HEMT Transistors
Last Updated: January 31, 2025
Description
High Electron Mobility Transistors (HEMTs) are semiconductor devices known for their ability to operate at high frequencies and high power levels. They are characterized by their high electron mobility, which allows for efficient and rapid switching of electrical signals.
Working Principle
HEMTs operate by utilizing a heterojunction, which is a junction between two materials with different bandgaps. This structure creates a two-dimensional electron gas (2DEG) at the interface, allowing electrons to move with minimal scattering and resistance. This high electron mobility is what makes HEMTs particularly useful for high-frequency applications. The materials used in HEMTs, such as GaN, GaN on SiC, pure SiC, or GaAs, contribute to their high thermal conductivity and low parasitic gate capacitance, enabling them to function effectively at elevated temperatures and frequencies .
Applications
HEMTs are widely used in applications that require high-frequency and high-power performance. Specific examples include wireless devices and satellite communication systems, where pseudomorphic high electron mobility transistors (PHEMTs) are commonly employed . They are also used in pulse driver circuits for power conversion applications due to their low R-ON values and high thermal conductivity .
Advantages over other Transistors
HEMTs offer several advantages over other types of transistors. They have lower R-ON values and higher thermal conductivity, which allows them to operate at higher temperatures and frequencies compared to silicon-based transistors . Additionally, the materials used in HEMTs, such as GaN and SiC, provide a higher bandgap, which contributes to their superior performance in high-power and high-frequency applications.
Limitations
Despite their advantages, HEMTs have certain limitations. For instance, recessed gate MISHEMTs are limited in obtaining threshold voltages above 1.5 V and have issues with low positive bias thermal instability (PBTI) . These limitations can affect their performance and reliability in certain applications.
Considerations
When considering the use of HEMTs, it is important to evaluate factors such as initial costs, operating expenses, and maintenance requirements. HEMTs may have higher initial costs due to the advanced materials and manufacturing processes involved. However, their high efficiency and performance can lead to lower operating expenses over time. Durability and accuracy are generally high, but replacement and maintenance costs should be considered, especially in applications where reliability is critical.
from Qorvo
The RFAM3620 is an Integrated Edge QAM Amplifier Module. The part employs GaAs pHEMT die, GaAs MESFET die, a 20 dB range variable attenuator and a power enable feature, has high output capability, and is operated from 45 MHz to 1218 MHz. It provides excellent linearity and superior return loss... [See More]
- Transistor Type: MESFET; HEMT; PHEMT
- Package Type: SMD
- Transistor Technology / Material: GaAs
from Qorvo
Qorvo's TGF2954 is a discrete 5.04 mm GaN on SiC HEMT which operates from DC-12 GHz. The TGF2954 typically provides 44.5 dBm of saturated output power with power gain of 19.5 dB at 3 GHz. The maximum power added efficiency is 71.5 % which makes the TGF2954 appropriate for high efficiency... [See More]
- Transistor Type: HEMT
- Package Type: Die
- Transistor Technology / Material: GaN on SiC
- Transistor Grade / Operating Range: Military
from Qorvo
Qorvo's TGF2023-2-20 is a discrete 20 mm GaN on SiCHEMT which operates from DC to 14 GHz. The TGF2023-2-20 typically provides 50.5 dBm of saturated output power with power gain of 19.2 dB at 3 GHz. The maximum power added efficiency is 70.5% which makes the TGF2023-2-20 appropriate for high... [See More]
- Transistor Type: HEMT
- Package Type: Die
- Transistor Technology / Material: GaN on SiC
- Transistor Grade / Operating Range: Military
from Qorvo
Qorvo's TGF2023-2-10 is a discrete 10 mm GaN on SiC HEMT which operates from DC to 14 GHz. The TGF2023-2-10 typically provides 47.4 dBm of saturated output power with power gain of 19.8 dB at 3 GHz. The maximum power added efficiency is 69.5% which makes the TGF2023-2-10 appropriate for high... [See More]
- Transistor Type: HEMT
- Package Type: Die
- Transistor Technology / Material: GaN on SiC
- Transistor Grade / Operating Range: Military
from Qorvo
Qorvo's TGF2023-2-02 is a discrete 2.5 mm GaN on SiC HEMT which operates from DC to 18 GHz. The TGF2023-2-02 typically provides 40.1 dBm of saturated output power with power gain of 21 dB at 3 GHz. The maximum power added efficiency is 73.3% which makes the TGF2023-2-02 appropriate for high... [See More]
- Transistor Type: HEMT
- Package Type: Die
- Transistor Technology / Material: GaN on SiC
- Transistor Grade / Operating Range: Military
from Qorvo
Qorvo's TGF2023-2-05 is a discrete 5.0 mm GaN on SiC HEMT which operates from DC to 18 GHz. The TGF2023-2-05 typically provides 43 dBm of saturated output power with power gain of 18 dB at 3 GHz. The maximum power added efficiency is 78.3% which makes the TGF2023-2-05 appropriate for high efficiency... [See More]
- Transistor Type: HEMT
- Package Type: Die
- Transistor Technology / Material: GaN on SiC
- Transistor Grade / Operating Range: Military
from Qorvo
Qorvo's TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC to 18 GHz. The device typically provides 38 dBm of saturated output power with power gain of 18 dB at 3 GHz. The maximum power added efficiency is 66% which makes the TGF2023-2-01 appropriate for high efficiency... [See More]
- Transistor Type: HEMT
- Package Type: Die
- Transistor Technology / Material: GaN on SiC
- Transistor Grade / Operating Range: Military
from Qorvo
Qorvo's QPD2120D is a discrete 1200-micron pHEMT which operates from DC to 20 GHz. The QPD2120D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating... [See More]
- Transistor Type: HEMT; PHEMT
- Package Type: Die
- Transistor Technology / Material: DC - 20 GHz, 1200 um Discrete GaAs pHEMT Die
- Transistor Grade / Operating Range: Military
from Qorvo
Qorvo's QPD2160D is a discrete 1600-micron pHEMT which operates from DC to 20 GHz. The QPD2160D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating... [See More]
- Transistor Type: HEMT; PHEMT
- Package Type: Die
- Transistor Technology / Material: DC - 20 GHz, 1600 um Discrete GaAs pHEMT Die
- Transistor Grade / Operating Range: Military
from Qorvo
Qorvo's QPD2018D is a discrete 180-micron pHEMT which operates from DC to 20 GHz. The QPD2018D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating... [See More]
- Transistor Type: HEMT; PHEMT
- Package Type: Die
- Transistor Technology / Material: GaAs
- Transistor Grade / Operating Range: Military
from Qorvo
Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating... [See More]
- Transistor Type: HEMT; PHEMT
- Package Type: Die
- Transistor Technology / Material: DC - 20 GHz, 250 um Discrete GaAs pHEMT Die
- Transistor Grade / Operating Range: Military
from Qorvo
Qorvo's QPD2040D is a discrete 400-micron pHEMT which operates from DC to 20 GHz. The QPD2040D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating... [See More]
- Transistor Type: HEMT; PHEMT
- Package Type: Die
- Transistor Technology / Material: DC - 20 GHz, 400 um Discrete GaAs pHEMT Die
- Transistor Grade / Operating Range: Military
from Qorvo
Qorvo's QPD2060D is a discrete 600-micron pHEMT which operates from DC to 20 GHz. The QPD2060D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating... [See More]
- Transistor Type: HEMT; PHEMT
- Package Type: Die
- Transistor Technology / Material: DC - 20 GHz, 600 um Discrete GaAs pHEMT Die
- Transistor Grade / Operating Range: Military
from Qorvo
Qorvo's QPD2080D is a discrete 800-micron pHEMT which operates from DC to 20 GHz. The QPD2080D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating... [See More]
- Transistor Type: HEMT; PHEMT
- Package Type: Die
- Transistor Technology / Material: DC - 20 GHz, 800 um Discrete GaAs pHEMT Die
- Transistor Grade / Operating Range: Military
from Wolfspeed
Wolfspeed ’s CG2H40010 is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CG2H40010, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide... [See More]
- Transistor Type: HEMT
- Package Type: Flange/Pill
- Transistor Technology / Material: GaN
from Wolfspeed
Wolfspeed ’s CGH40010 is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40010, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide... [See More]
- Transistor Type: HEMT
- Package Type: Flange/Pill
- Transistor Technology / Material: GaN
from Wolfspeed
Wolfspeed ’s CGHV96100F2 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) on silicon-carbide (SiC) substrates. This GaN internally matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or... [See More]
- Transistor Type: HEMT
- Package Type: Flange
- Transistor Technology / Material: GaN
from Wolfspeed
Wolfspeed ’s CGHV40100 is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGHV40100, operating from a 50-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide... [See More]
- Transistor Type: HEMT
- Package Type: Flange/Pill
- Transistor Technology / Material: GaN
from Wolfspeed
Wolfspeed ’s CGH40120F is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40120F, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide... [See More]
- Transistor Type: HEMT
- Package Type: Flange/Pill
- Transistor Technology / Material: GaN
from Wolfspeed
Wolfspeed ’s CGH40120P is an unmatched, gallium-nitride (GaN), high-electron-mobility transistor (HEMT). The CGH40120P, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide... [See More]
- Transistor Type: HEMT
- Package Type: Pill
- Transistor Technology / Material: GaN
from Wolfspeed
Wolfspeed ’s CGH21120F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH21120F ideal for 1.8 – 2.3-GHz WCDMA and LTE amplifier applications. The transistor is... [See More]
- Transistor Type: HEMT
- Package Type: Flange
- Transistor Technology / Material: GaN
from Wolfspeed
Wolfspeed ’s CGH25120F is a gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7GHz WiMAX, LTE and BWA amplifier applications. The transistor is supplied... [See More]
- Transistor Type: HEMT
- Package Type: Flange
- Transistor Technology / Material: GaN
from Wolfspeed
Wolfspeed's CGHV35120F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) designed specifically for high efficiency, high gain, and wide bandwidth capabilities, which makes CGHV35120F ideal for 3.1 - 3.5 GHz Radar amplifier applications. The transistor is supplied in a ceramic/metal... [See More]
- Transistor Type: HEMT
- Package Type: Flange
- Transistor Technology / Material: GaN
from Wolfspeed
Wolfspeed ’s CGH60120D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer... [See More]
- Transistor Type: HEMT
- Package Type: Die
- Transistor Technology / Material: GaN
from Wolfspeed
Wolfspeed's CG2H40120 is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CG2H40120, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide... [See More]
- Transistor Type: HEMT
- Package Type: Flange/Pill
- Transistor Technology / Material: GaN
from Wolfspeed
Wolfspeed ’s CGH09120F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH09120F ideal for MC-GSM, WCDMA and LTE amplifier applications. The transistor is supplied in a... [See More]
- Transistor Type: HEMT
- Package Type: Flange
- Transistor Technology / Material: GaN
from Wolfspeed
Wolfspeed ’s CGHV27015S is an unmatched, gallium-nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV27015S ideal for LTE, 4G Telecom and BWA amplifier applications. The CGHV27015S GaN... [See More]
- Transistor Type: HEMT
- Package Type: Surface Mount
- Transistor Technology / Material: GaN
from Wolfspeed
Wolfspeed ’s CMPA2735015D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium-arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN... [See More]
- Transistor Type: HEMT
- Package Type: Bare Die
- Transistor Technology / Material: GaN
from Wolfspeed
Wolfspeed ’s CGH27015 is a gallium-nitride (GaN) high-electron-mobility transistor designed specifically for high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH27015 ideal for VHF, Comms, 3G, 4G, LTE, 2.3 – 2.9-GHz WiMAX and BWA amplifier applications. The... [See More]
- Transistor Type: HEMT
- Package Type: Flange/Pill
- Transistor Technology / Material: GaN
from Wolfspeed
Wolfspeed ’s CGH35015 is a gallium-nitride (GaN) high-electron-mobility transistor designed specifically for 802.16-2004 WiMAX Fixed Access applications. GaN HEMTs offer high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGH35015 ideal for 3.3 – 3.9-GHz WiMAX and... [See More]
- Transistor Type: HEMT
- Package Type: Flange/Pill
- Transistor Technology / Material: GaN
from Wolfspeed
Wolfspeed ’s CGH60015D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer... [See More]
- Transistor Type: HEMT
- Package Type: Die
- Transistor Technology / Material: GaN
from Wolfspeed
Wolfspeed ’s CG2H80015D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer... [See More]
- Transistor Type: HEMT
- Package Type: Die
- Transistor Technology / Material: GaN
from Wolfspeed
Wolfspeed ’s CGHV35150 is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high-efficiency, high-gain and wide-bandwidth capabilities, which makes the CGHV35150 ideal for 2.9 – 3.5-GHz S-band radar-amplifier applications. The transistor is... [See More]
- Transistor Type: HEMT
- Package Type: Flange/Pill
- Transistor Technology / Material: GaN
from Wolfspeed
Wolfspeed ’s CGHV60170D is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated-electron-drift velocity, and higher thermal conductivity. GaN HEMTs offer... [See More]
- Transistor Type: HEMT
- Package Type: Die
- Transistor Technology / Material: GaN
from Wolfspeed
Wolfspeed ’s CGH40180PP is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGH40180PP, operating from a 28-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and... [See More]
- Transistor Type: HEMT
- Package Type: Push-Pull
- Transistor Technology / Material: GaN
from Wolfspeed
Wolfspeed ’s CGHV40180 is a gallium-nitride (GaN) High Electron Mobility Transistor (HEMT). It has an input match to deliver the best possible instantaneous broadband performance from DC-2.0 GHz. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown... [See More]
- Transistor Type: HEMT
- Package Type: Flange and Pill
- Transistor Technology / Material: GaN
from Wolfspeed
Wolfspeed ’s CMPA0060002D is a gallium-nitride (GaN) HEMT-based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN... [See More]
- Transistor Type: HEMT
- Package Type: Die
- Transistor Technology / Material: GaN
from Wolfspeed
Wolfspeed ’s CGHV40200PP is an unmatched, gallium-nitride (GaN) high-electron-mobility transistor (HEMT). The CGHV40200PP, operating from a 50-volt rail, offers a general-purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and... [See More]
- Transistor Type: HEMT
- Package Type: Push-Pull
- Transistor Technology / Material: GaN
from Wolfspeed
Wolfspeed ’s CGHV50200F is a gallium-nitride (GaN) high-electron-mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV50200F ideal for troposcatter communications, 4.4 - 5.0-GHz C-Band SatCom applications and... [See More]
- Transistor Type: HEMT
- Package Type: Flange
- Transistor Technology / Material: GaN