TO-247 Transistors

AEC 101 Qualified, 650V, 40A Fieldstop 4 trench IGBT [See More]

• Package Type: TO-247; TO-247-3LD

• Transistor Type: IGBT

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

• Package Type: TO-247; PG-TO247-3
• Polarity: N-Channel; N

• Transistor Type: MOSFET; Power-MOSFET
• Transistor Technology / Material: Si/SiC

Power MOS V ® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V ® also achieves faster switching speeds through optimized gate layout. [See More]

• Package Type: TO-247; TO-247

• Transistor Type: Power FREDFET Transistor

1200V/65MOHM, SIC, N-ON JFET, G3 [See More]

• Package Type: TO-247; TO-247-3
• Polarity: N-Channel; N-Channel

• Transistor Type: JFET

Transistor Bipolar NPN 250V 60A TO247 [See More]

• Package Type: TO-247; TO-247
• Polarity: NPN

• Transistor Type: BJT

Win Source Part Number: 1050109-BUTW92. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Single. Package: Tube. Standard Package: 30. Power - Max: 180 W. Voltage - Collector Emitter Breakdown (Max): 250 V. Current - Collector (Ic) (Max): 45 A. Transistor Type: NPN. Vce... [See More]

• Package Type: TO-247; SOT3
• Polarity: NPN

• Transistor Type: BJT; Bipolar RF

JFET N-CH 1200V 120A TO247-4 [See More]

• Package Type: TO-247; TO-247-4
• Transistor Grade / Operating Range: Automotive

• Polarity: N-Channel

FCH060N80 - N-Channel SuperFETII MOSFET [See More]

• Package Type: TO-247; TO-247
• Polarity: N-Channel

• Transistor Type: MOSFET

Infineon ’s answer to resonant high power topologies. The 600V CoolMOS ™ CFD7 is Infineon ’s latest high voltage superjunction MOSFET technology with integrated fast body diode, completing the CoolMOS ™ 7 series. CoolMOS ™ CFD7 comes with reduced gate charge (Qg),... [See More]

• Package Type: TO-247; PG-TO247-3
• Polarity: N-Channel; N

• Transistor Type: MOSFET; Power-MOSFET
• Transistor Technology / Material: Si/SiC

Power MOS 7 ® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 ® by significantly lowering RDS(ON) and Qg. Power MOS 7 ® combines lower conduction and switching losses along... [See More]

• Package Type: TO-247; TO-247

• Transistor Type: Power FREDFET Transistor

FET RF N-CH 500V 14A TO247 [See More]

• Package Type: TO-247; TO-247-3
• Polarity: N-Channel; N-Channel

• Transistor Type: MOSFET; MOSFET RF; MOSFET
• Transistor Technology / Material: MOSFET

Transistor NPN 700V 8A TO-247 [See More]

• Package Type: TO-247; TO-247
• Polarity: NPN

• Transistor Type: BJT

Win Source Part Number: 1078918-MJW0302AG. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Single. Package: Tube. Standard Package: 30. Power - Max: 150 W. Voltage - Collector Emitter Breakdown (Max): 260 V. Current - Collector (Ic) (Max): 15 A. Transistor Type: PNP. Vce... [See More]

• Package Type: TO-247; SOT3
• Polarity: PNP

• Transistor Type: BJT; Bipolar RF

JFET N-Channel 650V 85A 441W Through Hole TO-247-3 [See More]

• Package Type: TO-247; TO-247-3

• Polarity: N-Channel

IGBT, 650V, 40A Field Stop Trench [See More]

• Package Type: TO-247; TO-247 3L

• Transistor Type: IGBT

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Package Type: TO-247; PG-TO247-3
• Polarity: N-Channel; N

• Transistor Type: MOSFET; Power-MOSFET
• Transistor Technology / Material: Si/SiC

Ultra Fast NPT - IGBT ®. The Ultra Fast NPT - IGBT ® is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT ® offers superior ruggedness and ultrafast switching speed. Features. Low Saturation Voltage. Short Circuit Withstand... [See More]

• Package Type: TO-247; TO-247

• Transistor Type: IGBT

RF MOSFET LDMOS 50V TO247 [See More]

• Package Type: TO-247; TO-247-3
• Transistor Technology / Material: LDMOS

• Transistor Type: MOSFET; MOSFET RF; LDMOS

PNP Power Transistor 250V 16A 200W TO247 [See More]

• Package Type: TO-247; TO-247
• Polarity: PNP

• Transistor Type: BJT

Win Source Part Number: 1278583-STW3040. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Single. Package: Tube. Standard Package: 30. Power - Max: 160 W. Voltage - Collector Emitter Breakdown (Max): 400 V. Current - Collector (Ic) (Max): 30 A. Transistor Type: NPN. Vce... [See More]

• Package Type: TO-247; SOT3

• Polarity: NPN

JFET N-Channel 650V 32A 190W Through Hole TO-247-3 [See More]

• Package Type: TO-247; TO-247-3

• Polarity: N-Channel

Insulated Gate Bipolar Transistor, 85A I(C), 650V V(BR)CES, N-Channel, TO-247 [See More]

• Package Type: TO-247; TO-247-4
• Polarity: N-Channel

• Transistor Type: Bipolar RF

Infineons CoolMOS ™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS ™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of... [See More]

• Package Type: TO-247; PG-TO247-3
• Polarity: N-Channel; N

• Transistor Type: MOSFET; Power-MOSFET
• Transistor Technology / Material: Si/SiC

Super Junction MOSFET [See More]

• Package Type: TO-247; TO-247

• Transistor Type: MOSFET; Power-MOSFET

TRANS PNP DARL 100V 10A TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• Polarity: PNP; PNP - Darlington

• Transistor Type: Bipolar RF

MJW18020G, BIP T0247 NPN 20A 450V [See More]

• Package Type: TO-247; TO-247
• Polarity: NPN

• Transistor Type: BJT

Win Source Part Number: 1377204-MJW0281A. Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors. Temperature Range - Operating: -65 °C ~ 150 °C (TJ). Fake Threat In the Open Market: 48 pct. MSL Level: 1 (Unlimited). Mfr: onsemi. Package: Tube. [See More]

• Package Type: TO-247; SOT3

• Polarity: NPN

JFET N-Channel 1200V 63A 429W Through Hole TO-247-3 [See More]

• Package Type: TO-247; TO-247-3

• Polarity: N-Channel

HEXFET Power MOSFET [See More]

• Package Type: TO-247; TO-247

• Transistor Type: MOSFET; Power-MOSFET

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Package Type: TO-247; PG-TO247-3
• Polarity: N-Channel; N

• Transistor Type: MOSFET; Power-MOSFET
• Transistor Technology / Material: Si/SiC

TRANS NPN 700V 8A TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• Polarity: NPN; NPN

• Transistor Type: Bipolar RF

NPN Power Transistor 250V 16A 200W TO247 [See More]

• Package Type: TO-247; TO-247
• Polarity: NPN

• Transistor Type: BJT

Win Source Part Number: 1017915-ARF446G. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Bulk. Standard Package: 1. Voltage - Rated: 900 V. Frequency: 40.68MHz. Gain: 15dB. Transistor Type: N-Channel. Voltage - Test: 250 V. Power - Output: 140W. Package /... [See More]

• Package Type: TO-247; SOT3
• Polarity: N-Channel

• Transistor Type: MOSFET; MOSFET RF

JFET N-Channel 1200V 34A 254W Through Hole TO-247-3 [See More]

• Package Type: TO-247; TO-247-3

• Polarity: N-Channel

NVHL160N - Silicon Carbide MOSFET, N Channel, 1200 V, 160 m [See More]

• Package Type: TO-247; TO-247

• Transistor Type: MOSFET

The 650V CoolMOS ™ CFD7 superjunction MOSFET with integrated fast body diode in TO-247 package is the perfect choice for resonant high power topologies. Infineon ’s 650V CoolMOS ™ CFD7 superjunction MOSFET IPW65R018CFD7 in TO-247 package is ideally suited for resonant topologies in... [See More]

• Package Type: TO-247; PG-TO247-3
• Polarity: N-Channel; N

• Transistor Type: MOSFET; Power-MOSFET
• Transistor Technology / Material: Si/SiC

TRANS NPN 450V 15A TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• Polarity: NPN; NPN

• Transistor Type: Bipolar RF

NPN transistor for high-power switch [See More]

• Package Type: TO-247; TO-247
• Polarity: NPN

• Transistor Type: BJT

Win Source Part Number: 1208971-ARF447G. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - RF. Package: Bulk. Standard Package: 1. Voltage - Rated: 900 V. Frequency: 40.68MHz. Gain: 15dB. Transistor Type: N-Channel. Voltage - Test: 250 V. Power - Output: 140W. Package /... [See More]

• Package Type: TO-247; SOT3
• Polarity: N-Channel

• Transistor Type: MOSFET; MOSFET RF

JFET N-Channel 1200V 33.5A 254W Through Hole TO-247-3 [See More]

• Package Type: TO-247; TO-247-3

• Polarity: N-Channel

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Package Type: TO-247; PG-TO247-3
• Polarity: N-Channel; N

• Transistor Type: MOSFET; Power-MOSFET
• Transistor Technology / Material: Si/SiC

TRANS PNP 100V 10A TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• Polarity: PNP; PNP

• Transistor Type: Bipolar RF

NPN transistor for high-power switch [See More]

• Package Type: TO-247; TO-247
• Polarity: NPN

• Transistor Type: BJT

Win Source Part Number: 1353438-MRF300BN. Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF FETs, MOSFETs. Fake Threat In the Open Market: 42 pct. MSL Level: Not Applicable. Mfr: NXP USA Inc. Package: Tube. Product Status: Active. Frequency: 27MHz ~ 250MHz. Package / Case:... [See More]

• Package Type: TO-247; SOT3

• Transistor Type: MOSFET; MOSFET RF

JFET N-Channel 26A 190W Through Hole PG-TO247-3 [See More]

• Package Type: TO-247; TO-247-3

• Polarity: N-Channel

CoolMOS ™ C7 superjunction MOSFET offers best-in-class performance in PFC and LLC topologies. The 600V CoolMOS ™ C7 superjunction (SJ) MOSFET series offers a ~50% reduction in turn-off losses (E oss ) compared to the CoolMOS ™ CP, offering an outstanding level of performance in... [See More]

• Package Type: TO-247; PG-TO247-4
• Polarity: N-Channel; N

• Transistor Type: MOSFET; Power-MOSFET
• Transistor Technology / Material: Si/SiC

TRANS NPN 100V 25A TO218 [See More]

• Package Type: TO-247; TO-247-3
• Polarity: NPN; NPN

• Transistor Type: Bipolar RF

PNP Power Transistor 250V 16A 200W TO247 [See More]

• Package Type: TO-247; TO-247
• Polarity: PNP

• Transistor Type: BJT

Win Source Part Number: 1382953-MRF300AN. Category: Discrete Semiconductor Products >Transistors >FETs, MOSFETs >RF FETs, MOSFETs. Package: Tube. Standard Package: 30 pcs. Technology: LDMOS. Frequency: 27MHz ~ 250MHz. Gain: 28dB. Voltage - Test: 50 V. Power - Output: 300W. Mounting Type:... [See More]

• Package Type: TO-247; SOT3

• Transistor Type: MOSFET; MOSFET RF

RF Mosfet N-Channel 50V 200mA 13.56MHz 21dB 125W TO-247AD [See More]

• Package Type: TO-247; TO-247-3

Infineons CoolMOS ™ P6 superjunction MOSFET family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS ™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease-of-use. Summary of... [See More]

• Package Type: TO-247; PG-TO247-4
• Polarity: N-Channel; N

• Transistor Type: MOSFET; Power-MOSFET
• Transistor Technology / Material: Si/SiC

1200V COOLSIC MOSFET PG-TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• Polarity: N-Channel; N-Channel

• Transistor Type: MOSFET; SiCFET (Silicon Carbide)
• Transistor Technology / Material: SiCFET (Silicon Carbide)

NPN Power Transistor 250V 16A 200W TO247 [See More]

• Package Type: TO-247; TO-247
• Polarity: NPN

• Transistor Type: BJT

Win Source Part Number: 1004388-AOK160A60. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: aMOS5 ™. Package: Tube. Standard Package: 240. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current -... [See More]

• Package Type: TO-247; SOT3
• Polarity: N-Channel

• Transistor Type: MOSFET

RF Mosfet LDMOS 50V 27MHz ~ 250MHz 28dB 300W TO-247 [See More]

• Package Type: TO-247; TO-247-3

Infineon ’s CoolMOS ™ C7 superjunction MOSFET series is a revolutionary step forward in technology, providing the worlds ’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range. Summary of Features. 650V voltage. [See More]

• Package Type: TO-247; PG-TO247-4
• Polarity: N-Channel; N

• Transistor Type: MOSFET; Power-MOSFET
• Transistor Technology / Material: Si/SiC

MOSFET N-CH 600V 53A TO247 [See More]

• Package Type: TO-247; TO-247-3
• Polarity: N-Channel; N-Channel

• Transistor Type: MOSFET; MOSFET (Metal Oxide)
• Transistor Technology / Material: MOSFET (Metal Oxide)

PNP power transistor,TIP36C 25A [See More]

• Package Type: TO-247; TO-247
• Polarity: PNP

• Transistor Type: BJT

Win Source Part Number: 1005480-STW33N60M6. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: MDmesh ™ M6. Package: Tube. Standard Package: 600. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current -... [See More]

• Package Type: TO-247; SOT3
• Polarity: N-Channel

• Transistor Type: MOSFET

RF Mosfet LDMOS 50V 27MHz ~ 250MHz 18.7dB 300W TO-247 [See More]

• Package Type: TO-247; TO-247-3

Optimized superjunction MOSFETs merging high energy efficiency with ease-of-use. The 600V CoolMOS ™ P7 superjunction (SJ) MOSFET is the successor to the 600V CoolMOS ™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The... [See More]

• Package Type: TO-247; PG-TO247-4
• Polarity: N-Channel; N

• Transistor Type: MOSFET; Power-MOSFET
• Transistor Technology / Material: Si/SiC

MOSFET N-CH 1000V 11A TO247 [See More]

• Package Type: TO-247; TO-247-3
• Polarity: N-Channel; N-Channel

• Transistor Type: MOSFET; MOSFET (Metal Oxide)
• Transistor Technology / Material: MOSFET (Metal Oxide)

NPN power transistor,TIP35C 25A [See More]

• Package Type: TO-247; TO-247
• Polarity: NPN

• Transistor Type: BJT

Win Source Part Number: 1007989-FCH110N65F-F155. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: FRFET ®, SuperFET ® II. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss):... [See More]

• Package Type: TO-247; SOT3
• Polarity: N-Channel

• Transistor Type: MOSFET

TRANS NPN 100V 25A TO-247 [See More]

• Package Type: TO-247; TO-247-3

• Polarity: NPN

650V CoolMOS ™ CFD7 superjunction MOSFET with integrated fast body diode. in TO-247 4-pin package. Infineon ’s 650V CoolMOS ™ CFD7 superjunction MOSFET IPZA65R029CFD7 in TO-247 4-pin package is ideally suited for resonant topologies in industrial applications, such as server,... [See More]

• Package Type: TO-247; PG-TO247-4
• Polarity: N-Channel; N

• Transistor Type: MOSFET; Power-MOSFET
• Transistor Technology / Material: Si/SiC

MOSFET N-CH 600V 106A T-MAX [See More]

• Package Type: TO-247; TO-247-3 Variant
• Polarity: N-Channel; N-Channel

• Transistor Type: MOSFET; MOSFET (Metal Oxide)
• Transistor Technology / Material: MOSFET (Metal Oxide)

PNP power transistor,TIP2955 TO-218 [See More]

• Package Type: TO-247; TO-247
• Polarity: PNP

• Transistor Type: BJT

Win Source Part Number: 1011110-SIHG22N60EF-GE3. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: EF. Package: Tube. Standard Package: 25. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current - Continuous... [See More]

• Package Type: TO-247; SOT3
• Polarity: N-Channel

• Transistor Type: MOSFET

TRANS NPN 450V 30A TO-247-3 [See More]

• Package Type: TO-247; TO-247-3

• Polarity: NPN

Summary of Features. Worldwide best RDS(on) in TO-247 package. Ultra low gate charge. Extreme dv/dt rated. High peak current capability. Automotive AEC Q101 qualified. Green package (RoHS compliant). Potential Applications. Infineon's CoolMOS ™ CPA SJ MOSFET is designed for DC-DC converters... [See More]

• Package Type: TO-247; PG-TO247-3
• Polarity: N-Channel; N

• Transistor Type: MOSFET
• Transistor Technology / Material: Si/SiC

MOSFET N-CH 500V 28A TO247AD [See More]

• Package Type: TO-247; TO-247-3
• Polarity: N-Channel; N-Channel

• Transistor Type: MOSFET; MOSFET (Metal Oxide)
• Transistor Technology / Material: MOSFET (Metal Oxide)

BIP T0247 PNP 15A 200V FG [See More]

• Package Type: TO-247; TO-247
• Polarity: PNP

• Transistor Type: BJT

Win Source Part Number: 1012660-STW45N60DM2AG. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: Automotive, AEC-Q101, MDmesh ™ DM2. Package: Tube. Standard Package: 30. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage... [See More]

• Package Type: TO-247; SOT3
• Polarity: N-Channel

• Transistor Type: MOSFET

Bipolar (BJT) Transistor NPN 250V 45A 180W Through Hole TO-247-3 [See More]

• Package Type: TO-247; TO-247-3

• Polarity: NPN

650V CoolMOS ™ N-channel automotive SJ power MOSFET CFD7A. The 35mOhm IPW65R035CFD7A in TO-247 package is part of the automotive-qualified 650V CoolMOS ™ SJ power MOSFET CFD7A product family. As compared to the previous generation, CoolMOS ™ CFD7A offers higher reliability and... [See More]

• Package Type: TO-247; PG-TO247-3
• Polarity: N-Channel; N

• Transistor Type: MOSFET
• Transistor Technology / Material: Si/SiC

N-CHANNEL SILICON CARBIDE POWER [See More]

• Package Type: TO-247; TO-247-3
• Polarity: N-Channel; N-Channel

• Transistor Type: MOSFET; SiCFET (Silicon Carbide)
• Transistor Technology / Material: SiCFET (Silicon Carbide)

BIP T0247 PNP 15A 200V FG [See More]

• Package Type: TO-247; TO-247
• Polarity: PNP

• Transistor Type: BJT

Win Source Part Number: 1016203-APT6038BFLLG. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: POWER MOS 7 ®. Package: Tube. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current -... [See More]

• Package Type: TO-247; SOT3
• Polarity: N-Channel

• Transistor Type: MOSFET

Bipolar (BJT) Transistor PNP 100V 10A 3MHz 80W Through Hole TO-247-3 [See More]

• Package Type: TO-247; TO-247-3

• Polarity: PNP

Radiation tolerant, 60V, 106A, N-channel MOSFET, PG-TO247, 30krad(Si) TID. Summary of Features. Optimized for LEO missions and constellations. Radiation tolerant (LET of 46 MeV ∙cm ²/mg). Qualified according to AEC-Q101 standard. Potential Applications. Ideally suited for all power... [See More]

• Package Type: TO-247; PG-TO247-3
• Polarity: N-Channel; N

• Transistor Type: MOSFET

MOSFET N-CH 150V 171A TO247AC [See More]

• Package Type: TO-247; TO-247-3
• Polarity: N-Channel; N-Channel

• Transistor Type: MOSFET; MOSFET (Metal Oxide)
• Transistor Technology / Material: MOSFET (Metal Oxide)

ON Semiconductor, MJW3281AG [See More]

• Package Type: TO-247; TO-247
• Polarity: NPN

• Transistor Type: BJT

Win Source Part Number: 1017649-NTH027N65S3F-F155. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: FRFET ®, SuperFET ® II. Package: Tube. Standard Package: 30. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss):... [See More]

• Package Type: TO-247; SOT3
• Polarity: N-Channel

• Transistor Type: MOSFET

Bipolar (BJT) Transistor PNP 100V 25A 3MHz 125W Through Hole TO-247-3 [See More]

• Package Type: TO-247; TO-247-3

• Polarity: PNP

600 V, 20 A IGBT Discrete in TO-247 package. High speed 600 V, 20 A single TRENCHSTOP ™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. [See More]

• Package Type: TO-247; PG-TO247-3

• Transistor Type: IGBT

SICFET N-CH 1200V 90A TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• Polarity: N-Channel; N-Channel

• Transistor Type: MOSFET; SiCFET (Silicon Carbide)
• Transistor Technology / Material: SiCFET (Silicon Carbide)

ON Semiconductor, MJW3281AG [See More]

• Package Type: TO-247; TO-247
• Polarity: NPN

• Transistor Type: BJT

Win Source Part Number: 1018480-RFG45N06. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Bulk. Standard Package: 1. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 60 V. Current - Continuous Drain (Id) @ 25 °C:... [See More]

• Package Type: TO-247; SOT3
• Polarity: N-Channel

• Transistor Type: MOSFET; Power-MOSFET

Bipolar (BJT) Transistor NPN 400V 30A 160W Through Hole TO-247-3 [See More]

• Package Type: TO-247; TO-247-3

• Polarity: NPN

600 V, 30 A IGBT Discrete in TO-247 package. High speed 600 V, 30 A single TRENCHSTOP ™ IGBT3 in a TO247 package provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. [See More]

• Package Type: TO-247; PG-TO247-3

• Transistor Type: IGBT

SICFET N-CH 1700V 72A TO247-4 [See More]

• Package Type: TO-247; TO-247-4
• Polarity: N-Channel; N-Channel

• Transistor Type: MOSFET; SiCFET (Silicon Carbide)
• Transistor Technology / Material: SiCFET (Silicon Carbide)

ON Semiconductor, TIP3055G [See More]

• Package Type: TO-247; TO-247
• Polarity: NPN

• Transistor Type: BJT

Win Source Part Number: 1018795-FCH099N65S3-F155. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: SuperFET ® III. Package: Tube. Standard Package: 450. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 650 V. [See More]

• Package Type: TO-247; SOT3
• Polarity: N-Channel

• Transistor Type: MOSFET

15 AMPERES COMPLEMENTARY SILICON [See More]

• Package Type: TO-247; TO-247-3

• Polarity: PNP

To further enhance the best-in-class performance of the TRENCHSTOP ™ 5 IGBT technology, Infineon offers the technology in a high power package with an extra Kelvin emitter pin. The TO-247 4pin provides ultra-low inductance to the gate-emitter control loop and brings TRENCHSTOP ™ 5 IGBT... [See More]

• Package Type: TO-247; PG-TO247-4

• Transistor Type: IGBT

SICFET N-CH 1700V 40A TO247-4 [See More]

• Package Type: TO-247; TO-247-4
• Polarity: N-Channel; N-Channel

• Transistor Type: MOSFET; SiCFET (Silicon Carbide)
• Transistor Technology / Material: SiCFET (Silicon Carbide)

AFGHL50T65SQDC BJT & Bipolar Transistors [See More]

• Package Type: TO-247; TO-247
• Polarity: NPN

• Transistor Type: BJT

Win Source Part Number: 1018876-IRF300P226. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: StrongIRFET ™. Package: Tube. Standard Package: 25. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 300 V. Current -... [See More]

• Package Type: TO-247; SOT3
• Polarity: N-Channel

• Transistor Type: MOSFET

15 AMPERES COMPLEMENTARY SILICON [See More]

• Package Type: TO-247; TO-247-3

• Polarity: NPN

1350 V, 20 A IGBT Discrete with anti-parallel diode in TO-247 package. The Reverse Conducting R5 1350 V, 20 A RC-H5 IGBTs with monolithically integrated reverse conducting diode in a TO-247 package has been optimized for the demanding requirements of Induction Cooking applications. With a... [See More]

• Package Type: TO-247; PG-TO247-3

• Transistor Type: IGBT

SICFET N-CH 650V 120A TO247-4L [See More]

• Package Type: TO-247; TO-247-4
• Polarity: N-Channel; N-Channel

• Transistor Type: MOSFET; SiCFET (Silicon Carbide)
• Transistor Technology / Material: SiCFET (Silicon Carbide)

AFGHL50T65SQDC BJT & Bipolar Transistors [See More]

• Package Type: TO-247; TO-247
• Polarity: NPN

• Transistor Type: BJT

Win Source Part Number: 1020211-IXFH6N100F. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: HiPerFET ™, F Class. Package: Tube. Standard Package: 30. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 1000 V. [See More]

• Package Type: TO-247; SOT3
• Polarity: N-Channel

• Transistor Type: MOSFET

650V 27MR, TO-247-4L, AUTOMOTIVE [See More]

• Package Type: TO-247; TO-247-4
• Transistor Technology / Material: Silicon Carbide

• Polarity: N-Channel

650 V, 40 A IGBT with monolithically integrated diode in TO-247 package. Reverse Conducting R6 650 V, 40 A IGBT in TO-247 package with monolithically integrated diode is designed to fulfill demanding requirements of induction heating applications using half-bridge resonant topology. Thanks to best... [See More]

• Package Type: TO-247; PG-TO247-3

• Transistor Type: IGBT

POWER FIELD-EFFECT TRANSISTOR [See More]

• Package Type: TO-247; TO-247-4
• Polarity: N-Channel; N-Channel

• Transistor Type: MOSFET; MOSFET (Metal Oxide)
• Transistor Technology / Material: MOSFET (Metal Oxide)

NPN power transistor,TIP3055 15A TO-247 [See More]

• Package Type: TO-247; TO-247
• Polarity: NPN

• Transistor Type: BJT

Win Source Part Number: 1021562-APT70SM70B. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Bulk. Standard Package: 1. Technology: SiCFET (Silicon Carbide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 700 V. Current - Continuous Drain (Id) @ 25... [See More]

• Package Type: TO-247; SOT3

• Polarity: N-Channel

1700V 1000MR, TO247-3L, INDUSTRI [See More]

• Package Type: TO-247; TO-247-3
• Transistor Technology / Material: Silicon Carbide

• Polarity: N-Channel

600 V, 30 A IGBT with anti-parallel diode in TO-247 package. Hard-switching 600 V, 30 A high speed TRENCHSTOP ™ IGBT3 co-packed with Rapid 1 fast and soft anti-parallel diode in a TO-247 advanced isolation package for a best cost efficient solution. Summary of Features. TRENCHSTOP ™... [See More]

• Package Type: TO-247; PG-HSIP247-3

• Transistor Type: IGBT

MOSFET N-CH 600V 77A TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• Polarity: N-Channel; N-Channel

• Transistor Type: MOSFET; MOSFET (Metal Oxide)
• Transistor Technology / Material: MOSFET (Metal Oxide)

PNP Power Transistor 250V 16A 200W TO247 [See More]

• Package Type: TO-247; TO-247
• Polarity: PNP

• Transistor Type: BJT

Win Source Part Number: 1022082-FCH041N65EFLN4. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: FRFET ®, SuperFET ® II. Package: Tube. Standard Package: 450. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss):... [See More]

• Package Type: TO-247; SOT3
• Polarity: N-Channel

• Transistor Type: MOSFET

MOSFET N-CH 60V 270A TO247 [See More]

• Package Type: TO-247; TO-247-3

• Polarity: N-Channel

650 V, 40 A IGBT in TO-247 advanced isolation package. Hard-switching 650 V, 40 A TRENCHSTOP ™ 5 H5 IGBT discrete in TO-247 advanced isolation package is the highest efficiency discrete IGBT technology on the market ideally suited for customers who are looking for outstanding efficiency and... [See More]

• Package Type: TO-247; PG-HSIP247-3

• Transistor Type: IGBT

MOSFET N-CH 650V 19A TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• Polarity: N-Channel; N-Channel

• Transistor Type: MOSFET; MOSFET (Metal Oxide)
• Transistor Technology / Material: MOSFET (Metal Oxide)

NPN Power Transistor 250V 16A 200W TO247 [See More]

• Package Type: TO-247; TO-247
• Polarity: NPN

• Transistor Type: BJT

Win Source Part Number: 1022276-NTH4L080N120SC1. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Tube. Standard Package: 30. Technology: SiCFET (Silicon Carbide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 1200 V. Current - Continuous Drain (Id)... [See More]

• Package Type: TO-247; SOT3

• Polarity: N-Channel

SICFET N-CH 1200V 20A TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• Transistor Technology / Material: Silicon Carbide

• Polarity: N-Channel

600 V, 120 A IGBT discrete with anti-parallel diode in TO-247PLUS package. Hard switching 600 V, 120 A TRENCHSTOP ™ IGBT technology in a TO-247PLUS package for higher current capability. The TO-247PLUS package allows up to 120 A in 600 V with the same outer dimensions as the industry standard... [See More]

• Package Type: TO-247; PG-TO247-3

• Transistor Type: IGBT

POWER FIELD-EFFECT TRANSISTOR, 4 [See More]

• Package Type: TO-247; TO-247-3
• Polarity: N-Channel; N-Channel

• Transistor Type: MOSFET; MOSFET (Metal Oxide)
• Transistor Technology / Material: MOSFET (Metal Oxide)

MJW18020G, BIP T0247 NPN 20A 450V [See More]

• Package Type: TO-247; TO-247
• Polarity: NPN

• Transistor Type: BJT

Win Source Part Number: 1023919-AOK42S60L. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: aMOS ™. Package: Tube. Standard Package: 240. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current -... [See More]

• Package Type: TO-247; SOT3
• Polarity: N-Channel

• Transistor Type: MOSFET

N-Channel 100V 100A (Tc) 625W (Tc) Through Hole T-MAX ™ [B2] [See More]

• Package Type: TO-247; TO-247-3 Variant

• Polarity: N-Channel

1200 V, 8 A IGBT7 S7 with anti-parallel diode in TO-247 package. Hard-switching 1200 V, 8 A TRENCHSTOP ™ IGBT7 S7 discrete in TO-247 package with EC7 diode inside. It offers low VCEsat to achieve very low conduction losses in target applications and the co-packed very soft and fast emitter... [See More]

• Package Type: TO-247; PG-TO247-3

• Transistor Type: IGBT

3300V 50M TO-247-4 SIC MOSFET [See More]

• Package Type: TO-247; TO-247-4
• Polarity: N-Channel; N-Channel

• Transistor Type: MOSFET; SiCFET (Silicon Carbide)
• Transistor Technology / Material: SiCFET (Silicon Carbide)

Trans Darlington NPN 100V 10A TO247 [See More]

• Package Type: TO-247; TO-247
• Polarity: NPN

• Transistor Type: Darlington

Win Source Part Number: 1025014-STW12NM60N. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Series: MDmesh ™. Package: Tube. Standard Package: 600. Technology: MOSFET (Metal Oxide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 600 V. Current -... [See More]

• Package Type: TO-247; SOT3
• Polarity: N-Channel

• Transistor Type: MOSFET

N-Channel 1200V 9A (Tc) 300W (Tc) Through Hole TO-247-3 [See More]

• Package Type: TO-247; TO-247-3

• Polarity: N-Channel

1200 V, 15 A IGBT with anti-parallel diode in TO-247 package. Hard-switching 1200 V, 15 A high speed TRENCHSTOP ™ IGBT6 in a TO-247 package co-packed with a very soft and fast recovery anti-parallel diode is optimized for the best compromise between switching and conduction losses. Summary of... [See More]

• Package Type: TO-247; PG-TO247-3

• Transistor Type: IGBT

SIC MOSFET N-CH 22A TO247-3 [See More]

• Package Type: TO-247; TO-247-3
• Polarity: N-Channel; N-Channel

• Transistor Type: MOSFET; SiCFET (Silicon Carbide)
• Transistor Technology / Material: SiCFET (Silicon Carbide)

Trans Darlington NPN 400V 15A TO247 [See More]

• Package Type: TO-247; TO-247
• Polarity: NPN

• Transistor Type: Darlington

Win Source Part Number: 1027135-APT25SM120B. Category: Discrete Semiconductor Products >Transistors - FETs, MOSFETs - Single. Package: Bulk. Standard Package: 1. Technology: SiCFET (Silicon Carbide). FET Type: N-Channel. Drain to Source Voltage (Vdss): 1200 V. Current - Continuous Drain (Id) @ 25... [See More]

• Package Type: TO-247; SOT3

• Polarity: N-Channel

ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. [See More]

• Package Type: TO-247; TO-247GE
• Transistor Grade / Operating Range: Commercial

• Transistor Type: IGBT

TRANS NPN 700V 8A TO247-3 [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: BJT

TO-247-3 Bipolar Transistors - BJT ROHS [See More]

• Package Type: TO-247

• Transistor Type: Bipolar RF

Karl Kruse  is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop... [See More]

• Package Type: TO-247
• Polarity: N-Channel

• Transistor Type: IGBT

SICFET N-CH 700V 110A TO247-3 [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

Polar ™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching performance. [See More]

• Package Type: TO-247; TO-247

• Polarity: P-Channel

R6020ENZ1 is Field-effect transistor MOSFET, with superiorfeatures of high-speed switching and low On-Resistance . [See More]

• Package Type: TO-247; TO-247
• Polarity: N-Channel

• Transistor Type: MOSFET
• Transistor Grade / Operating Range: Commercial

The RGS30TSX2HR is a 10 μs SCSOA guaranteed IGBT, suitable for Heater of Automotive. The RGS series delivers low conduction loss that contributes to reducing size and to improving efficiency of applications. This product complies AEC-Q101 qualification. [See More]

• Package Type: TO-247; TO-247N
• Transistor Grade / Operating Range: Commercial

• Transistor Type: IGBT

MOSFET N-CH 300V 46A TO247AC [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

TO-247-3 Bipolar Transistors - BJT ROHS [See More]

• Package Type: TO-247

• Transistor Type: Bipolar RF

75M 1200V 175C SIC FET [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

Polar ™ P-Channel MOSFETS are fabricated using our Polar technology platform, which significantly reduces the on-state resistance (RDSon) by 30% and gate charge (Qg) by 40% in comparison to legacy counterparts, resulting in lower conduction loss and providing excellent switching performance. [See More]

• Package Type: TO-247; TO-247I

• Polarity: P-Channel

SCT4018KR is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This is a 4th generation product that achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that... [See More]

• Package Type: TO-247; TO-247-4L
• Transistor Grade / Operating Range: Commercial

• Transistor Type: Power-MOSFET

SICFET N-CH 1200V 52A TO247-3 [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

400V 80W 40@5A,5V 12A NPN TO-247 Bipolar Transistors - BJT ROHS [See More]

• Package Type: TO-247
• Polarity: NPN

• Transistor Type: Bipolar RF

75M 1200V 175C SIC FET [See More]

• Package Type: TO-247; TO-247-4

• Transistor Type: MOSFET

The High Voltage series of N-Channel Standard MOSFETs are suitable for a wide variety of power switching systems, including high-voltage power supplies, capacitor discharge circuits, pulse circuits, and current regulators. Advantages: Easy to mount Space savings High power density International... [See More]

• Package Type: TO-247; TO-247ISO

• Polarity: N-Channel

SCT3105KR is an SiC MOSFET that features a trench gate structure optimized for electric vehicle charging stations, solar power inverters, and server power supplies requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to... [See More]

• Package Type: TO-247; TO-247-4L

• Transistor Grade / Operating Range: Commercial

MOSFET N-CH 600V 24A TO247 [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

TO-247-3 Bipolar Transistors - BJT ROHS [See More]

• Package Type: TO-247

• Transistor Type: Bipolar RF

SIC MOSFET N-CH 4A TO247-3 [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

As opposed to the enhancement-mode MOSFETs, these depletion-mode devices operate in a ‘normally-on ’ mode, requiring zero turn-on voltage at the gate terminal. With blocking voltages up to 1700V and low drain-to-source resistances they provide simplified control and reduced power... [See More]

• Package Type: TO-247; TO-247

• Polarity: N-Channel

MOSFET N-CH 500V 58A T-MAX [See More]

• Package Type: TO-247; TO-247-3 Variant

• Transistor Type: MOSFET

60V 90W 20@4A,4V 15A PNP TO-247AC-3 Bipolar Transistors - BJT ROHS [See More]

• Package Type: TO-247
• Polarity: PNP

• Transistor Type: Bipolar RF

3300V 50M TO-247-4 SIC MOSFET [See More]

• Package Type: TO-247; TO-247-4

• Transistor Type: MOSFET

The new 200V X4-Class Ultra Junction MOSFETs are available with 120A nominal current rating in TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) leading to an improvement in the Figure of Merit FOM RDS(on) x RthJC as compared to its predecessor X3-Class. [See More]

• Package Type: TO-247; TO-247

• Polarity: N-Channel

MOSFET N-CH 1000V 8A TO247 [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

TO-247-3 Bipolar Transistors - BJT ROHS [See More]

• Package Type: TO-247

• Transistor Type: Bipolar RF

SIC MOSFET N-CH 128A TO247-4 [See More]

• Package Type: TO-247; TO-247-4

• Transistor Type: MOSFET

The new 200V X4 Ultra Junction MOSFETs are designed with the latest Ultra Junction technology for high efficiency power applications. They are available in TO-247 and TO-268HV Packages. They offer lower RDS(on) simultaneously with reduced gate and output charges, which allows for more efficient... [See More]

• Package Type: TO-247; TO-247

• Polarity: N-Channel

MOSFET N-CH 1200V 12A TO247 [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

100V 90W 20@4A,4V 15A NPN TO-247AC-3 Bipolar Transistors - BJT ROHS [See More]

• Package Type: TO-247
• Polarity: NPN

• Transistor Type: Bipolar RF

750V 60M TO-247-4 G3R SIC MOSFET [See More]

• Package Type: TO-247; TO-247-4

• Transistor Type: MOSFET

The 600V X3-Class Ultra Junction MOSFET IXFH36N60X3 is available in 36A nominal current rating and TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg. They feature the lowest figures of merit (FOM) RDS(on)xQg and RDS(on)xRthJC. These... [See More]

• Package Type: TO-247; TO-247

• Polarity: N-Channel

MOSFET N-CH 1200V 14A TO247 [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

100V 125W 25A NPN TO-247AC-3 Bipolar Transistors - BJT ROHS [See More]

• Package Type: TO-247
• Polarity: NPN

• Transistor Type: Bipolar RF

TRANS SJT 1700V 16A TO247AB [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

The 600V X3-Class Ultra Junction MOSFET IXFH98N60X3 is available in 98A nominal current rating and TO-247 package. These Power MOSFETs feature significantly reduced channel resistance RDS(on) and gate charge Qg. They feature the lowest figures of merit (FOM) RDS(on)xQg and RDS(on)xRthJC. These... [See More]

• Package Type: TO-247; TO-247

• Polarity: N-Channel

RF MOSFET 150V TO247 [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

100V 125W 10@15A,4V 25A PNP TO-247-3 Bipolar Transistors - BJT ROHS [See More]

• Package Type: TO-247
• Polarity: PNP

• Transistor Type: Bipolar RF

GAN041-650WSB/SOT429/TO-247 [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

Designed using the proprietary thin-wafer XPT ™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their... [See More]

• Package Type: TO-247; TO-247HV

• Transistor Type: IGBT

RF MOSFET 125V TO247CS [See More]

• Package Type: TO-247; TO-247CS

• Transistor Type: MOSFET

TO-247-3 Darlington Transistors ROHS [See More]

• Package Type: TO-247

• Transistor Type: Darlington

SIC MOSFET 1200V 80M TO-247-3L [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

Designed using the proprietary thin-wafer XPT ™ technology and state-of-the-art IGBT process, these devices display qualities such as reduced thermal resistance, low tail current, low energy loss, and high-speed switching capability. Thanks to the positive temperature coefficient of their... [See More]

• Package Type: TO-247; TO-247 PLUS-HV

• Transistor Type: IGBT

SICFET N-CH 1200V 90A TO247-3 [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

100V 1000@4V,5A NPN 10A 125W TO-247AC-3 Darlington Transistors ROHS [See More]

• Package Type: TO-247
• Polarity: NPN

• Transistor Type: Darlington

SIC DISCRETE [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

Developed using the charge compensation principle and proprietary process technology, these devices exhibit low on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast... [See More]

• Package Type: TO-247; TO-247

• Polarity: N-Channel

SICFET N-CH 1700V 72A TO247-4 [See More]

• Package Type: TO-247; TO-247-4

• Transistor Type: MOSFET

100V 1000@4V,5A PNP 10A 125W TO-247 Darlington Transistors ROHS [See More]

• Package Type: TO-247
• Polarity: PNP

• Transistor Type: Darlington

SIC DISCRETE [See More]

• Package Type: TO-247; TO-247-4

• Transistor Type: MOSFET

Developed using the charge compensation principle and proprietary process technology, these new devices exhibit the lowest on-state resistances, along with low gate charges and superior dv/dt performance. Their avalanche capability also enhances the device ruggedness. In addition, thanks to the fast... [See More]

• Package Type: TO-247; TO-247-4L

• Polarity: N-Channel

SICFET N-CH 1700V 40A TO247-4 [See More]

• Package Type: TO-247; TO-247-4

• Transistor Type: MOSFET

375W 60A 650V FS(Field Stop) TO-247 IGBTs ROHS [See More]

• Package Type: TO-247

• Transistor Type: IGBT

SIC DISCRETE [See More]

• Package Type: TO-247; TO-247-4

• Transistor Type: MOSFET

The Littelfuse family of Punch Through (PT) IGBTs exhibit high gain, very fast switching and low conduction losses. They are optimized for higher speed applications up to 100kHz in UPS, Off-line Switching Power Supplies, and Induction Cooking. The G-series is available with or without an integrated... [See More]

• Package Type: TO-247; TO-247

• Transistor Type: IGBT

SICFET N-CH 650V 120A TO247-4L [See More]

• Package Type: TO-247; TO-247-4

• Transistor Type: MOSFET

469W 75A 650V FS(Field Stop) TO-247 IGBTs ROHS [See More]

• Package Type: TO-247

• Transistor Type: IGBT

SIC DISCRETE [See More]

• Package Type: TO-247; TO-247-4

• Transistor Type: MOSFET

The PolarP3 ™ HiPerFET ™ product family is the latest addition to the benchmark high-performance Polar-Series product line for our product portfolio between 300V, 500V and 600V. Its high Figure of Merit (FOM) being the multiplication of Qg and in RDS(on) provide an excellent alternative... [See More]

• Package Type: TO-247; TO-247 PLUS

• Polarity: N-Channel

SICFET N-CH 1200V 24A TO247 [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

40A 1.2kV TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247

• Transistor Type: IGBT

650V COOLMOS CFD7A SJ POWER DEVI [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

Trench Series - 650V XPT ™ (eXtreme-light Punch Through) IGBTs [See More]

• Package Type: TO-247; TO-247

• Transistor Type: IGBT

SICFET N-CH 900V 35A TO247-3 [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

333W 80A 1.2kV TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247

• Transistor Type: IGBT

TRENCH >=100V PG-TO247-3 [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

Utilizing XPT ™ thin-wafer technology and 4th generation (GenX4 ™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A... [See More]

• Package Type: TO-247; TO-247 PLUS

• Transistor Type: IGBT

MOSFET N-CH 650V 75A TO247 [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247

• Transistor Type: IGBT

MOSFET N-CH 500V 20A TO247-3 [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

Trench Series - 650V XPT ™ (eXtreme-light Punch Through) IGBTs [See More]

• Package Type: TO-247; TO-247 PLUS

• Transistor Type: IGBT

MOSFET N-CH 650V 75A TO247 [See More]

• Package Type: TO-247; TO-247-4

• Transistor Type: MOSFET

TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247

• Transistor Type: IGBT

TRENCH >=100V [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

Utilizing XPT ™ thin-wafer technology and 4th generation (GenX4 ™) Trench IGBT process, these up to 1200V devices helps to reduced gate driver requirements and conduction losses. It features reduced thermal resistance, low losses, high current densities and low gate charge requirement. A... [See More]

• Package Type: TO-247; TO-247 PLUS

• Transistor Type: IGBT

MOSFET N-CH 600V 77A TO247-3 [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247

• Transistor Type: IGBT

SIC MOSFET, 1200V 50MOHM, TO-247 [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

MOSFET N-CH 650V 76A TO247-4 [See More]

• Package Type: TO-247; TO-247-4

• Transistor Type: MOSFET

290W 80A 600V FS(Field Stop) TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247

• Transistor Type: IGBT

SIC MOSFET, 1200V 50MOHM, TO-247 [See More]

• Package Type: TO-247; TO-247-4

• Transistor Type: MOSFET

MOSFET N-CH 650V 24A TO247-3 [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

349W 80A 600V FS(Field Stop) TO-247AC-3 IGBTs ROHS [See More]

• Package Type: TO-247

• Transistor Type: IGBT

MOSFET 34A 650V X3 TO247 [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

MOSFET N-CH 600V 35A TO247-3 [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

268W 100A 650V FS(Field Stop) TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247

• Transistor Type: IGBT

MOSFET ULTRA JCT 600V 78A TO247 [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

SIC MOSFET N-CH 61A TO247-4 [See More]

• Package Type: TO-247; TO-247-4

• Transistor Type: MOSFET

TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247

• Transistor Type: IGBT

MOSFET N-CH 2200V 600MA TO247HV [See More]

• Package Type: TO-247; TO-247-3 Variant

• Transistor Type: MOSFET

SIC MOSFET N-CH 41A TO247-3 [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

600W 120A 600V FS(Field Stop) TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247

• Transistor Type: IGBT

MOSFET N-CH 75V 140A TO247 [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

TRANS SJT 1700V 4A TO247AB [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET

455W 150A 650V FS(Field Stop) TO-247-3 IGBTs ROHS [See More]

• Package Type: TO-247

• Transistor Type: IGBT

MOSFET N-CH 200V 220A X4 TO-247 [See More]

• Package Type: TO-247; TO-247-3

• Transistor Type: MOSFET