Power BJT Transistors Transistors
from Rochester Electronics
Power Bipolar Transistor, 16A, 140V, NPN [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: TO-204
- Polarity: NPN
from Richardson RFPD
Richardson RFPD, an Arrow Company, is a specialized electronic component distributor providing design engineers with deep technical expertise and localized global design support for the latest new products from the world's leading suppliers of RF, Wireless, Energy and Power Technologies. [See More]
- Transistor Type: Power-BJT
from Nexperia B.V.
NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61010PY-Q. Features and benefits. High thermal power dissipation capability. High temperature applications up to 175 °C. Reduced Printed Circuit Board (PCB)... [See More]
- Transistor Type: Power-BJT
- Package Type: SOT669
from Rochester Electronics
Power Bipolar Transistor, 25A, 120V, PNP, TO-204AA, Metal, 2 Pin [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: TO-204AA
- Polarity: PNP
from Nexperia B.V.
NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32CA. Features and benefits. High thermal power dissipation capability. High energy efficiency due to less heat generation. Electrically similar to popular MJD31... [See More]
- Transistor Type: Power-BJT
- Package Type: SOT428C
- Polarity: NPN
- Transistor Grade / Operating Range: Automotive
from Rochester Electronics
Power Bipolar Transistor, 15A, 60V, PNP [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: TO-220; TO-220AB
- Polarity: PNP
from Nexperia B.V.
NPN high power bipolar transistor in a power SOT1289B (CFP15B) flat lead Surface-Mounted Device (SMD) plastic package. PNP complement: MJPE32C-Q. Features and benefits. High thermal power dissipation capability. High energy efficiency due to less heat generation. Electrically similar to popular... [See More]
- Transistor Type: Power-BJT
- Package Type: SOT1289B
from Rochester Electronics
Power Bipolar Transistor, 1A I(C), 1-Element, NPN [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: SOT89
- Polarity: NPN
from Nexperia B.V.
NPN power transistors in a power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Features and benefits. High collector current capability IC and ICM. Three current gain selections. High power dissipation capability. AEC-Q101 qualified. Applications. Linear voltage regulators. [See More]
- Transistor Type: Power-BJT
- Package Type: TO-243
- Polarity: NPN
from Rochester Electronics
Power Bipolar Transistor, 0.1A, 300V, PNP, TO-126, 3 Pin [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: TO-126
- Polarity: PNP
from Rochester Electronics
Power Bipolar Transistor, 2A, 100V, PNP [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: TO-220; TO-220FM
- Polarity: PNP
from Rochester Electronics
Power Bipolar Transistor, PNP [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: TO-220; TO-220-3FP
- Polarity: PNP
from Rochester Electronics
Power Bipolar Transistor, 5A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Polarity: PNP
from Rochester Electronics
Power Bipolar Transistor [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: IPAK3
from Rochester Electronics
Power Bipolar Transistor [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: DPAK
from Rochester Electronics
Power Bipolar Transistor, 10A, 400V, NPN, TO-218, 3 Pin [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: TO-218
- Polarity: NPN
from Rochester Electronics
Power Bipolar Transistor, 4A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: CAN3/4
- Polarity: NPN
from Rochester Electronics
Power Bipolar Transistor [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: TO-92; TO-92
from Rochester Electronics
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: SOT1061
- Polarity: PNP
from Rochester Electronics
Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: SOT1061
- Polarity: NPN
from Rochester Electronics
Power Bipolar Transistor [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: SOT223
from Rochester Electronics
Power Bipolar Transistor [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: SOT223
from Rochester Electronics
1.5 A, 45V NPN Power Bipolar Junction Transistor [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: TO-126-3
- Polarity: NPN
from Rochester Electronics
1.5 A, 60 V NPN Power Bipolar Junction Transistor [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: TO-126-3
- Polarity: NPN
from Rochester Electronics
Power Bipolar Transistor, 10A, 100V, PNP, TO-247, Plastic/Epoxy, 3 Pin [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: TO-247; TO-247
- Polarity: PNP
from Rochester Electronics
Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: TO-220; TO-220
- Polarity: PNP
from Rochester Electronics
Power Bipolar Transistor, 0.5A, 50V, 7-Element, NPN, Plastic/Epoxy, 16 Pin [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: SOIC16
- Polarity: NPN
from Rochester Electronics
Power Bipolar Transistor, SO8 [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: SOIC8
from Rochester Electronics
Power Bipolar Transistor [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: SOT1118
from Rochester Electronics
Power Bipolar Transistor [See More]
- Transistor Type: Power-BJT; Bipolar RF; Power-MOSFET
- Package Type: SOT23
from Integra Technologies, Inc.
IGN0110UM100 is a dual gallium nitride (GaN) high electron mobility transistor (HEMT). This device is designed for Broadband applications operating over the 100 – 1GHz instantaneous frequency band. Under CW conditions it supplies a minimum of 100 watts of output power with 12dB gain. Specified... [See More]
- Transistor Type: Power-BJT; MOSFET RF
- Package Type: PL22D1
- Transistor Technology / Material: GaN
from Twilight Technology Inc.
Twilight Technology, Inc. specializes in IC packaging and testing services focused on providing solutions for high reliability applications or obsolete components. Twilight Technology has manufactured and marketed a variety of standard and proprietary semiconductor packaging and memory module... [See More]
- Transistor Type: Power-BJT
from Utmel Electronic Limited
POWER BJT [See More]
- Transistor Type: BJT; Power-BJT
from Universal Semiconductor, Inc.
The USH5008 is a High Voltage Integrated Circuit (HIVIC) designed for switching high voltage analog signals. This HIVIC can be used in ultrasound imaging systems and in other applications that require flexible high voltage switching controlled by internal CMOS logic signals. The USH5008 combines... [See More]
- Transistor Type: Power-BJT; CMOS
- Package Type: SO-7, Plas/Cer DIP, PLCC
- Polarity: Complementary
- Transistor Grade / Operating Range: Commercial; Industrial; Military (optional feature)
from PUI - Projections Unlimited, Inc.
NPN Medium Power Transistors [See More]
- Transistor Type: Power-BJT
from MACOM
MACOMs product portfolio of high reliability semiconductors for the military, defense, satellite and aerospace industries includes: Rectifiers, Switching diodes, Zener diodes, Temperature compensated zeners, Current regulators, Transient voltage suppressors, Silicon controlled rectifiers, Small... [See More]
- Transistor Type: Power-BJT
- Package Type: TO-3 (optional feature); TO-39 (optional feature); TO-66, TO-5, TO-276, TO-213, TO-205
- Polarity: NPN
- Transistor Grade / Operating Range: High Reliability
from Integra Technologies, Inc.
#9632; GaN on SiC HEMT Technology. ■ POUT-PK ≥ 125W @ 2ms/20%/50V. ■ 1.2-1.4GHz Instantaneous Operating Frequency Range. ■ Internal Impedance Pre-matched Device. ■ Depletion Mode Device. ■ Negative Gate Voltage and Bias Sequencing Required. ■ Specified For Use... [See More]
- Transistor Type: Power-BJT; MOSFET RF
- Package Type: PL44C1
- Transistor Technology / Material: GaN
from Utmel Electronic Limited
POWER BJT, PNP, -30V, -1.5A, SOT-23 - More Details [See More]
- Transistor Type: BJT; Power-BJT
- Transistor Technology / Material: SILICON
- Polarity: PNP; PNP
from PUI - Projections Unlimited, Inc.
PNP Medium Power Transistors [See More]
- Transistor Type: Power-BJT
from Integra Technologies, Inc.
#9632; GaN on SiC HEMT Technology. ■ POUT-PK > 500W @ 2.0ms / 20% / 50V. ■ 1.2-1.4GHz Instantaneous Operating Frequency Range. ■ Internal Impedance Pre-matched Device. ■ Depletion Mode Device. ■ Negative Gate Voltage and Bias Sequencing Required. ■ Specified... [See More]
- Transistor Type: Power-BJT; MOSFET RF
- Package Type: PL95A1
- Transistor Technology / Material: GaN
from Integra Technologies, Inc.
#9632; GaN on SiC HEMT Technology. ■ POUT-PK ≥ 380W @ 150us/10%/50V. ■ 1.21-1.40 GHz Instantaneous Operating Frequency Range. ■ Internal Impedance Input Pre-matched Device. ■ Depletion Mode Device. ■ Negative Gate Voltage and Bias Sequencing Required. ■... [See More]
- Transistor Type: Power-BJT; MOSFET RF
- Package Type: PL44C1
- Transistor Technology / Material: GaN
from Integra Technologies, Inc.
#9632; GaN on SiC HEMT Technology. ■ POUT-PK = 500W @ 100us/10%/50V. ■ 1.2-1.4GHz Instantaneous Operating Frequency Range. ■ Internal Impedance Pre-matched Device. ■ Depletion Mode Device. ■ Negative Gate Voltage and Bias Sequencing Required. ■ Specified For Use... [See More]
- Transistor Type: Power-BJT; MOSFET RF
- Package Type: PL44C1
- Transistor Technology / Material: GaN
from Integra Technologies, Inc.
#9632; GaN on SiC HEMT Technology. ■ POUT-PK ≥ 600W @ 150us/10%/50V. ■ 1.2-1.4GHz Instantaneous Operating Frequency Range. ■ Internal Impedance Pre-matched Device. ■ Depletion Mode Device. ■ Negative Gate Voltage and Bias Sequencing Required. ■ Specified For... [See More]
- Transistor Type: Power-BJT; MOSFET RF
- Package Type: PL64A1
- Transistor Technology / Material: GaN
from Integra Technologies, Inc.
#9632; GaN on SiC HEMT Technology. ■ POUT-PK ≥ 650W @ 300us/10%/50V. ■ 1.2-1.4GHz Instantaneous Operating Frequency Range. ■ Internal Impedance Pre-matched Device. ■ Depletion Mode Device. ■ Negative Gate Voltage and Bias Sequencing Required. ■ Specified For... [See More]
- Transistor Type: Power-BJT; MOSFET RF
- Package Type: PL95A1
- Transistor Technology / Material: GaN
from Integra Technologies, Inc.
#9632; GaN on SiC HEMT Technology. ■ POUT-PK ≥ 160W @ 100us/10%/50V. ■ 420 to 450 Operating Frequency. ■ Internal Input Impedance Pre-matched Device. ■ No Internal Output Match for Efficiency Optimization. ■ Depletion Mode Device - Negative Gate Voltage and Bias... [See More]
- Transistor Type: Power-BJT; MOSFET RF
- Package Type: PL44C1
- Transistor Technology / Material: GaN