Detector Schottky Diodes

RF Mixer and Detector Schottky Diode [See More]

• Applications: Detector; Mixer
• Package: SOT323

• Life Cycle Stage: Obsolete
• RoHS Compliant: RoHS

This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-02EL a suitable choice for mixer and detector functions in applications which... [See More]

• Applications: Detector; Mixer
• Package: TSLP-2-19

• Life Cycle Stage: active and preferred
• V_F: 0.2500 to 0.3200

RF Mixer and Detector Schottky Diode [See More]

• Applications: Detector; Mixer
• Package: TSLP4

• Life Cycle Stage: Obsolete
• RoHS Compliant: RoHS

This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-02ELS a suitable choice for mixer and detector functions in applications which... [See More]

• Applications: Detector; Mixer
• Package: TSSLP-2-3

• Life Cycle Stage: active and preferred
• V_F: 0.2500 to 0.3200

BAT15 - RF Mixer and Detector Schottky Diode [See More]

• Applications: Detector; Mixer
• Package: PG-TSLP-2

• Life Cycle Stage: Active
• RoHS Compliant: RoHS

Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT 15 - 02 LRH a suitable choice for mixer and detector functions in... [See More]

• Applications: Detector; Mixer
• Package: TSLP-2-7

• Life Cycle Stage: active and preferred
• V_F: 0.2500 to 0.3200

RF Mixer and Detector Schottky Diode [See More]

• Applications: Detector; Mixer
• Package: PG-SOD323-2

• Life Cycle Stage: Active
• RoHS Compliant: RoHS

Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT 15 - 02 LS a suitable choice for mixer and detector functions in... [See More]

• Applications: Detector; Mixer
• Package: TSSLP-2-1

• Life Cycle Stage: active and preferred, discontinued
• V_F: 0.2500 to 0.3200

RF Mixer and Detector Schottky Diode [See More]

• Applications: Detector; Mixer
• Package: SOT23; SOT-23-3

• Life Cycle Stage: Obsolete
• RoHS Compliant: RoHS

This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-03W a suitable choice for mixer and detector functions in applications which... [See More]

• Applications: Detector; Mixer
• Package: SOD-323; SOD323

• Life Cycle Stage: active and preferred
• V_F: 0.2500 to 0.3200

RF Mixer and Detector Schottky Diode [See More]

• Applications: Detector; Mixer
• Package: PG-SOT323-3

• Life Cycle Stage: Active
• RoHS Compliant: RoHS

This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-04R a suitable choice for mixer and detector functions in applications which... [See More]

• Applications: Detector; Mixer
• Package: SOT23; SOT23

• Life Cycle Stage: active
• V_F: 0.2500

RF Mixer and Detector Schottky Diode [See More]

• Applications: Detector; Mixer
• Package: PG-SOT143-4

• Life Cycle Stage: Active
• RoHS Compliant: RoHS

This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-04W a suitable choice for mixer and detector functions in applications which... [See More]

• Applications: Detector; Mixer
• Package: SOT323; SOT323

• Life Cycle Stage: active and preferred
• V_F: 0.2500

RF Mixer and Detector Schottky Diode [See More]

• Applications: Detector; Mixer
• Package: DSN2

• Life Cycle Stage: Obsolete
• RoHS Compliant: RoHS

This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-099 a suitable choice for mixer and detector functions in applications which... [See More]

• Applications: Detector; Mixer
• Package: SOT143; SOT143-4-1

• Life Cycle Stage: active and preferred
• V_F: 0.2500 to 0.3200

RF Mixer and Detector Schottky Diode [See More]

• Applications: Detector; Mixer
• Package: SOT343

• Life Cycle Stage: Obsolete
• RoHS Compliant: RoHS

This Infineon RF Schottky diode is silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-099R a suitable choice for mixer functions in applications which frequencies are... [See More]

• Applications: Detector; Mixer
• Package: SOT143; SOT143-4-4

• Life Cycle Stage: active and preferred
• V_F: 0.2500 to 0.3200

Schottky Barrier Diode for Detector [See More]

• Applications: Detector
• Package: URP2

• Life Cycle Stage: Obsolete
• RoHS Compliant: RoHS

Silicon Schottky Diodes. Summary of Features. For mixer applications in VHF/UHF range. For high-speed switching application. Pb-free (RoHS compliant) package. Potential Applications. Wireless Communications. Satellite Receivers. Base Stations. High Speed Data Networks [See More]

• Applications: Detector; Mixer
• Package: SOT23; SOT23

• Life Cycle Stage: active and preferred
• V_F: 0.3400 to 0.6000

This Infineon RF Schottky Diode is a silicon low barrier N-type device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage and low junction capacitance make BAT24-02ELS a suitable choice for mixer and detector functions in applications with... [See More]

• Applications: Detector; Mixer
• Package: TSSLP-2-3

• Life Cycle Stage: not for new design
• V_F: 0.2500 to 0.3200

Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT24 - 02LS a suitable choice for mixer and detector functions in... [See More]

• Applications: Detector; Mixer
• Package: TSSLP-2-1

• Life Cycle Stage: not for new design
• V_F: 0.2500

Silicon Schottky Diodes. Summary of Features. Low barrier diode for detectors up to GHz frequencies. For high-speed applications. Zero bias detector diode. Pb-free (RoHS compliant) package. Potential Applications. Wireless Communications. Satellite Receivers. Base Stations. High Speed Data Networks. [See More]

• Applications: Detector; Mixer
• Package: SC79

• Life Cycle Stage: active and preferred
• V_F: 0.1900 to 0.3000

The HSCH-5310 / HSCH-531x medium barrier beam lead schottky diodes are ideally suited for mixer and detector applications from 1GHz to 26GHz. The HSCH-5314 and HSCH-5318 have guaranteed RF tested performance, while the other products are DC only tested. [See More]

• Applications: Detector; Mixer
• V_F: 0.5000

• Life Cycle Stage: Maturity
• T_j: -65 to 175

SemiGen ’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode with tightly controlled... [See More]

• Applications: Detector; Mixer; Switching

• V_F: 295

The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large signal detection, modulation, RF to DC conversion or voltage doubling. VBR=4 V, CT=0.3 pF, RD@5mA=14Ohms, Vf @ 1 mA=350 mV [See More]

• Applications: Detector
• Package: SOT23; SOT143

• Life Cycle Stage: Maturity
• V_F: 0.2500

SemiGen ’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode with tightly controlled... [See More]

• Applications: Detector; Mixer; Switching

• V_F: 295

The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large signal detection, modulation, RF to DC conversion or voltage doubling. VBR=4 V, CT=0.3 pF, RD@5mA=14Ohms, Vf @ 1 mA=350 mV [See More]

• Applications: Detector
• Package: SOT23; SOT143

• Life Cycle Stage: Maturity
• V_F: 0.2500

SemiGen ’s Silicon Schottky Diodes are designed for applications through 40Ghz. The special process technology utilizes various metal schemes to provide excellent performance of Low, Medium, and High Barrier applications. The end result is a low resistance diode with tightly controlled... [See More]

• Applications: Detector; Mixer; Switching
• V_F: 0.2500

• Package: PK 10, 19, 20, 25, 28, 32, 37, 50, 75, 100

The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large signal detection, modulation, RF to DC conversion or voltage doubling. VBR=4 V, CT=0.3 pF, RD@5mA=14Ohms, Vf @ 1 mA=350 mV [See More]

• Applications: Detector
• Package: SOT363

• Life Cycle Stage: Maturity
• V_F: 0.2500

The SemiGen SZB900 Series of Zero Bias Schottky Detector diodes are designed for use in video detectors and power monitors eliminating the need to provide external DC bias to the diode. The choice of barrier metal and processes provide a broad selection of video impedance. Features: Low Junction... [See More]

• Applications: Detector
• V_F: 0.3000

• Package: PK 10, 12, 32, 37, 50, 100

The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large signal detection, modulation, RF to DC conversion or voltage doubling. VBR=4 V, CT=0.3 pF, RD@5mA=14Ohms, Vf @ 1 mA=350 mV [See More]

• Applications: Detector
• Package: SOT363

• Life Cycle Stage: Maturity
• V_F: 0.2500

The MiniPak HMPS-282x family of Schottky diodes is the most consistent and best all-round device available, and finds applications in mixing, detecting, switching, sampling, clamping and wave shaping at frequencies up to 6 GHz. The MiniPak package offers reduced parasitics when compared to... [See More]

• Applications: Detector; Mixer; Switching; Sampling, Clamping
• Package: MiniPak Surface Mount

• Life Cycle Stage: Maturity
• V_F: 0.3400