Industrial Transistors
Last Updated: February 12, 2025
Description
Industrial transistors are semiconductor devices that serve as fundamental components in electronic circuits. They function primarily as switches and amplifiers, controlling the flow of electrical current in a circuit. By manipulating the current between two terminals, transistors can regulate the output of electrical signals, making them essential for various electronic applications.
Working Principle
Transistors operate by using a small input current or voltage to control a larger output current. They consist of three layers of semiconductor material, known as the emitter, base, and collector. In bipolar junction transistors (BJTs), the operation involves the injection and collection of minority carriers through p-n junctions. Field-effect transistors (FETs), on the other hand, are majority carrier devices and operate by controlling the flow of carriers through an electric field. This ability to control current flow makes transistors invaluable for amplification and switching, enabling the development of complex electronic systems.
Applications
Transistors are used in a wide range of industrial applications. They are crucial in audio amplifiers, where they enhance the fidelity and power of audio signals. In digital electronics, transistors form the building blocks of microprocessors and memory chips, enabling the processing of binary information. In power electronics, transistors control large current flows, which is essential for variable-speed motor drives and electric vehicle powertrains. Additionally, transistors are used in radio frequency (RF) devices for wireless communications and in switching regulators for efficient power conversion in electronic devices.
Advantages over other Transistors
Transistors offer several advantages over other electronic components. They are small and lightweight, which facilitates the miniaturization of electronic devices. They do not require a warm-up period and consume less power, leading to higher efficiency and less heat dissipation. Transistors also have a long lifespan, are highly reliable, and are physically rugged, making them suitable for a wide range of industrial applications.
Limitations
Despite their advantages, transistors have limitations. They can be sensitive to temperature changes, which may affect their performance. Additionally, transistors can be susceptible to damage from electrical overloads or static discharge. The complexity of integrating transistors into circuits can also pose challenges in design and manufacturing.
Considerations
When selecting transistors for industrial applications, several factors should be considered. Initial costs can vary depending on the type and specifications of the transistor. Operating expenses are generally low due to their high efficiency and low power consumption. Transistors are durable and reliable, but their performance can degrade over time, necessitating periodic maintenance and replacement. Accurate selection and integration into circuits are crucial to ensure optimal performance and longevity.
from Nexperia B.V.
NPN low VCEsat transistor in a plastic SOT457 (SC-74) Surface Mounted Device (SMD) plastic package. Features and benefits. SOT457 package. Low collector-emitter saturation voltage VCEsat. High collector current capability IC and ICM. High efficiency, leading to less heat generation. AEC-Q101... [See More]
- Transistor Grade / Operating Range: Industrial; Automotive
- Package Type: SOT457
- Polarity: NPN
from Infineon Technologies AG
IHV 4500 V, 1200 A 130 mm Diode Module with EC3 - Diode, predestined to be combined with IGBT products (e.g. FZ1200R45KL3_B5 or FZ800R45KL3_B5). Summary of Features. High DC Stability. High Dynamic Robustness. High surge current capability. 10.2 kV AC Isolation. AlSiC Base Plate for increased... [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: A-IHV130
- Transistor Type: IGBT
from Fuji Electric Corp. of America
Fuji Electric ’s Discrete IGBTs are used in applications such as UPS, power conditioning subsystems, communication equipment, servers, and EV chargers. By applying the technology we cultivated in our latest 7th generation IGBT module, the new “XS ” series has been able to... [See More]
- Transistor Grade / Operating Range: Commercial; Industrial; Automotive
- Package Type: TO-247-P2
- Transistor Type: IGBT
from Nexperia B.V.
NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS9110T. Features and benefits. Low collector-emitter saturation voltage VCEsat. High collector current capability: IC and ICM. Applications. Major application segments. Automotive... [See More]
- Transistor Grade / Operating Range: Industrial; Automotive
- Package Type: SOT23; SOT23
- Polarity: NPN
from Infineon Technologies AG
6500 V IHV, 500 A 130mm Diode IGBT module with EC3 - Diode - The best solution for your traction and industry applications. Predestined to be combined with IGBT3 products. Summary of Features. AlSiC Base Plate for increased Thermal Cycling Capability. Extended Storage Temperature down to T(stg) =... [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: A-IHV130
- Transistor Type: IGBT
from Nexperia B.V.
NPN low VCEsat transistor in a SOT89 (SC-62/ TO-243) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS9110X. Features and benefits. SOT89 package. Low collector-emitter saturation voltage VCEsat. High collector current capability: IC and ICM. High efficiency leading to less... [See More]
- Transistor Grade / Operating Range: Industrial; Automotive
- Package Type: SOT89; SOT89
- Polarity: NPN
from Infineon Technologies AG
PrimePACK ™3 1700 V , 1000 A chopper IGBT module with TRENCHSTOP ™ IGBT4 and NTC. Also available with pre-applied Thermal Interface Material. Summary of Features. Extended Operation Temperature Tvj op. High DC Stability. High Current Density. Low Switching Losses. Tvj op== 150 °C. [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: AG-PRIME3
- Transistor Type: IGBT
from Nexperia B.V.
NPN Resistor-Equipped Transistor (RET) in a small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114YM. Features and benefits. 100 mA output current capability. Built-in bias resistors. Simplifies circuit design. Reduces component count. Reduces pick and place... [See More]
- Transistor Grade / Operating Range: Industrial; Automotive
- Package Type: SOT883
- Polarity: NPN
from Infineon Technologies AG
EasyPACK ™ 650 V, 100 A booster IGBT module with TRENCHSTOP ™ 5 H5, CoolSiC ™ Schottky diode, PressFIT contact technology and pre-applied Thermal Interface Material. Summary of Features. Increased blocking voltage capability up to 650V. Low switching losses. Low inductive design. [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: AG-EASY1B
- Transistor Type: IGBT
from Nexperia B.V.
NPN Resistor-Equipped Transistor (RET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package. PNP complement: PDTA114YU. Features and benefits. 100 mA output current capability. Built-in bias resistors. Simplifies circuit design. Reduces component count. Reduces pick and place... [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: SOT323; SOT323
- Polarity: NPN
from Infineon Technologies AG
EasyPACK ™ 650 V, 100 A booster IGBT module with TRENCHSTOP ™ 5 H5, CoolSiC ™ Schottky diode, solder pins contact technology and pre-applied Thermal Interface Material. Summary of Features. Increased blocking voltage capability up to 650 V. Low switching losses. Low inductive... [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: AG-EASY1B
- Transistor Type: IGBT
from Nexperia B.V.
NPN/NPN Resistor-Equipped double Transistor (RET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. PNP/PNP complement: PUMB9. NPN/PNP complement: PUMD9. Features and benefits. 100 mA output current capability. Built-in bias resistors. Simplifies circuit design. Reduces... [See More]
- Transistor Grade / Operating Range: Industrial; Automotive
- Package Type: SOT363
- Polarity: NPN
from Infineon Technologies AG
EconoPACK ™ 4 650 V three phase chopper IGBT module with Trench/Fieldstop IGBT4, Emitter Controlled 4 diode and NTC. Summary of Features. Increased blocking voltage capability to 650 V. Extended Operation Temperature T(vj op). T(vj op) = 150 °C. VCE(sat) with positive Temperature... [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: AG-ECONO4
- Transistor Type: IGBT
from Nexperia B.V.
NGB15T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third - generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. NGB15T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit... [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: SOT404B-1
from Infineon Technologies AG
EasyPACK ™ 2B 1200 V, 200 A 3-level phase leg IGBT module with active "Neutral Point Clamp 2", NTC, High Speed IGBT H3 and PressFIT Contact Technology. Summary of Features. Low inductive design. Low switching losses. Low VCEsat. Al2O3 substrate with low thermal resistance. Compact design. [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: AG-EASY2B
- Transistor Type: IGBT
from Nexperia B.V.
NGFP15T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third - generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. NGFP15T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit... [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: SOT186B-1
from Infineon Technologies AG
EasyPACK ™ 2B 650 V 225 A 3-level phase leg IGBT module with High Speed IGBT H3, NTC, active "Neutral Point Clamp 2", PressFIT Contact Technology and pre-applied Thermal Interface Material. Summary of Features. Low inductive design. Low Switching Losses. Low VCE(sat). Al 2O3 Substrate with Low... [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: AG-EASY2B
- Transistor Type: IGBT
from Nexperia B.V.
The NGW30T65M3DFP is a robust Insulated-Gate Bipolar Transistor (IGBT) featuring third-generation technology. It combines carrier stored trench-gate and field-stop (FS) structures. The NGW30T65M3DFP is rated to 175 °C with optimized IGBT turn-off losses, and has a short circuit withstand time... [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: SOT429-5
from Infineon Technologies AG
EasyPACK ™ 3B 950 V, 400 A ANPC (active neutral point clamping) IGBT module with TRENCHSTOP ™ IGBT7, Emitter Controlled diode, NTC and PressFIT contact technology. Together with FS3L200R10W3S7F_B11, it provides a total solution for 1500 V 3-phase PV string inverters. Summary of Features. [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: AG-EASY3B
- Transistor Type: IGBT
from Nexperia B.V.
The GAN039-650NBB is a 650 V, 33 m Ω Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia ’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: SOT8000
from Infineon Technologies AG
EasyPACK ™ 4B 950 V, 600 A 3-Level IGBT module with TRENCHSTOP ™ IGBT7 and 1200 V CoolSiC ™ Schottky Diode. Summary of Features. EasyPACK ™ 4B with three substrates. ANPC topology with four fast switches. 950 V IGBT7 and 1200 V SiC diode. Optimized stray inductance. Improved... [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: AG-EASY4B
- Transistor Type: IGBT
from Nexperia B.V.
The GAN039-650NTB is a 650 V, 33 m Ω Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia ’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and... [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: SOT8005
from Infineon Technologies AG
EconoPACK ™ 3 1700 V, 100 A fourpack IGBT module with Trench/Fieldstop IGBT 4, emitter controlled diode, input rectifier and NTC. Summary of Features. Low VCEsat with positive temperature coefficient. Established Econo module concept. Isolated base plate. Solder contact technology. [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: AG-ECONO3B
- Transistor Type: IGBT
from Nexperia B.V.
The GAN041-650WSB is a 650 V, 35 m Ω Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia ’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance. Features... [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: SOT429-3
from Infineon Technologies AG
EconoPACK ™ 3 1700 V, 200 A fourpack IGBT module with Trench/Feldstopp IGBT4, Emitter Controlled diode and NTC. Summary of Features. Low VCEsat with positive temperature coefficient. Established Econo module concept. Isolated base plate. Solder contact technology. RoHS-compliant modules. [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: AG-ECONO3B
- Transistor Type: IGBT
from Nexperia B.V.
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Logic-level compatible. Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0... [See More]
- Transistor Grade / Operating Range: Industrial; Automotive
- Polarity: N-Channel
- Transistor Type: MOSFET
- Package Type: SOT1215
from Infineon Technologies AG
IHV B 3300 V, 1000 A 190mm chopper IGBT Module with IGBT3 - The best solution for your medium voltage and drives applications. Summary of Features. High DC Stability. High Short Circuit Capability. Self Limiting short Circuit Current. Low switching Losses. Tvj op = 150 °C. Low VCEsat with... [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: AG-IHVB190
- Transistor Type: IGBT
from Nexperia B.V.
The NXF6505A/B-Q100 is a specialized push-pull transformer driver that is designed for isolated power supplies in small form factors. This driver is capable of driving low-profile, center-tapped transformers from a 2.25 V to 5.5 V DC power supply, while achieving ultra - low noise... [See More]
- Transistor Grade / Operating Range: Industrial; Automotive
- Package Type: SOT8061-1
from Infineon Technologies AG
1700V IHMB 130mm chopper IGBT Module with IGBT4, AlSiC base-plate and enlarged diode - The best solution for your traction and industry applications. Summary of Features. T(vjop) = 150 °C. High reliability and robust module construction. Enlarged Diode for regenerative operation. UL recognised. [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: AG-IHMB130
- Transistor Type: IGBT
from Nexperia B.V.
Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits. High peak drain current IDM. Copper clip and flexible Leads. High operating junction temperature Tj = 175 °C. Superior reliability. Low body diode reverse recovery... [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: SOT1205
- Transistor Type: MOSFET
from Infineon Technologies AG
1700V IHMB 190mm chopper IGBT Module with IGBT4, AlSiC base-plate and enlarged diode - The best solution for your traction and industry applications. Summary of Features. Extended Operation Temperature T(vj op). Low V(CEsat). 4kV AC 1min Insulation. AlSiC Base Plate for increasing Thermal Cycling... [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: AG-IHMB190
- Transistor Type: IGBT
from Nexperia B.V.
200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package, using advanced TrenchMOS Superjunction technology with optimization to provide improved EMC performance (up to 6 dB). This product has been designed and qualified for high performance power switching... [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: SOT669
- Transistor Type: MOSFET
from Infineon Technologies AG
62 mm 1700 V, 300 A chopper IGBT4 module with pre-applied Thermal Interface Material. Summary of Features. designed for frequency controlled drives. UL/CSA Certification with UL1557 E83336. Overload capability up to 175 °C max. Optimized switching behaviour. RoHS compliant. Benefits. [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: AG-62MMHB
- Transistor Type: IGBT
from Nexperia B.V.
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits. High noise immunity due to high gate... [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: SOT404
- Polarity: N-Channel
from Infineon Technologies AG
6500 V IHV, 500 A 190 mm chopper IGBT Module with IGBT3 - The best solution for your medium voltage and drives applications. Summary of Features. Low VCE(sat). AlSiC Base Plate for increased Thermal Cycling Capability. Extended Storage Temperature down to T(stg) = -55 °C. Package with CTI >... [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: A-IHV190
- Transistor Type: IGBT
from Nexperia B.V.
NPN Darlington transistor in an SOT223 Surface-Mounted Device (SMD) plastic package. PNP complement: BSP61. Features and benefits. High current of 1 A. Low voltage of 60 V. Integrated diode and resistor. Applications. Industrial high gain amplification [See More]
- Transistor Grade / Operating Range: Industrial
- Polarity: NPN
- Transistor Type: Darlington
- Package Type: SOT223; SOT223
from Infineon Technologies AG
PrimePACK ™2 1700 V, 650 A chopper IGBT module with IGBT4 and NTC. Summary of Features. Extended Operation Temperature Tvj op. High DC Stability. High Current Density. Low Switching Losses. Tvj op = 150 °C. Low VCE(sat). Package with CTI > 400. High Creepage and Clearance Distances. [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: AG-PRIME2
- Transistor Type: IGBT
from Nexperia B.V.
PNP Resistor-Equipped Transistor (RET) family in Surface-Mounted Device (SMD) plastic packages. Features and benefits. 100 mA output current capability. Built-in bias resistors. Simplifies circuit design. Reduces component count. Reduces pick and place costs. AEC-Q101 qualified. Applications. [See More]
- Transistor Grade / Operating Range: Industrial; Automotive
- Package Type: SOT883B
- Polarity: PNP
from Infineon Technologies AG
4500V IHV, 800 A 190mm chopper IGBT Module with Trench/Fieldstop IGBT3, Emitter Controlled 3 diode and isolated AlSiC Base Plate - The best solution for your traction and industry applications. Summary of Features. High DC Stability. High Short Circuit Capability, Self Limiting Short Circuit... [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: A-IHV190
- Transistor Type: IGBT
from Infineon Technologies AG
PrimePACK ™3+ 1200 V, 1500 A dual IGBT module with TRENCHSTOPTM IGBT5 and .XT interconnection technology, Trench/Fieldstop IGBT5, Emitter Controlled 5 diode and NTC. Also available with pre-applied Thermal Interface Material. Summary of Features. Extended operating temperature (T vjop = 175... [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: AG-PRIME3+
- Transistor Type: IGBT
from Infineon Technologies AG
EconoDUAL ™ 3 1700 V, 225 A half-bridge dual IGBT module with low sat and fast TRENCHSTOP ™ IGBT4 and Emitter Controlled 3 diode. Also available as variation with PressFIT mounting or with Thermal Interface Material. Summary of Features. Easy separation of DC and AC. Optimized thermal... [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: AG-ECONOD
- Transistor Type: IGBT
from Infineon Technologies AG
EconoDUAL ™ 3 1700 V, 225 A dual TRENCHSTOP ™ IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology. Summary of Features. Low VCE,sat. Tvj op = 175 °C overload. Optimized switching losses. Enhanced controllability of dv/dt. Improved diode softness and... [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: AG-ECONOD
- Transistor Type: IGBT
from Infineon Technologies AG
XHP ™3 6500 V, 225 A dual IGBT module with Trench/Fieldstopp IGBT3 and Emitter Controlled 3 diode. Summary of Features. Standardized XHP ™ 3 housing. 6.5 kV. 10.4 kV isolation. CTI 600. Fire and smoke classification according to EN45545 R22, R23, R24, HL2. AlSiC baseplate and AlN... [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: AG-XHP3K65
- Transistor Type: IGBT
from Infineon Technologies AG
EconoDUAL ™ 3 650 V, 300 A dual IGBT module with TRENCHSTOP ™ IGBT4, Emitter Controlled Diode, NTC and PressFIT Contact Technology. Summary of Features. Increased blocking voltage capability to 650V. Increased DC link Voltage. High Short Circuit Capability. Self Limiting Short Circuit... [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: AG-ECONOD
- Transistor Type: IGBT
from Infineon Technologies AG
EconoDUAL ™ 3 1200 V, 750 A dual TRENCHSTOP ™ IGBT7 module with emitter controlled 7 diode, NTC and PressFIT contact technology. Summary of Features. Highest power density. Tvj op = 175 °C overload. Improved terminals. Optimized creepage distance for 1500 V PV applications. PressFIT... [See More]
- Transistor Grade / Operating Range: Industrial
- Package Type: AG-ECONOD
- Transistor Type: IGBT
from Broadcom Inc.
Avago Technologies has combined its industry leading E-PHEMT technology with a revolutionary chip scale package. The VMMK-1218 can produce an LNA with high dynamic range, high gain and low noise figure that generates off of a single position DC power supply. [See More]
- Transistor Grade / Operating Range: Commercial; Industrial; Military
- Transistor Technology / Material: GaAs
- Transistor Type: PHEMT; E-pHEMT
- Package Type: Sub-miniature 0402
from Wolfspeed
Wolfspeed ’s CGHV38375F is a packaged, 400 W HPA matched to 50 ohms at both input and output ports. The CGHV38375F operates from 2.75 – 3.75 GHz providing coverage over the entire S-band radar band. This high-power amplifier provides >10 dB of large signal gain and 40% power-added... [See More]
- Transistor Grade / Operating Range: Commercial; Industrial; Military
- Transistor Technology / Material: 2.75 - 3.75, 400W GaN on SiC HPA
from Universal Semiconductor, Inc.
Self-Aligning Silicon Gate Sturcture. Low Transfer Capacitance - 0.2 pF typ. Low Input Capacitance - 2.4 pF typ. Low Output Capacitance - 1.3 pF typ. Low Gate Threadhold Voltage - 0.6V typ. [See More]
- Transistor Grade / Operating Range: Commercial; Industrial
- Polarity: N-Channel
- Transistor Type: MOSFET; Power-MOSFET
- Package Type: TO-72, Gold-Backed Chips in Waffle Pack
from Toshiba America, Inc.
Toshiba offers an extensive portfolio of low-VDSS and mid/high-VDSS MOSFETs in various circuit configurations and packages, featuring high speed, high performance, low loss, low on-resistance, small packaging, etc. Toshiba has decades of experience in the development and manufacturing of MOSFETs. [See More]
- Transistor Grade / Operating Range: Industrial; Automotive
- Transistor Type: MOSFET; MOSFET RF
from Broadcom Inc.
Avago Technologies has combined its industry leading E-pHEMT technology with a revolutionary chip scale package. This product is easy to use since it requires only positive DC voltages for bias and no matching coefficients are required for impedance matching to 50 Ω systems. [See More]
- Transistor Grade / Operating Range: Commercial; Industrial; Military
- Transistor Technology / Material: GaAs
- Transistor Type: PHEMT; E-pHEMT
- Package Type: Sub-miniature 0402
from Broadcom Inc.
Avago Technologies has combined its industry leadingE-pHEMT technology with a revolutionary chip scale package. This product is easy to use since it requires only positive DC voltages for bias and no matching coefficients are required for impedance matching to 50 Ω systems. [See More]
- Transistor Grade / Operating Range: Commercial; Industrial; Military
- Transistor Technology / Material: GaAs
- Transistor Type: PHEMT; E-pHEMT
- Package Type: Sub-miniature 0402
from Broadcom Inc.
Microcurrent device offering good RF performance at 1mA-5mA. The AT-305XX is housed in two packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1.1dB, Gain=16dB at 3V, 1mA; P1dB= 7dBm at 3V, 5mA (all at 900 MHz) [See More]
- Transistor Grade / Operating Range: Industrial
- Polarity: NPN; NPN
- Transistor Type: Bipolar RF
- Transistor Technology / Material: Silicon
from Broadcom Inc.
Microcurrent device offering good RF performance at 1mA-5mA. The AT-305XX is housed in two packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1.1dB, Gain=16dB at 3V, 1mA; P1dB= 7dBm at 3V, 5mA (all at 900 MHz) [See More]
- Transistor Grade / Operating Range: Industrial
- Polarity: NPN; NPN
- Transistor Type: Bipolar RF
- Transistor Technology / Material: Silicon