DRAM Memory Chips
Description
Dynamic Random Access Memory (DRAM) is a type of semiconductor memory that stores data in memory cells consisting of capacitors and transistors. It is designed to hold a large amount of data in a compact space, making it a popular choice for various digital systems. DRAM is characterized by its ability to be read and written at any time, providing flexibility in data handling.
Working Principle
DRAM operates by storing logic levels as charges on capacitors. Each memory cell in a DRAM chip consists of a capacitor and a transistor. The capacitor holds a charge to represent a binary '1' or no charge for a binary '0'. The transistor acts as a switch that allows the control circuitry to read or write data to the capacitor. Due to the nature of capacitors, the stored charge tends to leak over time, necessitating periodic refreshing to maintain data integrity. This refreshing process is a key aspect of DRAM's operation, ensuring that the data remains accurate and accessible.
Applications
DRAM is widely used in computing devices where large amounts of volatile memory are required. Specific examples include:
- Personal computers and laptops, where DRAM serves as the main memory, allowing for quick access to data and applications.
- Servers and data centers, which utilize DRAM for high-speed data processing and storage.
- Graphics cards, where DRAM is used as video memory to handle complex graphics rendering tasks.
Advantages over other Memory Chips
One of the primary advantages of DRAM over other types of memory, such as Static RAM (SRAM), is its higher density, which allows for more data to be stored in a smaller physical space. This makes DRAM more cost-effective for applications requiring large memory capacities. Additionally, DRAM consumes less power than SRAM, making it suitable for devices where energy efficiency is a concern.
Limitations
DRAM has several limitations, including the need for periodic refreshing due to charge leakage, which can introduce latency and complexity in memory management. Additionally, DRAM is generally slower than SRAM in terms of access speed, which can impact performance in time-sensitive applications.
Considerations
When considering DRAM for a particular application, several factors should be taken into account:
- Initial Costs: DRAM is generally more affordable than SRAM, making it a cost-effective choice for large memory requirements.
- Operating Expense: The power consumption of DRAM is lower than that of SRAM, which can reduce operating costs in energy-sensitive environments.
- Durability: DRAM's reliance on capacitors means that it may be less durable over time compared to non-volatile memory types, as the capacitors can degrade.
- Accuracy: The need for periodic refreshing can affect the accuracy of data retrieval if not managed properly.
- Replacement and Maintenance Costs: DRAM modules are relatively easy to replace, but the need for refreshing and potential degradation over time may lead to higher maintenance costs compared to non-volatile memory solutions.
from Rochester Electronics
4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) [See More]
- Memory Category: DRAM Chip
- Package Type: DIP; CDIP16
from Micross Components, Inc.
Memory Products Offered: MRAM. SRAM. nvSRAM. VRAM. SDRAM. UVEPROM. DRAM. EEPROM. FRAM. Flash [See More]
- Memory Category: DRAM; DRAM Chip
- Package Type: 18CDIP, 20CLCC
- Density: 8000
- Supply Voltage: 5V; 5
from ERSAELECTRONICS PTE. LTD.
IC DRAM 2GBIT 1.066GHZ 96FBGA Product overview: AS4C128M16D3C-93BCN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing... [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: BGA; Tray
- Address Bus Width: 16
- Supply Voltage: 1.425V ~ 1.575V
from DigiKey
SDRAM Memory IC 16Mb (1M x 16) Parallel 143MHz 5.4ns 50-TSOP II [See More]
- Memory Category: DRAM Chip
- Package Type: TSOP; "50-TSOP (0.400"", 10.16mm Width)"
- Density: 16000
- Supply Voltage: 3V ~ 3.6V
from Win Source Electronics
Category: DRAM. Manufacturer: Micron Technology Inc. [See More]
- Memory Category: DRAM Chip
from RS Components, Ltd.
Winbond, W949D6DBHX5I [See More]
- Memory Category: DRAM Chip
- Address Bus Width: 15
- Bits per Word: 8
- Data Bus Width: 16
from ODG (Origin Data Global)
DRAM CONTROLLER, 64M X 16, CMOS, [See More]
- Memory Category: DRAM Chip
- Supply Voltage: 1V ~ 1.1V, 1.425V ~ 1.575V
- Package Type: 998-BGA, FCBGA
from Rochester Electronics
4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) [See More]
- Memory Category: DRAM Chip
- Package Type: CLCC18
from ERSAELECTRONICS PTE. LTD.
IC DRAM 4GBIT 1.066GHZ 96FBGA Product overview: AS4C256M16D3C-93BCN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing... [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: BGA; Tray
- Address Bus Width: 16
- Supply Voltage: 1.425V ~ 1.575V
from DigiKey
SDRAM Memory IC 256Mb (8M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13) [See More]
- Memory Category: DRAM Chip
- Package Type: 90-TFBGA
- Density: 256000
- Supply Voltage: 3V ~ 3.6V
from Win Source Electronics
Category: Integrated Circuits (ICs) >Memory. Package: Tape & Reel. Standard Package: 1,000. Mounting: SMD (SMT). Technology: SDRAM. Memory Type: Volatile. Memory Size: 128Mb (4M x 32). Access Time: 5.4 ns. Voltage - Supply: 3V ~ 3.6V. Package / Case: 90-VFBGA. Supplier Device Package:... [See More]
- Memory Category: Volatile; DRAM Chip
- Access Time: 5.4
- Supply Voltage: 3V ~ 3.6V
- Cycle Time: 12
from RS Components, Ltd.
Winbond, W9825G6KH-6I [See More]
- Memory Category: DRAM Chip
- Address Bus Width: 15
- Bits per Word: 8
- Data Bus Width: 16
from ODG (Origin Data Global)
IC DRAM 2GBIT PARALLEL 84FBGA [See More]
- Memory Category: SDRAM - DDR2; DRAM Chip
- Package Type: 84-TFBGA
- Density: 2000000
- Supply Voltage: 1.7V ~ 1.9V
from Rochester Electronics
IS42S16160 - 256M, 3.3V, SDRAM, 16Mx16, 166Mhz, 54 ball BGA (8mmx8mm) [See More]
- Memory Category: DRAM Chip
- Package Type: BGA; BGA54
from ERSAELECTRONICS PTE. LTD.
RLDRAM3-1600 1.125Gb 32Mx36 800MHz Product overview: MT44K32M36RCT-125E:A from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers... [See More]
- Memory Category: DRAM Chip
from DigiKey
SDRAM Memory IC 512Mb (32M x 16) Parallel 133MHz 5.4ns 54-TSOP II [See More]
- Memory Category: DRAM Chip
- Package Type: TSOP; "54-TSOP (0.400"", 10.16mm Width)"
- Density: 512000
- Supply Voltage: 3V ~ 3.6V
from Win Source Electronics
Category: Integrated Circuits (ICs) >Memory. Package: Tape & Reel. Mounting: SMD (SMT). Technology: SDRAM - Mobile LPSDR. Memory Type: Volatile. Memory Size: 512Mb (16M x 32). Access Time: 5.4 ns. Voltage - Supply: 1.7V ~ 1.95V. Package / Case: 90-VFBGA. Supplier Device Package: 90-VFBGA... [See More]
- Memory Category: Volatile; DRAM Chip
- Access Time: 5.4
- Supply Voltage: 1.7V ~ 1.95V
- Cycle Time: 15
from RS Components, Ltd.
Winbond, W9864G6KH-6I [See More]
- Memory Category: DRAM Chip
- Address Bus Width: 14
- Bits per Word: 8
- Data Bus Width: 16
from ODG (Origin Data Global)
IC DRAM 2GBIT PARALLEL 96FBGA [See More]
- Memory Category: SDRAM - DDR3; DRAM Chip
- Package Type: 96-TFBGA
- Density: 2000000
- Supply Voltage: 1.425V ~ 1.575V
from Rochester Electronics
IS42S16160 - 256M, 3.3V, SDRAM, 16Mx16, 166MHz, 54 pin TSOP II [See More]
- Memory Category: DRAM Chip
- Package Type: SOP; TSOP; TSOP54
from ERSAELECTRONICS PTE. LTD.
RLDRAM3 32Mx36 (1.125Gb) Product overview: MT44K32M36RB-107EIT:A from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing... [See More]
- Memory Category: DRAM Chip
from DigiKey
SDRAM Memory IC 64Mb (4M x 16) Parallel 143MHz 5.4ns 54-TFBGA (8x8) [See More]
- Memory Category: DRAM Chip
- Package Type: 54-TFBGA
- Density: 64000
- Supply Voltage: 3V ~ 3.6V
from Win Source Electronics
Category: Integrated Circuits (ICs) >Memory. Series: Automotive, AEC-Q100. Package: Tape & Reel. Standard Package: 2,000. Mounting: SMD (SMT). Technology: SDRAM - DDR3L. Memory Type: Volatile. Memory Size: 1Gb (64M x 16). Access Time: 20 ns. Voltage - Supply: 1.283V ~ 1.45V. Package / Case:... [See More]
- Memory Category: Volatile; DRAM Chip
- Access Time: 20
- Supply Voltage: 1.283V ~ 1.45V
- Operating Temperature: -40 to 105
from RS Components, Ltd.
S27KS0643GABHV020 [See More]
- Memory Category: DRAM Chip
- Bits per Word: 8
- Number of Words: 8
- Address Bus Width: 16
from ODG (Origin Data Global)
IC DRAM 2GBIT 800MHZ 96FBGA [See More]
- Memory Category: SDRAM - DDR3L; DRAM Chip
- Package Type: 96-VFBGA
- Density: 2000000
- Supply Voltage: 1.283V ~ 1.45V
from Rochester Electronics
IS42S32160 - 512M, 3.3V, SDRAM, 16Mx32, 166MHz, 90 ball BGA (8mmx13mm), [See More]
- Memory Category: DRAM Chip
- Package Type: BGA; BGA90
from ERSAELECTRONICS PTE. LTD.
DRAM Chip Mobile LPDDR4 SDRAM 4Gbit 128Mx32 1.1V/1.8V 200-Pin WFBGA Product overview: W66CL2NQUAFI from Winbond Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is... [See More]
- Memory Category: DRAM Chip
- Number of Words: 16000
- Density: 4000000
- Address Bus Width: 17
from DigiKey
SDRAM - Mobile LPDDR Memory IC 256Mb (16M x 16) Parallel 166MHz 60-FBGA (8x9) [See More]
- Memory Category: DRAM Chip
- Package Type: 60-TFBGA
- Density: 256000
- Supply Voltage: 1.7V ~ 1.95V
from Win Source Electronics
Category: Integrated Circuits (ICs) >Memory. Package: Tray. Standard Package: 1,000. Mounting: SMD (SMT). Technology: SDRAM - Mobile LPDDR. Memory Type: Volatile. Memory Size: 4Gb (128M x 32). Access Time: 5 ns. Voltage - Supply: 1.7V ~ 1.95V. Package / Case: 240-WFBGA. Supplier Device Package:... [See More]
- Memory Category: Volatile; DRAM Chip
- Access Time: 5
- Supply Voltage: 1.7V ~ 1.95V
- Cycle Time: 15
from RS Components, Ltd.
ALLIANCE, DRAM DDR2, 2G, 128Mx16, 1.8V [See More]
- Memory Category: DRAM Chip
- Address Bus Width: 13
- Bits per Word: 16
- Data Bus Width: 16
from ODG (Origin Data Global)
IC DRAM 4GBIT PARALLEL 134FBGA [See More]
- Memory Category: SDRAM - Mobile LPDDR2; DRAM Chip
- Package Type: 134-VFBGA
- Density: 4000000
- Supply Voltage: 1.14V ~ 1.95V
from Rochester Electronics
S70KL1283 - 128 Mb (16 MB), HyperRAM Self-Refresh DRAM [See More]
- Memory Category: DRAM Chip
- Package Type: BGA; PG-BGA-24
from ERSAELECTRONICS PTE. LTD.
IC DRAM 4GBIT PAR 1.2GHZ 96FBGA Product overview: AS4C256M16D4-83BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing... [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: BGA; Tray
- Address Bus Width: 16
- Supply Voltage: 1.14V ~ 1.26V
from DigiKey
SDRAM - DDR3L Memory IC 4Gb (512M x 8) Parallel 800MHz 20ns 78-FBGA (9x10.5) [See More]
- Memory Category: DRAM Chip
- Supply Voltage: 1.283V ~ 1.45V
- Package Type: 78-TFBGA
- Operating Temperature: -40 to 105
from Win Source Electronics
Category: Integrated Circuits (ICs) >Memory. Package: Tape & Reel (TR). Standard Package: 2,000. Mounting: SMD (SMT). Technology: SDRAM - DDR3L. Memory Type: Volatile. Memory Size: 4Gb (256M x 16). Access Time: 20 ns. Voltage - Supply: 1.283V ~ 1.45V. Package / Case: 96-TFBGA. Supplier Device... [See More]
- Memory Category: Volatile; DRAM Chip
- Access Time: 20
- Supply Voltage: 1.283V ~ 1.45V
- Operating Temperature: 0 to 95
from RS Components, Ltd.
ALLIANCE, DRAM DDR2, 2G, 128Mx16, 1.8V [See More]
- Memory Category: DRAM Chip
- Address Bus Width: 13
- Bits per Word: 16
- Data Bus Width: 16
from ODG (Origin Data Global)
IC DRAM 1GBIT PARALLEL 78FBGA [See More]
- Memory Category: SDRAM - DDR3; DRAM Chip
- Package Type: 78-VFBGA
- Density: 1000000
- Supply Voltage: 1.425V ~ 1.575V
from Rochester Electronics
S70KS1282 - 128 Mb (16 MB), HyperRAM Self-Refresh DRAM [See More]
- Memory Category: DRAM Chip
- Package Type: BGA; PG-BGA-24
from ERSAELECTRONICS PTE. LTD.
IC DRAM 4GBIT PAR 1.2GHZ 78FBGA Product overview: AS4C512M8D4-83BIN from Alliance Memory, Inc. is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing... [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: BGA; Tray
- Address Bus Width: 8
- Supply Voltage: 1.14V ~ 1.26V
from DigiKey
SDRAM - DDR2 Memory IC 2Gb (128M x 16) Parallel 400MHz 400ps 84-FBGA (9x12.5) [See More]
- Memory Category: DRAM Chip
- Supply Voltage: 1.7V ~ 1.9V
- Package Type: 84-TFBGA
- Operating Temperature: -40 to 85
from Win Source Electronics
Category: Integrated Circuits (ICs) >Memory. Package: Tape & Reel. Standard Package: 2,000. Mounting: SMD (SMT). Technology: SDRAM - DDR4. Memory Type: Volatile. Memory Size: 8Gb (1G x 8). Voltage - Supply: 1.14V ~ 1.26V. Package / Case: 78-TFBGA. Supplier Device Package: 78-FBGA (8x12). [See More]
- Memory Category: Volatile; DRAM Chip
- Operating Temperature: -40 to 95
- Supply Voltage: 1.14V ~ 1.26V
from RS Components, Ltd.
ALLIANCE, DRAM, 256M, 16MX16, 3.3V [See More]
- Memory Category: DRAM Chip
- Number of Words: 4000
- Density: 2048000
- Bits per Word: 16
from ODG (Origin Data Global)
IC DRAM 256MBIT PARALLEL 54TFBGA [See More]
- Memory Category: SDRAM; DRAM Chip
- Package Type: 54-TFBGA
- Density: 256000
- Supply Voltage: 3V ~ 3.6V
from Rochester Electronics
TMS4030JL - TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 [See More]
- Memory Category: DRAM Chip
- Package Type: DIP; CDIP
from ERSAELECTRONICS PTE. LTD.
IC DRAM 4GBIT PAR 1.2GHZ 96FBGA Product overview: EDY4016AABG-DR-F-D from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing... [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: 1.14V ~ 1.26V
- Package Type: BGA; Tray
- Operating Temperature: 0 to 95
from DigiKey
SDRAM - DDR Memory IC 512Mb (32M x 16) Parallel 200MHz 700ps 60-FBGA (8x12.5) [See More]
- Memory Category: DRAM Chip
- Package Type: 60-TFBGA
- Density: 512000
- Supply Voltage: 2.5V ~ 2.7V
from Win Source Electronics
Category: Integrated Circuits (ICs) >Memory. Package: Tray. Standard Package: 1,360. Technology: SDRAM - Mobile LPDDR4. Memory Type: Volatile. Memory Size: 32Gb (1G x 32). Voltage - Supply: 1.1V. Temperature Range - Operating: -30 °C ~ 85 °C (TC). Memory Format: DRAM. Clock Frequency:... [See More]
- Memory Category: Volatile; DRAM Chip
- Operating Temperature: -30 to 85
- Supply Voltage: 1.1V
from RS Components, Ltd.
ALLIANCE DRAM, 256M, 16MX16, 3.3V [See More]
- Memory Category: DRAM Chip
- Number of Words: 4000
- Density: 2048000
- Bits per Word: 16
from ODG (Origin Data Global)
IC DRAM 256MBIT PAR 54TSOP II [See More]
- Memory Category: SDRAM; DRAM Chip
- Package Type: 54-TSOP (0.400", 10.16mm Width)
- Density: 256000
- Supply Voltage: 3V ~ 3.6V
from ERSAELECTRONICS PTE. LTD.
IC DRAM 4GBIT PAR 1.2GHZ 96TWBGA Product overview: IS43QR16256A-083RBL from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers... [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: 1.14V ~ 1.26V
- Package Type: BGA; Tray
- Operating Temperature: 0 to 95
from DigiKey
SDRAM - DDR Memory IC 256Mb (16M x 16) Parallel 200MHz 700ps 66-TSOP II [See More]
- Memory Category: DRAM Chip
- Package Type: TSSOP; "66-TSSOP (0.400"", 10.16mm Width)"
- Density: 256000
- Supply Voltage: 2.5V ~ 2.7V
from Win Source Electronics
Category: Integrated Circuits (ICs) >Memory. Package: Tape & Reel (TR). Standard Package: 1,000. Mounting: SMD (SMT). Technology: SDRAM - DDR3. Memory Type: Volatile. Memory Size: 1Gb (64M x 16). Voltage - Supply: 1.425V ~ 1.575V. Package / Case: 96-TFBGA. Supplier Device Package: 96-FBGA... [See More]
- Memory Category: Volatile; DRAM Chip
- Operating Temperature: 0 to 95
- Supply Voltage: 1.425V ~ 1.575V
from RS Components, Ltd.
ALLIANCE DRAM, 256MB, 16 M X 16, 3.3 V [See More]
- Memory Category: DRAM Chip
- Number of Words: 4000
- Density: 2048000
- Bits per Word: 16
from ODG (Origin Data Global)
IC DRAM 8GBIT PARALLEL 78FBGA [See More]
- Memory Category: SDRAM - DDR3L; DRAM Chip
- Package Type: 78-TFBGA
- Density: 8000000
- Supply Voltage: 1.283V ~ 1.45V
from ERSAELECTRONICS PTE. LTD.
IC DRAM 4GBIT PAR 1.2GHZ 96TWBGA Product overview: IS43QR16256A-083RBLI-TR from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for... [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: 1.14V ~ 1.26V
- Package Type: BGA; Tape & Reel (TR)
- Cycle Time: 15
from DigiKey
SDRAM Memory IC 256Mb (16M x 16) Parallel 167MHz 5.4ns 54-VFBGA (8x8) [See More]
- Memory Category: DRAM Chip
- Package Type: 54-LFBGA
- Density: 256000
- Supply Voltage: 3V ~ 3.6V
from Win Source Electronics
Category: Integrated Circuits (ICs) >Memory. Series: Automotive, AEC-Q100. Package: Tray. Standard Package: 1,782. Mounting: SMD (SMT). Technology: SDRAM - Mobile LPDDR. Memory Type: Volatile. Memory Size: 512Mb (32M x 16). Access Time: 5 ns. Voltage - Supply: 1.7V ~ 1.95V. Package / Case:... [See More]
- Memory Category: Volatile; DRAM Chip
- Access Time: 5
- Supply Voltage: 1.7V ~ 1.95V
- Cycle Time: 15
from RS Components, Ltd.
ALLIANCE, DRAM, 256M, 16MX16, 3.3V [See More]
- Memory Category: DRAM Chip
- Number of Words: 4000
- Density: 2048000
- Bits per Word: 16
from ODG (Origin Data Global)
IC DRAM 4GBIT PARALLEL 96FBGA [See More]
- Memory Category: SDRAM - DDR3; DRAM Chip
- Package Type: 96-TFBGA
- Density: 4000000
- Supply Voltage: 1.425V ~ 1.575V
from ERSAELECTRONICS PTE. LTD.
IC DRAM 4GBIT PAR 1.2GHZ 96BGA Product overview: IS43QR16256B-083RBL from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers... [See More]
- Memory Category: DRAM Chip
- Number of Words: 32000
- Density: 4000000
- Address Bus Width: 17
from DigiKey
SDRAM Memory IC 64Mb (2M x 32) Parallel 167MHz 5.4ns 86-TSOP II [See More]
- Memory Category: DRAM Chip
- Package Type: "86-TFSOP (0.400"", 10.16mm Width)"
- Density: 64000
- Supply Voltage: 3V ~ 3.6V
from Win Source Electronics
Category: Integrated Circuits (ICs) >Memory. Package: Tray. Standard Package: 1,000. Mounting: SMD (SMT). Technology: SDRAM - Mobile LPDDR2. Memory Type: Volatile. Memory Size: 512Mb (32M x 16). Voltage - Supply: 1.14V ~ 1.95V. Package / Case: 121-WFBGA. Supplier Device Package: 121-FBGA (6.5x8). [See More]
- Memory Category: Volatile; DRAM Chip
- Operating Temperature: -30 to 85
- Supply Voltage: 1.14V ~ 1.95V
from RS Components, Ltd.
ALLIANCE, DRAM, 256M, 16MX16, 3.3V [See More]
- Memory Category: DRAM Chip
- Number of Words: 4000
- Density: 2048000
- Bits per Word: 16
from ODG (Origin Data Global)
IC DRAM 2GBIT PARALLEL 78FBGA [See More]
- Memory Category: SDRAM - DDR3L; DRAM Chip
- Package Type: 78-VFBGA
- Density: 2000000
- Supply Voltage: 1.283V ~ 1.45V
from ERSAELECTRONICS PTE. LTD.
IC DRAM 16GBIT PAR 1.2GHZ 96FBGA Product overview: MT40A1G16HBA-083E:A from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing... [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: 1.14V ~ 1.26V
- Package Type: BGA; Tray
- Operating Temperature: 0 to 95
from DigiKey
SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 333MHz 450ps 60-FBGA (8x10) [See More]
- Memory Category: DRAM Chip
- Supply Voltage: 1.7V ~ 1.9V
- Package Type: 60-TFBGA
- Operating Temperature: 0 to 85
from Win Source Electronics
Category: Integrated Circuits (ICs) >Memory. Series: Automotive, AEC-Q100. Package: Tape & Reel (TR). Standard Package: 1,000. Mounting: SMD (SMT). Technology: SDRAM - DDR3L. Memory Type: Volatile. Memory Size: 4Gb (256M x 16). Access Time: 13.75 ns. Voltage - Supply: 1.283V ~ 1.45V. Package... [See More]
- Memory Category: Volatile; DRAM Chip
- Access Time: 13.75
- Supply Voltage: 1.283V ~ 1.45V
- Operating Temperature: -40 to 95
from RS Components, Ltd.
ALLIANCE, DRAM DDR3L 1.35V, 512M, 32MX16 [See More]
- Memory Category: DRAM Chip
- Bits per Word: 16
- Density: 4096000
- Address Bus Width: 12
from ODG (Origin Data Global)
IC DRAM 64MBIT PARALLEL 90TFBGA [See More]
- Memory Category: SDRAM; DRAM Chip
- Package Type: 90-TFBGA
- Density: 64000
- Supply Voltage: 3V ~ 3.6V
from ERSAELECTRONICS PTE. LTD.
IC DRAM 16GBIT PAR 1.2GHZ 96FBGA Product overview: MT40A1G16WBU-083E:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing... [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: 1.14V ~ 1.26V
- Package Type: BGA; Tray
- Operating Temperature: 0 to 95
from DigiKey
SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 400MHz 400ps 84-FBGA (8x12.5) [See More]
- Memory Category: DRAM Chip
- Supply Voltage: 1.7V ~ 1.9V
- Package Type: 84-TFBGA
- Operating Temperature: 0 to 85
from Win Source Electronics
Category: Integrated Circuits (ICs) >Memory. Package: Tape & Reel (TR). Standard Package: 1,000. Mounting: SMD (SMT). Technology: SDRAM. Memory Type: Volatile. Memory Size: 128Mb (8M x 16). Access Time: 5.4 ns. Voltage - Supply: 3V ~ 3.6V. Package / Case: 54-TSOP (0.400", 10.16mm Width). [See More]
- Memory Category: Volatile; DRAM Chip
- Access Time: 5.4
- Supply Voltage: 3V ~ 3.6V
- Cycle Time: 12
from RS Components, Ltd.
ALLIANCE, DRAM DDR3L 1.35V, 512M, 32MX16 [See More]
- Memory Category: DRAM Chip
- Bits per Word: 16
- Density: 4096000
- Address Bus Width: 12
from ODG (Origin Data Global)
IC DRAM 64MBIT PAR 86TSOP II [See More]
- Memory Category: SDRAM; DRAM Chip
- Package Type: 86-TFSOP (0.400", 10.16mm Width)
- Density: 64000
- Supply Voltage: 3V ~ 3.6V
from ERSAELECTRONICS PTE. LTD.
IC DRAM 4GBIT PAR 1.2GHZ 78FBGA Product overview: MT40A1G4HX-083E:A from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing... [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: 1.14V ~ 1.26V
- Package Type: BGA; Tray
- Operating Temperature: 0 to 95
from DigiKey
SDRAM - DDR3 Memory IC 512Mb (64M x 8) Parallel 800MHz 20ns 78-FBGA (8x10.5) [See More]
- Memory Category: DRAM Chip
- Package Type: 78-VFBGA
- Density: 512000
- Supply Voltage: 1.425V ~ 1.575V
from Win Source Electronics
Category: Integrated Circuits (ICs) >Memory. Package: Tray. Standard Package: 1,000. Mounting: SMD (SMT). Technology: SDRAM - Mobile LPDDR. Memory Type: Volatile. Memory Size: 2Gb (64M x 32). Access Time: 5 ns. Voltage - Supply: 1.7V ~ 1.95V. Package / Case: 168-VFBGA. Supplier Device Package:... [See More]
- Memory Category: Volatile; DRAM Chip
- Access Time: 5
- Supply Voltage: 1.7V ~ 1.95V
- Cycle Time: 15
from RS Components, Ltd.
ALLIANCE DRAM, 512M, 32MX16, 3.3V, SDRAM [See More]
- Memory Category: DRAM Chip
- Number of Words: 8
- Density: 4096000
- Bits per Word: 16
from ODG (Origin Data Global)
IC DRAM 512MBIT PAR 66TSOP II [See More]
- Memory Category: SDRAM - DDR; DRAM Chip
- Package Type: 66-TSSOP (0.400", 10.16mm Width)
- Density: 512000
- Supply Voltage: 2.3V ~ 2.7V
from ERSAELECTRONICS PTE. LTD.
IC DRAM 4GBIT PAR 1.2GHZ 78FBGA Product overview: MT40A1G4RH-083E:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing... [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: 1.14V ~ 1.26V
- Package Type: BGA; Tray
- Operating Temperature: 0 to 95
from DigiKey
IC DRAM 2GBIT PARALLEL 96FBGA [See More]
- Memory Category: DRAM Chip
- Package Type: 96-TFBGA
from Win Source Electronics
Category: Integrated Circuits (ICs) >Memory. Package: Tray. Standard Package: 1,000. Mounting: SMD (SMT). Technology: SDRAM - DDR. Memory Type: Volatile. Memory Size: 512Mb (64M x 8). Access Time: 750 ps. Voltage - Supply: 2.3V ~ 2.7V. Package / Case: 60-TFBGA. Supplier Device Package: 60-FBGA... [See More]
- Memory Category: Volatile; DRAM Chip
- Access Time: 0.7500
- Supply Voltage: 2.3V ~ 2.7V
- Cycle Time: 15
from RS Components, Ltd.
ALLIANCE DRAM, 512M, 32MX16, 3.3V, SDRAM [See More]
- Memory Category: DRAM Chip
- Number of Words: 8
- Density: 4096000
- Bits per Word: 16
from ODG (Origin Data Global)
IC DRAM 512MBIT PARALLEL 84TFBGA [See More]
- Memory Category: SDRAM - DDR2; DRAM Chip
- Package Type: 84-TFBGA
- Density: 512000
- Supply Voltage: 1.7V ~ 1.9V
from ERSAELECTRONICS PTE. LTD.
IC DRAM 8GBIT PAR 1.2GHZ 78FBGA Product overview: MT40A1G8PM-083E:A from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing... [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: 1.14V ~ 1.26V
- Package Type: BGA; Tray
- Operating Temperature: 0 to 95
from DigiKey
IC DRAM 512MBIT PARALLEL 90FBGA [See More]
- Memory Category: DRAM Chip
- Package Type: 90-VFBGA
- Density: 512000
- Supply Voltage: 1.7V ~ 1.95V
from Win Source Electronics
Category: Integrated Circuits (ICs) >Memory. Package: Tray. Standard Package: 1,000. Mounting: SMD (SMT). Technology: SDRAM - DDR. Memory Type: Volatile. Memory Size: 256Mb (32M x 8). Access Time: 700 ps. Voltage - Supply: 2.3V ~ 2.7V. Package / Case: 66-TSSOP (0.400", 10.16mm Width). Supplier... [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: 2.3V ~ 2.7V
- Package Type: SSOP
- Access Time: 0.7000
from RS Components, Ltd.
ALLIANCE DRAM 64M, 4MX16, 3.3V [See More]
- Memory Category: DRAM Chip
- Number of Words: 1000
- Density: 512000
- Bits per Word: 16
from ODG (Origin Data Global)
IC DRAM 512MBIT PARALLEL 60FBGA [See More]
- Memory Category: SDRAM - Mobile LPDDR; DRAM Chip
- Package Type: 60-VFBGA
- Density: 512000
- Supply Voltage: 1.7V ~ 1.9V
from ERSAELECTRONICS PTE. LTD.
IC DRAM 8GBIT PAR 1.2GHZ 78FBGA Product overview: MT40A1G8WE-083E AAT:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing... [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: 1.14V ~ 1.26V
- Package Type: BGA; Tray
- Operating Temperature: -40 to 105
from DigiKey
LPDDR4X(0.6V), 16GB (X16), 2133M [See More]
- Memory Category: DRAM Chip
- Supply Voltage: 1.06V ~ 1.17V, 1.7V ~ 1.95V
- Package Type: 200-VFBGA
- Operating Temperature: -40 to 85
from Win Source Electronics
Category: Integrated Circuits (ICs) >Memory. Package: Tray. Standard Package: 1,000. Mounting: SMD (SMT). Technology: SDRAM - Mobile LPDDR. Memory Type: Volatile. Memory Size: 8Gb (256M x 32). Access Time: 5 ns. Voltage - Supply: 1.7V ~ 1.95V. Package / Case: 168-VFBGA. Supplier Device Package:... [See More]
- Memory Category: Volatile; DRAM Chip
- Access Time: 5
- Supply Voltage: 1.7V ~ 1.95V
- Cycle Time: 15
from RS Components, Ltd.
ALLIANCE, DRAM, 64M, 4Mx16, 3.3V, SDRAM [See More]
- Memory Category: DRAM Chip
- Number of Words: 1000
- Density: 512000
- Bits per Word: 16
from ODG (Origin Data Global)
IC DRAM 512MBIT PARALLEL 54FBGA [See More]
- Memory Category: SDRAM - Mobile SDRAM; DRAM Chip
- Package Type: 54-VFBGA
- Density: 512000
- Supply Voltage: 1.7V ~ 1.95V
from ERSAELECTRONICS PTE. LTD.
IC DRAM 8GBIT PAR 1.2GHZ 78FBGA Product overview: MT40A1G8WE-083E IT:B TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers... [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: 1.14V ~ 1.26V
- Package Type: BGA; Tape & Reel (TR)
- Operating Temperature: -40 to 95
from DigiKey
SDRAM - DDR3 Memory IC 4Gb (256M x 16) Parallel 933MHz 20ns 96-FBGA (7.5x13.5) [See More]
- Memory Category: DRAM Chip
- Supply Voltage: 1.425V ~ 1.575V
- Package Type: 96-TFBGA
- Operating Temperature: 0 to 95
from Win Source Electronics
Category: Integrated Circuits (ICs) >Memory. Package: Tray. Standard Package: 1,360. Mounting: SMD (SMT). Technology: SDRAM - Mobile LPDDR4. Memory Type: Volatile. Memory Size: 16Gb (512M x 32). Voltage - Supply: 1.1V. Package / Case: 200-WFBGA. Supplier Device Package: 200-WFBGA (10x14.5). [See More]
- Memory Category: Volatile; DRAM Chip
- Operating Temperature: -30 to 85
- Supply Voltage: 1.1V
from RS Components, Ltd.
ALLIANCE DRAM 64M, 4MX16, SDRAM [See More]
- Memory Category: DRAM Chip
- Number of Words: 1000
- Density: 512000
- Bits per Word: 16
from ODG (Origin Data Global)
IC DRAM 512MBIT PAR 54TSOP II [See More]
- Memory Category: SDRAM; DRAM Chip
- Package Type: 54-TFBGA
- Density: 512000
- Supply Voltage: 3V ~ 3.6V
from ERSAELECTRONICS PTE. LTD.
IC DRAM 4GBIT PAR 1.2GHZ 96FBGA Product overview: MT40A256M16GE-083E AAT:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers... [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: 1.14V ~ 1.26V
- Package Type: BGA; Tray
- Operating Temperature: -40 to 105
from DigiKey
IC DRAM 1GBIT SSTL 2 60FBGA [See More]
- Memory Category: DRAM Chip
- Supply Voltage: 2.3V ~ 2.7V
- Package Type: 60-TFBGA
- Operating Temperature: -40 to 85
from Win Source Electronics
Category: Integrated Circuits (ICs) >Memory. Package: Tape & Reel. Standard Package: 1,000. Mounting: SMD (SMT). Technology: SDRAM - Mobile LPDDR. Memory Type: Volatile. Memory Size: 512Mb (16M x 32). Access Time: 5 ns. Voltage - Supply: 1.7V ~ 1.95V. Package / Case: 90-VFBGA. Supplier Device... [See More]
- Memory Category: Volatile; DRAM Chip
- Access Time: 5
- Supply Voltage: 1.7V ~ 1.95V
- Cycle Time: 15
from RS Components, Ltd.
ALLIANCE DRAM, 128M, 8MX16, 3.3V, SDRAM [See More]
- Memory Category: DRAM Chip
- Number of Words: 2000
- Density: 1024000
- Bits per Word: 16
from ODG (Origin Data Global)
DRAM DDR3L, 8G, 512M X 16, 1.35V [See More]
- Memory Category: SDRAM - DDR3L; DRAM Chip
- Package Type: 96-TFBGA
- Density: 8000000
- Supply Voltage: 1.283V ~ 1.45V
from ERSAELECTRONICS PTE. LTD.
IC DRAM 4GBIT PAR 1.2GHZ 96FBGA Product overview: MT40A256M16GE-083E AUT:B TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers... [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: 1.14V ~ 1.26V
- Package Type: BGA; Tape & Reel (TR)
- Operating Temperature: -40 to 125
from DigiKey
DDR3L, 1GB, 64M X 16, 1.35V, 96- [See More]
- Memory Category: DRAM Chip
- Supply Voltage: 1.283V ~ 1.45V
- Package Type: 96-VFBGA
- Operating Temperature: 0 to 95
from Win Source Electronics
Category: Integrated Circuits (ICs) >Memory. Package: Tape & Reel. Standard Package: 1,000. Mounting: SMD (SMT). Technology: SDRAM - DDR2. Memory Type: Volatile. Memory Size: 256Mb (64M x 4). Access Time: 500 ps. Voltage - Supply: 1.7V ~ 1.9V. Package / Case: 60-FBGA. Supplier Device Package:... [See More]
- Memory Category: Volatile; DRAM Chip
- Access Time: 0.5000
- Supply Voltage: 1.7V ~ 1.9V
- Cycle Time: 15
from RS Components, Ltd.
ALLIANCE, DRAM, 128M, 8MX16, 3.3V [See More]
- Memory Category: DRAM Chip
- Number of Words: 2000
- Density: 1024000
- Bits per Word: 16
from ODG (Origin Data Global)
IC DRAM 4GBIT PARALLEL 78FBGA [See More]
- Memory Category: SDRAM - DDR4; DRAM Chip
- Package Type: 78-TFBGA
- Density: 4000000
- Supply Voltage: 1.14V ~ 1.26V
from ERSAELECTRONICS PTE. LTD.
IC DRAM 16GBIT PAR 1.2GHZ 78FBGA Product overview: MT40A2G8FSE-083E:A from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing... [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: 1.14V ~ 1.26V
- Package Type: BGA; Tray
- Operating Temperature: 0 to 95
from DigiKey
DDR4 (MICRON), 16GB, 1GX16, 1.2V [See More]
- Memory Category: DRAM Chip
- Supply Voltage: 1.14V ~ 1.26V
- Package Type: 96-TFBGA
- Operating Temperature: -40 to 95
from Win Source Electronics
Category: Integrated Circuits (ICs) >Memory. Series: Automotive, AEC-Q100. Package: Bulk. Standard Package: 1,000. Mounting: SMD (SMT). Technology: SDRAM. Memory Type: Volatile. Memory Size: 128Mb (16M x 8). Access Time: 5.4 ns. Voltage - Supply: 3V ~ 3.6V. Package / Case: 60-TFBGA. Supplier... [See More]
- Memory Category: Volatile; DRAM Chip
- Access Time: 5.4
- Supply Voltage: 3V ~ 3.6V
- Cycle Time: 12
from RS Components, Ltd.
ALLIANCE, DRAM, 128M. 8MX16, 3.3V [See More]
- Memory Category: DRAM Chip
- Number of Words: 2000
- Density: 1024000
- Bits per Word: 16
from ODG (Origin Data Global)
IC DRAM 512MBIT PARALLEL 60FBGA [See More]
- Memory Category: SDRAM - DDR2; DRAM Chip
- Package Type: 60-TFBGA
- Density: 512000
- Supply Voltage: 1.7V ~ 1.9V
from ERSAELECTRONICS PTE. LTD.
IC DRAM 16GBIT PAR 1.2GHZ 78FBGA Product overview: MT40A2G8NRE-083E:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing... [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: 1.14V ~ 1.26V
- Package Type: BGA; Tray
- Operating Temperature: 0 to 95
from DigiKey
MT40A1G16TD-062E:F [See More]
- Memory Category: DRAM Chip
- Supply Voltage: 1.14V ~ 1.26V
- Package Type: 96-TFBGA
- Operating Temperature: 0 to 95
from Win Source Electronics
Category: Integrated Circuits (ICs) >Memory. Package: Tray. Standard Package: 1,000. Mounting: SMD (SMT). Technology: SDRAM - Mobile LPDDR. Memory Type: Volatile. Memory Size: 4Gb (128M x 32). Access Time: 5 ns. Voltage - Supply: 1.7V ~ 1.95V. Package / Case: 168-WFBGA. Supplier Device Package:... [See More]
- Memory Category: Volatile; DRAM Chip
- Access Time: 5
- Supply Voltage: 1.7V ~ 1.95V
- Cycle Time: 15
from RS Components, Ltd.
1Gb DDR3 SDRAM,x16,IndustrialTemp.800MHz [See More]
- Memory Category: DRAM Chip
- Data Bus Width: 16
- Bits per Word: 16
- Package Type: VFBGA
from ODG (Origin Data Global)
IC DRAM 4GBIT PAR 96FBGA [See More]
- Memory Category: SDRAM - DDR3L; DRAM Chip
- Package Type: 96-TFBGA
- Density: 4000000
- Supply Voltage: 1.283V ~ 1.45V
from Twilight Technology Inc.
Twilight Technology, Inc. specializes in IC packaging and testing services focused on providing solutions for high reliability applications or obsolete components. Twilight Technology has manufactured and marketed a variety of standard and proprietary semiconductor packaging and memory module... [See More]
- Memory Category: DRAM Chip
from Lansdale Semiconductor, Inc.
The Series 54LS/74LS Schottky TTL family features both Schottky-barrier-diode inputs and emitter inputs and utilizes full Schottky-barrier-diode clamping to achieve speeds comparable to Series 54/74 at one-fifth of the power. They retain the desirable features of, and are completely compatible with,... [See More]
- Memory Category: DRAM Chip
- Pins: 16
- Package Type: DIP (optional feature); Lead Flat Pack
- Number of units in IC: 1
from Teledyne e2v Semiconductors
DDR4 ideal Companion-chips for Space grade devices such as processors, FPGAs SiP solutions & beyond …. The 4/8GB Radiation Tolerant DDR4 Memory Multi-Chip Package (MCP) is a Ultra High Density Memory Solution, targeting Space Embedded Systems & Applications. This space-grade DDR4... [See More]
- Memory Category: DRAM Chip
- Operating Temperature: -55 to 125
- Data Bus Width: 72
from Quarktwin Technology Ltd.
SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 84-FBGA (10.5x13.5) [See More]
- Memory Category: DRAM; DRAM Chip
- Package Type: BGA; 84-TFBGA
- Density: 2000000
- Supply Voltage: 1.7V ~ 1.9V
from Karl Kruse GmbH & Co. KG
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop... [See More]
- Memory Category: DRAM Chip
- Package Type: PDSO40
from Utmel Electronic Limited
128M, 3.3V, SDRAM, 8MX16, 143M [See More]
- Memory Category: Volatile; DRAM Chip
- Address Bus Width: 12
- Density: 1024000
- Package Type: 54-TFBGA
from Acme Chip Technology Co., Limited
IC DRAM 2GBIT PAR 96FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: 1.066 GHz
- Density: 2000000
- Supply Voltage: Surface Mount
from LCSC Electronics Technology (HK) Limited
FBGA-96 DDR SDRAM ROHS [See More]
- Memory Category: DRAM Chip
- Package Type: BGA
from Cypress Semiconductor Corp.
Cypress HyperBus Memory is a portfolio of high-speed, low-pin-count memory products that uses our HyperBus interface technology. The HyperBus interface draws upon the legacy features of both parallel and serial interface memories, while enhancing system performance, ease of design, and system... [See More]
- Memory Category: Flash; HyperBus based on Flash and DRAM; DRAM Chip
- Package Type: BGA
- Density: 64000 to 512000
- Pins: 24
from Lingto Electronic Limited
IC DRAM 2GBIT PARALLEL 84FBGA [See More]
- Memory Category: DRAM; DRAM Chip
- Density: 2000000
from GSI Technology
GSI's Low Latency DRAM (LLDRAM) is an ideal solution for advanced data networking applications. Its low Random Cycle Time (tRC), eight-bank memory array architecture, and double data rate transfers enable a level of performance unmatched by commodity DRAM. And its SRAM-like address interface makes... [See More]
- Memory Category: DRAM Chip
- Package Type: uBGA
- Density: 288000 to 576000
- Supply Voltage: 1.8V
from Radwell International
4GB, (1X4GB), DDR2 800, (PC2 6400), DESKTOP MEMORY MODULE, 240-PIN, DDR2, SDRAM, 1.8V, NON-ECC, UNBUFFERED. FREE 2 YEAR RADWELL WARRANTY [See More]
- Memory Category: DRAM Chip
from Shenzhen Shengyu Electronics Technology Limited
IC DRAM 256MBIT PAR 54TSOP II [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: -40degC ~ 105degC (TA)
- Density: 256000
- Data Rate: 166
from Quarktwin Technology Ltd.
SDRAM - DDR2 Memory IC 2Gbit SSTL_18 400 MHz 400 ps 84-TFBGA (8x12.5) [See More]
- Memory Category: DRAM; DRAM Chip
- Package Type: BGA; 84-TFBGA
- Density: 2000000
- Supply Voltage: 1.7V ~ 1.9V
from Utmel Electronic Limited
2Gbit FBGA-96 DDR SDRAM ROHS [See More]
- Memory Category: DRAM Chip
from Acme Chip Technology Co., Limited
IC DRAM 256MBIT LVTTL 54TFBGA [See More]
- Memory Category: DRAM; DRAM Chip
- Package Type: Not Verified
- Density: 16000
- Supply Voltage: Surface Mount
from LCSC Electronics Technology (HK) Limited
FBGA-96 DDR SDRAM ROHS [See More]
- Memory Category: DRAM Chip
- Package Type: BGA
from Lingto Electronic Limited
IC DRAM 2GBIT PARALLEL 84FBGA [See More]
- Memory Category: DRAM; DRAM Chip
- Density: 2000000
from Radwell International
DISCONTINUED BY MANUFACTURER, MEMORY MODULE, 512 MB, 400 MHZ, 2.5 V, PC-3200 BUS TYPE, 184 PIN, DDR SDRAM MEMORY TYPE. FREE 2 YEAR RADWELL WARRANTY [See More]
- Memory Category: DRAM Chip
from Shenzhen Shengyu Electronics Technology Limited
IC DRAM 256MBIT PAR 54TFBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: BGA
- Density: 256000
- Supply Voltage: 0degC ~ 70degC (TA)
from Quarktwin Technology Ltd.
SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 84-FBGA (10.5x13.5) [See More]
- Memory Category: DRAM; DRAM Chip
- Package Type: BGA; 84-TFBGA
- Density: 2000000
- Supply Voltage: 1.7V ~ 1.9V
from Utmel Electronic Limited
64M, 3.3V, SDRAM, 4MX16, 143MH [See More]
- Memory Category: Volatile; DRAM Chip
- Address Bus Width: 16
- Density: 67109
- Package Type: 54-TSOP (0.400, 10.16mm Width)
from Acme Chip Technology Co., Limited
IC DRAM 8GBIT PAR 78FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: BGA; 78-FBGA (9x10.5)
- Density: 8000000
- Supply Voltage: 0degC ~ 95degC (TC)
from LCSC Electronics Technology (HK) Limited
4Gbit SDRAM DDR4 1.2GHz FBGA-96 DDR SDRAM ROHS [See More]
- Memory Category: DRAM Chip
- Package Type: BGA
- Density: 4000000
- Supply Voltage: 1.14V~1.26V
from Lingto Electronic Limited
IC DRAM 2GBIT PARALLEL 96FBGA [See More]
- Memory Category: DRAM; DRAM Chip
- Access Time: 20
- Density: 2000000
from Radwell International
MEMORY MODULE, 2.5 VAC, 1 GB, 184 PIN, 5.2 WATT, DDR SDRAM MEMORY MODULE. FREE 2 YEAR RADWELL WARRANTY [See More]
- Memory Category: DRAM Chip
from Shenzhen Shengyu Electronics Technology Limited
IC DRAM 16MBIT PAR 50TSOP II [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: Surface Mount
- Density: 16000
- Cycle Time: 5.4
from Quarktwin Technology Ltd.
SDRAM - DDR3 Memory IC 2Gbit Parallel 800 MHz 20 ns 96-FBGA (9x13) [See More]
- Memory Category: DRAM; DRAM Chip
- Package Type: BGA; 96-TFBGA
- Density: 2000000
- Supply Voltage: 1.425V ~ 1.575V
from Utmel Electronic Limited
DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66, 0.400 INCH, LEAD FREE, PLASTIC, TSOP-66 [See More]
- Memory Category: DRAM Chip
from Acme Chip Technology Co., Limited
IC DRAM 4GBIT PAR 96FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: 20 ns
- Density: 4000000
- Supply Voltage: 96-TFBGA
from LCSC Electronics Technology (HK) Limited
FBGA-96 DDR SDRAM ROHS [See More]
- Memory Category: DRAM Chip
- Package Type: BGA
from Lingto Electronic Limited
IC DRAM 2GBIT 1.066GHZ 96FBGA [See More]
- Memory Category: DRAM; DRAM Chip
- Access Time: 20
- Density: 2000000
from Radwell International
SDRAM, 512M X 16BIT, -40 TO 95DEG C; DRAM MEMORY CONFIGURATION:512M X 16BIT; ACCESS TIME:625PS; PAGE SIZE:2048BYTE; NO. OF PINS:96PINS; MEMORY CASE STYLE:FBGA; OPERATING TEMPERATURE MIN:-40C; OPERATING TEMPERATURE MAX:95C; IC ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY [See More]
- Memory Category: DRAM Chip
from Shenzhen Shengyu Electronics Technology Limited
IC DRAM 4GBIT PARALLEL 96FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: Surface Mount
- Density: 4000000
- Data Rate: 1200
from Quarktwin Technology Ltd.
SDRAM - DDR3 Memory IC 2Gbit 1.066 GHz 20 ns 96-FBGA (7.5x13) [See More]
- Memory Category: DRAM; DRAM Chip
- Package Type: BGA; 96-VFBGA
- Density: 2000000
- Supply Voltage: 1.425V ~ 1.575V
from Utmel Electronic Limited
DRAM Chip DDR SDRAM 1G-Bit 128Mx8 2.5V 66-Pin TSOP Tray [See More]
- Memory Category: Volatile; DRAM Chip
- Address Bus Width: 16
- Density: 8000000
- Package Type: SSOP; 66-TSSOP (0.400, 10.16mm Width)
from Acme Chip Technology Co., Limited
IC DRAM 4GBIT PARALLEL 96FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: 20 ns
- Density: 4000000
- Supply Voltage: Surface Mount
from LCSC Electronics Technology (HK) Limited
FBGA-96 DDR SDRAM ROHS [See More]
- Memory Category: DRAM Chip
- Package Type: BGA
from Lingto Electronic Limited
IC DRAM 2GBIT PARALLEL 134FBGA [See More]
- Memory Category: DRAM; DRAM Chip
- Density: 2000000
from Radwell International
SDRAM, 256M X 16BIT, 0 TO 95DEG C; DRAM MEMORY CONFIGURATION:256M X 16BIT; ACCESS TIME:1.07NS; PAGE SIZE:2048BYTE; NO. OF PINS:96PINS; MEMORY CASE STYLE:FBGA; OPERATING TEMPERATURE MIN:0 ¦C; OPERATING TEMPERATURE MAX:95 ¦C; IC ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY [See More]
- Memory Category: DRAM Chip
from Shenzhen Shengyu Electronics Technology Limited
IC DRAM 8GBIT PARALLEL 96FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: BGA
- Density: 8000000
- Supply Voltage: -40degC ~ 95degC (TC)
from Quarktwin Technology Ltd.
SDRAM - Mobile LPDDR2 Memory IC 2Gbit Parallel 400 MHz 134-FBGA (10x11.5) [See More]
- Memory Category: DRAM; DRAM Chip
- Package Type: BGA; 134-VFBGA
- Density: 2000000
- Supply Voltage: 1.14V ~ 1.95V
from Utmel Electronic Limited
DRAM Chip DDR SDRAM 64Mbit 8Mx8 3V/3.3V 24-Pin Fortified BGA Tray [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: 24-VBGA
- Density: 67109
- Supply Voltage: 3V
from Acme Chip Technology Co., Limited
IC DRAM 2GBIT PARALLEL 78FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: 800 MHz
- Density: 2000000
- Supply Voltage: Surface Mount
from LCSC Electronics Technology (HK) Limited
FBGA-96 DDR SDRAM ROHS [See More]
- Memory Category: DRAM Chip
- Package Type: BGA
from Lingto Electronic Limited
IC DRAM 2GBIT LVSTL 200FBGA [See More]
- Memory Category: DRAM; DRAM Chip
- Access Time: 3.5
- Density: 2000000
from Radwell International
DISCONTINUED BY MANUFACTURER, MEMORY BOARD, 4 MB, DRAM W / PARITY, 72 PIN, SIMM MEMORY TYPE, 5 VOLT POWER SUPPLY, FAST PAGE MODE OPERATION, LOW POWER DISSIPATION. FREE 2 YEAR RADWELL WARRANTY [See More]
- Memory Category: DRAM Chip
from Shenzhen Shengyu Electronics Technology Limited
IC DRAM 4GBIT PAR 96FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: Surface Mount
- Density: 4000000
- Cycle Time: 20
from Quarktwin Technology Ltd.
SDRAM - Mobile LPDDR4 Memory IC 2Gbit LVSTL 1.6 GHz 3.5 ns 200-FBGA (10x14.5) [See More]
- Memory Category: DRAM; DRAM Chip
- Package Type: BGA; 200-WFBGA
- Density: 2000000
- Supply Voltage: 1.06V ~ 1.17V, 1.7V ~ 1.95V
from Utmel Electronic Limited
DRAM Chip DDR2 SDRAM 2G-Bit 128M x 16 1.8V 84-Pin TWBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Address Bus Width: 14
- Density: 16000000
- Package Type: 84-TFBGA
from Acme Chip Technology Co., Limited
IC DRAM 64MBIT LVTTL 90TFBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: 5.5 ns
- Density: 64000
- Supply Voltage: Surface Mount
from LCSC Electronics Technology (HK) Limited
FBGA-200 DDR SDRAM ROHS [See More]
- Memory Category: DRAM Chip
- Package Type: BGA
from Lingto Electronic Limited
IC DRAM 1GBIT PARALLEL 66TSOP II [See More]
- Memory Category: DRAM; DRAM Chip
- Access Time: 0.7000
- Density: 1000000
from Radwell International
DISCONTINUED BY MANUFACTURER, MEMORY MODULE, 256MB, 3.3V, 168PIN, PC133 SPEED RATING, CL3 CAS LATENCY, 8C, 32X8 DENSITY, SDRAM, DIMM, T018-RFB, PCB SLOT MOUNTED. FREE 2 YEAR RADWELL WARRANTY [See More]
- Memory Category: DRAM Chip
from Shenzhen Shengyu Electronics Technology Limited
IC DRAM 4GBIT PAR 96FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: Surface Mount
- Density: 4000000
- Cycle Time: 20
from Quarktwin Technology Ltd.
SDRAM - DDR Memory IC 1Gbit Parallel 166 MHz 700 ps 66-TSOP II [See More]
- Memory Category: DRAM; DRAM Chip
- Package Type: SSOP; TSSOP; 66-TSSOP (0.400\", 10.16mm Width)
- Density: 1000000
- Supply Voltage: 2.3V ~ 2.7V
from Utmel Electronic Limited
DRAM Chip DDR2 SDRAM 512M-Bit 32Mx16 1.8V 84-Pin WBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Address Bus Width: 15
- Density: 4096000
- Package Type: 84-TFBGA
from Acme Chip Technology Co., Limited
IC DRAM 512MBIT PAR 54FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: 6 ns
- Density: 512000
- Supply Voltage: Surface Mount
from LCSC Electronics Technology (HK) Limited
FBGA-180 DDR SDRAM ROHS [See More]
- Memory Category: DRAM Chip
- Package Type: BGA
from Lingto Electronic Limited
IC DRAM 1GBIT PARALLEL 60FBGA [See More]
- Memory Category: DRAM; DRAM Chip
- Access Time: 0.4000
- Density: 1000000
from Radwell International
MEMORY BOARD, 256MB, PC133, 133MHZ, SDRAM, 168PIN, NON ECC. FREE 2 YEAR RADWELL WARRANTY [See More]
- Memory Category: DRAM Chip
from Shenzhen Shengyu Electronics Technology Limited
IC DRAM 8GBIT 96FBGA [See More]
- Memory Category: DRAM; DRAM Chip
- Package Type: BGA
- Density: 8000000
- Supply Voltage: 0degC ~ 95degC
from Quarktwin Technology Ltd.
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 60-FBGA (8x10) [See More]
- Memory Category: DRAM; DRAM Chip
- Package Type: BGA; 60-TFBGA
- Density: 1000000
- Supply Voltage: 1.7V ~ 1.9V
from Utmel Electronic Limited
DRAM Chip DDR3 SDRAM 8G-Bit 512Mx16 1.5V 96-Pin LFBGA T/R [See More]
- Memory Category: Volatile; DRAM Chip
- Address Bus Width: 15
- Density: 64000000
- Package Type: 96-LFBGA
from Acme Chip Technology Co., Limited
IC DRAM 4GBIT PARALLEL 78FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: BGA; 78-FBGA (7.5x10.6)
- Density: 4000000
- Supply Voltage: -40degC ~ 105degC (TC)
from LCSC Electronics Technology (HK) Limited
TFBGA-96 DDR SDRAM ROHS [See More]
- Memory Category: DRAM Chip
- Package Type: BGA
from Lingto Electronic Limited
IC DRAM 1GBIT PARALLEL 78FBGA [See More]
- Memory Category: DRAM; DRAM Chip
- Access Time: 20
- Density: 1000000
from Radwell International
OBSOLETE, MEMORY MODULES, DDR2 SDRAM, 512MB, 533MT/S. FREE 2 YEAR RADWELL WARRANTY [See More]
- Memory Category: DRAM Chip
from Shenzhen Shengyu Electronics Technology Limited
IC DRAM 1GBIT PAR 134VFBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: Surface Mount
- Density: 1000000
- Data Rate: 533
from Quarktwin Technology Ltd.
SDRAM - DDR3 Memory IC 1Gbit Parallel 800 MHz 20 ns 78-FBGA (8x10.5) [See More]
- Memory Category: DRAM; DRAM Chip
- Package Type: BGA; 78-TFBGA
- Density: 1000000
- Supply Voltage: 1.425V ~ 1.575V
from Utmel Electronic Limited
DRAM Chip Mobile LPDDR SDRAM 128M-Bit 8Mx16 1.8V 60-Pin VFBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Address Bus Width: 14
- Density: 1024000
- Package Type: 60-TFBGA
from Acme Chip Technology Co., Limited
IC DRAM 1GBIT PARALLEL 134FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: BGA; 134-FBGA (10x11.5)
- Density: 1000000
- Supply Voltage: -30degC ~ 85degC (TC)
from LCSC Electronics Technology (HK) Limited
FBGA-96(8x14) DDR SDRAM ROHS [See More]
- Memory Category: DRAM Chip
- Package Type: BGA
from Lingto Electronic Limited
IC DRAM 256MBIT PARALLEL 60TFBGA [See More]
- Memory Category: DRAM; DRAM Chip
- Access Time: 0.7000
- Density: 256000
from Radwell International
DISCONTINUED BY MANUFACTURER, MEMORY BOARD, VALUERAM, DIMM, SDRAM, 256MB, 168PIN, 133MHZ, NON-ECC CL3. FREE 2 YEAR RADWELL WARRANTY [See More]
- Memory Category: DRAM Chip
from Shenzhen Shengyu Electronics Technology Limited
IC DRAM 2GBIT PARALLEL 168WFBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: Surface Mount
- Density: 2000000
- Data Rate: 400
from Quarktwin Technology Ltd.
SDRAM - DDR Memory IC 256Mbit Parallel 200 MHz 700 ps 60-TFBGA (8x13) [See More]
- Memory Category: DRAM; DRAM Chip
- Package Type: BGA; 60-TFBGA
- Density: 256000
- Supply Voltage: 2.3V ~ 2.7V
from Utmel Electronic Limited
DRAM Chip Mobile LPSDR SDRAM 256M-Bit 16Mx16 1.8V [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: 54-TFBGA
- Density: 268435
- Supply Voltage: 1.8V
from Acme Chip Technology Co., Limited
IC DRAM 256MBIT PAR 168FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: -25degC ~ 85degC (TC)
- Density: 256000
- Supply Voltage: 400 MHz
from LCSC Electronics Technology (HK) Limited
FBGA-96(8x14) DDR SDRAM ROHS [See More]
- Memory Category: DRAM Chip
- Package Type: BGA
from Lingto Electronic Limited
IC DRAM 256MBIT PARALLEL 84TFBGA [See More]
- Memory Category: DRAM; DRAM Chip
- Access Time: 0.4000
- Density: 256000
from Radwell International
DRAM, 64M X 8BIT, 0 TO 70DEG C; DRAM TYPE:DDR; DRAM DENSITY:512MBIT; DRAM MEMORY CONFIGURATION:64M X 8BIT; CLOCK FREQUENCY:200MHZ; MEMORY CASE STYLE:TSOP; NO. OF PINS:66PINS; SUPPLY VOLTAGE NOM:2.5V; ACCESS TIME:5NS; PRODUCT RANGE:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY [See More]
- Memory Category: DRAM Chip
from Shenzhen Shengyu Electronics Technology Limited
IC DRAM 4GBIT PARALLEL 216WFBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: Surface Mount
- Density: 4000000
- Data Rate: 400
from Quarktwin Technology Ltd.
SDRAM - DDR2 Memory IC 256Mbit Parallel 400 MHz 400 ps 84-TFBGA (8x12.5) [See More]
- Memory Category: DRAM; DRAM Chip
- Package Type: BGA; 84-TFBGA
- Density: 256000
- Supply Voltage: 1.7V ~ 1.9V
from Utmel Electronic Limited
DRAM Chip SDRAM 128M-Bit 4Mx32 3.3V 86-Pin TSOP-II [See More]
- Memory Category: Volatile; DRAM Chip
- Address Bus Width: 14
- Density: 1024000
- Package Type: 86-TFSOP (0.400, 10.16mm Width)
from Acme Chip Technology Co., Limited
IC DRAM 2GBIT PAR 96FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: 933 MHz
- Density: 2000000
- Supply Voltage: Surface Mount
from LCSC Electronics Technology (HK) Limited
FBGA-96 DDR SDRAM ROHS [See More]
- Memory Category: DRAM Chip
- Package Type: BGA
from Lingto Electronic Limited
IC DRAM 256MBIT PARALLEL 60FPBGA [See More]
- Memory Category: DRAM; DRAM Chip
- Density: 256000
from Radwell International
DRAM, 4M X 16BIT, -40 TO 85DEG C; DRAM TYPE:SDR; DRAM DENSITY:64MBIT; DRAM MEMORY CONFIGURATION:4M X 16BIT; CLOCK FREQUENCY:166MHZ; MEMORY CASE STYLE:TSOP; NO. OF PINS:54PINS; SUPPLY VOLTAGE NOM:3.3V; ACCESS TIME:6NS; PRODUCT RANGE:-ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY [See More]
- Memory Category: DRAM Chip
from Shenzhen Shengyu Electronics Technology Limited
IC DRAM 4GBIT PAR 168FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: 168-WFBGA
- Density: 4000000
from Quarktwin Technology Ltd.
SDRAM - Mobile LPDDR Memory IC 256Mbit Parallel 166 MHz 60-FBGA (8x9) [See More]
- Memory Category: DRAM; DRAM Chip
- Package Type: BGA; 60-TFBGA
- Density: 256000
- Supply Voltage: 1.7V ~ 1.95V
from Utmel Electronic Limited
DRAM Chip SDRAM 512M-Bit 16Mx32 1.8V 90-Pin WBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Address Bus Width: 15
- Density: 4096000
- Package Type: 90-TFBGA
from Acme Chip Technology Co., Limited
IC DRAM 2GBIT PAR 96FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: 933 MHz
- Density: 2000000
- Supply Voltage: Surface Mount
from LCSC Electronics Technology (HK) Limited
TFBGA-96 DDR SDRAM ROHS [See More]
- Memory Category: DRAM Chip
- Package Type: BGA
from Lingto Electronic Limited
IC DRAM 256MBIT PARALLEL 54FBGA [See More]
- Memory Category: DRAM; DRAM Chip
- Access Time: 5.5
- Density: 256000
from Radwell International
MEMORY MODULE, DDR3L, DRAM, 512MX64, CMOS, SODIMM-204. FREE 2 YEAR RADWELL WARRANTY [See More]
- Memory Category: DRAM Chip
from Shenzhen Shengyu Electronics Technology Limited
IC DRAM 4GBIT PAR 1.2GHZ 96FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: Surface Mount
- Density: 4000000
- Data Rate: 1200
from Quarktwin Technology Ltd.
SDRAM - Mobile SDRAM Memory IC 256Mbit Parallel 166 MHz 5.5 ns 54-FBGA (8x8) [See More]
- Memory Category: DRAM; DRAM Chip
- Package Type: BGA; 54-VFBGA
- Density: 256000
- Supply Voltage: 1.7V ~ 1.95V
from Utmel Electronic Limited
DRAM Module DDR3 SDRAM 8Gbyte 204SODIMM [See More]
- Memory Category: DRAM Chip
from Acme Chip Technology Co., Limited
78 ball FBGA DDR3L 1866 [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: BGA; 78-FBGA (7.5x10.6)
- Density: 4000000
- Supply Voltage: 0degC ~ 95degC (TC)
from LCSC Electronics Technology (HK) Limited
FBGA-78 DDR SDRAM ROHS [See More]
- Memory Category: DRAM Chip
- Package Type: BGA
from Lingto Electronic Limited
IC DRAM 256MBIT PARALLEL 54TFBGA [See More]
- Memory Category: DRAM; DRAM Chip
- Access Time: 5.4
- Density: 256000
from Radwell International
DRAM, 4M X 16BIT, 0 TO 70DEG C; DRAM TYPE:SDR; DRAM DENSITY:64MBIT; DRAM MEMORY CONFIGURATION:4M X 16BIT; CLOCK FREQUENCY:166MHZ; MEMORY CASE STYLE:TSOP; NO. OF PINS:54PINS; SUPPLY VOLTAGE NOM:3.3V; ACCESS TIME:6NS; PRODUCT RANGE:- ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY [See More]
- Memory Category: DRAM Chip
from Shenzhen Shengyu Electronics Technology Limited
IC DRAM 128MBIT PARALLEL 54FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: Surface Mount
- Density: 128000
- Data Rate: 200
from Quarktwin Technology Ltd.
SDRAM Memory IC 256Mbit Parallel 166 MHz 5.4 ns 54-TFBGA (8x8) [See More]
- Memory Category: DRAM; DRAM Chip
- Package Type: BGA; 54-TFBGA
- Density: 256000
- Supply Voltage: 3.6V; 3V ~ 3.6V
from Utmel Electronic Limited
DRAM Module DDR3 SDRAM 8Gbyte 240DIMM [See More]
- Memory Category: DRAM Chip
from Acme Chip Technology Co., Limited
IC DRAM 512MBIT PAR 168WFBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: Surface Mount
- Density: 512000
- Data Rate: 533
from LCSC Electronics Technology (HK) Limited
VFBGA-60(8x9) DDR SDRAM ROHS [See More]
- Memory Category: DRAM Chip
- Package Type: BGA
from Lingto Electronic Limited
IC DRAM 256MBIT PAR 54TSOP II [See More]
- Memory Category: DRAM; DRAM Chip
- Access Time: 5.4
- Density: 256000
from Radwell International
MEMORY MODULE, MEMORY TYPE: DDR3 SDRAM, CAPACITY: 1GB, DATA TRANSFER RATE 1333MHZ, 240 PIN, BUS TYPE: PC-10600, ERROR CORRECTION: ECC, CYCLE TIME: 1.5NS, 1.5V. FREE 2 YEAR RADWELL WARRANTY [See More]
- Memory Category: DRAM Chip
from Shenzhen Shengyu Electronics Technology Limited
IC DRAM 256MBIT PARALLEL 84FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: Surface Mount
- Density: 256000
- Data Rate: 400
from Quarktwin Technology Ltd.
SDRAM Memory IC 256Mbit Parallel 166 MHz 5.4 ns 54-TSOP II [See More]
- Memory Category: DRAM; DRAM Chip
- Package Type: 54-TSOP (0.400\", 10.16mm Width)
- Density: 256000
- Supply Voltage: 3.6V; 3V ~ 3.6V
from Utmel Electronic Limited
IC CTRLR DDR DRAM, SDRAM 28QSOP [See More]
- Memory Category: DRAM Chip
- Pins: 28
- Package Type: QSOP
- Supply Voltage: 5V; 5V
from Acme Chip Technology Co., Limited
IC DRAM 128MBIT PARALLEL 54FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: BGA; 54-FBGA (8x8)
- Density: 128000
- Supply Voltage: -40degC ~ 85degC (TA)
from LCSC Electronics Technology (HK) Limited
TSOP-66-10.2mm DDR SDRAM ROHS [See More]
- Memory Category: DRAM Chip
- Package Type: TSOP
from Lingto Electronic Limited
IC DRAM 512MBIT PARALLEL 90FBGA [See More]
- Memory Category: DRAM; DRAM Chip
- Access Time: 5
- Density: 512000
from Radwell International
DISCONTINUED BY MANUFACTURER, RAM CHIP, 32 MB, 100-PIN, DRAM-EDO, 60 NS, 3.3 VDC. FREE 2 YEAR RADWELL WARRANTY [See More]
- Memory Category: DRAM Chip
from Shenzhen Shengyu Electronics Technology Limited
IC DRAM 1GBIT PAR 78FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: Surface Mount
- Density: 1000000
- Cycle Time: 20
from Quarktwin Technology Ltd.
SDRAM - Mobile LPDDR Memory IC 512Mbit Parallel 200 MHz 5 ns 90-FBGA (8x13) [See More]
- Memory Category: DRAM; DRAM Chip
- Package Type: BGA; 90-VFBGA
- Density: 512000
- Supply Voltage: 1.7V ~ 1.95V
from Utmel Electronic Limited
IC CTRLR DDR DRAM, SDRAM 28QSOP [See More]
- Memory Category: DRAM Chip
- Supply Voltage: 5V; 5V
- Package Type: SSOP; SSOP
- Operating Temperature: 0 to 70
from Acme Chip Technology Co., Limited
IC DRAM 256MBIT PAR 50WLCSP [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: 50-WLCSP (1.96x4.63)
- Density: 256000
- Supply Voltage: 0degC ~ 85degC (TC)
from LCSC Electronics Technology (HK) Limited
FBGA-84(9x12.5) DDR SDRAM ROHS [See More]
- Memory Category: DRAM Chip
- Package Type: BGA
from Lingto Electronic Limited
IC DRAM 512MBIT PAR 86TSOP II [See More]
- Memory Category: DRAM; DRAM Chip
- Access Time: 17
- Density: 512000
from Radwell International
DISCONTINUED BY MANUFACTURER, MEMORY CARD, 1GB, 184 PIN, DDR, SDRAM. FREE 2 YEAR RADWELL WARRANTY [See More]
- Memory Category: DRAM Chip
from Shenzhen Shengyu Electronics Technology Limited
IC DRAM 4GBIT PAR 96FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: Surface Mount
- Density: 4000000
- Cycle Time: 20
from Quarktwin Technology Ltd.
SDRAM Memory IC 512Mbit Parallel 133 MHz 17 ns 86-TSOP II [See More]
- Memory Category: DRAM; DRAM Chip
- Package Type: 86-TFSOP (0.400\", 10.16mm Width)
- Density: 512000
- Supply Voltage: 3.6V; 3V ~ 3.6V
from Utmel Electronic Limited
IC DRAM 16M PARALLEL 50TSOP II [See More]
- Memory Category: Volatile; DRAM Chip
- Pins: 50
- Package Type: 50-TSOP (0.400, 10.16mm Width)
- Supply Voltage: 3V~3.6V
from Acme Chip Technology Co., Limited
IC DRAM 1GBIT PAR 96FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: BGA; 96-FBGA (8x13)
- Density: 1000000
- Supply Voltage: -40degC ~ 95degC (TC)
from LCSC Electronics Technology (HK) Limited
FBGA-60 DDR SDRAM ROHS [See More]
- Memory Category: DRAM Chip
- Package Type: BGA
from Lingto Electronic Limited
IC DRAM 8GBIT PARALLEL 78FBGA [See More]
- Memory Category: DRAM; DRAM Chip
- Access Time: 20
- Density: 8000000
from Radwell International
MEMORY MODULE, ECC, DDR2 SDRAM, 1 GB, 800 MHZ, 240 PIN, PC-600, 5 NS CYCLE TIME, CL6, 1.8 V. FREE 2 YEAR RADWELL WARRANTY [See More]
- Memory Category: DRAM Chip
from Shenzhen Shengyu Electronics Technology Limited
IC DRAM 2GBIT PAR 96FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: BGA
- Density: 2000000
- Supply Voltage: -40degC ~ 95degC (TC)
from Quarktwin Technology Ltd.
SDRAM - DDR3L Memory IC 8Gbit Parallel 933 MHz 20 ns 78-FBGA (9x10.5) [See More]
- Memory Category: DRAM; DRAM Chip
- Package Type: BGA; 78-TFBGA
- Density: 8000000
- Supply Voltage: 1.283V ~ 1.45V
from Utmel Electronic Limited
IC DRAM 1G PARALLEL 60FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: 1.7V~1.9V
- Package Type: 60-TFBGA
- Access Time: 0.4500
from Acme Chip Technology Co., Limited
IC DRAM 2GBIT PARALLEL 78FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: BGA; 78-FBGA (7.5x10.5)
- Density: 2000000
- Supply Voltage: 0degC ~ 95degC (TC)
from LCSC Electronics Technology (HK) Limited
FBGA-84 DDR SDRAM ROHS [See More]
- Memory Category: DRAM Chip
- Package Type: BGA
from Lingto Electronic Limited
DDR3, 8G (1GX8), 1.35V, BGA 78 [See More]
- Memory Category: DRAM; DRAM Chip
- Access Time: 20
- Density: 8000000
from Radwell International
DISCONTINUED BY MANUFACTURER, MEMORY SDRAM MODULE, 64MB, 133MHZ, 4K REFRESH COUNT, 144-SODIMM. FREE 2 YEAR RADWELL WARRANTY [See More]
- Memory Category: DRAM Chip
from Shenzhen Shengyu Electronics Technology Limited
IC DRAM 4GBIT PARALLEL 78FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: Surface Mount
- Density: 4000000
- Cycle Time: 20
from Quarktwin Technology Ltd.
SDRAM - DDR3L Memory IC 8Gbit Parallel 800 MHz 13.75 ns 78-FBGA (9x13.2) [See More]
- Memory Category: DRAM; DRAM Chip
- Package Type: BGA; 78-TFBGA
- Density: 8000000
- Supply Voltage: 1.283V ~ 1.45V
from Utmel Electronic Limited
IC DRAM 1G PARALLEL 60FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: 60-TFBGA
- Density: 1073742
- Supply Voltage: 1.8V
from Acme Chip Technology Co., Limited
IC DRAM 2GBIT PAR 78FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: BGA; 78-FBGA (8x10.5)
- Density: 2000000
- Supply Voltage: 0degC ~ 95degC (TC)
from LCSC Electronics Technology (HK) Limited
FBGA-84(8x12.5) DDR SDRAM ROHS [See More]
- Memory Category: DRAM Chip
- Package Type: BGA
from Lingto Electronic Limited
IC DRAM 8GBIT PARALLEL 78FBGA [See More]
- Memory Category: DRAM; DRAM Chip
- Access Time: 13.75
- Density: 8000000
from Radwell International
MEMORY MODULE SDRAM 128MB 133MHZ 144-SODIMM. FREE 2 YEAR RADWELL WARRANTY [See More]
- Memory Category: DRAM Chip
from Shenzhen Shengyu Electronics Technology Limited
IC DRAM 4GBIT PAR 78FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: BGA
- Density: 4000000
- Supply Voltage: -40degC ~ 95degC (TC)
from Quarktwin Technology Ltd.
SDRAM Memory IC 16Mbit Parallel 166 MHz 5.4 ns 50-TSOP II [See More]
- Memory Category: DRAM; DRAM Chip
- Package Type: 50-TSOP (0.400\", 10.16mm Width)
- Density: 16000
- Supply Voltage: 3.6V; 3V ~ 3.6V
from Utmel Electronic Limited
IC DRAM 1G PARALLEL 84TWBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Address Bus Width: 13
- Density: 8000000
- Package Type: 84-TFBGA
from Acme Chip Technology Co., Limited
IC DRAM 4GBIT PARALLEL 78FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: 933 MHz
- Density: 4000000
- Supply Voltage: Surface Mount
from LCSC Electronics Technology (HK) Limited
FBGA-178 DDR SDRAM ROHS [See More]
- Memory Category: DRAM Chip
- Package Type: BGA
from Lingto Electronic Limited
IC DRAM 16MBIT PAR 50TSOP II [See More]
- Memory Category: DRAM; DRAM Chip
- Access Time: 5.4
- Density: 16000
from Radwell International
MEMORY BOARD, 2GB,1066MHZ - PC3-8500S, DDR3 SDRAM, 200 PIN, 1.5V. FREE 2 YEAR RADWELL WARRANTY [See More]
- Memory Category: DRAM Chip
from Shenzhen Shengyu Electronics Technology Limited
IC DRAM 4GBIT PARALLEL 96FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: Surface Mount
- Density: 4000000
- Cycle Time: 20
from Quarktwin Technology Ltd.
SDRAM - DDR3 Memory IC 4Gbit Parallel 933 MHz 20 ns 96-FBGA (7.5x13.5) [See More]
- Memory Category: DRAM; DRAM Chip
- Package Type: BGA; 96-TFBGA
- Density: 4000000
- Supply Voltage: 1.425V ~ 1.575V
from Utmel Electronic Limited
IC DRAM 1G PARALLEL 90VFBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: 1.7V~1.95V
- Package Type: 90-VFBGA
- Access Time: 5
from Acme Chip Technology Co., Limited
IC DRAM 4GBIT PAR 96FBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Package Type: 933 MHz
- Density: 4000000
- Supply Voltage: Surface Mount
from LCSC Electronics Technology (HK) Limited
TFBGA-96 DDR SDRAM ROHS [See More]
- Memory Category: DRAM Chip
- Package Type: BGA
from Lingto Electronic Limited
IC DRAM 4GBIT PARALLEL 96FBGA [See More]
- Memory Category: DRAM; DRAM Chip
- Access Time: 20
- Density: 4000000
from Radwell International
DISCONTINUED BY MANUFACTURER, SINGLE-RANK MEMORY MODULE, DDR3 SDRAM MEMORY TYPE, 8GB DATA CAPACITY, 1600MHZ TRANSFER RATE, PC-12800 BUS TYPE, 1.25NS CYCLE TIME, 200MHZ MEMORY CLOCK, 1.5V RATING. FREE 2 YEAR RADWELL WARRANTY [See More]
- Memory Category: DRAM Chip
from Shenzhen Shengyu Electronics Technology Limited
IC DRAM 288MBIT PARALLEL 144UBGA [See More]
- Memory Category: Volatile; DRAM Chip
- Supply Voltage: Surface Mount
- Density: 288000
- Data Rate: 533