Automotive Transistors

95 Results
Automotive Power MOSFETs -- Super J MOS S2 Model: FMC60N079S2A
from Fuji Electric Corp. of America

Fuji Electric offers a high performance and easy-to-use, easy-to-design planar type Power MOSFET achieved by the 2nd generation “Quasi-Plane-Junction ” technology. It maintains both low power loss and noise, lower RDS(on) characteristics, more controllable switching dv/dt by gate... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: T-Pack(S)
  • Transistor Type: Power-MOSFET
-500V Automotive Grade PolarP™ P-Channel Power MOSFET -- IXTY2P50PA
from Littelfuse, Inc.

IXTY2P50PA is an AEC-Q101 qualified and PPAP available, -500 V, -2 A, PolarTM P-channel enhancement mode power MOSFET in TO-252 (DPAK) package. The P-channel MOSFET is manufactured using the Polar technology platform resulting in significant reduction in on-state resistance (RDS(on),max = 4.2... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Polarity: P-Channel
  • Transistor Type: MOSFET
  • Package Type: TO-252 (DPAK); TO-252
1200 V, 150 mohm SiC FET -- UF3C120150K4S
from Qorvo

Qorvo's UF3C120150K4S 1200 V, 150 mohm SiC FET products co-package its high-performance F3 SiC fast JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247 package and the best... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: TO-247-4L
  • Transistor Technology / Material: 1200 V, 150 mohm SiC FET
Automotive IGBT & CoolSiC™ MOSFET Modules -- F4-50R07W1H3_B11A
from Infineon Technologies AG

EasyPACK ™ 1B Module with fast TRENCHSTOP ™ IGBT3, Rapid 1 diode and PressFIT / NTC. Summary of Features. Automotive High Speed IGBT H3 and Rapid 1 Diode. Low Switching Losses. Low inductive design. 2.5 kV AC 1min Insulation. High Creepage and Clearance Distances. Integrated NTC... [See More]

  • Transistor Grade / Operating Range: Automotive; Welding ; Induction Heating ; Hybrid Electric Vehicles ; eMobility ; CAV ; Battery Management
  • Package Type: AG-EASY1BA-311
  • Transistor Type: MOSFET; IGBT
10 V, 3 A NPN low VCEsat transistor -- PBSS4310PAS-QX
from Nexperia B.V.

NPN low VCEsat transistor, encapsulated in an ultra thin SOT1061D (DFN2020D-3) leadless small Surface-Mounted Device (SMD) plastic package with medium power capability and side-wettable flanks (SWF). Features and benefits. Very low collector-emitter saturation voltage VCEsat. High collector current... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: DFN2020D-3 (SOT1061D)
  • Polarity: NPN
Bipolar RF Transistors -- 31-MMBTH10Q-7-FCT-ND [MMBTH10Q-7-F from DIODES Incorporated]
from DigiKey

RF Transistor NPN 25V 50mA 650MHz 310mW Surface Mount SOT-23-3 [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
  • Polarity: NPN
CSD17313Q2Q1 Automotive 30-V N-Channel NexFET? Power MOSFET -- CSD17313Q2Q1
from Texas Instruments

Automotive 30-V N-Channel NexFET? Power MOSFET 6-WSON -55 to 150 [See More]

  • Transistor Grade / Operating Range: Automotive
  • Polarity: N-Channel
  • Transistor Type: Power-MOSFET
  • Package Type: SON2x2
150V Automotive Qualified Ultra Junction X4-Class Power MOSFETs -- IXTA130N15X4A
from Littelfuse, Inc.

These IXTA130N15X4A devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: TO-263; TO-263
  • Transistor Type: MOSFET
1200 V, 150 mohm SiC FET -- UJ3C120150K3S
from Qorvo

Qorvo's UJ3C120150K3S 1200 V, 150 mohm SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: TO-247-3L
  • Transistor Technology / Material: 1200 V, 150 mohm SiC FET
Automotive IGBT & CoolSiC™ MOSFET Modules -- FF300R08W2P2_B11A
from Infineon Technologies AG

EasyPACK ™ 2B 750V, 300A half bridge automotive qualified IGBT module. The FF300R08W2P2_B11A is a very compact and flexible product for inverter applications of hybrid and electric vehicles. This 750 V, automotive power module is optimized for inverter applications of hybrid and electric... [See More]

  • Transistor Grade / Operating Range: Automotive; Hybrid Electric Vehicles ; eMobility ; Main Inverter ; Motorcycle
  • Package Type: AG-EASY2B-3
  • Transistor Type: MOSFET; IGBT
100 V N-channel Trench MOSFET -- PMT280ENEAX
from Nexperia B.V.

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Logic level compatible. Very fast switching. Trench MOSFET technology. ElectroStatic Discharge (ESD)... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Polarity: N-Channel
  • Transistor Type: MOSFET
  • Package Type: SOT223; SC-73 (SOT223)
Bipolar RF Transistors -- 568-11503-1-ND [BFU520AR from NXP Semiconductors]
from DigiKey

RF Transistor NPN 12V 30mA 10GHz 450mW Surface Mount SOT-23 (TO-236AB) [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: SOT23; TO-236-3, SC-59, SOT-23-3
  • Polarity: NPN
150V Automotive Qualified Ultra Junction X4-Class Power MOSFETs -- IXTP100N15X4A
from Littelfuse, Inc.

These IXTP100N15X4A devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: TO-220; TO-220
  • Transistor Type: MOSFET
1200 V, 410 mohm SiC FET -- UF3C120400B7S
from Qorvo

Qorvo's UF3C120400B7S (QF3CG41M) SiC FET device is based on a unique cascode circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device's standard gate-drive characteristics allows for a true "drop-in replacement" to Si... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: D2PAK-7L
  • Transistor Technology / Material: 1200 V, 410 mohm SiC FET
Automotive IGBT & CoolSiC™ MOSFET Modules -- FF400R07A01E3_S6
from Infineon Technologies AG

HybridPACKTM DSC S1 700 V, 400 A half-bridge TRENCHSTOPTM IGBT3 including matching diodes with enhanced softness is a very compact IGBT molded module targeting hybrid and electric vehicles. Summary of Features. Increased blocking Voltage capability to 700 V. Integrated current sensor. Integrated... [See More]

  • Transistor Grade / Operating Range: Automotive; eMobility ; Hybrid Electric Vehicles ; Drives ; CAV ; Aircon
  • Package Type: PG-MDIP-14
  • Transistor Type: MOSFET; IGBT
100 V, 1 A NPN low VCEsat (BISS) transistor -- PBSS8110D,115
from Nexperia B.V.

NPN low VCEsat transistor in a plastic SOT457 (SC-74) package. Features and benefits. SOT457 package. Low collector-emitter saturation voltage VCEsat. High collector current capability IC and ICM. High efficiency, leading to less heat generation. AEC-Q101 qualified. Applications. Major application... [See More]

  • Transistor Grade / Operating Range: Industrial; Automotive
  • Package Type: TSOP6 (SOT457)
  • Polarity: NPN
Bipolar RF Transistors -- 568-11504-1-ND [BFU520R from NXP Semiconductors]
from DigiKey

RF Transistor NPN 12V 30mA 10.5GHz 450mW Surface Mount SOT-143B [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: SOT143; TO-253-4, TO-253AA
  • Polarity: NPN
600V - 650V Automotive Qualified Ultra Junction X2-Class Power MOSFETs -- IXFH22N60X2A
from Littelfuse, Inc.

With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH22N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body diodes HiPerFETs of the MOSFETs display very soft recovery characteristics,... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: TO-247; TO-247
  • Transistor Type: MOSFET
1200 V, 53 mohm SiC FET -- UF4C120053B7S
from Qorvo

The UF4C120053B7S is a 1200V, 53 mohm G4 SiC FET. It is based on a unique ‘cascode ’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device ’s standard gate-drive characteristics allows use of... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: D2PAK-7L
  • Transistor Technology / Material: 1200 V, 53 mohm SiC FET
Automotive IGBT & CoolSiC™ MOSFET Modules -- FF450R08A03P2
from Infineon Technologies AG

The HybridPACKTM DSC S2 is a very compact half-bridge module targeting Hybrid- and Electric Vehicle applications. The module is based on Infineon ’s long-term experience developing IGBT power modules and implements the EDT2 IGBT generation. The innovative and small package is designed for... [See More]

  • Transistor Grade / Operating Range: Automotive; Drives ; CAV ; eMobility ; Hybrid Electric Vehicles
  • Package Type: PG-MDIP-14
  • Transistor Type: MOSFET; IGBT
100 V, 1 A NPN low VCEsat (BISS) transistor -- PBSS8110X,135
from Nexperia B.V.

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/ TO-243) SMD plastic package. PNP complement: PBSS9110X. Features and benefits. SOT89 package. Low collector-emitter saturation voltage VCEsat. High collector current capability: IC and ICM. High efficiency leading to... [See More]

  • Transistor Grade / Operating Range: Industrial; Automotive
  • Package Type: SOT89; (SOT89)
  • Polarity: NPN
Bipolar RF Transistors -- 568-11505-1-ND [BFU520WX from NXP Semiconductors]
from DigiKey

RF Transistor NPN 12V 30mA 10GHz 450mW Surface Mount SC-70 [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: SOT323; SC-70, SOT-323
  • Polarity: NPN
600V - 650V Automotive Qualified Ultra Junction X2-Class Power MOSFETs -- IXFH34N60X2A
from Littelfuse, Inc.

With on-resistance as low as 17 milliohms and current ratings ranging from 22A to 150A, these IXFH34N60X2A devices are optimized for soft-switching resonant-mode power conversion applications. The intrinsic fast body diodes HiPerFETs of the MOSFETs display very soft recovery characteristics,... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: TO-247; TO-247
  • Transistor Type: MOSFET
650 V, 27 mohm SiC FET -- UF3C065030B3
from Qorvo

Qorvo's UF3C065030B3 650 V, 27 mohm SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of... [See More]

  • Transistor Grade / Operating Range: Military; Automotive
  • Package Type: D2PAK-3L
  • Transistor Technology / Material: 650 V, 27 mohm SiC FET
Automotive IGBT & CoolSiC™ MOSFET Modules -- FS200R07A02E3_S6
from Infineon Technologies AG

HybridPACKTM DSC L 700 V, 200 A six-pack TRENCHSTOPTM IGBT3 including matching diodes with enhanced softness is a very compact IGBT molded module targeting hybrid and electric vehicles. Summary of Features. Increased blocking voltage capability to 700 V. Integrated current sensor. Low inductive... [See More]

  • Transistor Grade / Operating Range: Automotive; eMobility ; Hybrid Electric Vehicles ; Drives ; CAV ; Aircon
  • Package Type: PG-MDIP-28
  • Transistor Type: MOSFET; IGBT
100 V, 1 A NPN low VCEsat (BISS) transistor -- PBSS8110Y,115
from Nexperia B.V.

NPN low VCEsat transistor in a SOT363 (SC-88) plastic package. Features and benefits. SOT363 package. Low collector-emitter saturation voltage VCEsat. High collector current capability IC and ICM. High efficiency reduces heat generation. AEC-Q101 qualified. Applications. Major application segments:... [See More]

  • Transistor Grade / Operating Range: Industrial; Automotive
  • Package Type: TSSOP6 (SOT363)
  • Polarity: NPN
Bipolar RF Transistors -- 568-11507-1-ND [BFU520XRR from NXP Semiconductors]
from DigiKey

RF Transistor NPN 12V 30mA 10.5GHz 450mW Surface Mount SOT-143R [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: SOT143; SOT-143R
  • Polarity: NPN
800V Automotive Qualified Ultra Junction X-Class Power MOSFETs -- IXFH50N80XA
from Littelfuse, Inc.

IXFH50N80XA devices are developed using a charge compensation principle and proprietary process technology, resulting in Power MOSFETs with significantly reduced resistance RDS(on) and gate charge Qg. A low on-state resistance reduces the conduction losses; it also lowers the energy stored in the... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: TO-247; TO-247
  • Transistor Type: MOSFET
650 V, 27 mohm SiC FET -- UF3C065030T3S
from Qorvo

Qorvo's UF3C065030T3S 650 V, 27 mohm SiC FET products co-package its high-performance Gen 3 SiC JFETs with a FET optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits ultra-low gate charge, but also the best reverse recovery characteristics of... [See More]

  • Transistor Grade / Operating Range: Military; Automotive
  • Package Type: TO-220-3L
  • Transistor Technology / Material: 650 V, 27 mohm SiC FET
Automotive IGBT & CoolSiC™ MOSFET Modules -- FS200R07A1E3
from Infineon Technologies AG

HybridPACK ™ 1 is an automotive qualified power module designed for Hybrid Electric Vehicle (HEV) applications for a power range up to 20 –30kW. Summary of Features. Complete 3-phase Six-Pack with NTC in one compact module. 650V Trench-Field-Stop IGBT3 with matching emitter controlled... [See More]

  • Transistor Grade / Operating Range: Automotive; Hybrid Electric Vehicles ; eMobility ; Drives ; CAV ; Aircon
  • Package Type: AG-HP1-311
  • Transistor Type: MOSFET; IGBT
100 V, 1 A NPN low VCEsat transistor -- PBSS8110T,215
from Nexperia B.V.

NPN low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS9110T. Features and benefits. Low collector-emitter saturation voltage VCEsat. High collector current capability: IC and ICM. Applications. Major application segments. Automotive... [See More]

  • Transistor Grade / Operating Range: Industrial; Automotive
  • Package Type: SOT23; (SOT23)
  • Polarity: NPN
Bipolar RF Transistors -- 568-11508-1-ND [BFU520YX from NXP Semiconductors]
from DigiKey

RF Transistor 2 NPN (Dual) 12V 30mA 10GHz 450mW Surface Mount 6-TSSOP [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: 6-TSSOP, SC-88, SOT-363
  • Polarity: NPN
Automotive grade ultrafast low-side Power MOSFET and IGBT gate driver IC -- IX4340NE
from Littelfuse, Inc.

The IX4340NE is an automotive grade, AEC-Q100 qualified dual, high current, low side gate driver. Each of the two outputs is capable of sourcing and sinking 5A of peak current, and has a maximum voltage rating of 20V. The two outputs can be paralleled for higher current applications. Fast... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: 8-pin SOIC-EP
  • Transistor Type: IGBT
Automotive IGBT & CoolSiC™ MOSFET Modules -- FS200R07A5E3_S6
from Infineon Technologies AG

HybridPACKTM Light 700 V, 200 A six-pack TRENCHSTOPTM IGBT3 is a very compact IGBT module targeting mild hybrid vehicles. The module is based on established solder and screw interconnections known from HybridPACKTM 1. Improved stray inductance and blocking voltage offer lowest conduction and... [See More]

  • Transistor Grade / Operating Range: Automotive; eMobility ; Hybrid Electric Vehicles ; Drives ; CAV ; Aircon
  • Package Type: AG-HYBRIDL-1
  • Transistor Type: MOSFET; IGBT
100 V, 10 A NPN high power bipolar transistor -- PHPT61010NYX
from Nexperia B.V.

NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61010PY. Features and benefits. High thermal power dissipation capability. High temperature applications up to 175 °C. Reduced Printed Circuit Board (PCB) requirements... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Polarity: NPN
  • Transistor Type: Power-BJT
  • Package Type: LFPAK56; Power-SO8 (SOT669)
Bipolar RF Transistors -- NSVF3007SG3T1GOSCT-ND [NSVF3007SG3T1G from onsemi]
from DigiKey

RF Transistor NPN 12V 30mA 8GHz 350mW Surface Mount SC-70FL/MCPH3 [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: 3-SMD, Flat Lead
  • Polarity: NPN
Automotive grade ultrafast low-side Power MOSFET and IGBT gate driver IC -- IXD_604_AU
from Littelfuse, Inc.

The IXDD604SI & SIA / IXDF604SI & SIA / IXDI604SI & SIA / IXDN604SI & SIA dual high-speed gate drivers are especially well suited for driving our latest MOSFETs and IGBTs. Each of the two outputs can source and sink 4A of peak current while producing voltage rise and fall times of... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: 8-pin: SOIC, SOIC-EP
  • Transistor Type: IGBT
Automotive IGBT & CoolSiC™ MOSFET Modules -- FS380R12A6T4B
from Infineon Technologies AG

The HybridPACK ™ Drive module with IGBT4 and diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS380R12A6T4B comes with a PinFin baseplate and performance ceramic. Summary of Features. Blocking voltage 1200V. Extreme low Rth and... [See More]

  • Transistor Grade / Operating Range: Automotive; CAV ; eMobility ; Hybrid Electric Vehicles ; Drives
  • Package Type: AG-HDG1-411
  • Transistor Type: MOSFET; IGBT
100 V, 3 A NPN high power bipolar transistor -- MJD31CAJ
from Nexperia B.V.

NPN high power bipolar transistor in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. PNP complement: MJD32CA. Features and benefits. High thermal power dissipation capability. High energy efficiency due to less heat generation. Electrically similar to popular MJD31... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Polarity: NPN
  • Transistor Type: Power-BJT
  • Package Type: DPAK (SOT428C)
Bipolar RF Transistors -- NSVF4009SG4T1GOSCT-ND [NSVF4009SG4T1G from onsemi]
from DigiKey

RF Transistor NPN 3.5V 40mA 25GHz 120mW Surface Mount SC-82FL/MCPH4 [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: 4-SMD, Flat Leads
  • Polarity: NPN
Automotive IGBT & CoolSiC™ MOSFET Modules -- FS380R12A6T4LB
from Infineon Technologies AG

The HybridPACK ™ Drive module with IGBT4 and diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS380R12A6T4LB comes with a PinFin baseplate and performance ceramic. Summary of Features. Blocking voltage 1200V. Extreme low Rth and... [See More]

  • Transistor Grade / Operating Range: Automotive; CAV ; eMobility ; Hybrid Electric Vehicles ; Drives
  • Package Type: AG-HDG1-411
  • Transistor Type: MOSFET; IGBT
100 V, 3.2 mOhm Gallium Nitride (GaN) FET in a 3.5 mm x 2.13 mm Wafer Level Chip-Scale Package (WLCSP) -- GAN3R2-100CBEAZ
from Nexperia B.V.

The GAN3R2-100CBE is a a general purpose 100 V, 3.2 m Ω Gallium Nitride (GaN) FET in a 15 bump Wafer Level Chip-Scale Package (WLCSP). It is a normally-off e-mode device offering superior performance. Features and benefits. Enhancement mode - normally-off power switch. Ultra high frequency... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: WLCSP8 (WLCSP8-SOT8072)
  • Polarity: N-Channel
Bipolar RF Transistors -- NSVF5488SKT3GOSCT-ND [NSVF5488SKT3G from onsemi]
from DigiKey

RF Transistor NPN 10V 70mA 7GHz 100mW Surface Mount SOT-623/SSFP [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: SOT-623F
  • Polarity: NPN
Automotive IGBT & CoolSiC™ MOSFET Modules -- FS400R07A1E3_S7
from Infineon Technologies AG

HybridPACKTM 1 700 V, 400 A 3-phase six-pack TRENCHSTOPTM IGBT3 with emitter controlled diode is an automotive qualified power module designed for electric vehicle applications. The HybridPACKTM 1 power module is built on Infineon ’s long time experience in the development of IGBT power... [See More]

  • Transistor Grade / Operating Range: Automotive; eMobility ; Hybrid Electric Vehicles ; Drives ; CAV ; Aircon
  • Package Type: AG-HP1-311
  • Transistor Type: MOSFET; IGBT
100 V, N-channel Trench MOSFET -- BUK6D385-100EX
from Nexperia B.V.

N-channel enhancement mode Field-Effect Transistor (FET) in a medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Extended temperature range Tj = 175 °C. Side wettable flanks for optical solder inspection. [See More]

  • Transistor Grade / Operating Range: Automotive
  • Polarity: N-Channel
  • Transistor Type: MOSFET
  • Package Type: DFN2020MD‑6 (SOT1220)
Bipolar RF Transistors -- NSVF6003SB6T1GOSCT-ND [NSVF6003SB6T1G from onsemi]
from DigiKey

RF Transistor NPN 12V 150mA 7GHz 800mW Surface Mount 6-CPH [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: SOT23; SOT-23-6 Thin, TSOT-23-6
  • Polarity: NPN
Automotive IGBT & CoolSiC™ MOSFET Modules -- FS400R07A3E3
from Infineon Technologies AG

The HybridPACKTM power module is built on Infineon ’s long time experience in the development of IGBT power modules, intense research efforts of new material combinations and assembly technologies. HybridPACKTM is suitable for air or liquid cooling. The copper base plate combined with... [See More]

  • Transistor Grade / Operating Range: Automotive; eMobility ; Hybrid Electric Vehicles ; Drives ; CAV ; Aircon
  • Package Type: AG-HP1-311
  • Transistor Type: MOSFET; IGBT
15 V, 0.5 A NPN low VCEsat (BISS) transistor -- PBSS2515MB,315
from Nexperia B.V.

NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package. PNP complement: PBSS3515MB. Features and benefits. Leadless ultra small SMD plastic package. Low package height of 0.37 mm. Low collector-emitter... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: DFN1006B-3 (SOT883B)
  • Polarity: NPN
Bipolar Transistor Arrays -- 1727-1067-1-ND [PBSS4112PAN,115 from Nexperia B.V.]
from DigiKey

Bipolar (BJT) Transistor Array 2 NPN (Dual) 120V 1A 120MHz 510mW Surface Mount 6-HUSON (2x2) [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: 6-UFDFN Exposed Pad
  • Polarity: NPN
Automotive IGBT & CoolSiC™ MOSFET Modules -- FS650R08A4P2
from Infineon Technologies AG

The HybridPACK ™ DC6i is a very compact six-pack module (750V/650A) optimized for hybrid and electrical vehicles. This power module complements the benchmark EDT2 IGBT generation with Direct Cooled Base Plate with Ribbon Bonds, NTC temperature sensor and PressFIT contact technology for up to... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: AG-HDC6I-7511
  • Transistor Type: MOSFET; IGBT
150 mA LED driver in DFN2020D-6 -- NCR420PASX
from Nexperia B.V.

LED driver consisting of resistor-equipped NPN transistor with two diodes on one chip in a leadless medium power DFN2020D-6 (SOT1118D) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. Features and benefits. Stabilized output current of 10 mA without external... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: SOT1118D
  • Polarity: NPN
Bipolar Transistor Arrays -- 1727-1230-1-ND [PMP5201G,135 from Nexperia B.V.]
from DigiKey

Bipolar (BJT) Transistor Array 2 PNP (Dual) Matched Pair, Common Emitter 45V 100mA 175MHz 300mW Surface Mount 5-TSSOP [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: 5-TSSOP, SC-70-5, SOT-353
  • Polarity: PNP
Automotive IGBT & CoolSiC™ MOSFET Modules -- FS660R08A6P2FB
from Infineon Technologies AG

The HybridPACK ™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS660R08A6P2FB comes with a flat baseplate. Summary of Features. Blocking voltage 750V. Low VCEsat. Low Switching Losses. Low Qg... [See More]

  • Transistor Grade / Operating Range: Automotive; CAV ; eMobility ; Hybrid Electric Vehicles ; Drives
  • Package Type: AG-HYBRIDD-1
  • Transistor Type: MOSFET; IGBT
150 V, 500 mA NPN high-voltage low VCEsat (BISS) transistor -- PBHV8515QAZ
from Nexperia B.V.

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. PNP complement: PBHV9515QA. Features and benefits. High voltage. Low collector-emitter... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: DFN1010D-3 (SOT1215)
  • Polarity: NPN
Bipolar Transistor Arrays -- 1727-1460-1-ND [BC847QAPNZ from Nexperia B.V.]
from DigiKey

Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 350mW Surface Mount DFN1010B-6 [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: 6-XFDFN Exposed Pad
  • Polarity: NPN; PNP
Automotive IGBT & CoolSiC™ MOSFET Modules -- FS660R08A6P2FLB
from Infineon Technologies AG

The HybridPACK ™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS770R08A6P2LB comes with a flat baseplate. Summary of Features. Blocking voltage 750V. Low VCEsat. Low Switching Losses. Low Qg... [See More]

  • Transistor Grade / Operating Range: Automotive; CAV ; eMobility ; Hybrid Electric Vehicles ; Drives
  • Package Type: AG-HYBRIDD-1
  • Transistor Type: MOSFET; IGBT
150 V, 7 mOhm Gallium Nitride (GaN) FET in a 2.2 mm x 3.2 mm x 0.774 mm Land Grid Array (LGA) package -- GAN7R0-150LBEZ
from Nexperia B.V.

The GAN7R0-150LBE is a general purpose 150 V, 7 m Ω Gallium Nitride (GaN) FET in a Land Grid Array (LGA) package. It is a normally-off e-mode device offering superior performance. Features and benefits. Enhancement mode - normally-off power switch. Ultra high frequency switching capability. No... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: FCLGA3 (SOT8073-1)
  • Polarity: N-Channel
Bipolar Transistor Arrays -- 1727-1565-1-ND [BC846DS,115 from Nexperia B.V.]
from DigiKey

Bipolar (BJT) Transistor Array 2 NPN (Dual) 65V 100mA 100MHz 250mW Surface Mount 6-TSOP [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: SC-74, SOT-457
  • Polarity: NPN
Automotive IGBT & CoolSiC™ MOSFET Modules -- FS75R07W2E3_B11A
from Infineon Technologies AG

EasyPACK ™ 2B Modules with TRENCHSTOP ™ IGBT3, Emitter Controlled 3 diode and PressFIT / NTC. Summary of Features. Increased blocking voltage capability to 650V. Low Switching Losses. Low VCEsat. Trench IGBT 3. Al2O3 Substrate with Low Thermal Restistance. High Power Density. Integrated... [See More]

  • Transistor Grade / Operating Range: Automotive; Hybrid Electric Vehicles ; eMobility ; Drives ; CAV ; Aircon
  • Package Type: AG-EASY2B-3
  • Transistor Type: MOSFET; IGBT
20 V, 2 A NPN medium power transistors -- BC68-25PA-QX
from Nexperia B.V.

NPN medium power transistor in a SOT1061 (DFN2020-3) leadless very small Surface-Mounted Device (SMD) plastic package. Features and benefits. High collector current capability IC and ICM. Two current gain selections. High power dissipation capability. Exposed heatsink for excellent thermal and... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: DFN2020-3 (SOT1061)
  • Polarity: NPN
Bipolar Transistor Arrays -- 1727-1567-1-ND [BC857BV,115 from Nexperia B.V.]
from DigiKey

Bipolar (BJT) Transistor Array 2 PNP (Dual) 45V 100mA 100MHz 200mW Surface Mount SOT-666 [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: SOT-563, SOT-666
  • Polarity: PNP
Automotive IGBT & CoolSiC™ MOSFET Modules -- FS770R08A6P2B
from Infineon Technologies AG

The HybridPACK ™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS770R08A6P2B comes with a baseplate with bonded cooling structure. Summary of Features. Blocking voltage 750V. Low VCEsat. Low... [See More]

  • Transistor Grade / Operating Range: Automotive; CAV ; eMobility ; Hybrid Electric Vehicles ; Drives
  • Package Type: AG-HYBRIDD-1
  • Transistor Type: MOSFET; IGBT
30 V, 200 mA P-channel Trench MOSFET -- NX3008PBKW,115
from Nexperia B.V.

P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits. Very fast switching. Low threshold voltage. Trench MOSFET technology. ESD protection up to 2 kV. AEC-Q101 qualified. [See More]

  • Transistor Grade / Operating Range: Automotive
  • Polarity: P-Channel
  • Transistor Type: MOSFET
  • Package Type: SOT323; SC-70 (SOT323)
Bipolar Transistor Arrays -- 1727-1877-1-ND [BC847BPN,135 from Nexperia B.V.]
from DigiKey

Bipolar (BJT) Transistor Array NPN, PNP 45V 100mA 100MHz 300mW Surface Mount 6-TSSOP [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: 6-TSSOP, SC-88, SOT-363
  • Polarity: NPN; PNP
Automotive IGBT & CoolSiC™ MOSFET Modules -- FS770R08A6P2LB
from Infineon Technologies AG

The HybridPACK ™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS770R08A6P2LB comes with a baseplate with bonded cooling structure. Summary of Features. Blocking voltage 750V. Low VCEsat. Low... [See More]

  • Transistor Grade / Operating Range: Automotive; CAV ; eMobility ; Hybrid Electric Vehicles ; Drives
  • Package Type: AG-HYBRIDD-1
  • Transistor Type: MOSFET; IGBT
40 V, 0.5 A NPN low VCEsat (BISS) transistor -- PBSS2540M,315
from Nexperia B.V.

Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3540M. Features and benefits. Low collector-emitter saturation voltage VCEsat. High collector current capability IC and ICM. High efficiency leading to reduced heat generation. Reduced printed-circuit... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: DFN1006-3 (SOT883)
  • Polarity: NPN
Bipolar Transistor Arrays -- 1727-2265-1-ND [PHPT610030NKX from Nexperia B.V.]
from DigiKey

Bipolar (BJT) Transistor Array 2 NPN (Dual) 100V 3A 140MHz 1.25W Surface Mount LFPAK56D [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: SOT-1205, 8-LFPAK56
  • Polarity: NPN
Automotive IGBT & CoolSiC™ MOSFET Modules -- FS820R08A6P2
from Infineon Technologies AG

The HybridPACK ™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The direct cooled baseplate with PinFin structure in the FS820R08A6P2 product best utilizes the implemented chipset and shows superior thermal... [See More]

  • Transistor Grade / Operating Range: Automotive; CAV ; eMobility ; Hybrid Electric Vehicles ; Drives
  • Package Type: AG-HYBRIDD-1
  • Transistor Type: MOSFET; IGBT
40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET -- PBSM5240PF,115
from Nexperia B.V.

Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118 Surface-Mounted Device (SMD) plastic package. Features and benefits. Very low collector-emitter saturation voltage VCEsat. High collector... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: DFN2020-6 (SOT1118)
  • Transistor Type: MOSFET
Bipolar Transistor Arrays -- 1727-5468-1-ND [BCV63,215 from Nexperia B.V.]
from DigiKey

Bipolar (BJT) Transistor Array 2 NPN (Dual) 30V, 6V 100mA 100MHz 250mW Surface Mount SOT-143B [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: SOT143; TO-253-4, TO-253AA
  • Polarity: NPN
Automotive IGBT & CoolSiC™ MOSFET Modules -- FS820R08A6P2B
from Infineon Technologies AG

HybridPACK ™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. Find appropriate Automotive EiceDRIVER ™. Summary of Features. Blocking Voltage 750V. Low VCEsat. Low Switching Losses. Low QG and Cres. Low... [See More]

  • Transistor Grade / Operating Range: Automotive; CAV ; eMobility ; Hybrid Electric Vehicles ; Drives
  • Package Type: AG-HYBRIDD-1
  • Transistor Type: MOSFET; IGBT
45 V, 100 mA NPN general-purpose transistor -- BC846AQBZ
from Nexperia B.V.

NPN general-purpose transistor in an ultra small DFN1110D-3 (SOT8015) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Features and benefits. High power dissipation capability. Suitable for Automatic Optical Inspection (AOI) of solder joint. Smaller footprint compared... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Polarity: NPN; PNP
  • Transistor Type: BJT
  • Package Type: MO-340BA
Bipolar Transistor Arrays -- 1727-7382-1-ND [BC807RAZ from Nexperia B.V.]
from DigiKey

Bipolar (BJT) Transistor Array 2 PNP (Dual) 45V 500mA 80MHz 350mW Surface Mount DFN1412-6 [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: 6-XFDFN Exposed Pad
  • Polarity: PNP
Automotive IGBT & CoolSiC™ MOSFET Modules -- FS950R08A6P2LB
from Infineon Technologies AG

The HybridPACK ™ Drive module with EDT2 IGBT and Diode is an automotive qualified power module designed for Hybrid- and Electric Vehicle applications. The product FS950R08A6P2LB comes with a PinFin baseplate and performance ceramic. Summary of Features. Blocking voltage 750V. Low VCEsat. Low... [See More]

  • Transistor Grade / Operating Range: Automotive; Drives ; CAV ; eMobility ; Hybrid Electric Vehicles
  • Package Type: AG-HDG1-7511
  • Transistor Type: MOSFET; IGBT
45 V, 100 mA NPN general-purpose transistor -- BC847AQC-QZ
from Nexperia B.V.

NPN general-purpose transistor in an ultra small DFN1412D-3 (SOT8009) leadless Surface-Mounted Device (SMD) plastic package with side-wettable flanks. Features and benefits. High power dissipation capability. Suitable for Automatic Optical Inspection (AOI) of solder joint. Smaller footprint compared... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Polarity: NPN
  • Transistor Type: BJT
  • Package Type: DFN1412D-3 (SOT8009)
Bipolar Transistor Arrays -- 1727-BC807DSFCT-ND [BC807DSF from Nexperia B.V.]
from DigiKey

BC807DS/SOT457/SC-74 [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: SC-74, SOT-457
  • Polarity: PNP
Automotive IGBT Discretes -- AIGB15N65F5
from Infineon Technologies AG

World-class low-cost power for fast-switching applications in small SMD packages. Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP ™ 5 AUTO technology with H5/F5 optimization to enable highest... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: PG-TO263-3
  • Transistor Type: IGBT
50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET) -- PRMD16Z
from Nexperia B.V.

NPN/PNP Resistor-Equipped double Transistors (RET) in an ultra small DFN1412-6 (SOT1268) leadless Surface-Mounted Device (SMD) plastic package. Features and benefits. 100 mA output current capability. Built-in bias resistors. Simplifies circuit design. Reduces component count. Reduces pick and place... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: DFN1412-6 (SOT1268-1)
  • Polarity: Complementary
Bipolar Transistor Arrays -- 264-HN1A01FE-GRLXHFCT-ND [HN1A01FE-GR,LXHF from Toshiba Electronics (UK) Ltd]
from DigiKey

Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 80MHz 100mW Surface Mount ES6 [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: SOT-563, SOT-666
  • Polarity: PNP
Automotive IGBT Discretes -- AIGBE40N65F5
from Infineon Technologies AG

World-class low-cost power for fast-switching applications in small SMD packages. Energy efficiency is the most important aspect for electric vehicles and hybrid vehicles. Therefore, Infineon has developed the 650 V TRENCHSTOP ™ 5 AUTO technology with H5/F5 optimization to enable highest... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: PG-TO263-7
  • Transistor Type: IGBT
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212 package -- GAN039-650NBBAZ
from Nexperia B.V.

The GAN039-650NBBA is an Automotive qualified 650 V, 33 m Ω Gallium Nitride (GaN) FET in a CCPAK1212 package. It is a normally-off device that combines Nexperia ’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability... [See More]

  • Transistor Grade / Operating Range: Industrial; Automotive
  • Package Type: CCPAK1212 (SOT8000)
  • Polarity: N-Channel
Bipolar Transistor Arrays -- 264-HN1A01FU-YLXHFCT-ND [HN1A01FU-Y,LXHF from Toshiba Electronics (UK) Ltd]
from DigiKey

Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 150mA 80MHz 200mW Surface Mount US6 [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: 6-TSSOP, SC-88, SOT-363
  • Polarity: PNP
Automotive IGBT Discretes -- AIGW40N65F5
from Infineon Technologies AG

TRENCHSTOP ™ 5 AUTO IGBT technology redefines “best-in-class ” IGBT by providing unmatched performance in terms of efficiency for hard switching applications. Summary of Features. 650V blocking voltage. Max junction temperature 175 °C. Very low conduction and switching losses. [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: PG-TO247-3
  • Transistor Type: IGBT
650 V, 33 mOhm Gallium Nitride (GaN) FET in a CCPAK1212i package -- GAN039-650NTBAZ
from Nexperia B.V.

The GAN039-650NTBA is an Automotive qualified 650 V, 33 m Ω Gallium Nitride (GaN) FET in a CCPAK1212i inverted package. It is a normally-off device that combines Nexperia ’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior... [See More]

  • Transistor Grade / Operating Range: Industrial; Automotive
  • Package Type: CCPAK1212I (SOT8005)
  • Polarity: N-Channel
Bipolar Transistor Arrays -- 264-HN1B01FU-GRLXHFCT-ND [HN1B01FU-GR,LXHF from Toshiba Electronics (UK) Ltd]
from DigiKey

Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 120MHz, 150MHz 200mW Surface Mount US6 [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: 6-TSSOP, SC-88, SOT-363
  • Polarity: NPN; PNP
Automotive IGBT Discretes -- AIKB20N60CT
from Infineon Technologies AG

Infineon's Discrete IGBT TRENCHSTOP ™ and Fieldstop technology for 600V Automotive applications offers very tight parameter distribution, high ruggedness, temperature stable behavior and very high switching speed. Summary of Features. Very low V CEsat 1.5V (typ.). Maximum junction temperature... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: PG-TO263-3
  • Transistor Type: IGBT
Dual N-channel 100 V, 121 mΩ standard level MOSFET -- BUK7K134-100EX
from Nexperia B.V.

Dual Standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. Features and benefits. Dual MOSFET. Q101 Compliant. Repetitive avalanche... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Polarity: N-Channel
  • Transistor Type: MOSFET
  • Package Type: LFPAK56D; Dual LFPAK (SOT1205)
Bipolar Transistor Arrays -- 296-11809-5-ND [SN75469D from Texas Instruments High-Performance Analog]
from DigiKey

Bipolar (BJT) Transistor Array 7 NPN Darlington 100V 500mA Surface Mount 16-SOIC [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: 16-SOIC (0.154", 3.90mm Width)
  • Polarity: NPN
Automotive IGBT Discretes -- AIKQ120N60CT
from Infineon Technologies AG

Infineon's Discrete IGBT TRENCHSTOP ™ and Fieldstop technology for 600V Automotive applications offers very tight parameter distribution, high ruggedness, temperature stable behavior and very high switching speed. Summary of Features. Very low V CEsat 1.5V (typ.). Maximum junction temperature... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: PG-TO247-3
  • Transistor Type: IGBT
N-channel 100 V, 120 mΩ logic level MOSFET in LFPAK33 -- BUK9M120-100EX
from Nexperia B.V.

Logic level N-channel MOSFET in an LFPAK33 (Power33) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. Features and benefits. Q101 compliant. Repetitive avalanche rated. Suitable for thermally... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Polarity: N-Channel
  • Transistor Type: MOSFET
  • Package Type: LFPAK33 (SOT1210)
Bipolar Transistor Arrays -- 296-15777-1-ND [ULN2803ADWR from Texas Instruments High-Performance Analog]
from DigiKey

Bipolar (BJT) Transistor Array 8 NPN Darlington 50V 500mA Surface Mount 18-SOIC [See More]

  • Transistor Grade / Operating Range: Automotive
  • Package Type: 18-SOIC (0.295", 7.50mm Width)
  • Polarity: NPN
MOSFETs
from Toshiba America, Inc.

Toshiba offers an extensive portfolio of low-VDSS and mid/high-VDSS MOSFETs in various circuit configurations and packages, featuring high speed, high performance, low loss, low on-resistance, small packaging, etc. Toshiba has decades of experience in the development and manufacturing of MOSFETs. [See More]

  • Transistor Grade / Operating Range: Industrial; Automotive
  • Transistor Type: MOSFET; MOSFET RF
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 21Milliohms;ID 36A;TO-220AB;PD 92W;gFS 36V -- 70016922 [IRF540ZPBF from Infineon Technologies AG]
from Allied Electronics, Inc.

Power MOSFET, Pulsed Drain Current 92 A, Input Capacitance 1770 pF. Advanced process technology. Ultra low on-resistance. 175 °C operating temperature. Fast switching. Repetitive avalanche allowed up to Tjmax. Lead-free. Specifically designed for automotive applications, this HEXFET ® power... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Polarity: N-Channel
  • Transistor Type: MOSFET
  • Package Type: TO-220
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 4.9Milliohms;ID 110A;TO-220AB;PD 170W;-55de -- 70016921 [IRF3205ZPBF from Infineon Technologies AG]
from Allied Electronics, Inc.

Power MOSFET, Pulsed Drain Current 440 A, Input Capacitance 3450 pF. Advanced process technology. Ultra low on-resistance. 150 °C operating temperature. Fast switching. Repetitive avalanche allowed up to Tjmax. Lead-free. Specifically designed for automotive applications, this HEXFET ® power... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Polarity: N-Channel
  • Transistor Type: MOSFET
  • Package Type: TO-220
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 9.6Milliohms;ID 57A;TO-220AB;PD 92W;gFS 25S -- 70016927 [IRFZ44VZPBF from Infineon Technologies AG]
from Allied Electronics, Inc.

Power MOSFET, Pulsed Drain Current 230 A, Input Capacitance 1690 pF. Advanced process technology. Ultra low on-resistance. 175 °C operating temperature. Fast switching. Repetitive avalanche allowed up to Tjmax. Lead-free. Specifically designed for automotive applications, this HEXFET ® power... [See More]

  • Transistor Grade / Operating Range: Automotive
  • Polarity: N-Channel
  • Transistor Type: MOSFET
  • Package Type: TO-220