3.3 V Memory Chips
from Micross Components, Inc.
Memory Products Offered: MRAM. SRAM. nvSRAM. VRAM. SDRAM. UVEPROM. DRAM. EEPROM. FRAM. Flash [See More]
- Supply Voltage: 3.3V; 3.3
- Density: 128000
- Memory Category: SDRAM; DRAM Chip
- Package Type: 54PINTSOPII
from DigiKey
FLASH - NAND (MLC) Memory IC 32Gb (4G x 8) eMMC 200MHz 100-BGA (14x18) [See More]
- Supply Voltage: 3.3V
- Package Type: 100-LBGA
- Memory Category: Flash
- Operating Temperature: -40 to 85
from Texas Instruments
32-Mbit High-Temp Flash Memory with Serial Peripheral Interface (SPI) Bus 14-CFP -55 to 210 [See More]
- Supply Voltage: 1.8V; 3.3V
- Density: 32000
- Memory Category: Flash
- Package Type: CFP,XCEPT
from DigiKey
FLASH - NAND (MLC) Memory IC 4Gb (512M x 8) eMMC 200MHz 153-FBGA (11.5x13) [See More]
- Supply Voltage: 3.3V
- Package Type: 153-VFBGA
- Memory Category: Flash
- Operating Temperature: -40 to 85
from Texas Instruments
16MB Radiation-Hardened SRAM 76-CFP -55 to 125 [See More]
- Supply Voltage: 1.8V; 3.3V
- Density: 16000
- Memory Category: SRAM Chip
- Access Time: 20
from DigiKey
FLASH - NAND Memory IC 256Gb (32G x 8) eMMC 200MHz 153-FBGA (11.5x13) [See More]
- Supply Voltage: 3.3V
- Package Type: 153-VFBGA
- Memory Category: Flash
- Operating Temperature: -40 to 85
from Datakey
The IAX10.5Kb CryptoAuthentication ™ extended length memory token utilizes Microchip ’s ATECC608A CryptoAuthentication ™ IC, enabling embedded applications, like: • Secure storage/transfer of keys, certificates, passwords. • Secure credential with unique, read-only serial... [See More]
- Supply Voltage: 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V; 2.0 to 5.5 V
- Density: 10
- Memory Category: EEPROM
- Data Retention: 10
from Shenzhen Shengyu Electronics Technology Limited
IC PSRAM 16MBIT PARALLEL 48FBGA [See More]
- Supply Voltage: 3.3V; 2.6V ~ 3.3V
- Density: 16000
- Memory Category: Volatile; SRAM Chip
- Package Type: BGA
from Microchip Technology, Inc.
Need more microcontroller pins for new features? Want to stay with a low pin-count microcontroller rather than switching to a more expensive one? Microchip ’s UNI/O ® bus serial EEPROM uses only one connection to the host microcontroller. This compares to two or three pins for I2C and... [See More]
- Supply Voltage: 1.8V; 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V
- Density: 16
- Memory Category: EEPROM
- Package Type: SOIC; DIP; ['DICE', 'WAFER', 'Wafer', 'CSP', 'MSOP', 'TDFN', 'SOIC', 'SOT-23', 'PDIP', 'TO-92']
from SK Hynix
System performance depends highly on eMMC performance, such as random read and write IOPS. SK hynix eMMC provides the best IOPs performance by using advanced FTL algorithm. Furthermore, features of eMMC5.0 allows for an even greater improvement in performance. [See More]
- Supply Voltage: 1.8V; 2.7V; 3V; 3.3V; 3.6V
- Density: 512000 to 1024000000
- Memory Category: Flash
- Operating Temperature: -45 to 85
from Integrated Device Technology
The 72V2103 256K x 9/128K x 18 SuperSync II FIFO memory has flexible x9/x18 Bus-Matching on both read and write ports. The variable clock cycle counting delay associated with the latency period found on previous SuperSync devices has been eliminated. SuperSync II FIFOs are appropriate for network,... [See More]
- Supply Voltage: 3.3V
- Density: 2048
- Memory Category: FIFO
- Number of Words: 128
from Cypress Semiconductor Corp.
Cypress is the Synchronous (Sync) SRAM market leader with more than 2.7 billion cumulative units shipped, with lead times of six weeks or less, 99% or higher on-time delivery and legacy product support for up to 20 years. Cypress is the preferred SRAM supplier to customers in several market segments... [See More]
- Supply Voltage: 2.5V; 3.3V
- Density: 4000 to 72000
- Memory Category: SRAM Chip
- Package Type: BGA; TQFP; FBGA, WAFER
from Everspin Technologies, Inc.
The MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits. The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on... [See More]
- Supply Voltage: 3.3V
- Density: 16000
- Memory Category: MRAM
- Number of Words: 2000
from Acme Chip Technology Co., Limited
EMMC 5.1 (HS400) 153B 4GB - INDU [See More]
- Supply Voltage: 3.3V; 1.8V ~ 3.3V
- Density: 32000000
- Memory Category: Flash; Non-Volatile
- Package Type: BGA; 153-BGA
from GSI Technology
GSI Technology ™s Asynchronous SRAM portfolio can handle all of your design needs. Our asynchronous SRAMs are easy to use, have fast access times, and are available in a variety of packages. Asynchronous SRAMs are appropriate as main memory for small cache-less embedded... [See More]
- Supply Voltage: 3.3V
- Density: 1000 to 8000
- Memory Category: SRAM Chip
- Package Type: BGA; TSOP; FPBGA
from TT Semiconductor, Inc.
TT Memories is a division of Twilight Technology formed to support the memory marketplace from legacy technologies to state-of-the-art technologies. TT Memories manufactures devices and modules for the Commercial, Industrial, Aerospace, and Defense marketplaces. TT Memories also designs and... [See More]
- Supply Voltage: 3.3V
- Operating Temperature: -55 to 125
- Density: 32000
from Quarktwin Technology Ltd.
FLASH - NAND, DRAM - LPDDR Memory IC 4GByte (NAND), 4Gbit (LPDDR3 DRAM) eMMC 5.1 HS400 + LPDDR3 221-VFBGA (13x11.5) [See More]
- Supply Voltage: 3.3V; 1.8V, 3.3V
- Density: 32000000
- Memory Category: Flash; FLASH, RAM
- Package Type: BGA; 221-VFBGA
from Datakey
The IAT10.5Kb CryptoAuthentication ™ memory token utilizes Microchip ’s ATECC608A CryptoAuthentication ™ IC, enabling embedded applications, like: • Secure storage/transfer of keys, certificates, passwords. • Secure credential with unique, read-only serial number. •... [See More]
- Supply Voltage: 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V; 2.0 to 5.5 V
- Density: 10
- Memory Category: EEPROM
- Data Retention: 10
from Shenzhen Shengyu Electronics Technology Limited
IC FLASH 16MBIT PARALLEL 45CBGA [See More]
- Supply Voltage: 3.3V; 2.65V ~ 3.3V
- Density: 16000
- Memory Category: Flash; Non-Volatile
- Package Type: BGA
from Microchip Technology, Inc.
Need more microcontroller pins for new features? Want to stay with a low pin-count microcontroller rather than switching to a more expensive one? Microchip ’s UNI/O ® bus serial EEPROM uses only one connection to the host microcontroller. This compares to two or three pins for I2C and... [See More]
- Supply Voltage: 1.8V; 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V
- Density: 16
- Memory Category: EEPROM
- Package Type: SOIC; DIP; ['MSOP', 'TDFN', 'SOIC', 'SOT-23', 'PDIP', 'TO-92']
from Integrated Device Technology
The 70V639 is a high-speed 128K x 18 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER / SLAVE Dual-Port RAM for 36-bit-or-more word system. Using the IDT MASTER / SLAVE Dual-Port RAM approach in 36-bit or wider memory system applications... [See More]
- Supply Voltage: 3.3V
- Density: 2304
- Memory Category: DPRAM
- Number of Words: 128
from Everspin Technologies, Inc.
The MR4A08B is a 16,777,216-bit magnetoresistive random access memory (MRAM) device organized as 2,097,152 words of 8 bits. The MR4A08B offers SRAM compatible 35ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on... [See More]
- Supply Voltage: 3.3V
- Density: 16000
- Memory Category: MRAM
- Number of Words: 2000
from GSI Technology
GSI Technology ™s No Bus Turnaround (NBT „ ¢) product portfolio is the largest in the industry with six different densities in x18, 32, 36 and 72 bit widths. Our NBT SRAMs provide the fastest clock rates and lowest power of any in the world. NBT SRAMs are synchronous, burst-capable... [See More]
- Supply Voltage: 1.8V; 2.5V; 3.3V
- Density: 4000 to 288000
- Memory Category: SRAM Chip
- Package Type: BGA; QFP; TQFP
from Quarktwin Technology Ltd.
FLASH - NAND, DRAM - LPDDR Memory IC 8GByte (NAND), 8Gbit (LPDDR3 DRAM) eMMC 5.1 HS400 + LPDDR3 221-VFBGA (13x11.5) [See More]
- Supply Voltage: 3.3V; 1.8V, 3.3V
- Density: 64000000
- Memory Category: Flash; FLASH, RAM
- Package Type: BGA; 221-VFBGA
from Datakey
For additional security, Datakey offers the Secure Memory line of tokens, featuring the Unique ID series and the CryptoMemory ® series. Secure Memory tokens are available with I2C interfaces and capacities from 1 Kb to 256 Kb. The tokens feature: Ultra-rugged Construction – SlimLine... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V; 5V; 2.7 to 5.5V
- Density: 1 to 256
- Memory Category: EEPROM
- Operating Temperature: -40 to 85
from Shenzhen Shengyu Electronics Technology Limited
IC FLASH 16MBIT PARALLEL 48TSOP [See More]
- Supply Voltage: 3.3V; 2.65V ~ 3.3V
- Density: 16000
- Memory Category: Flash; Non-Volatile
- Access Time: 70
from Microchip Technology, Inc.
Need more microcontroller pins for new features? Want to stay with a low pin-count microcontroller rather than switching to a more expensive one? Microchip ’s UNI/O ® bus serial EEPROM uses only one connection to the host microcontroller. This compares to two or three pins for I2C and... [See More]
- Supply Voltage: 1.8V; 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V
- Density: 1
- Memory Category: EEPROM
- Package Type: SOIC; DIP; ['DICE', 'WAFER', 'Wafer', 'MSOP', 'TDFN', 'SOIC', 'SOT-23', 'PDIP', 'TO-92']
from Integrated Device Technology
The 72V295 is an 128K x 18 SuperSync FIFO memory with clocked read and write controls. The Frequency Select pin ( FS ) has been removed, thus it is no longer necessary to select which of the two clock inputs, RCLK or WCLK , is running at the higher frequency. SuperSync FIFOs are particularly... [See More]
- Supply Voltage: 3.3V
- Density: 2048
- Memory Category: FIFO
- Number of Words: 128
from Everspin Technologies, Inc.
The MR0A08B is a 1,048,576-bit magnetoresistive random access memory (MRAM) device organized as 131,072 words of 8 bits. The MR0A08B offers SRAM compatible 35 ns read/write timing with unlimited endurance. Data is always non-volatile for greater than 20-years. Data is automatically protected on... [See More]
- Supply Voltage: 3.3V
- Density: 1000
- Memory Category: MRAM
- Number of Words: 128
from GSI Technology
GSI offers the broadest portfolio of Synchronous Burst (SyncBurst „ ¢) SRAMs in the industry. Our SyncBurst SRAMs provide the fastest clock rates and lowest power of any in the world. SyncBurst SRAMs provide a œburst of (typically) 2 to 4 words in response to a single clock... [See More]
- Supply Voltage: 1.8V; 2.5V; 3.3V
- Density: 4000 to 288000
- Memory Category: SRAM Chip
- Package Type: BGA; QFP; TQFP
from Quarktwin Technology Ltd.
FLASH - NAND, DRAM - LPDDR Memory IC 8GByte (NAND), 8Gbit (LPDDR3 DRAM) eMMC 5.1 HS400 + LPDDR3 136-FBGA (10x10) [See More]
- Supply Voltage: 3.3V; 1.8V, 3.3V
- Density: 64000000
- Memory Category: Flash; FLASH, RAM
- Package Type: BGA; 136-FBGA
from Datakey
For additional security, Datakey offers the Secure Memory line of tokens, featuring the Unique ID series and the CryptoMemory ® series. Secure Memory tokens are available with I2C interfaces and capacities from 1 Kb to 256 Kb. The tokens feature: Ultra-rugged Construction – SlimLine... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V; 5V; 2.7 to 5.5V
- Density: 1 to 256
- Memory Category: EEPROM
- Operating Temperature: -40 to 85
from Shenzhen Shengyu Electronics Technology Limited
IC FLASH 32MBIT PARALLEL 46UBGA [See More]
- Supply Voltage: 3.3V; 2.65V ~ 3.3V
- Density: 32000
- Memory Category: Flash; Non-Volatile
- Package Type: BGA
from Microchip Technology, Inc.
Need more microcontroller pins for new features? Want to stay with a low pin-count microcontroller rather than switching to a more expensive one? Microchip ’s UNI/O ® bus serial EEPROM uses only one connection to the host microcontroller. This compares to two or three pins for I2C and... [See More]
- Supply Voltage: 1.8V; 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V
- Density: 2
- Memory Category: EEPROM
- Package Type: SOIC; DIP; ['DICE', 'WAFER', 'CSP', 'MSOP', 'TDFN', 'SOIC', 'SOT-23', 'PDIP', 'TO-92']
from Integrated Device Technology
The 70V3399 is a high-speed 128K x 18 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1 , permits the on-chip circuitry of each port to enter a very low standby... [See More]
- Supply Voltage: 3.3V
- Density: 2304
- Memory Category: DPRAM
- Number of Words: 128
from Quarktwin Technology Ltd.
FLASH - NAND, DRAM - LPDDR Memory IC 16GByte (NAND), 16Gbit (LPDDR4 DRAM) eMMC 5.1 HS400 + LPDDR4X 254-FBGA (11.5x13x1.0) [See More]
- Supply Voltage: 3.3V; 1.8V, 3.3V
- Density: 128000000
- Memory Category: Flash; FLASH, RAM
- Package Type: BGA; 254-FBGA
from Datakey
For additional security, Datakey offers the Secure Memory line of keys, featuring the Unique ID series and the CryptoMemory ® series. Secure Memory keys are available with I2C interfaces and capacities from 1 Kb to 256 Kb. The keys feature: Ultra-rugged Construction – Serial Memory keys... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V; 5V; 2.7 to 5.5V
- Density: 1 to 256
- Memory Category: EEPROM
- Operating Temperature: -40 to 85
from Shenzhen Shengyu Electronics Technology Limited
IC SRAM 2MBIT PARALLEL 48VFBGA [See More]
- Supply Voltage: 3.3V; 2.7V ~ 3.3V
- Density: 2000
- Memory Category: Volatile; SRAM Chip
- Package Type: BGA
from Microchip Technology, Inc.
Need more microcontroller pins for new features? Want to stay with a low pin-count microcontroller rather than switching to a more expensive one? Microchip ’s UNI/O ® bus serial EEPROM uses only one connection to the host microcontroller. This compares to two or three pins for I2C and... [See More]
- Supply Voltage: 1.8V; 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V
- Density: 4
- Memory Category: EEPROM
- Package Type: SOIC; DIP; ['DICE', 'WAFER', 'MSOP', 'TDFN', 'SOIC', 'SOT-23', 'PDIP']
from Integrated Device Technology
The 70V659 is a high-speed 128K x 36 Asynchronous Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER / SLAVE Dual-Port RAM for 72-bit-or-more word system. Using the IDT MASTER / SLAVE Dual-Port RAM approach in 72-bit or wider memory system applications... [See More]
- Supply Voltage: 3.3V
- Density: 4608
- Memory Category: DPRAM
- Number of Words: 128
from Quarktwin Technology Ltd.
FLASH - NAND, DRAM - LPDDR Memory IC 32GByte (NAND), 16Gbit (LPDDR4 DRAM) eMMC 5.1 HS400 + LPDDR4X 254-FBGA (11.5x13x1.0) [See More]
- Supply Voltage: 3.3V; 1.8V, 3.3V
- Density: 256000000
- Memory Category: Flash; FLASH, RAM
- Package Type: BGA; 254-FBGA
from Datakey
Leveraging industry-standard serial EEPROM memory, Datakey offers Bar tokens with SPI, I2C or Microwire interfaces and capacities from 1 Kb to 256 Kb. The tokens feature: Ultra-rugged Construction – Bar memory tokens are solid over-molded using a durable composite, making them impervious to... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V; 5V; 2.7 to 5.5V
- Density: 1 to 256
- Memory Category: EEPROM
- Operating Temperature: -40 to 85
from Shenzhen Shengyu Electronics Technology Limited
IC SRAM 256KBIT PAR 100VFBGA [See More]
- Supply Voltage: 3.3V; 1.7V ~ 1.9V, 2.4V ~ 2.6V, 2.7V ~ 3.3V
- Density: 256
- Memory Category: Volatile; SRAM Chip
- Package Type: BGA
from Microchip Technology, Inc.
Need more microcontroller pins for new features? Want to stay with a low pin-count microcontroller rather than switching to a more expensive one? Microchip ’s UNI/O ® bus serial EEPROM uses only one connection to the host microcontroller. This compares to two or three pins for I2C and... [See More]
- Supply Voltage: 1.8V; 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V
- Density: 8
- Memory Category: EEPROM
- Package Type: SOIC; DIP; ['DICE', 'WAFER', 'MSOP', 'TDFN', 'SOIC', 'SOT-23', 'PDIP', 'TO-92']
from Integrated Device Technology
The 72V36110 128K x 36 SuperSync II FIFO memory with clocked read and write controls offers flexible Bus-Matching x36/x18/x9 data flow and Asynchronous/Synchronous translation on the read or write ports ; SuperSync II FIFO ’s are appropriate for network, video, telecommunications, data... [See More]
- Supply Voltage: 3.3V
- Density: 4096
- Memory Category: FIFO
- Number of Words: 128
from Quarktwin Technology Ltd.
FLASH - NAND, DRAM - LPDDR Memory IC 32GByte (NAND), 16Gbit (LPDDR4 DRAM) eMMC 5.1 HS400 + LPDDR4X 144-FBGA (8x9.5) [See More]
- Supply Voltage: 3.3V; 1.8V, 3.3V
- Density: 256000000
- Memory Category: Flash; FLASH, RAM
- Package Type: BGA; 144-FBGA
from Datakey
Leveraging industry-standard serial EEPROM memory, Datakey offers Plug memory tokens with SPI, I2C or Microwire interfaces and capacities from 1 Kb to 256 Kb. The tokens feature: Foldable Stainless Steel Bail – The plug token's stainless steel bail is used to lock the token in place. The bail... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V; 5V; 2.7 to 5.5V
- Density: 1 to 256
- Memory Category: EEPROM
- Operating Temperature: -40 to 80
from Shenzhen Shengyu Electronics Technology Limited
IC PSRAM 8MBIT PARALLEL 48FBGA [See More]
- Supply Voltage: 3.3V; 2.7V ~ 3.3V
- Density: 8000
- Memory Category: Volatile; SRAM Chip
- Package Type: BGA
from Microchip Technology, Inc.
The Microchip Technology Inc. 24AA00/24LC00/ 24C00 (24XX00*) is a 128-bit Serial EEPROM organized as 16 x 8 with a 2-wire serial interface. Low-voltage design permits operation down to 1.8 volts for the 24AA00 version, and every version maintains a maximum standby current of only 1 µA and... [See More]
- Supply Voltage: 1.8V; 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V
- Density: 0
- Memory Category: EEPROM
- Package Type: SOIC; SSOP; DIP; ['DICE', 'Wafer', 'DFN', 'TDFN', 'TSSOP', 'SOIC', 'SOT-23', 'PDIP']
from Integrated Device Technology
The 70V3599 is a high-speed 128K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1 , permits the on-chip circuitry of each port to enter a very low standby... [See More]
- Supply Voltage: 3.3V
- Density: 4608
- Memory Category: DPRAM
- Number of Words: 128
from Quarktwin Technology Ltd.
FLASH - NAND, DRAM - LPDDR Memory IC 32GByte (NAND), 16Gbit (LPDDR4 DRAM) eMMC 5.1 HS400 + LPDDR4X 144-FBGA (8x9.5) [See More]
- Supply Voltage: 3.3V; 1.8V, 3.3V
- Density: 256000000
- Memory Category: Flash; FLASH, RAM
- Package Type: BGA; 144-FBGA
from Datakey
Leveraging industry-standard serial EEPROM memory, Datakey offers Plug memory tokens with SPI, I2C or Microwire interfaces and capacities from 1 Kb to 256 Kb. The tokens feature: Foldable Stainless Steel Bail – The plug token's stainless steel bail is used to lock the token in place. The bail... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V; 5V; 2.7 to 5.5V
- Density: 1 to 4
- Memory Category: EEPROM
- Operating Temperature: -40 to 85
from Shenzhen Shengyu Electronics Technology Limited
EMMC 5.1 (HS400) 153B 16GB [See More]
- Supply Voltage: 3.3V; 1.8V ~ 3.3V
- Density: 128000000
- Memory Category: Flash; Non-Volatile
- Package Type: BGA
from Microchip Technology, Inc.
The Microchip Technology Inc. 24AA00/24LC00/ 24C00 (24XX00*) is a 128-bit Serial EEPROM organized as 16 x 8 with a 2-wire serial interface. Low-voltage design permits operation down to 1.7 volts for the 24AA00 version, and every version maintains a maximum standby current of only 1 µA and... [See More]
- Supply Voltage: 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V
- Density: 0
- Memory Category: EEPROM
- Package Type: SOIC; SSOP; DIP; ['DICE', 'WAFER', 'DFN', 'TDFN', 'TSSOP', 'SOIC', 'SOT-23', 'PDIP']
from Integrated Device Technology
The 70V7599 is a high-speed 128K x 36 (4Mbit) synchronous Bank-Switchable Dual-Ported SRAM is organized into 64 independent 2Kx36 banks and has two independent ports with separate control, address, and I/O pins for each port, allowing each port to access any 2Kx36 memory block not already accessed... [See More]
- Supply Voltage: 3.3V
- Density: 4608
- Memory Category: DPRAM; SRAM Chip
- Number of Words: 128
from Quarktwin Technology Ltd.
PSRAM (Pseudo SRAM) Memory IC 16Mbit Parallel 70 ns 48-FBGA (6x7) [See More]
- Supply Voltage: 3.3V; 2.6V ~ 3.3V
- Density: 16000
- Memory Category: PSRAM; SRAM Chip
- Package Type: BGA; 48-VFBGA
from Shenzhen Shengyu Electronics Technology Limited
IC FLASH 128MBIT PARALLEL 56TSOP [See More]
- Supply Voltage: 3.3V; 2.7V ~ 3.3V
- Density: 128000
- Memory Category: Flash; Non-Volatile
- Access Time: 75
from Microchip Technology, Inc.
The Microchip 25AA128 is a 128 Kb Serial EEPROM utilizing the industry standard Serial Peripheral Interface (SPI) compatible serial bus. The device is organized as one block of 16,384 x 8-bit and is optimized for use in consumer electronics, industrial, medical, and automotive applications where... [See More]
- Supply Voltage: 1.8V; 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V
- Density: 128
- Memory Category: EEPROM
- Package Type: SOIC; SSOP; DIP; ['DICE', 'WAFER', 'SOIJ', 'TSSOP', 'SOIC', 'PDIP', 'DFN-S']
from Integrated Device Technology
The 70V09 is a high-speed 128K x 8 Dual-Port Static RAM designed to be used as a stand-alone 1024K-bit Dual-Port SRAM or as a combination MASTER / SLAVE Dual-Port SRAM for 16-bit-or-more word systems which results in full speed, error-free operation without the need for additional discrete logic. An... [See More]
- Supply Voltage: 3.3V
- Density: 1024
- Memory Category: DPRAM
- Number of Words: 128
from Quarktwin Technology Ltd.
PSRAM (Pseudo SRAM) Memory IC 16Mbit Parallel 70 ns 48-FPBGA (6x7) [See More]
- Supply Voltage: 3.3V; 2.6V ~ 3.3V
- Density: 16000
- Memory Category: PSRAM; SRAM Chip
- Package Type: BGA; 48-VFBGA
from Shenzhen Shengyu Electronics Technology Limited
IC FLASH 64GBIT MMC 100TBGA [See More]
- Supply Voltage: 3.3V; 2.7V ~ 3.3V
- Density: 64000000
- Memory Category: Flash; Non-Volatile
- Package Type: BGA
from Microchip Technology, Inc.
The Microchip 25LC128 is a 128 Kb Serial EEPROM utilizing the industry standard Serial Peripheral Interface (SPI) compatible serial bus. The device is organized as one block of 16,384 x 8-bit and is optimized for use in consumer electronics, industrial, medical, and automotive applications where... [See More]
- Supply Voltage: 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V
- Density: 128
- Memory Category: EEPROM
- Package Type: SOIC; SSOP; DIP; ['DICE', 'SOIJ', 'TSSOP', 'SOIC', 'PDIP', 'DFN-S']
from Integrated Device Technology
The 70V9099 is a high-speed 128K x 8 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1 , permits the on-chip circuitry of each port to enter a very low standby... [See More]
- Supply Voltage: 3.3V
- Density: 576
- Memory Category: DPRAM
- Number of Words: 32
from Quarktwin Technology Ltd.
FLASH Memory IC 16Mbit Parallel 70 ns 48-TSOP [See More]
- Supply Voltage: 3.3V; 2.65V ~ 3.3V
- Density: 16000
- Memory Category: Flash; FLASH
- Package Type: 48-TFSOP (0.724\", 18.40mm Width)
from Microchip Technology, Inc.
The Microchip Technology Inc. 24AA128 is a 16K x 8 (128 Kbit) Serial Electrically Erasable PROM (EEPROM), capable of operation across a broad voltage range (1.7V to 5.5V). It has been developed for advanced, low-power applications such as personal communications or data acquisition. This device also... [See More]
- Supply Voltage: 1.8V; 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V
- Density: 128
- Memory Category: EEPROM
- Package Type: SOIC; SSOP; DIP; ['DICE', 'WAFER', 'SOIJ', 'MSOP', 'TDFN', 'TSSOP', 'SOIC', 'PDIP', 'DFN-S']
from Integrated Device Technology
The 72V291 is a 128K x 9 SuperSync FIFO memory with clocked read and write controls. It ’s a functionally compatible version of the 72291 designed to run off a 3.3V supply for very low power consumption. The Frequency Select pin ( FS ) has been removed, thus it is no longer necessary to select... [See More]
- Supply Voltage: 3.3V
- Density: 1024
- Memory Category: FIFO
- Number of Words: 128
from Quarktwin Technology Ltd.
SRAM - Asynchronous Memory IC 2Mbit Parallel 70 ns 48-FBGA (7x7) [See More]
- Supply Voltage: 3.3V; 2.7V ~ 3.3V
- Density: 2000
- Memory Category: SRAM; SRAM Chip
- Package Type: BGA; 48-TFBGA
from Microchip Technology, Inc.
The Microchip Technology Inc. 24AA128/24LC128/ 24FC128 (24XX128*) is a 16K x 8 (128 Kbit) Serial Electrically Erasable PROM (EEPROM), capable of operation across a broad voltage range (1.7V to 5.5V). It has been developed for advanced, low-power applications such as personal communications or data... [See More]
- Supply Voltage: 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V
- Density: 128
- Memory Category: EEPROM
- Package Type: SOIC; SSOP; DIP; ['Wafer', 'DICE', 'WAFER', 'SOIJ', 'MSOP', 'TDFN', 'TSSOP', 'SOIC', 'PDIP', 'DFN-S']
from Integrated Device Technology
The 70V9199 is a high-speed 128K x 9 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1 , permits the on-chip circuitry of each port to enter a very low standby... [See More]
- Supply Voltage: 3.3V
- Density: 1152
- Memory Category: DPRAM
- Number of Words: 128
from Quarktwin Technology Ltd.
SRAM - Asynchronous Memory IC 2Mbit Parallel 70 ns 48-VFBGA (6x8) [See More]
- Supply Voltage: 3.3V; 2.7V ~ 3.3V
- Density: 2000
- Memory Category: SRAM; SRAM Chip
- Package Type: BGA; 48-VFBGA
from Microchip Technology, Inc.
The Microchip AT24C128C is a 128Kb Serial EEPROM utilizing an I2C (2-wire) serial interface. The device is organized as one block of 16K x 8 and is optimized for use in consumer, industrial, and automotive applications where reliable and dependable nonvolatile memory storage is essential. The EEPROM... [See More]
- Supply Voltage: 1.8V; 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V
- Density: 128
- Memory Category: EEPROM
- Package Type: SOIC; SSOP; ['Wafer', 'TSSOP', 'UDFN', 'SOIC', 'VFBGA', 'XDFN']
from Integrated Device Technology
The 70V26 is a high-speed 16K x 16 Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER / SLAVE Dual-Port RAM for 32-bit or wider memory system applications resulting in full-speed, error-free operation without the need for additional discrete logic. An... [See More]
- Supply Voltage: 3.3V
- Density: 256
- Memory Category: DPRAM
- Number of Words: 16
from Quarktwin Technology Ltd.
SRAM - Asynchronous Memory IC 2Mbit Parallel 70 ns 48-VFBGA (6x8) [See More]
- Supply Voltage: 3.3V; 2.7V ~ 3.3V
- Density: 2000
- Memory Category: SRAM; SRAM Chip
- Package Type: BGA; 48-VFBGA
from Microchip Technology, Inc.
The Microchip Technology Inc. 24FC128 is a 16K x 8 (128 Kbit) Serial Electrically Erasable PROM (EEPROM), capable of operation across a broad voltage range (1.7V to 5.5V). It has been developed for advanced, low-power applications such as personal communications or data acquisition. This device also... [See More]
- Supply Voltage: 1.8V; 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V
- Density: 128
- Memory Category: EEPROM
- Package Type: SOIC; SSOP; DIP; ['SOIJ', 'MSOP', 'TDFN', 'TSSOP', 'SOIC', 'PDIP', 'DFN-S']
from Integrated Device Technology
The 70V261 is a high-speed 16K x 16 Dual-Port Static RAM designed to be used as a stand-alone Dual-Port RAM or as a combination MASTER / SLAVE Dual-Port RAM for 32-bit or wider memory system applications resulting in full speed, error-free operation without the need for additional discrete logic. An... [See More]
- Supply Voltage: 3.3V
- Density: 256
- Memory Category: DPRAM
- Number of Words: 16
from Quarktwin Technology Ltd.
SRAM - Asynchronous Memory IC 2Mbit Parallel 55 ns 48-VFBGA (6x8) [See More]
- Supply Voltage: 3.3V; 2.7V ~ 3.3V
- Density: 2000
- Memory Category: SRAM; SRAM Chip
- Package Type: BGA; 48-VFBGA
from Microchip Technology, Inc.
The Microchip AT25128B is a 128 Kb Serial EEPROM utilizing the industry standard Serial Peripheral Interface (SPI) compatible serial bus. The device is organized as one block of 16,384 x 8-bit and is optimized for use in consumer electronics, industrial, medical, and automotive applications where... [See More]
- Supply Voltage: 1.8V; 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V
- Density: 128
- Memory Category: EEPROM
- Package Type: SOIC; SSOP; ['Wafer', 'TSSOP', 'UDFN', 'SOIC', 'VFBGA']
from Integrated Device Technology
The 70V9269 is a high-speed 16K x 16 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1 , permits the on-chip circuitry of each port to enter a very low standby... [See More]
- Supply Voltage: 3.3V
- Density: 256
- Memory Category: DPRAM
- Number of Words: 16
from Quarktwin Technology Ltd.
SRAM - Asynchronous Memory IC 2Mbit Parallel 55 ns 36-VFBGA (6x8) [See More]
- Supply Voltage: 3.3V; 2.7V ~ 3.3V
- Density: 2000
- Memory Category: SRAM; SRAM Chip
- Package Type: BGA; 36-VFBGA
from Microchip Technology, Inc.
The Microchip 25AA160C is a 16Kb Serial EEPROM utilizing the industry standard Serial Peripheral Interface (SPI) compatible serial bus. The device is organized as one block of 2048 x 8-bit and is optimized for use in consumer electronics, industrial, medical, and automotive applications where... [See More]
- Supply Voltage: 1.8V; 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V
- Density: 16
- Memory Category: EEPROM
- Package Type: SOIC; SSOP; DIP; ['DICE', 'WAFER', 'MSOP', 'TDFN', 'TSSOP', 'SOIC', 'PDIP']
from Integrated Device Technology
The 72V273 32K x 9/16K x 18 SuperSync II FIFO memory has flexible x9/x18 Bus-Matching on both read and write ports. The variable clock cycle counting delay associated with the latency period found on previous SuperSync devices has been eliminated. SuperSync II FIFOs are appropriate for network,... [See More]
- Supply Voltage: 3.3V
- Density: 288
- Memory Category: FIFO
- Number of Words: 16
from Quarktwin Technology Ltd.
SRAM - Asynchronous Memory IC 8Mbit Parallel 70 ns 48-FBGA (6x10) [See More]
- Supply Voltage: 3.3V; 2.7V ~ 3.3V
- Density: 8000
- Memory Category: SRAM; SRAM Chip
- Package Type: BGA; 48-TFBGA
from Microchip Technology, Inc.
The Microchip 25AA160D is a 16 Kb Serial EEPROM utilizing the industry standard Serial Peripheral Interface (SPI) compatible serial bus. The device is organized as one block of 2048 x 8-bit and is optimized for use in consumer electronics, industrial, medical, and automotive applications where... [See More]
- Supply Voltage: 1.8V; 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V
- Density: 16
- Memory Category: EEPROM
- Package Type: SOIC; SSOP; DIP; ['DICE', 'WAFER', 'Wafer', 'MSOP', 'TDFN', 'TSSOP', 'SOIC', 'PDIP']
from Integrated Device Technology
The 72V265 is an 16K x 18 SuperSync FIFO memory with clocked read and write controls. It 's a functionally compatible version of the 72265 designed to run off a 3.3V supply for very low power consumption. The Frequency Select pin ( FS ) has been removed, thus it is no longer necessary to select... [See More]
- Supply Voltage: 3.3V
- Density: 288
- Memory Category: FIFO
- Number of Words: 16
from Quarktwin Technology Ltd.
SRAM - Dual Port, Standard Memory IC 9Mbit Parallel 167 MHz 3.3 ns 484-PBGA (23x23) [See More]
- Supply Voltage: 3.3V; 1.7V ~ 1.9V, 2.4V ~ 2.6V, 2.7V ~ 3.3V
- Density: 9000
- Memory Category: SRAM; SRAM Chip
- Package Type: BGA; 484-BGA
from Microchip Technology, Inc.
The Microchip 25LC160C is a 16 Kb Serial EEPROM utilizing the industry standard Serial Peripheral Interface (SPI) compatible serial bus. The device is organized as one block of 2048 x 8-bit and is optimized for use in consumer electronics, industrial, medical, and automotive applications where... [See More]
- Supply Voltage: 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V
- Density: 16
- Memory Category: EEPROM
- Package Type: SOIC; SSOP; DIP; ['MSOP', 'TDFN', 'TSSOP', 'SOIC', 'PDIP']
from Integrated Device Technology
The 70V9369 is a high-speed 16K x 18-bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1 , permits the on-chip circuitry of each port to enter a very low standby... [See More]
- Supply Voltage: 3.3V
- Density: 288
- Memory Category: DPRAM
- Number of Words: 16
from Quarktwin Technology Ltd.
SRAM - Dual Port, MoBL Memory IC 64Kbit Parallel 55 ns 100-VFBGA (6x6) [See More]
- Supply Voltage: 3.3V; 1.7V ~ 1.9V, 2.4V ~ 2.6V, 2.7V ~ 3.3V
- Density: 64
- Memory Category: SRAM; SRAM Chip
- Package Type: BGA; 100-VFBGA
from Microchip Technology, Inc.
The Microchip 25LC160D is a 16 Kb Serial EEPROM utilizing the industry standard Serial Peripheral Interface (SPI) compatible serial bus. The device is organized as one block of 2048 x 8-bit and is optimized for use in consumer electronics, industrial, medical, and automotive applications where... [See More]
- Supply Voltage: 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V
- Density: 16
- Memory Category: EEPROM
- Package Type: SOIC; SSOP; DIP; ['MSOP', 'TDFN', 'TSSOP', 'SOIC', 'PDIP']
from Integrated Device Technology
The 72V3680 16K x 36 SuperSync II FIFO memory with clocked read and write controls offers flexible Bus-Matching x36/x18/x9 data flow and Asynchronous/Synchronous translation on the read or write ports ; SuperSync II FIFO ’s are appropriate for network, video, telecommunications, data... [See More]
- Supply Voltage: 3.3V
- Density: 512
- Memory Category: FIFO
- Number of Words: 16
from Quarktwin Technology Ltd.
SRAM - Dual Port, Asynchronous Memory IC 128Kbit Parallel 55 ns 100-VFBGA (6x6) [See More]
- Supply Voltage: 3.3V; 1.7V ~ 1.9V, 2.4V ~ 2.6V, 2.7V ~ 3.3V
- Density: 128
- Memory Category: SRAM; SRAM Chip
- Package Type: BGA; 100-VFBGA
from Microchip Technology, Inc.
The Microchip Technology Inc 47L16 EERAM is a 16Kbit SRAM with EEPROM Backup. The I2C EERAM Memory is a Low-Cost NVSRAM that Eliminates the Need for an External Battery to Retain Data. The device is organized as 2048 x 8 bits and utilizes the I2C serial interface. The 47L16 provides infinite read... [See More]
- Supply Voltage: 2.7V; 3V; 3.3V; 3.6V
- Density: 16
- Memory Category: EEPROM; SRAM Chip
- Package Type: SOIC; SSOP; DIP; ['DICE', 'WAFER', 'TSSOP', 'SOIC', 'PDIP']
from Integrated Device Technology
The 70V3569 is a high-speed 16K x 36 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1 , permits the on-chip circuitry of each port to enter a very low standby... [See More]
- Supply Voltage: 3.3V
- Density: 576
- Memory Category: DPRAM
- Number of Words: 16
from Quarktwin Technology Ltd.
PSRAM (Pseudo SRAM) Memory IC 16Mbit Parallel 70 ns 48-FBGA (6x8) [See More]
- Supply Voltage: 3.3V; 2.7V ~ 3.3V
- Density: 16000
- Memory Category: PSRAM; SRAM Chip
- Package Type: BGA; 48-TFBGA
from Microchip Technology, Inc.
The Microchip Technology Inc. 24AA16 is a 16Kb I2C ™ compatible Serial EEPROM. The device is organized as eight blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V with standby and active currents of only 1 µA and 1 mA,... [See More]
- Supply Voltage: 1.8V; 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V
- Density: 16
- Memory Category: EEPROM
- Package Type: SOIC; SSOP; DIP; ['Wafer', 'DICE', 'WAFER', 'CSP', 'MSOP', 'DFN', 'TDFN', 'TSSOP', 'SOIC', 'SOT-23', 'PDIP']
from Integrated Device Technology
The 70V06 is a high-speed 16K x 8 Dual-Port Static RAM designed to be used as a stand-alone 128K-bit Dual-Port SRAM or as a combination MASTER / SLAVE Dual-Port SRAM for 16-bit-or-more word systems which results in full speed, error-free operation without the need for additional discrete logic. An... [See More]
- Supply Voltage: 3.3V
- Density: 128
- Memory Category: DPRAM
- Number of Words: 16
from Quarktwin Technology Ltd.
FLASH - NAND (MLC) Memory IC 32Gbit eMMC 153-FBGA (9x7.5) [See More]
- Supply Voltage: 3.3V; 1.8V ~ 3.3V
- Density: 32000000
- Memory Category: Flash; FLASH
- Package Type: BGA; 153-BGA
from Microchip Technology, Inc.
The Microchip Technology Inc. 24FC16 is a 16Kb I2C ™ compatible Serial EEPROM. The device is organized as eight blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V, with standby and active currents of only 1 µA and 1 mA,... [See More]
- Supply Voltage: 1.8V; 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V
- Density: 16
- Memory Category: EEPROM
- Package Type: SOIC; SSOP; DIP; ['MSOP', 'TSSOP', 'UDFN', 'SOIC', 'SOT-23', 'PDIP']
from Integrated Device Technology
The 72V06 is a 16K x 9 dual-port FIFO that operates at Vcc between 3.0V and 3.6V. The device will load and empty data on a first-in/first-out basis. It uses Full and Empty flags to prevent data overflow and underflow. It has a Retransmit ( RT ) capability that allows for reset of the read pointer to... [See More]
- Supply Voltage: 3.3V
- Density: 144
- Memory Category: FIFO
- Number of Words: 16
from Quarktwin Technology Ltd.
FLASH - NAND (MLC) Memory IC 32Gbit eMMC 153-LFBGA (11.5x13) [See More]
- Supply Voltage: 3.3V; 1.8V ~ 3.3V
- Density: 32000000
- Memory Category: Flash; FLASH
- Package Type: BGA; 153-LFBGA
from Microchip Technology, Inc.
The Microchip Technology Inc. 24AA16/24LC16B is a 16Kb I2C ™ compatible Serial EEPROM. The device is organized as eight blocks of 256 x 8-bit memory with a 2-wire serial interface. Low-voltage design permits operation down to 1.7V with standby and active currents of only 1 µA and 1 mA,... [See More]
- Supply Voltage: 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V
- Density: 16
- Memory Category: EEPROM
- Package Type: SOIC; SSOP; DIP; ['DICE', 'WAFER', 'MSOP', 'DFN', 'TDFN', 'TSSOP', 'SOIC', 'SOT-23', 'PDIP']
from Integrated Device Technology
The 72V261 is a 16K x 9 SuperSync FIFO memory with clocked read and write controls. It ’s a functionally compatible version of the 72261 designed to run off a 3.3V supply for very low power consumption. The Frequency Select pin ( FS ) has been removed, thus it is no longer necessary to select... [See More]
- Supply Voltage: 3.3V
- Density: 144
- Memory Category: FIFO
- Number of Words: 16
from Quarktwin Technology Ltd.
FLASH - NAND (MLC) Memory IC 32Gbit eMMC 153-FBGA (11.5x13x0.8) [See More]
- Supply Voltage: 3.3V; 1.8V, 3.3V
- Density: 32000000
- Memory Category: Flash; FLASH
- Package Type: BGA; 153-FBGA
from Microchip Technology, Inc.
The Microchip AT24C16C is a 16Kb Serial EEPROM utilizing an I2C (2-wire) serial interface. The device is organized as one block of 2K x 8 and is optimized for use in consumer, industrial, and automotive applications where reliable and dependable nonvolatile memory storage is essential. The EEPROM is... [See More]
- Supply Voltage: 1.8V; 2.5V; 2.7V; 3V; 3.3V; 3.6V; 5V
- Density: 16
- Memory Category: EEPROM
- Package Type: SOIC; SSOP; DIP; ['Wafer', 'VFBGA', 'TSSOP', 'UDFN', 'SOIC', 'TSOT', 'XDFN', 'PDIP']
from Integrated Device Technology
The 70V9169 is a high-speed 16K x 9 bit synchronous Dual-Port RAM that has been optimized for applications having unidirectional or bidirectional data flow in bursts. An automatic power down feature, controlled by CE0 and CE1 , permits the on-chip circuitry of each port to enter a very low standby... [See More]
- Supply Voltage: 3.3V
- Density: 144
- Memory Category: DPRAM
- Number of Words: 16
from Quarktwin Technology Ltd.
FLASH - NAND (MLC) Memory IC 32Gbit eMMC 153-FBGA (11.5x13) [See More]
- Supply Voltage: 3.3V; 1.8V ~ 3.3V
- Density: 32000000
- Memory Category: Flash; FLASH
- Package Type: BGA; 153-BGA
from Microchip Technology, Inc.
The Microchip AT24C16D is a 16 Kb Serial EEPROM utilizing an I2C (2-wire) serial interface. The device is organized as one block of 2,048 x 8 and is optimized for use in industrial and consumer applications where reliable and dependable nonvolatile memory storage is essential. The EEPROM is... [See More]
- Supply Voltage: 1.8V; 2.5V; 2.7V; 3V; 3.3V; 3.6V
- Density: 16
- Memory Category: EEPROM
- Package Type: SOIC; SSOP; DIP; ['Wafer', 'VFBGA', 'TSSOP', 'UDFN', 'TSOT', 'SOIC', 'PDIP']
from Integrated Device Technology
The 72V51443 multi-queue flow-control device is a single chip within which between 1 and 16 discrete FIFO queues can be setup. All queues within the device have common data input bus, (write port) and a common data output bus, (read port). Data written into the write port is directed to a respective... [See More]
- Supply Voltage: 3.3V
- Density: 1024
- Memory Category: FIFO
- Number of Words: 4
from Quarktwin Technology Ltd.
FLASH - NAND (MLC) Memory IC 64Gbit eMMC 153-LFBGA (11.5x13) [See More]
- Supply Voltage: 3.3V; 1.8V ~ 3.3V
- Density: 64000000
- Memory Category: Flash; FLASH
- Package Type: BGA; 153-LFBGA