Complementary Transistors
Last Updated: January 31, 2025
Description
Complementary transistors are a pair of transistors that consist of one NPN and one PNP transistor. These transistors are used together in various electronic circuits to achieve specific functionalities, such as amplification and switching. The complementary nature of these transistors allows them to work in tandem, providing balanced performance in circuits.
Working Principle
Complementary transistors operate by utilizing the distinct characteristics of NPN and PNP transistors. In a complementary configuration, the NPN transistor conducts when a positive voltage is applied to its base, while the PNP transistor conducts when a negative voltage is applied to its base. This complementary action allows for efficient current flow and control in circuits, making them particularly useful in applications like push-pull amplifier circuits where they help reduce distortion and improve efficiency.
Applications
Complementary transistors are commonly used in push-pull amplifier circuits, which are essential in audio amplification systems. These circuits benefit from the complementary action of the transistors to provide high-quality sound output with minimal distortion. Additionally, complementary transistors are employed in power management systems where efficient switching and amplification are required.
Advantages over other Transistors
One of the primary advantages of complementary transistors is their ability to reduce distortion in amplifier circuits. By using both NPN and PNP transistors, complementary configurations can achieve more linear amplification, which is crucial for high-fidelity audio applications. Furthermore, the complementary nature allows for efficient power usage, making them suitable for applications where energy efficiency is a priority.
Limitations
Complementary transistors, while advantageous in many applications, can have limitations such as increased complexity in circuit design. The need to balance the characteristics of both NPN and PNP transistors can complicate the design process. Additionally, the performance of complementary transistors can be affected by temperature variations, which may require additional components for thermal management.
Considerations
When considering the use of complementary transistors, it is important to evaluate factors such as initial costs and operating expenses. The complexity of the circuit design may lead to higher initial costs due to the need for precise matching of transistor pairs. Operating expenses can be influenced by the efficiency of the transistors in the specific application. Durability and maintenance costs should also be considered, as the complementary configuration may require more frequent adjustments or replacements to maintain optimal performance.
from Win Source Electronics
Win Source Part Number: 1079528-MMDT2227A_R1_00001. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 225mW, 200mW. Voltage - Collector Emitter Breakdown (Max): 40V, 60V. Current -... [See More]
- Polarity: NPN; PNP; Complementary
- Package Type: SOT3
- Transistor Type: BJT; Bipolar RF
from Nexperia B.V.
NPN/PNP low VCEsat transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PBSS4112PAN. PNP/PNP complement: PBSS5112PAP. Features and benefits. Very low collector-emitter saturation voltage VCEsat. High collector current capability... [See More]
- Polarity: Complementary
- Package Type: SOT1118
from ODG (Origin Data Global)
DUAL SURFACE MOUNT NPN/PNP TRANS [See More]
- Polarity: NPN; PNP; Complementary; NPN, PNP Complementary
- Package Type: 6-TSSOP, SC-88, SOT-363
- Transistor Type: Bipolar RF
from Rochester Electronics
Silicon N-Channel/P-Channel Complementary Power MOSFET [See More]
- Polarity: N-Channel; P-Channel; Complementary
- Package Type: SP-12TA
- Transistor Type: MOSFET; Power-MOSFET
from Win Source Electronics
Win Source Part Number: 1115671-BC847BPN_R1_00001. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 200mW. Voltage - Collector Emitter Breakdown (Max): 45V. Current - Collector... [See More]
- Polarity: NPN; PNP; Complementary
- Package Type: SOT3
- Transistor Type: BJT; Bipolar RF
from Nexperia B.V.
NPN/PNP low VCEsat transistor pair in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. . Features and benefits. Low collector-emitter saturation voltage. High current capability. Replaces two SC-70 packaged low VCEsat transistors on same PCB area. Reduces required PCB area. [See More]
- Polarity: Complementary
- Package Type: SOT363
from ODG (Origin Data Global)
TRANS NPN/PNP 45V 100MA SOT363 [See More]
- Polarity: NPN; PNP; Complementary; NPN, PNP Complementary
- Package Type: 6-TSSOP, SC-88, SOT-363
- Transistor Type: Bipolar RF
from Rochester Electronics
20V-60V Complementary MOSFET [See More]
- Polarity: Complementary
- Package Type: PG-TSDSON-8
- Transistor Type: MOSFET
from Win Source Electronics
Win Source Part Number: 959752-MMDT3946-7R-F. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel (TR). Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 200mW. Voltage - Collector Emitter Breakdown (Max): 40V. Current - Collector... [See More]
- Polarity: NPN; PNP; Complementary
- Package Type: SOT3
- Transistor Type: BJT; Bipolar RF
from Nexperia B.V.
NPN/PNP low VCEsat transistor pair in an SC-74 (SOT457) plastic package. Features and benefits. 600 mW total power dissipation. Low collector-emitter saturation voltage. High current capability. Improved device reliability due to reduced heat generation. Replaces two SOT23 packaged low VCEsat... [See More]
- Polarity: Complementary
- Transistor Grade / Operating Range: Automotive
- Package Type: SOT457
from ODG (Origin Data Global)
TRANS NPN/PNP 40V 200MA 6DFN [See More]
- Polarity: NPN; PNP; Complementary; NPN, PNP Complementary
- Package Type: 6-XFDFN Exposed Pad
- Transistor Type: Bipolar RF
from Rochester Electronics
20V-60V Complementary MOSFET [See More]
- Polarity: Complementary
- Package Type: PG-TSDSON-8
- Transistor Type: MOSFET
from Win Source Electronics
Win Source Part Number: 1009648-FDG6332C-PG. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: PowerTrench ®. Package: Tape & Reel (TR). Standard Package: 3,000. Mounting: SMD (SMT). FET Type: N and P-Channel Complementary. FET Feature: Standard. [See More]
- Polarity: P-Channel; Complementary
- Package Type: SOT3
- Transistor Type: MOSFET
from Nexperia B.V.
NPN/PNP double switching transistor in a SOT666 ultra small and flat lead Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: PMBT3904VS. PNP/PNP complement: PMBT3906VS. Features and benefits. Double general-purpose switching transistor. Board-space reduction. Ultra small and flat lead... [See More]
- Polarity: Complementary
- Package Type: SOT666
from Rochester Electronics
Complementary Bipolar Digital Transistor (BRT) [See More]
- Polarity: Complementary
- Package Type: SOT-553, 5 LEAD
- Transistor Type: Bipolar RF
from Win Source Electronics
Win Source Part Number: 1018761-DMC6040SSDQ-13. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel (TR). Standard Package: 2,500. Mounting: SMD (SMT). FET Type: N and P-Channel Complementary. FET Feature:... [See More]
- Polarity: P-Channel; Complementary
- Package Type: SOT3
- Transistor Type: MOSFET
from Nexperia B.V.
NPN/PNP general-purpose double transistors in a leadless ultra small DFN1412-6 (SOT1268) Surface-Mounted Device (SMD) plastic package. NPN/NPN complement: BC847RA. PNP/PNP complement: BC857RA. Features and benefits. Reduces component count. Reduces pick and place costs. Low package height of 0.5 mm. [See More]
- Polarity: Complementary
- Package Type: SOT1268
- Transistor Type: BJT
from Rochester Electronics
EMC3DXV5 - Complementary Bipolar Digital Transistor (BRT) [See More]
- Polarity: Complementary
- Package Type: SOT-5X3-EUT-CPR
- Transistor Type: Bipolar RF
from Win Source Electronics
Win Source Part Number: 1045128-AOD609G. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tape & Reel. Standard Package: 2,500. Mounting: SMD (SMT). FET Type: N and P-Channel Complementary. FET Feature: Standard. Drain to Source Voltage (Vdss): 40V. [See More]
- Polarity: P-Channel; Complementary
- Package Type: SOT3; TO-252 (DPAK)
- Transistor Type: MOSFET
from Nexperia B.V.
NPN/PNP general-purpose transistor in a leadless ultra small DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package. Features and benefits. Reduces component count. Reduces pick and place costs. AEC-Q101 qualified. Low package height of 0.37 mm. Applications. General-purpose switching and... [See More]
- Polarity: Complementary
- Package Type: SOT1216
- Transistor Type: BJT
from Rochester Electronics
Complementary Bipolar Digital Transistor (BRT) [See More]
- Polarity: Complementary
- Package Type: SOT-553, 5 LEAD
- Transistor Type: Bipolar RF
from Win Source Electronics
Win Source Part Number: 1085314-PJS6600_S1_00001. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). FET Type: N and P-Channel Complementary. FET Feature: Standard. Drain to Source Voltage... [See More]
- Polarity: P-Channel; Complementary
- Package Type: SOT3; SOT23
- Transistor Type: MOSFET
from Nexperia B.V.
NPN/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. NPN/NPN complement: PBSS4160PANS. PNP/PNP complement: PBSS5160PAPS. Features and benefits. Very low... [See More]
- Polarity: Complementary
- Package Type: SOT1118D
from Rochester Electronics
Complementary Bipolar Digital Transistor (BRT) [See More]
- Polarity: Complementary
- Package Type: SOT-563, 6 LEAD
- Transistor Type: Bipolar RF
from Win Source Electronics
Win Source Part Number: 1149000-BSS8402DWQ-13. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel (TR). Standard Package: 10,000. Mounting: SMD (SMT). FET Type: N and P-Channel Complementary. FET Feature:... [See More]
- Polarity: P-Channel; Complementary
- Package Type: SOT3
- Transistor Type: MOSFET
from Nexperia B.V.
An NPN/PNP matched pair transistor in a SOT143B plastic package. Features and benefits. Low current (max. 100 mA). Low voltage (max. 30 V). AEC-Q101 qualified. Applications. General purpose switching and amplification. [See More]
- Polarity: Complementary
- Package Type: SOT143; SOT143B
- Transistor Type: BJT
- Transistor Grade / Operating Range: Automotive
from Rochester Electronics
Complementary Bipolar Digital Transistor (BRT) [See More]
- Polarity: Complementary
- Package Type: SOT-563
- Transistor Type: Bipolar RF
from Win Source Electronics
Manufacturer: Diodes Incorporated. Win Source Part Number: 1324336-DMC4040SSDQ-13. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Packaging: Reel - TR. Standard Package: 2,500. Mounting: Surface Mount. FET Type: N and P-Channel Complementary. FET Feature: Logic... [See More]
- Polarity: P-Channel; Complementary
- Package Type: SOT3; 8-SOIC (0.154", 3.90mm Width)
- Transistor Type: MOSFET
from Nexperia B.V.
NPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK. PNP/PNP complement: PHPT610030PK. Features and benefits. High thermal power dissipation capability. Suitable for high temperature applications up... [See More]
- Polarity: Complementary
- Transistor Grade / Operating Range: Automotive
- Package Type: SOT1205
from Rochester Electronics
NPN & PNP Complementary Dual Transistor [See More]
- Polarity: NPN; PNP; Complementary
- Package Type: SOT23; TSOT-23-6
from Win Source Electronics
Win Source Part Number: 960316-DMC3016LDV-7. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 2,000. Mounting: SMD (SMT). FET Type: N and P-Channel Complementary. FET Feature: Standard. Drain... [See More]
- Polarity: P-Channel; Complementary
- Package Type: SOT3
- Transistor Type: MOSFET
from Rochester Electronics
Bipolar Transistor, (-)50V, (-)1A, Low VCE(sat) Complementary Dual MCPH6 [See More]
- Polarity: Complementary
- Package Type: SC 88FL / MCPH6
- Transistor Type: Bipolar RF
from Win Source Electronics
Win Source Part Number: 988508-DMC3071LVT-7. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Arrays. Package: Tape & Reel (TR). Standard Package: 3,000. Mounting: SMD (SMT). FET Type: N and P-Channel Complementary. FET Feature: Standard. Drain to Source Voltage... [See More]
- Polarity: P-Channel; Complementary
- Package Type: SOT3; SOT26
- Transistor Type: MOSFET
from Rochester Electronics
Complementary Bipolar Digital Transistor (BRT) [See More]
- Polarity: Complementary
- Package Type: SC-88/SC70-6/SOT-363 6 LEAD
- Transistor Type: Bipolar RF
from Win Source Electronics
Win Source Part Number: 1338832-DMC2710UVT-7. Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays. Package: Tape & Reel. Standard Package: 3,000. Technology: MOSFET (Metal Oxide). Drain to Source Voltage (Vdss): 20V. Power - Max: 500mW (Ta). [See More]
- Polarity: P-Channel; Complementary
- Package Type: SOT3; SOT23
- Transistor Type: MOSFET
from Rochester Electronics
Complementary Bipolar Digital Transistor (BRT) [See More]
- Polarity: Complementary
- Package Type: SC-88/SC70-6/SOT-363 6 LEAD
- Transistor Type: Bipolar RF
from Win Source Electronics
Win Source Part Number: 1376809-PMCXB900UELZ. Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays. Temperature Range - Operating: -55 °C ~ 150 °C (TJ). Fake Threat In the Open Market: 37 pct. MSL Level: 1 (Unlimited). Mfr: Nexperia USA Inc. Package:... [See More]
- Polarity: P-Channel; Complementary
- Package Type: SOT3
from Rochester Electronics
MUN5338DW - 4.7kOhm, 10kOhm Complementary Bias Resistor Transistors Consumer/Industrial Qualified [See More]
- Polarity: Complementary
- Package Type: SC-88-6-EUT-CPR
from Win Source Electronics
Win Source Part Number: 1376890-DMC67D8UFDBQ-7. Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays. Package: Tape & Reel. Temperature Range - Operating: -55 °C ~ 150 °C (TJ). Fake Threat In the Open Market: 36 pct. MSL Level: 1 (Unlimited). [See More]
- Polarity: P-Channel; Complementary
- Package Type: SOT3
- Transistor Type: MOSFET
from Rochester Electronics
Complementary Bipolar Digital Transistor (BRT) [See More]
- Polarity: Complementary
- Package Type: SOT-963 1x1, 0.35P
- Transistor Type: Bipolar RF
from Win Source Electronics
Win Source Part Number: 1376898-DMC3060LVT-7. Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays. Temperature Range - Operating: -55 °C ~ 150 °C (TJ). Fake Threat In the Open Market: 39 pct. MSL Level: 1 (Unlimited). Mfr: Diodes Incorporated. [See More]
- Polarity: P-Channel; Complementary
- Package Type: SOT3; SOT23
- Transistor Type: MOSFET
from Rochester Electronics
Complementary Bipolar Digital Transistor (BRT) [See More]
- Polarity: Complementary
- Package Type: SC-88A (SC-70-5 / SOT-353)
- Transistor Type: Bipolar RF
from Win Source Electronics
Win Source Part Number: 1376911-DMC2710UDW-7. Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - FET, MOSFET Arrays. Temperature Range - Operating: -55 °C ~ 150 °C (TJ). Fake Threat In the Open Market: 41 pct. MSL Level: 1 (Unlimited). Mfr: Diodes Incorporated. [See More]
- Polarity: P-Channel; Complementary
- Package Type: SOT3
- Transistor Type: MOSFET
from Rochester Electronics
PMCXB1000UE - 30 V, complementary N/P-channel Trench MOSFET [See More]
- Polarity: P-Channel; Complementary
- Package Type: SOT1216
- Transistor Type: MOSFET
from Win Source Electronics
Alternative Parts (Cross-Reference): Cross. Manufacturer: Diodes Incorporated. Category: Discrete Semiconductor Products Transistors FETs, MOSFETs FET, MOSFET Arrays. Package: Tape & Reel (TR) Cut Tape (CT) Digi-Reel ®. Configuration: N and P-Channel Complementary. Product Status: Active. [See More]
- Polarity: P-Channel; Complementary
- Package Type: SOT3
- Transistor Type: MOSFET
from Rochester Electronics
1.0 AMP COMPLEMENTARY SILICON POWER TRANSISTOR [See More]
- Polarity: Complementary
- Package Type: TO-220; TO-220-3
- Transistor Type: Power-MOSFET
from Win Source Electronics
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 801390-AO6608. Packaging: Reel. Mounting Style: SMD. FET Type: N and P-Channel Complementary. FET Feature: Standard. Drain to Source Voltage (Vdss): 30V, 20V. Power - Max: 1.25W. Supplier Device Package: 6-TSOP. Temperature... [See More]
- Polarity: P-Channel; Complementary
- Package Type: SOT3
- Transistor Type: MOSFET
from Win Source Electronics
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 805945-AOD607A. Packaging: Reel. Mounting Style: SMD. FET Type: N and P-Channel Complementary. FET Feature: Standard. Drain to Source Voltage (Vdss): 30V. Power - Max: 19W (Tc), 30W (Tc). Supplier Device Package: TO-252-4L. [See More]
- Polarity: P-Channel; Complementary
- Package Type: SOT3; TO-252 (DPAK)
- Transistor Type: MOSFET
from Win Source Electronics
Manufacturer: Diodes Incorporated. Win Source Part Number: 803558-DMC2038LVTQ-7. Packaging: Reel. Mounting Style: SMD. FET Type: N and P-Channel Complementary. FET Feature: Logic Level Gate, 1.8V Drive. Drain to Source Voltage (Vdss): 20V. Power - Max: 800mW. Supplier Device Package: TSOT-26. [See More]
- Polarity: P-Channel; Complementary
- Package Type: SOT3; SOT23; SOT26
- Transistor Type: MOSFET
from Win Source Electronics
Manufacturer: Diodes Incorporated. Win Source Part Number: 806713-DMC3016LNS-7. Packaging: Reel. Mounting Style: SMD. FET Type: N and P-Channel Complementary. FET Feature: Standard. Drain to Source Voltage (Vdss): 30V. Power - Max: 1.3W. Supplier Device Package: PowerDI3333-8. Temperature Range -... [See More]
- Polarity: P-Channel; Complementary
- Package Type: SOT3
- Transistor Type: MOSFET
from Win Source Electronics
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 180389-AO4606. Packaging: Reel - TR. Mounting: SMD (SMT). FET Type: N and P-Channel Complementary. FET Feature: Standard. Categories: Discrete Semiconductor Products. Status: Obsolete(EOL). Temperature Range - Operating: -55... [See More]
- Polarity: P-Channel; Complementary
- Package Type: SOT3; 8-SOIC
- Transistor Type: MOSFET
from Win Source Electronics
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 180390-AO4606L. Packaging: Reel - TR. Mounting: SMD (SMT). FET Type: N and P-Channel Complementary. FET Feature: Standard. Categories: Discrete Semiconductor Products. Status: Obsolete(EOL). Temperature Range - Operating: -55... [See More]
- Polarity: P-Channel; Complementary
- Package Type: SOT3; 8-SOIC
- Transistor Type: MOSFET
from Win Source Electronics
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 1016805-AO4630. Packaging: Reel - TR. Mounting: SMD (SMT). FET Type: N and P-Channel Complementary. Categories: Discrete Semiconductor Products. Status: Active. Temperature Range - Operating: -55 °C to 150 °C (TJ). [See More]
- Polarity: P-Channel; Complementary
- Package Type: SOT3; 8-SO
- Transistor Type: MOSFET
from Win Source Electronics
Manufacturer: Alpha & Omega Semiconductor Inc. Win Source Part Number: 199081-AO5600EL. Packaging: Reel - TR. Mounting: SMD (SMT). FET Type: N and P-Channel Complementary. FET Feature: Standard. Categories: Discrete Semiconductor Products. Status: Obsolete(EOL). Temperature Range - Operating:... [See More]
- Polarity: P-Channel; Complementary
- Package Type: SOT3; SC-89-6
- Transistor Type: MOSFET
from PANJIT SemiConductor
Small signal bipolar junction transistor [See More]
- Polarity: Complementary
- Package Type: SOT-363
- Transistor Type: BJT
from TT Semiconductor, Inc.
The TT Semiconductor 1300 series are large-geometry, 4-transistor, monolithic NPN and/or PNP arrays exhibiting both high speed and low noise, with excellent parameter matching between transistors of the same gender. With typical base-spreading resistances of 25 ohms for the PNP devices (30 ohms for... [See More]
- Polarity: Complementary
- Package Type: Die Form 0.021" Thick
- Transistor Type: BJT
- Transistor Grade / Operating Range: Military; Mil-Processed, Extended Temperature
from Linear Systems
The LS26VNS N-Channel Single JFET voltage controlled resistor has a drain-source resistance that is controlled by a DC bias voltage (VGS) applied to a high impedance gate terminal. Minimum RDS of 14 Ω occurs when VGS = -1.0V. As VGS approaches the pinch-off voltage of -6.0V RDS rapidly... [See More]
- Polarity: N-Channel; P-Channel; Complementary
from Advanced Linear Devices, Inc.
MOSFET Array N and P-Channel Complementary 10.6V - 500mW Through Hole 8-PDIP [See More]
- Polarity: Complementary
- Package Type: PDIP8
- Transistor Type: MOSFET
from Microchip Technology, Inc.
TC8020 consists of six pairs of high voltage, low threshold N- and P-channel MOSFETs in a 56-lead QFN package. All MOSFETs have integrated gate-to-source resistors and gate-to-source Zener diode clamps which are desired for high voltage pulser applications. The complimentary, high-speed, high... [See More]
- Polarity: Complementary
- Package Type: QFN-56
- Transistor Type: MOSFET
from Utmel Electronic Limited
MOSFET Enh FET 12Vdss 8Vgss 20V Complementary [See More]
- Polarity: Complementary
- Transistor Type: MOSFET
from Advanced Linear Devices, Inc.
MOSFET Array N and P-Channel Complementary 10.6V - 500mW Surface Mount 8-SOIC [See More]
- Polarity: Complementary
- Package Type: SOIC8
- Transistor Type: MOSFET
from Advanced Linear Devices, Inc.
MOSFET Array 2 N and 2 P-Channel Matched Pair 10.6V 40mA, 16mA 500mW Through Hole 14-PDIP [See More]
- Polarity: Complementary
- Package Type: PDIP14
- Transistor Type: MOSFET
from Advanced Linear Devices, Inc.
MOSFET Array 2 N and 2 P-Channel Matched Pair 10.6V 40mA, 16mA 500mW Surface Mount 14-SOIC [See More]
- Polarity: Complementary
- Package Type: SOIC14
- Transistor Type: MOSFET
from Advanced Linear Devices, Inc.
MOSFET Array 2 N and 2 P-Channel Matched Pair 10.6V - 500mW Through Hole 14-PDIP [See More]
- Polarity: Complementary
- Package Type: PDIP14
- Transistor Type: MOSFET
from Advanced Linear Devices, Inc.
MOSFET Array 2 N and 2 P-Channel Matched Pair 10.6V - 500mW Surface Mount 14-SOIC [See More]
- Polarity: Complementary
- Package Type: SOIC14
- Transistor Type: MOSFET