Bipolar RF Transistors Transistors
from Infineon Technologies AG
NPN Silicon Digital Transistor. Summary of Features. Switching in circuit, inverter, interface circuit, drive circuit. Built in bias resistor (R1 = 10 k Ω, R2 = 10 k Ω). BCR133S: Two internally isolated transistors with good matching in one multichip package. BCR133S: For orientation in... [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT23; SOT23
- Polarity: NPN; NPN (Single)
from Win Source Electronics
Win Source Part Number: 1005637-SG2803L-883B. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tray. Standard Package: 50. Mounting: SMD (SMT). Voltage - Collector Emitter Breakdown (Max): 50V. Current - Collector (Ic) (Max): 500mA. Transistor Type: 8 NPN... [See More]
- Transistor Type: BJT; Bipolar RF; Darlington
- Package Type: SOT3
- Polarity: NPN
from ODG (Origin Data Global)
RF TRANS NPN 65V 1GHZ 55KT [See More]
- Transistor Type: Bipolar RF
- Package Type: 55KT
- Polarity: NPN; NPN
from Rochester Electronics
Small Signal Bipolar Transistor [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SSFP3
from Infineon Technologies AG
Home // Products // Small Signal Transistors & Diodes // Bipolar Transistor // Digital Transistor // BCR135W [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT323; SOT323
- Polarity: NPN; NPN (Single)
from Win Source Electronics
Win Source Part Number: 1006864-SBC847BPDW1T3G. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 10,000. Mounting: SMD (SMT). Power - Max: 380mW. Voltage - Collector Emitter Breakdown (Max):... [See More]
- Transistor Type: BJT; Bipolar RF
- Package Type: SOT3
- Polarity: NPN; PNP
from ODG (Origin Data Global)
RF TRANS NPN 65V 55SM [See More]
- Transistor Type: Bipolar RF
- Package Type: 55SM
- Polarity: NPN; NPN
from Rochester Electronics
Bipolar Transistor, 15V, 1A, Low VCE(sat) NPN Single MCPH3 [See More]
- Transistor Type: Bipolar RF
- Package Type: SC 70FL / MCPH3
- Polarity: NPN
from Infineon Technologies AG
NPN Silicon Switching Transistor. Summary of Features. Low collector-emitter saturation voltage. Complementary type: SMBT2907A / MMBT2907A (PNP). Pb-free (RoHS compliant) package. Qualified according AEC Q101 [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT23; SOT23
- Polarity: NPN; NPN (Single)
from Win Source Electronics
Win Source Part Number: 1008883-SG2813J-883B. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tray. Standard Package: 21. Voltage - Collector Emitter Breakdown (Max): 50V. Current - Collector (Ic) (Max): 600mA. Transistor Type: 8 NPN Darlington. Vce... [See More]
- Transistor Type: BJT; Bipolar RF; Darlington
- Package Type: SOT3
- Polarity: NPN
from ODG (Origin Data Global)
RF TRANS NPN 10V 1.5GHZ 3CP [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
- Polarity: NPN; NPN
from Rochester Electronics
RF Small Signal Bipolar Transistor [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SC-60
from Infineon Technologies AG
NPN / PNP Silicon Switching Transistor Array. Summary of Features. High current gain. Low collector-emitter saturation voltage. Two (galvanic) internal isolated NPN / PNP transistor in one package. Pb-free (RoHS compliant) package. Qualified according AEC Q101 [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT363
- Polarity: NPN; PNP; NPN/PNP (Dual)
from Win Source Electronics
Win Source Part Number: 1010559-PBSS4160PANP,115. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: *. Package: Bulk. Standard Package: 1. Fake Threat In the Open Market: 80 pct. MSL Level: 1 (Unlimited). REACH Status: REACH Unaffected. Mfr: NXP... [See More]
- Transistor Type: BJT; Bipolar RF
- Package Type: SOT3
from ODG (Origin Data Global)
RF TRANS NPN 42V 2.3GHZ 55BT [See More]
- Transistor Type: Bipolar RF
- Package Type: 55BT
- Polarity: NPN; NPN
from Rochester Electronics
RF Small Signal Bipolar Transistor, 0.05A, Very High Frequency Band, NPN, TO-92 [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: TO-92; TO-92
- Polarity: NPN
from Infineon Technologies AG
NPN / PNP Silicon Switching Transistor Array. Summary of Features. High current gain. Low collector-emitter saturation voltage. Two (galvanic) internal isolated NPN / PNP transistor in one package. Pb-free (RoHS compliant) package. Qualified according AEC Q101 [See More]
- Transistor Type: Bipolar RF
- Package Type: SC74
- Polarity: NPN; PNP; NPN/PNP (Dual)
from Win Source Electronics
Win Source Part Number: 1013476-SG2024J-883B. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tray. Standard Package: 1. Voltage - Collector Emitter Breakdown (Max): 95V. Current - Collector (Ic) (Max): 500mA. Transistor Type: 7 NPN Darlington. Vce... [See More]
- Transistor Type: BJT; Bipolar RF; Darlington
- Package Type: SOT3
- Polarity: NPN
from ODG (Origin Data Global)
RF TRANS NPN 15V 1.9GHZ TO72 [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-206AF, TO-72-4 Metal Can
- Polarity: NPN; NPN
from Rochester Electronics
4.0 A, 60 V PNP Bipolar Power Transistor [See More]
- Transistor Type: Bipolar RF; Power-MOSFET
- Package Type: TO-225
- Polarity: PNP
from Infineon Technologies AG
NPN/PNP Silicon AF Transistor Arrays. Summary of Features. High current gain. Low collector-emitter saturation voltage. Two (galvanic) internal isolated NPN/PNP transistor in one package. Pb-free (RoHS compliant) package. Qualified according AEC Q101. Potential Applications. For AF input stage and... [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT363
- Polarity: NPN; PNP; NPN/PNP (Dual)
from Win Source Electronics
Win Source Part Number: 1019168-SG2003L-883B. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tray. Standard Package: 50. Mounting: SMD (SMT). Voltage - Collector Emitter Breakdown (Max): 50V. Current - Collector (Ic) (Max): 500mA. Transistor Type: 7 NPN... [See More]
- Transistor Type: BJT; Bipolar RF; Darlington
- Package Type: SOT3
- Polarity: NPN
from ODG (Origin Data Global)
SMALL-SIGNAL BJT [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-205AA, TO-5-3 Metal Can
- Polarity: PNP; PNP
from Rochester Electronics
Small Signal Bipolar Transistor, NPN [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SIP3
- Polarity: NPN
from Infineon Technologies AG
NPN Silicon AF Transistors. Summary of Features. High current gain. Low collector-emitter saturation voltage. Low noise between 30 Hz and 15 kHz. Complementary types: BC857...-BC860...(PNP). Pb-free (RoHS compliant) package. Qualified according AEC Q1011. BC847BL3 is not qualified according AEC... [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT323; SOT323
- Polarity: NPN; NPN (Single)
from Win Source Electronics
Win Source Part Number: 1021519-SG2823L-883B. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tray. Standard Package: 50. Mounting: SMD (SMT). Voltage - Collector Emitter Breakdown (Max): 95V. Current - Collector (Ic) (Max): 500mA. Transistor Type: 8 NPN... [See More]
- Transistor Type: BJT; Bipolar RF; Darlington
- Package Type: SOT3
- Polarity: NPN
from ODG (Origin Data Global)
SMALL-SIGNAL BJT [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-206AA, TO-18-3 Metal Can
- Polarity: PNP; PNP
from Rochester Electronics
25 A, 80 V NPN Bipolar Power Transistor [See More]
- Transistor Type: Bipolar RF; Power-MOSFET
- Package Type: TO-3; TO-204 (TO-3)
- Polarity: NPN
from Infineon Technologies AG
HiRel Microwave Transistor. Summary of Features. Hermetically sealed microwave package. fT= 8 GHz. F = 2.2 dB at 2 GHz. Type Variant No. 03. ESA Space Qualified ESSCC Detail Spec. No.: 5611/006/03 B. Potential Applications. For low noise, high-gain broadband amplifiers at collector currents from 0,5... [See More]
- Transistor Type: Bipolar RF
- Package Type: Micro-X
from Win Source Electronics
Win Source Part Number: 1024225-ULQ2001A. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tube. Standard Package: 2,000. Voltage - Collector Emitter Breakdown (Max): 50V. Current - Collector (Ic) (Max): 500mA. Transistor Type: 7 NPN Darlington. Vce... [See More]
- Transistor Type: BJT; Bipolar RF; Darlington
- Package Type: SOT3
- Polarity: NPN
from ODG (Origin Data Global)
SILICON TRANSISTOR NPN TO-39 [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-39; TO-205AD, TO-39-3 Metal Can
- Polarity: NPN; NPN
from Rochester Electronics
Power Bipolar Transistor, 25A, 120V, PNP, TO-204AA, Metal, 2 Pin [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: TO-204AA
- Polarity: PNP
from Infineon Technologies AG
HiRel Microwave Transistor. Summary of Features. Hermetically sealed microwave package. fT= 8 GHz. F = 2.2 dB at 2 GHz. Potential Applications. For low noise, high-gain broadband amplifiers at collector currents from 0,5 mA to 12 mA. Quality level for Engineering Models. Applications. Space... [See More]
- Transistor Type: Bipolar RF
- Package Type: Micro-X
from Win Source Electronics
Win Source Part Number: 1028180-KSC5200OTU. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Bulk. Standard Package: 1. Power - Max: 130W. Voltage - Collector Emitter Breakdown (Max): 230V. Current - Collector (Ic) (Max): 13A. Transistor Type: NPN. Vce... [See More]
- Transistor Type: BJT; Bipolar RF
- Package Type: SOT3
- Polarity: NPN
from ODG (Origin Data Global)
RF TRANS NPN 30V 400MHZ TO39 [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-39; TO-205AD, TO-39-3 Metal Can
- Polarity: NPN; NPN
from Rochester Electronics
Power Bipolar Transistor, 15A, 60V, PNP [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: TO-220; TO-220AB
- Polarity: PNP
from Infineon Technologies AG
PNP Silicon AF Transistor Array. Summary of Features. High current gain. Low collector-emitter saturation voltage. Two (galvanic) internal isolated Transistor with good matching in on package. Pb-free (RoHS compliant) package. Qualified according AEC Q101. Potential Applications. For AF input stages... [See More]
- Transistor Type: Bipolar RF
- Package Type: SC74
- Polarity: PNP; PNP (Dual)
from Win Source Electronics
Win Source Part Number: 1033310-SG2023L-883B. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tray. Standard Package: 50. Mounting: SMD (SMT). Voltage - Collector Emitter Breakdown (Max): 95V. Current - Collector (Ic) (Max): 500mA. Transistor Type: 7 NPN... [See More]
- Transistor Type: BJT; Bipolar RF; Darlington
- Package Type: SOT3
- Polarity: NPN
from ODG (Origin Data Global)
RF TRANS PNP 30V 30MA TO72 [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-72-3 Metal Can
- Polarity: PNP; PNP
from Rochester Electronics
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SOT323
- Polarity: PNP
from Win Source Electronics
Win Source Part Number: 1048409-BC847BPN,125. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 300mW. Voltage - Collector Emitter Breakdown (Max):... [See More]
- Transistor Type: BJT; Bipolar RF
- Package Type: SOT3
- Polarity: NPN; PNP
from ODG (Origin Data Global)
PNP SIL RF TO39 [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-39; TO-205AD, TO-39-3 Metal Can
- Polarity: PNP; PNP
from Rochester Electronics
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SC-75
- Polarity: PNP
from Win Source Electronics
Win Source Part Number: 1048413-BC847QAPNZ. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 5,000. Mounting: SMD (SMT). Power - Max: 350mW. Voltage - Collector Emitter Breakdown (Max): 45V. [See More]
- Transistor Type: BJT; Bipolar RF
- Package Type: SOT3
- Polarity: NPN; PNP
from ODG (Origin Data Global)
RF TRANS NPN 15V 900MHZ TO92 [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-92; TO-226-3, TO-92-3 (TO-226AA)
- Polarity: NPN; NPN
from Rochester Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SOT883
- Polarity: PNP
from Win Source Electronics
Win Source Part Number: 1048426-BC856SF. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel (TR). Standard Package: 10,000. Mounting: SMD (SMT). Power - Max: 400mW. Voltage - Collector Emitter Breakdown (Max):... [See More]
- Transistor Type: BJT; Bipolar RF
- Package Type: SOT3
- Polarity: PNP
from ODG (Origin Data Global)
RF TRANS NPN 15V TO92-3 [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-92; TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Polarity: NPN; NPN
from Rochester Electronics
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SOT23
- Polarity: PNP
from Win Source Electronics
Win Source Part Number: 1079528-MMDT2227A_R1_00001. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 225mW, 200mW. Voltage - Collector Emitter Breakdown (Max): 40V, 60V. Current -... [See More]
- Transistor Type: BJT; Bipolar RF
- Package Type: SOT3
- Polarity: NPN; PNP; Complementary
from ODG (Origin Data Global)
RF TRANS PNP 20V 300MHZ SSMINI3 [See More]
- Transistor Type: Bipolar RF
- Package Type: SC-89, SOT-490
- Polarity: PNP; PNP
from Rochester Electronics
Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-236AB [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SOT23
- Polarity: PNP
from Win Source Electronics
Win Source Part Number: 1079529-MMDT2907AQ-7-F. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel (TR). Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 200mW. Voltage - Collector Emitter Breakdown (Max): 60V. Current - Collector... [See More]
- Transistor Type: BJT; Bipolar RF
- Package Type: SOT3
- Polarity: PNP
from ODG (Origin Data Global)
PNP TRANSISTOR [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
- Polarity: PNP; PNP
from Rochester Electronics
Small Signal Bipolar Transistor, 0.15A, 50V, NPN, SC-70 [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SOT323; SC-70 (SOT-323)
- Polarity: NPN
from Win Source Electronics
Win Source Part Number: 1085643-PMBT3906YS,115. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel (TR). Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 350mW. Voltage - Collector Emitter Breakdown... [See More]
- Transistor Type: BJT; Bipolar RF
- Package Type: SOT3
- Polarity: PNP
from ODG (Origin Data Global)
RF TRANS PNP 12V 8.5GHZ SOT23 [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
- Polarity: PNP; PNP
from Rochester Electronics
Power Bipolar Transistor, 1A I(C), 1-Element, NPN [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: SOT89
- Polarity: NPN
from Win Source Electronics
Win Source Part Number: 1086362-PUMT1,115. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 300mW. Voltage - Collector Emitter Breakdown (Max): 40V. Current - Collector (Ic) (Max):... [See More]
- Transistor Type: BJT; Bipolar RF
- Package Type: SOT3
- Polarity: PNP
from ODG (Origin Data Global)
RF SMALL SIGNAL BIPOLAR TRANSIST [See More]
- Transistor Type: Bipolar RF
from Rochester Electronics
Small Signal Bipolar Transistor, 0.15A, 50V, PNP [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SC-59-3
- Polarity: PNP
from Win Source Electronics
Win Source Part Number: 1096258-SSM2220P. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tube. Standard Package: 50. Voltage - Collector Emitter Breakdown (Max): 36V. Current - Collector (Ic) (Max): 20mA. Transistor Type: 2 PNP (Dual). Vce Saturation... [See More]
- Transistor Type: BJT; Bipolar RF
- Package Type: SOT3
- Polarity: PNP
from ODG (Origin Data Global)
RF 0.1A, ULTRA HIGH FREQ BAND [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT89; TO-243AA
- Polarity: NPN; NPN
from Rochester Electronics
Small Signal Bipolar Transistor [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SOP8
from Win Source Electronics
Win Source Part Number: 1102390-UP04534G0L. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 8,000. Mounting: SMD (SMT). Power - Max: 125mW. Voltage - Collector Emitter Breakdown (Max): 20V. Current - Collector (Ic)... [See More]
- Transistor Type: BJT; Bipolar RF
- Package Type: SOT3
- Polarity: NPN
from ODG (Origin Data Global)
2SC3583 - MD [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
- Polarity: NPN; NPN
from Rochester Electronics
Small Signal Bipolar Transistor, 0.5A, 140V, PNP [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: TO-220; TO-220FM
- Polarity: PNP
from Win Source Electronics
Win Source Part Number: 1106496-BC857BS,135. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 10,000. Mounting: SMD (SMT). Power - Max: 200mW. Voltage - Collector Emitter Breakdown (Max):... [See More]
- Transistor Type: BJT; Bipolar RF
- Package Type: SOT3
- Polarity: PNP
from ODG (Origin Data Global)
RF TRANS NPN 20V 0.05A SMT3 [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
- Polarity: NPN; NPN
from Rochester Electronics
Power Bipolar Transistor, PNP [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: TO-220; TO-220-3FP
- Polarity: PNP
from Win Source Electronics
Win Source Part Number: 1108930-BCM847BS,115. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 300mW. Voltage - Collector Emitter Breakdown (Max): 45V. Current - Collector (Ic)... [See More]
- Transistor Type: BJT; Bipolar RF
- Package Type: SOT3
- Polarity: NPN
from ODG (Origin Data Global)
RF TRANS NPN 20V 0.05A UMT3 [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT323; SC-70, SOT-323
- Polarity: NPN; NPN
from Rochester Electronics
Small Signal Bipolar Transistor, 1.5, PNP [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: TO-251-3, IPak, TO-251AA
- Polarity: PNP
from Win Source Electronics
Win Source Part Number: 1109505-EMX26T2R. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 8,000. Mounting: SMD (SMT). Power - Max: 150mW. Voltage - Collector Emitter Breakdown (Max): 50V. Current - Collector (Ic) (Max):... [See More]
- Transistor Type: BJT; Bipolar RF
- Package Type: SOT3
- Polarity: NPN
from ODG (Origin Data Global)
RF TRANS NPN 30V 550MHZ USM [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT323; SC-70, SOT-323
- Polarity: NPN; NPN
from Rochester Electronics
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Polarity: PNP
from Win Source Electronics
Win Source Part Number: 1111978-BCM847BS-7. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 200mW. Voltage - Collector Emitter Breakdown (Max): 45V. [See More]
- Transistor Type: BJT; Bipolar RF
- Package Type: SOT3
- Polarity: NPN
from ODG (Origin Data Global)
RF TRANS NPN 12V 4.5GHZ SOT323 [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT323; SC-70, SOT-323
- Polarity: NPN; NPN
from Rochester Electronics
PNP Bipolar Transistor [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT-723 3 LEAD
- Polarity: PNP
from Win Source Electronics
Win Source Part Number: 1112673-MMDT4403-TP. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Package: Tape & Reel. Standard Package: 3,000. Mounting: SMD (SMT). Power - Max: 200mW. Voltage - Collector Emitter Breakdown (Max): 40V. Current - Collector (Ic)... [See More]
- Transistor Type: BJT; Bipolar RF
- Package Type: SOT3
- Polarity: PNP
from ODG (Origin Data Global)
RF 0.035A, ULTRA HIGH FREQ BAND [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT323; SC-70, SOT-323
- Polarity: NPN; NPN
from Rochester Electronics
Small Signal Bipolar Transistor [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: D2PAK
from Win Source Electronics
Win Source Part Number: 1115115-EMX1FHAT2R. Category: Discrete Semiconductor Products >Transistors - Bipolar (BJT) - Arrays. Series: Automotive, AEC-Q101. Package: Tape & Reel. Standard Package: 8,000. Mounting: SMD (SMT). Power - Max: 150mW. Voltage - Collector Emitter Breakdown (Max): 50V. [See More]
- Transistor Type: BJT; Bipolar RF
- Package Type: SOT3
- Polarity: NPN
from ODG (Origin Data Global)
RF TRANS NPN 15V SOT89 [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT89; TO-243AA
- Polarity: NPN; NPN
from Rochester Electronics
Small Signal Bipolar Transistor, 3A, 25V, PNP [See More]
- Transistor Type: Bipolar RF; MOSFET RF
- Package Type: SP-8
- Polarity: PNP
from MACOM
At MACOM we offer a broad range of bipolar technology RF power pallet amplifier products designed for applications from1.0 GHz to 3.5 GHz. Our high power pallets are ideal for civil avionics, radar, and industrial, scientific, and medical applications. Our all gold metallization fabrication... [See More]
- Transistor Type: Bipolar RF
- Package Type: Pallet
- Transistor Technology / Material: Silicon
- Transistor Grade / Operating Range: Commercial (optional feature); Industrial (optional feature)
from Utmel Electronic Limited
8.0 A, 100 V NPN Darlington Bipolar Power Transistor [See More]
- Transistor Type: Bipolar RF; Darlington
- Transistor Technology / Material: SILICON
- Polarity: NPN; PNP; PNP
from Northrop Grumman Corporation
WPTB32A0912Ax 960-1215 MHz Bipolar RF Transistor. The WPTB32A0912Ax application-specific transistor uses the 3217 L-Band die which was developed for pulsed radar systems. Optimal internal matching delivers high performance for applications such as the MIDS and JTIDS communication systems. Low... [See More]
- Transistor Type: Bipolar RF
- Transistor Grade / Operating Range: Military
- Transistor Technology / Material: SiC
from Toshiba America, Inc.
Toshiba offers a wide range of bipolar transistors suitable for various applications, including radio-frequency (RF) and power supply devices. Transistors. Bipolar Transistors. Bias Resistor Built-in Transistors (BRT). IGBTs. IEGT (PPI & PMI ）. Multi-Chip Discrete Devices. Junction FETs. [See More]
- Transistor Type: BJT; Bipolar RF; IGBT
from LCSC Electronics Technology (HK) Limited
450V 625mW 18@20mA,20V 200mA NPN SOT-23 Bipolar Transistors - BJT ROHS [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT23
- Polarity: NPN
from PANJIT SemiConductor
Small signal bipolar junction transistor [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT23
- Polarity: NPN
from Broadcom Inc.
Microcurrent device offering good RF performance at 1mA-5mA. The AT-305XX is housed in two packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1.1dB, Gain=16dB at 3V, 1mA; P1dB= 7dBm at 3V, 5mA (all at 900 MHz) [See More]
- Transistor Type: Bipolar RF
- Transistor Technology / Material: Silicon
- Polarity: NPN; NPN
- Package Type: SOT143
from Integra Technologies, Inc.
The high power pulsed avionics transistor part number IB0607S10 is designed for UHF-Band avionics systems operating at 653 to 687 . While operating in class C mode under 20us pulse conditions at VCC= 50V, this common base device supplies a minimum of 12 watts of peak pulse power. The new generation... [See More]
- Transistor Type: Bipolar RF
- Package Type: P32A5
- Transistor Technology / Material: GaN
from MACOM
At MACOM we offer a broad range of bipolar technology RF power transistor products as discrete devices, modules, and pallets from DC to 3.5 GHz. Our high power bipolar transistors are ideal for civil avionics, communications, networks, radar, and industrial, scientific, and medical applications. Our... [See More]
- Transistor Type: Bipolar RF
- Transistor Technology / Material: Silicon
- Polarity: NPN (optional feature)
- Package Type: Flange Ceramic
from Utmel Electronic Limited
AVAGO TECHNOLOGIES AT-41511-TR1G Bipolar - RF Transistor, NPN, 12 V, 10 GHz, 225 mW, 50 mA, 150 [See More]
- Transistor Type: Bipolar RF
- Transistor Technology / Material: SILICON
- Polarity: NPN; NPN
from LCSC Electronics Technology (HK) Limited
TO-220AB Bipolar Transistors - BJT ROHS [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-220
from Broadcom Inc.
Microcurrent device offering good RF performance at 1mA-20mA. The AT-320XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1dB, Gain=14dB at 3V, 2mA; P1dB= 13dBm at 3V, 20mA (all at 900 MHz) [See More]
- Transistor Type: Bipolar RF
- Transistor Technology / Material: Silicon
- Polarity: NPN; NPN
- Package Type: SOT323
from Integra Technologies, Inc.
The high power pulsed avionics transistor part number IB1012S150 is designed for L-Band avionics systems operating at 1025 to 1150 . While operating in class C mode under DME pulse conditions at VCC=50V, this common base device supplies a minimum of 150 watts of peak pulse power. It utilizes a low... [See More]
- Transistor Type: Bipolar RF
- Package Type: P44C14
- Transistor Technology / Material: GaN
from Utmel Electronic Limited
Bipolar (Bjt) Single Transistor, Pnp, -40 V, 1.6 W, -5 A, 250 Rohs Compliant: Yes [See More]
- Transistor Type: BJT; Bipolar RF
- Transistor Technology / Material: SILICON
- Polarity: PNP; PNP
from LCSC Electronics Technology (HK) Limited
40V 300mW 300@150mA,10V 600mA NPN SOT-23 Bipolar Transistors - BJT ROHS [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT23
- Polarity: NPN
from Broadcom Inc.
Microcurrent device offering good RF performance at 1mA-20mA. The AT-320XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1dB, Gain=14dB at 3V, 2mA; P1dB= 13dBm at 3V, 20mA (all at 900 MHz) [See More]
- Transistor Type: Bipolar RF
- Transistor Technology / Material: Silicon
- Polarity: NPN; NPN
- Package Type: SOT23
from Integra Technologies, Inc.
The high power pulsed avionics transistor part number IB1012S50 is designed for L-Band avionics systems operating at 1025 to 1150 . While operating in class C mode under DME pulse conditions at VCC=50V, this common base device supplies a minimum of 50 watts of peak pulse power. It utilizes a low... [See More]
- Transistor Type: Bipolar RF
- Package Type: P32A5
- Transistor Technology / Material: GaN
from Utmel Electronic Limited
Bipolar Motor Driver Power MOSFET Parallel 36-VMFP [See More]
- Transistor Type: Bipolar RF; MOSFET; Power-MOSFET
from LCSC Electronics Technology (HK) Limited
32V 1W 180@500mA,3V 2A PNP SOT-89-3 Bipolar Transistors - BJT ROHS [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT89
- Polarity: PNP
from Broadcom Inc.
Microcurrent device offering good RF performance at 1mA-20mA. The AT-320XX is housed in a variety of packages and is well suited for paging, cellular/PCS, and other RF applications. NF=1dB, Gain=14dB at 3V, 2mA; P1dB= 13dBm at 3V, 20mA (all at 900 MHz) [See More]
- Transistor Type: Bipolar RF
- Transistor Technology / Material: Silicon
- Polarity: NPN; NPN
- Package Type: SOT-363 (SC70)
from Integra Technologies, Inc.
The high power pulsed transistor device part number IB1012S500 is designed for systems operating over the instantaneous bandwidth of 1025-1150 . While operating in class C mode under DME pulsing conditions and Vcc=50V, this common base device supplies a minimum of 500 watts of peak pulse power. It... [See More]
- Transistor Type: Bipolar RF
- Package Type: P54A5
- Transistor Technology / Material: GaN
from Utmel Electronic Limited
Bipolar Power Transistor, NPN, 15 A, 230 V, 200 Watt [See More]
- Transistor Type: Bipolar RF
- Transistor Technology / Material: SILICON
- Polarity: NPN; NPN
from LCSC Electronics Technology (HK) Limited
TO-92 Bipolar Transistors - BJT ROHS [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-92
from Integra Technologies, Inc.
#9632; Silicon LDMOS Technology. ■ POUT-PK = 200W @ ELM Mode S/6.4%/50V; (PAVG = 12.8W). ■ 1030 or 1090 Operating Frequency. ■ Internal Impedance Pre-matched Device. ■ Specified For Use Under Class AB Operation. ■ Metal Based Package Sealed With Ceramic-Epoxy Lid. [See More]
- Transistor Type: Bipolar RF
- Package Type: PL64A1
- Transistor Technology / Material: GaN
from Utmel Electronic Limited
Bipolar Transistor, (-)30V, (-)1.5A, Low VCE(sat), (PNP)NPN Single CPH3 [See More]
- Transistor Type: Bipolar RF
- Polarity: NPN; PNP
from LCSC Electronics Technology (HK) Limited
40V 625mW 40@500mA,10V 600mA NPN TO-92-3 Bipolar Transistors - BJT ROHS [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-92
- Polarity: NPN
from Integra Technologies, Inc.
#9632; Silicon LDMOS Technology. ■ POUT-PK = 1000W @ 50uS, 2%, 50V. ■ 1030 Operating Frequency. ■ Internal Impedance Pre-matched Device. ■ Specified For Use Under Class AB Operation. ■ Metal Based Package Sealed With Ceramic-Epoxy Lid. ■ Gold Metallization... [See More]
- Transistor Type: Bipolar RF
- Package Type: PL124A1
- Transistor Technology / Material: GaN
from Utmel Electronic Limited
Bipolar Transistor, (-)30V, (-)3A, Low VCE(sat), (PNP)NPN Single MCPH3 [See More]
- Transistor Type: Bipolar RF
- Polarity: NPN; PNP
from LCSC Electronics Technology (HK) Limited
40V 625mW 100@150mA,10V 600mA NPN TO-92-3 Bipolar Transistors - BJT ROHS [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-92
- Polarity: NPN
from Integra Technologies, Inc.
The high power transistor part number ILD1011M15HV is designed for Avionics systems operating at 1030-1090 . Operating at 507s, 2% pulse conditions this LDMOS FET device supplies a minimum of 15 watts of power at 1030/1090 . All devices are 100% screened for large signal RF parameters. [See More]
- Transistor Type: Bipolar RF
- Package Type: PL32A1
- Transistor Technology / Material: GaN
from Utmel Electronic Limited
Bipolar Transistor, (-)50V, (-)1A, Low VCE(sat), (PNP)NPN Single CPH3 [See More]
- Transistor Type: Bipolar RF
- Transistor Technology / Material: SILICON
- Polarity: NPN; PNP; NPN
from LCSC Electronics Technology (HK) Limited
60V 625mW 50@500mA,10V 600mA PNP TO-92-3 Bipolar Transistors - BJT ROHS [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-92
- Polarity: PNP
from Integra Technologies, Inc.
The high power pulsed transistor part number ILD1214L250 is designed for L-Band systems operating at 1.2 –1.4 GHz. Operating at a pulse width of 1ms with a duty factor of 10%, this dual MOSFET device supplies a minimum of 250 watts of peak pulse power across the instantaneous operating... [See More]
- Transistor Type: Bipolar RF
- Package Type: PL124A1
- Transistor Technology / Material: GaN
from Utmel Electronic Limited
Bipolar Transistor, -30V, -2A, Low VCE(sat), PNP Single CPH3 [See More]
- Transistor Type: Bipolar RF
- Transistor Technology / Material: SILICON
- Polarity: PNP; PNP
from LCSC Electronics Technology (HK) Limited
60V 625mW 100@150mA,10V 600mA PNP TO-92-3 Bipolar Transistors - BJT ROHS [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-92
- Polarity: PNP
from Integra Technologies, Inc.
Part number ILD2731M30 is designed for S-Band radar applications operating over the 2.7-3.1 GHz instantaneous frequency band. Under 300us/10% pulsing conditions it easily supplies a minimum of 30 watts of peak output power with well over 10dB gain. Since it operates under Class B or AB bias it... [See More]
- Transistor Type: Bipolar RF
- Package Type: PL32A1
- Transistor Technology / Material: GaN
from Utmel Electronic Limited
Bipolar Transistor, 100V, 1A, Low VCE(sat), NPN Single TP/TP-FA [See More]
- Transistor Type: Bipolar RF
- Polarity: NPN; NPN
from LCSC Electronics Technology (HK) Limited
TO-3 Bipolar Transistors - BJT ROHS [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-3
from Integra Technologies, Inc.
#9632; Silicon LDMOS Technology. ■ POUT-PK = 60W @ 300us/20%/32V; (PAVG = 12W). ■ 2.7-3.1GHz Instantaneous Operating Frequency Range. ■ Internal Impedance Pre-matched Device. ■ Specified For Use Under Class AB Operation. ■ Metal Based Package Sealed With Ceramic-Epoxy... [See More]
- Transistor Type: Bipolar RF
- Package Type: PL32A1
- Transistor Technology / Material: GaN
from Utmel Electronic Limited
Bipolar Transistor, 50V, 10A, Low VCE(sat), NPN TO-220F-3FS [See More]
- Transistor Type: Bipolar RF
- Transistor Technology / Material: SILICON
- Polarity: NPN; NPN
from LCSC Electronics Technology (HK) Limited
140V 150W 5@16A,4V 16A NPN TO-3 Bipolar Transistors - BJT ROHS [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-3
- Polarity: NPN
from Integra Technologies, Inc.
Part number ILD2735M120 is designed for S-Band radar applications operating over the 2.7 – 3.5 GHz instantaneous frequency band. Under 300us / 10% pulsed conditions it supplies a minimum of 120 watts of peak output power. Specified operation is with Class AB bias. The broadband test fixture... [See More]
- Transistor Type: Bipolar RF
- Package Type: PL124A1
- Transistor Technology / Material: GaN
from Utmel Electronic Limited
Bipolar Transistor, 80V, 2.5A, Low VCE(sat), NPN Single PCP [See More]
- Transistor Type: Bipolar RF
- Transistor Technology / Material: SILICON
- Polarity: NPN; NPN
from LCSC Electronics Technology (HK) Limited
40V 625mW 100@10mA,1V 200mA NPN TO-92-3 Bipolar Transistors - BJT ROHS [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-92
- Polarity: NPN
from Integra Technologies, Inc.
Part number ILT2731M130 is a high power transistor which is internally matched to 50 ohms. It is designed for S-Band radar systems and operates over the instantaneous bandwidth of 2.7-3.1 GHz. It utilizes gold metal LDMOS transistor technology operating in common source configuration. It may be... [See More]
- Transistor Type: Bipolar RF
- Package Type: P64H2
- Transistor Technology / Material: GaN
from Utmel Electronic Limited
Bipolar Transistors - BJT 180V 1A NPN HI VLTGE LO VCESAT TRANSISTOR [See More]
- Transistor Type: BJT; Bipolar RF
- Transistor Technology / Material: SILICON
- Polarity: NPN; NPN
from LCSC Electronics Technology (HK) Limited
TO-92-3 Bipolar Transistors - BJT ROHS [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-92
from Integra Technologies, Inc.
Part number ILT2731M15 is a high power transistor which is. internally matched to 50 ohms. It is designed for S-Band radar. systems and operates over the instantaneous bandwidth of 2.7-3.1. GHz. It utilizes gold metal LDMOS transistor technology operating. in common source configuration. Production... [See More]
- Transistor Type: Bipolar RF
- Package Type: PL32A2
- Transistor Technology / Material: GaN
from Utmel Electronic Limited
Bipolar Transistors - BJT 1A [See More]
- Transistor Type: BJT; Bipolar RF
- Transistor Technology / Material: SILICON
- Polarity: PNP; PNP
from LCSC Electronics Technology (HK) Limited
40V 625mW 200mA NPN TO-92-3 Bipolar Transistors - BJT ROHS [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-92
- Polarity: NPN
from Integra Technologies, Inc.
Part number ILT2731M30 is a high power transistor which is internally matched to 50 ohms. It is designed for S-Band radar systems and operates over the instantaneous bandwidth of 2.7-3.1 GHz. It utilizes gold metal LDMOS transistor technology operating in common source configuration. Production RF... [See More]
- Transistor Type: Bipolar RF
- Package Type: PL32A2
- Transistor Technology / Material: GaN
from Utmel Electronic Limited
Bipolar Transistors - BJT 1W -20V [See More]
- Transistor Type: BJT; Bipolar RF
- Transistor Technology / Material: SILICON
- Polarity: PNP; PNP
from LCSC Electronics Technology (HK) Limited
PNP TO-92 Bipolar Transistors - BJT ROHS [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-92
- Polarity: PNP
from Utmel Electronic Limited
Bipolar Transistors - BJT 200mW Half H-Bridge [See More]
- Transistor Type: BJT; Bipolar RF
- Transistor Technology / Material: SILICON
- Polarity: NPN; PNP; NPN, PNP
from LCSC Electronics Technology (HK) Limited
40V 625mW 100@10mA,1V 200mA NPN TO-92-3 Bipolar Transistors - BJT ROHS [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-92
- Polarity: NPN
from Utmel Electronic Limited
Bipolar Transistors - BJT 20V NPN SuperSOT4 [See More]
- Transistor Type: BJT; Bipolar RF
- Transistor Technology / Material: SILICON
- Polarity: NPN; NPN
from LCSC Electronics Technology (HK) Limited
TO-92-3 Bipolar Transistors - BJT ROHS [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-92
from Utmel Electronic Limited
Bipolar Transistors - BJT 250mW 45V [See More]
- Transistor Type: BJT; Bipolar RF
- Transistor Technology / Material: SILICON
- Polarity: PNP; PNP
from LCSC Electronics Technology (HK) Limited
40V 625mW 10@10mA,1V 200mA NPN TO-92-3 Bipolar Transistors - BJT ROHS [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-92
- Polarity: NPN
from Utmel Electronic Limited
Bipolar Transistors - BJT 500mA 30V PNP [See More]
- Transistor Type: BJT; Bipolar RF
- Transistor Technology / Material: SILICON
- Polarity: PNP; PNP
from LCSC Electronics Technology (HK) Limited
40V 625mW 200mA NPN TO-92-2.54mm Bipolar Transistors - BJT ROHS [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-92
- Polarity: NPN
from Utmel Electronic Limited
Bipolar Transistors - BJT 600V 0.1A PNP high vltg low VCEsat tran [See More]
- Transistor Type: BJT; Bipolar RF
- Transistor Technology / Material: SILICON
- Polarity: PNP; PNP
from LCSC Electronics Technology (HK) Limited
40V 625mW 100@10mA,1V 200mA NPN TO-92-3 Bipolar Transistors - BJT ROHS [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-92
- Polarity: NPN
from Utmel Electronic Limited
Bipolar Transistors - BJT BIP NPN 5A 50V [See More]
- Transistor Type: BJT; Bipolar RF
- Transistor Technology / Material: SILICON
- Polarity: NPN; NPN
from LCSC Electronics Technology (HK) Limited
40V 625mW 100@10mA,1V 200mA NPN TO-92-2.54mm Bipolar Transistors - BJT ROHS [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-92
- Polarity: NPN
from Utmel Electronic Limited
Bipolar Transistors - BJT BIP PNP 4A 50V [See More]
- Transistor Type: BJT; Bipolar RF
- Transistor Technology / Material: SILICON
- Polarity: PNP; PNP
from LCSC Electronics Technology (HK) Limited
40V 625mW 100@10mA,1V 200mA NPN TO-92-3L Bipolar Transistors - BJT ROHS [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-92
- Polarity: NPN
from Utmel Electronic Limited
Bipolar Transistors - BJT BIPLR PW TRANS FLAT LEAD 4.5x4.0mm [See More]
- Transistor Type: BJT; Bipolar RF
- Transistor Technology / Material: SILICON
- Polarity: PNP; PNP
from LCSC Electronics Technology (HK) Limited
40V 625mW 100@10mA,1V 200mA NPN TO-92-3 Bipolar Transistors - BJT ROHS [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-92
- Polarity: NPN
from Utmel Electronic Limited
Bipolar Transistors - BJT BIPOLAR TRANS PNP [See More]
- Transistor Type: BJT; Bipolar RF
- Transistor Technology / Material: SILICON
- Polarity: PNP; PNP
from LCSC Electronics Technology (HK) Limited
40V 500mW 100@10mA,1V 200mA NPN SOT-89-3 Bipolar Transistors - BJT ROHS [See More]
- Transistor Type: Bipolar RF
- Package Type: SOT89
- Polarity: NPN
from Utmel Electronic Limited
Bipolar Transistors - BJT BIPOLAR TRANS,PNP -100V,-5A [See More]
- Transistor Type: BJT; Bipolar RF
- Transistor Technology / Material: SILICON
- Polarity: PNP; PNP
from LCSC Electronics Technology (HK) Limited
40V 625mW 200mA PNP TO-92-3 Bipolar Transistors - BJT ROHS [See More]
- Transistor Type: Bipolar RF
- Package Type: TO-92
- Polarity: PNP