C002UN is suitable for portable devices. [See More]

  • Transistor Type: MOSFET
  • Package Type: VML1006
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
DUAL N-CHANNEL ENHANCEMENT MODE EPAD® MATCHED PAIR MOSFET ARRAY -- ALD111933PAL
from Advanced Linear Devices, Inc.

MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP [See More]

  • Transistor Type: MOSFET
  • Package Type: PDIP8
  • Polarity: N-Channel
Triode/MOS Tube/Transistor >> MOSFETs -- 15N10
from LCSC Electronics Technology (HK) Limited

100V 15A 85m Ω 2.5V N Channel TO-252 MOSFETs ROHS [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-252 (DPAK)
  • Polarity: N-Channel
-350V P-Channel Enhancement-Mode MOSFET -- TP2435
from Microchip Technology, Inc.

This low threshold enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive... [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT89
  • Polarity: P-Channel
1.2V Drive Nch+Nch MOSFET -- EM6K33
from ROHM Semiconductor USA, LLC

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT-563
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
40V N CH MOSFET -- 815-CSD18514Q5A [CSD18514Q5A from Texas Instruments]
from Utmel Electronic Limited

40V N CH MOSFET [See More]

  • Transistor Type: MOSFET
  • Transistor Technology / Material: SILICON
2nd-Generation Z-FET® 25-mΩ, 1200-V, SiC MOSFET -- C2M0025120D
from Wolfspeed

Features. High-speed switching with low capacitances. High blocking voltage with low RDS(on). Easy to parallel and simple to drive. Resistant to latch-up. Avalanche ruggedness [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-247-3
  • Transistor Technology / Material: 2nd-Generation Z-FET® 25-mΩ, 1200-V, SiC MOSFET
Enhancement Mode -- LSIC1MO170T0750
from Littelfuse, Inc.

Our new 1700V, 750mOhm Silicon Carbide (SiC) MOSFETs are presented in TO-263-7L package. The separated source pin reduces significantly the parasitic source inductance path to the driver, which helps improve the efficiency in high power applications. The maximum operating junction temperature is 175... [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-263; TO-263-7L
1.5V Drive Nch MOSFET -- RQ1C065UN
from ROHM Semiconductor GmbH

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

  • Transistor Type: MOSFET
  • Package Type: TSMT8
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
DUAL N-CHANNEL ENHANCEMENT MODE EPAD® MATCHED PAIR MOSFET ARRAY -- ALD111933SAL
from Advanced Linear Devices, Inc.

MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Surface Mount 8-SOIC [See More]

  • Transistor Type: MOSFET
  • Package Type: SOIC8
  • Polarity: N-Channel
Triode/MOS Tube/Transistor >> MOSFETs -- 15N10 [15N10 from Youtai Semiconductor Co., Ltd]
from LCSC Electronics Technology (HK) Limited

100V 15A 55W 80m Ω@10V,10A 3V@250uA N Channel TO-252-2 MOSFETs ROHS [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-252 (DPAK)
  • Polarity: N-Channel
-350V P-Channel Enhancement-Mode MOSFET -- TP2535
from Microchip Technology, Inc.

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-92
  • Polarity: P-Channel
1.2V Drive Nch+Nch MOSFET -- VT6K1
from ROHM Semiconductor USA, LLC

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

  • Transistor Type: MOSFET
  • Package Type: VMT6
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
E-Series Automotive Silicon Carbide MOSFET -- E3M0120090D
from Wolfspeed

Wolfspeed extends its leadership in Silicon Carbide by introducing the E-Series line of SiC MOSFETs. The Industry ’s first automotive qualified, PPAP capable and humidity resistant MOSFET available in the industry. It features Wolfspeed ’s 3rd generation rugged planar technology offering... [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-247-3
  • Transistor Technology / Material: E-Series Automotive Silicon Carbide MOSFET
Enhancement Mode -- MCB60I1200TZ
from Littelfuse, Inc.

Industrial grade, single switch SiC mosfets built in a TO268 high voltage package with extra clearance and creepage for harsh, dirty industrial environmental conditions. [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-268AA (D3Pak) (2HV)
  • Polarity: N-Channel
1.5V Drive Nch MOSFET -- RUF020N02
from ROHM Semiconductor GmbH

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

  • Transistor Type: MOSFET
  • Package Type: TUMT3
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
Dual N-Channel Matched MOSFET Pair -- ALD1101APAL
from Advanced Linear Devices, Inc.

MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP [See More]

  • Transistor Type: MOSFET
  • Package Type: PDIP8
  • Polarity: N-Channel
Triode/MOS Tube/Transistor >> MOSFETs -- 15N10L-TN3-R [15N10L-TN3-R from Unisonic Technologies Co., Ltd.]
from LCSC Electronics Technology (HK) Limited

100V 14.7A 37.4W 100m Ω@10V,8A 3V@250uA N Channel TO-252-2(DPAK) MOSFETs ROHS [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-252 (DPAK)
  • Polarity: N-Channel
-350V P-Channel Enhancement-Mode MOSFET -- TP2635
from Microchip Technology, Inc.

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-92
  • Polarity: P-Channel
1.5V Drive Nch MOSFET (Corresponds to AEC-Q101) -- RUR040N02FRA
from ROHM Semiconductor USA, LLC

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT-346
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
4V DRIVE NCH+NCH MOSFET -- 687-QS8K11TCR [QS8K11TCR from ROHM Co., Ltd.]
from Utmel Electronic Limited

4V DRIVE NCH+NCH MOSFET [See More]

  • Transistor Type: MOSFET
  • Transistor Technology / Material: SILICON
High Power RF LDMOS FET 10 W, 28 V, 900 – 2700 MHz -- PTFC270101M-V1
from Wolfspeed

The PTFC270101M is an unmatched 10-watt LDMOS FET suitable for power amplifier applications with frequencies from 900 MHz to 2700 MHz. This LDMOS transistor offers excellent gain, efficiency and linearity performance in a small over molded plastic package. Features. Unmatched input and output. [See More]

  • Transistor Type: MOSFET
  • Package Type: Surface Mount
  • Transistor Technology / Material: High Power RF LDMOS FET 10 W, 28 V, 900 – 2700 MHz
1.5V Drive Nch MOSFET -- RUR020N02
from ROHM Semiconductor GmbH

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobile equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

  • Transistor Type: MOSFET
  • Package Type: TSMT3
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
Dual N-Channel Matched MOSFET Pair -- ALD1101ASAL
from Advanced Linear Devices, Inc.

MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Surface Mount 8-SOIC [See More]

  • Transistor Type: MOSFET
  • Package Type: SOIC8
  • Polarity: N-Channel
Triode/MOS Tube/Transistor >> MOSFETs -- 1N60G [1N60G from Youtai Semiconductor Co., Ltd]
from LCSC Electronics Technology (HK) Limited

600V 1A 11 Ω@10V,500mA 4V@250uA N Channel SOT-223 MOSFETs ROHS [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT223
  • Polarity: N-Channel
-400V P-Channel Enhancement-Mode MOSFET -- TP2540
from Microchip Technology, Inc.

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-92; SOT89
  • Polarity: P-Channel
1.5V Drive Nch MOSFET -- RQ1C065UN
from ROHM Semiconductor USA, LLC

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

  • Transistor Type: MOSFET
  • Package Type: TSMT8
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
60V N CH MOSFET -- 815-CSD18543Q3A [CSD18543Q3A from Texas Instruments]
from Utmel Electronic Limited

60V N CH MOSFET [See More]

  • Transistor Type: MOSFET
  • Polarity: N-Channel; N-CHANNEL
High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz -- PTVA101K02EV-V1
from Wolfspeed

The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal... [See More]

  • Transistor Type: MOSFET
  • Package Type: Bolt Down
  • Transistor Technology / Material: High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz
1.5V Drive Nch+SBD MOSFET -- QS5U36
from ROHM Semiconductor GmbH

ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market. [See More]

  • Transistor Type: MOSFET
  • Package Type: TSMT5
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
Dual N-Channel Matched MOSFET Pair -- ALD1101BPAL
from Advanced Linear Devices, Inc.

MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP [See More]

  • Transistor Type: MOSFET
  • Package Type: PDIP8
  • Polarity: N-Channel
Triode/MOS Tube/Transistor >> MOSFETs -- 1N60G-AA3-R [1N60G-AA3-R from Unisonic Technologies Co., Ltd.]
from LCSC Electronics Technology (HK) Limited

600V 1A 8W 12 Ω@10V,500mA 4V@250uA N Channel SOT-223 MOSFETs ROHS [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT223
  • Polarity: N-Channel
-400V P-Channel Enhancement-Mode MOSFET -- TP2640
from Microchip Technology, Inc.

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-92
  • Polarity: P-Channel
1.5V Drive Nch MOSFET -- RUF020N02
from ROHM Semiconductor USA, LLC

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT323; SOT-323
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
AND Gate Based MOSFET Driver, 1.2A, CMOS, PDIP14, PLASTIC, DIP-14 -- 3962-MIC4468BN [MIC4468BN from Micrel, Inc.]
from Utmel Electronic Limited

AND Gate Based MOSFET Driver, 1.2A, CMOS, PDIP14, PLASTIC, DIP-14 [See More]

  • Transistor Type: MOSFET; CMOS
High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz -- PTVA030121EA-V1
from Wolfspeed

The PTVA030121EA is an LDMOS FET characterized for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features include high gain and a thermally-enhanced package. Manufactured with Wolfspeed's advanced LDMOS process, this device provides excellent thermal performance and... [See More]

  • Transistor Type: MOSFET
  • Package Type: Bolt Down
  • Transistor Technology / Material: High Power RF LDMOS FET 12 W, 50 V, 390 – 450 MHz
10V Drive Nch MOSFET (AEC-Q101 Qualified) -- RSJ400N06FRA
from ROHM Semiconductor GmbH

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

  • Transistor Type: MOSFET
  • Package Type: LPTS (D2PAK)
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
Dual N-Channel Matched MOSFET Pair -- ALD1101BSAL
from Advanced Linear Devices, Inc.

MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V 40mA 500mW Surface Mount 8-SOIC [See More]

  • Transistor Type: MOSFET
  • Package Type: SOIC8
  • Polarity: N-Channel
Triode/MOS Tube/Transistor >> MOSFETs -- 1N65G [1N65G from Youtai Semiconductor Co., Ltd]
from LCSC Electronics Technology (HK) Limited

650V 1A 11 Ω@10V,500mA 4V@250uA N Channel SOT-223-4 MOSFETs ROHS [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT223
  • Polarity: N-Channel
-40V P-Channel Enhancement-Mode MOSFET -- TP0604
from Microchip Technology, Inc.

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-92
  • Polarity: P-Channel
1.5V Drive Nch MOSFET -- RW1C015UN
from ROHM Semiconductor USA, LLC

MOSFETs are made as ultra-low ON-resistance by the micro-processing technologies suitable for mobilr equipment for low current consumption. In wide lineup including compact type, high-power type and complex type to meet in the market. [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT-563
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz -- PXAC201202FC-V2
from Wolfspeed

The PXAC201202FC is a 120-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1800 to 2200 MHz frequency band. Its asymmetric and dual-path design make it ideal for Doherty amplifier designs. It features input and output matching, and a thermally-enhanced package... [See More]

  • Transistor Type: MOSFET
  • Package Type: Earless
  • Transistor Technology / Material: High Power RF LDMOS FET 120 W, 28 V, 1800 – 2200 MHz
10V Drive Nch MOSFET -- RCX080N25
from ROHM Semiconductor GmbH

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-220; TO-220FM
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
Dual N-Channel Matched MOSFET Pair -- ALD1101PAL
from Advanced Linear Devices, Inc.

MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Through Hole 8-PDIP [See More]

  • Transistor Type: MOSFET
  • Package Type: PDIP8
  • Polarity: N-Channel
Triode/MOS Tube/Transistor >> MOSFETs -- 20N04
from LCSC Electronics Technology (HK) Limited

40V 20A 25m Ω 2.2V N Channel TO-252 MOSFETs ROHS [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-252 (DPAK)
  • Polarity: N-Channel
-40V P-Channel Enhancement-Mode MOSFET -- TP2104
from Microchip Technology, Inc.

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature... [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-92; SOT23
  • Polarity: P-Channel
1.5V Drive Nch+Nch MOSFET -- TT8K1
from ROHM Semiconductor USA, LLC

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

  • Transistor Type: MOSFET
  • Package Type: TSST8
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz -- PXAC201602FC-V1
from Wolfspeed

The PXAC201602FC is a 140-watt LDMOS FET for use in multistandard cellular power amplifier applications in the 1880 to 1920 MHz and 2010 to 2025 MHz frequency bands. It features input and output matching, and a thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced... [See More]

  • Transistor Type: MOSFET
  • Package Type: Earless
  • Transistor Technology / Material: High Power RF LDMOS FET 140 W, 28 V, 1880 – 1920 MHz, 2010 – 2025 MHz
Discrete Semiconductor Products - Transistors - FETs, MOSFETs -- 2N7002LT7H [2N7002LT7H from onsemi]
from Acme Chip Technology Co., Limited

MOSFET N-CH 60V 115MA SOT23-3 [See More]

  • Transistor Type: MOSFET
  • Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
10V Drive Nch+Nch MOSFET -- SP8K80
from ROHM Semiconductor GmbH

Complex type MOSFETs(N+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market. [See More]

  • Transistor Type: MOSFET
  • Package Type: SOP8
  • Polarity: N-Channel
  • Transistor Grade / Operating Range: Commercial
Dual N-Channel Matched MOSFET Pair -- ALD1101SAL
from Advanced Linear Devices, Inc.

MOSFET Array 2 N-Channel (Dual) Matched Pair 10.6V - 500mW Surface Mount 8-SOIC [See More]

  • Transistor Type: MOSFET
  • Package Type: SOIC8
  • Polarity: N-Channel
Triode/MOS Tube/Transistor >> MOSFETs -- 20N06
from LCSC Electronics Technology (HK) Limited

60V 20A 25m Ω 2.5V N Channel TO-252 MOSFETs ROHS [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-252 (DPAK)
  • Polarity: N-Channel
-40V P-Channel Enhancement-Mode MOSFET -- VP0104
from Microchip Technology, Inc.

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient... [See More]

  • Transistor Type: MOSFET
  • Package Type: TO-92
  • Polarity: P-Channel
1200V Nch 4-pin Package SiC-MOSFET -- SCT3105KR
from ROHM Semiconductor USA, LLC

SCT3105KR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed... [See More]

  • Transistor Type: MOSFET
  • Transistor Grade / Operating Range: Commercial
  • Polarity: N-Channel