Maturity Schottky Diodes

7 Results
Beam Lead Silicon Schottky Diodes -- HSCH-5310
from Broadcom Inc.

The HSCH-5310 / HSCH-531x medium barrier beam lead schottky diodes are ideally suited for mixer and detector applications from 1GHz to 26GHz. The HSCH-5314 and HSCH-5318 have guaranteed RF tested performance, while the other products are DC only tested. [See More]

  • Life Cycle Stage: Maturity
  • VF: 0.5000
  • Applications: Detector; Mixer
  • Tj: -65 to 175
Schottky Barrier Rectifier -- 1N5817
from PANJIT SemiConductor

Schottky Barrier Rectifiers feature a plastic package with UL Flammability Classification 94V-O utilizing flame retardant Epoxy Molding Compound and are in compliance with EU RoHS 2002/95/EC directives. They exceed environmental standards of MIL-S-19500/288 and are for use in low voltage, high... [See More]

  • Life Cycle Stage: Maturity
  • Package: DO-41
  • Applications: Rectifier
  • VF: 0.4500
High Frequency Detector Diode -- HSMS-2860
from Broadcom Inc.

The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large signal detection, modulation, RF to DC conversion or voltage doubling. VBR=4 V, CT=0.3 pF, RD@5mA=14Ohms, Vf @ 1 mA=350 mV [See More]

  • Life Cycle Stage: Maturity
  • Package: SOT23; SOT143
  • Applications: Detector
  • VF: 0.2500
High Frequency Detector Diode -- HSMS-2865
from Broadcom Inc.

The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large signal detection, modulation, RF to DC conversion or voltage doubling. VBR=4 V, CT=0.3 pF, RD@5mA=14Ohms, Vf @ 1 mA=350 mV [See More]

  • Life Cycle Stage: Maturity
  • Package: SOT23; SOT143
  • Applications: Detector
  • VF: 0.2500
High Frequency Detector Diode -- HSMS-286K
from Broadcom Inc.

The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large signal detection, modulation, RF to DC conversion or voltage doubling. VBR=4 V, CT=0.3 pF, RD@5mA=14Ohms, Vf @ 1 mA=350 mV [See More]

  • Life Cycle Stage: Maturity
  • Package: SOT363
  • Applications: Detector
  • VF: 0.2500
High Frequency Detector Diode -- HSMS-286L
from Broadcom Inc.

The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large signal detection, modulation, RF to DC conversion or voltage doubling. VBR=4 V, CT=0.3 pF, RD@5mA=14Ohms, Vf @ 1 mA=350 mV [See More]

  • Life Cycle Stage: Maturity
  • Package: SOT363
  • Applications: Detector
  • VF: 0.2500
RF/Microwave Mixer/detector Diode -- HMPS-2825
from Broadcom Inc.

The MiniPak HMPS-282x family of Schottky diodes is the most consistent and best all-round device available, and finds applications in mixing, detecting, switching, sampling, clamping and wave shaping at frequencies up to 6 GHz. The MiniPak package offers reduced parasitics when compared to... [See More]

  • Life Cycle Stage: Maturity
  • Package: MiniPak Surface Mount
  • Applications: Detector; Mixer; Switching; Sampling, Clamping
  • VF: 0.3400